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    Semiconductor memory devices including fine patterns and methods of fabricating the same
    1.
    发明授权
    Semiconductor memory devices including fine patterns and methods of fabricating the same 有权
    包括精细图案的半导体存储器件及其制造方法

    公开(公告)号：US09362303B2

    公开(公告)日：2016-06-07

    申请号：US14681505

    申请日：2015-04-08

    申请人： Jaegoo Lee ,  Youngwoo Park ,  Jaeduk Lee

    发明人： Jaegoo Lee ,  Youngwoo Park ,  Jaeduk Lee

    IPC分类号： H01L29/792 ,  H01L27/115 ,  H01L29/66 ,  H01L21/28 ,  H01L21/768 ,  H01L21/285

    CPC分类号： H01L27/11582 ,  H01L21/28282 ,  H01L21/28518 ,  H01L21/76877 ,  H01L29/66833 ,  H01L29/7926

    摘要： Semiconductor devices are provided including an active pillar protruding from a substrate; a first gate electrode and a second gate electrode adjacent to a sidewall of the active pillar and vertically overlapping with each other, the first and second gate electrodes being insulated from each other; a first intergate insulating layer covering a first surface of the first gate electrode; and a second intergate insulating layer covering a second surface, opposite the first surface, of the second gate electrode and spaced apart from the first intergate insulating layer. The first intergate insulating layer and the second intergate insulating layer define an air gap therebetween.

    摘要翻译： 提供半导体器件，其包括从基板突出的有源柱; 与所述有源柱的侧壁相邻并且彼此垂直重叠的第一栅电极和第二栅电极，所述第一栅电极和所述第二栅电极彼此绝缘; 覆盖所述第一栅电极的第一表面的第一隔间绝缘层; 以及覆盖所述第二栅电极的与所述第一表面相对的第二表面并与所述第一栅极绝缘层间隔开的第二栅极绝缘层。 第一隔间绝缘层和第二隔间绝缘层在其间形成气隙。

    Semiconductor Memory Devices Including Fine Patterns and Methods of Fabricatring the Same
    2.
    发明申请
    Semiconductor Memory Devices Including Fine Patterns and Methods of Fabricatring the Same 有权
    包括精细图案的半导体存储器件及其制造方法

    公开(公告)号：US20150294980A1

    公开(公告)日：2015-10-15

    申请号：US14681505

    申请日：2015-04-08

    申请人： Jaegoo Lee ,  Youngwoo Park ,  Jaeduk Lee

    发明人： Jaegoo Lee ,  Youngwoo Park ,  Jaeduk Lee

    IPC分类号： H01L27/115 ,  H01L29/66 ,  H01L21/285 ,  H01L21/28 ,  H01L21/768 ,  H01L29/792 ,  H01L29/423

    CPC分类号： H01L27/11582 ,  H01L21/28282 ,  H01L21/28518 ,  H01L21/76877 ,  H01L29/66833 ,  H01L29/7926

    摘要： Semiconductor devices are provided including an active pillar protruding from a substrate; a first gate electrode and a second gate electrode adjacent to a sidewall of the active pillar and vertically overlapping with each other, the first and second gate electrodes being insulated from each other; a first intergate insulating layer covering a first surface of the first gate electrode; and a second intergate insulating layer covering a second surface, opposite the first surface, of the second gate electrode and spaced apart from the first intergate insulating layer. The first intergate insulating layer and the second intergate insulating layer define an air gap therebetween.

    摘要翻译： 提供半导体器件，其包括从基板突出的有源柱; 与所述有源柱的侧壁相邻并且彼此垂直重叠的第一栅电极和第二栅电极，所述第一栅电极和所述第二栅电极彼此绝缘; 覆盖所述第一栅电极的第一表面的第一隔间绝缘层; 以及覆盖所述第二栅电极的与所述第一表面相对的第二表面并与所述第一栅极绝缘层间隔开的第二栅极绝缘层。 第一隔间绝缘层和第二隔间绝缘层在其间形成气隙。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE 审中-公开
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20160005760A1

    公开(公告)日：2016-01-07

    申请号：US14725476

    申请日：2015-05-29

    申请人： Dohyun Lee ,  Jaegoo Lee ,  Young-Jin Kwon ,  Youngwoo Park ,  Jaeduk Lee

    发明人： Dohyun Lee ,  Jaegoo Lee ,  Young-Jin Kwon ,  Youngwoo Park ,  Jaeduk Lee

    IPC分类号： H01L27/115 ,  H01L29/10 ,  H01L29/792

    CPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L29/1033 ,  H01L29/7926

    摘要： A semiconductor device includes a lower stack structure including lower gate electrodes and lower insulating layers that are alternately and repeatedly stacked on a substrate. The semiconductor device includes an upper stack structure including upper gate electrodes and upper insulating layers that are alternately and repeatedly stacked on the lower stack structure. A lower channel structure penetrates the lower stack structure. An upper channel structure penetrates and is connected to the upper stack structure. A lower vertical insulator is disposed between the lower stack structure and the lower channel structure. The lower channel structure includes a first vertical semiconductor pattern connected to the substrate, and a first connecting semiconductor pattern disposed on the first vertical semiconductor pattern. The upper channel structure includes a second vertical semiconductor pattern electrically connected to the first vertical semiconductor pattern with the first connecting semiconductor pattern disposed therebetween.

    摘要翻译： 半导体器件包括下层堆叠结构，其包括交替重复堆叠在衬底上的下栅电极和下绝缘层。 半导体器件包括上堆叠结构，其包括交替重复堆叠在下堆叠结构上的上栅电极和上绝缘层。 下部通道结构穿透下部堆叠结构。 上通道结构穿透并连接到上堆叠结构。 下部垂直绝缘体设置在下部堆叠结构和下部通道结构之间。 下通道结构包括连接到基板的第一垂直半导体图案和布置在第一垂直半导体图案上的第一连接半导体图案。 上通道结构包括电连接到第一垂直半导体图案的第二垂直半导体图案，其间设置有第一连接半导体图案。

    Semiconductor memory device
    4.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US09183893B2

    公开(公告)日：2015-11-10

    申请号：US14037547

    申请日：2013-09-26

    申请人： Kohji Kanamori ,  Youngwoo Park ,  Jintaek Park ,  Kwang Soo Seol ,  Jaeduk Lee

    发明人： Kohji Kanamori ,  Youngwoo Park ,  Jintaek Park ,  Kwang Soo Seol ,  Jaeduk Lee

    IPC分类号： G11C5/06 ,  G11C13/00 ,  H01L45/00 ,  H01L27/22 ,  H01L27/24

    CPC分类号： G11C5/06 ,  G11C5/063 ,  G11C13/0002 ,  G11C13/0023 ,  G11C2213/73 ,  H01L27/222 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147

    摘要： According to example embodiments of inventive concepts, a semiconductor memory devices includes: a plurality of memory blocks that each include a plurality of stack structures, global bit lines connected in common to the plurality of memory blocks, block selection lines configured to control electrical connect between the global bit lines and one of the plurality of memory blocks, and vertical selection lines configured to control electrical connected between the global bit lines and one of the plurality of stack structures. Each of the plurality of stack structures includes a plurality of local bit lines, first vertical word lines and second vertical word lines crossing first sidewalls and second sidewalls respectfully of the plurality of stack structures, first variable resistive elements between the plurality of stack structures and the first vertical word lines, and second variable resistive elements between the plurality of stack structures and the second vertical word lines.

    摘要翻译： 根据本发明构思的示例性实施例，半导体存储器件包括：多个存储器块，每个存储块包括多个堆叠结构，共同连接到多个存储器块的全局位线，被配置为控制 全局位线和多个存储器块中的一个以及垂直选择线，其被配置为控制连接在全局位线和多个堆叠结构中的一个之间的电连接。 多个堆叠结构中的每一个包括多个局部位线，第一垂直字线和第二垂直字线，其横向于多个堆叠结构的第一侧壁和第二侧壁相交，多个堆叠结构之间的第一可变电阻元件和 第一垂直字线和第二可变电阻元件在多个堆叠结构和第二垂直字线之间。

    SEMICONDUCTOR DEVICES INCLUDING WORD LINE INTERCONNECTING STRUCTURES
    5.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING WORD LINE INTERCONNECTING STRUCTURES 有权
    包括字线互连结构的半导体器件

    公开(公告)号：US20140306279A1

    公开(公告)日：2014-10-16

    申请号：US14191542

    申请日：2014-02-27

    申请人： Jintaek Park ,  Youngwoo Park ,  Jaeduk Lee

    发明人： Jintaek Park ,  Youngwoo Park ,  Jaeduk Lee

    IPC分类号： H01L23/00 ,  H01L27/115

    CPC分类号： H01L27/11556 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

    摘要： A semiconductor memory device includes a substrate including a cell region and an interconnection region, adjacent first and second rows of vertical channels extending vertically from the substrate in the cell region, and layers of word lines stacked on the substrate. Each layer includes a first word line through which the first row of vertical channels passes and a second word line through which the second row of vertical channels passes, and the word lines include respective word line pads extending into the interconnection region. An isolation pattern separates the first and second word lines in the cell region and the interconnection region. First and second pluralities of contact plugs are disposed on opposite sides of the isolation pattern in the interconnection region and contact the word line pads.

    摘要翻译： 半导体存储器件包括：衬底，其包括单元区域和互连区域;相邻的从单元区域中的衬底垂直延伸的第一和第二排垂直沟道以及堆叠在衬底上的字线层。 每层包括第一行垂直通道通过的第一字线和第二行垂直通道通过的第二字线，并且字线包括延伸到互连区域中的相应字线焊盘。 隔离图案分离单元区域和互连区域中的第一和第二字线。 第一和第二多个接触插塞设置在互连区域中的隔离图案的相对侧上，并与字线焊盘接触。

    Three-dimensional semiconductor devices with current path selection structure
    8.
    发明授权
    Three-dimensional semiconductor devices with current path selection structure 有权
    具有电流路径选择结构的三维半导体器件

    公开(公告)号：US09299707B2

    公开(公告)日：2016-03-29

    申请号：US14150452

    申请日：2014-01-08

    申请人： Jaeduk Lee ,  Youngwoo Park ,  Jintaek Park ,  Dohyun Lee ,  Kohji Kanamori

    发明人： Jaeduk Lee ,  Youngwoo Park ,  Jintaek Park ,  Dohyun Lee ,  Kohji Kanamori

    IPC分类号： H01L27/108 ,  H01L27/105 ,  H01L27/115 ,  G11C16/10 ,  G11C16/14

    CPC分类号： H01L27/1052 ,  G11C16/10 ,  G11C16/14 ,  H01L27/11524 ,  H01L27/11556

    摘要： Provided are three-dimensional semiconductor devices and methods of operating the same. The three-dimensional semiconductor devices may include active patterns arranged on a substrate to have a multi-layered and multi-column structure and drain patterns connected to respective columns of the active patterns. The methods may include a layer-selection step connecting a selected one of layers of the active patterns selectively to the drain patterns. For example, the layer-selection step may be performed in such a way that widths of depletion regions to be formed in end-portions of the active patterns are differently controlled depending on to a height from the substrate.

    摘要翻译： 提供三维半导体器件及其操作方法。 三维半导体器件可以包括布置在衬底上的有源图案，以具有连接到有源图案的相应列的多层和多列结构以及漏极图案。 所述方法可以包括选择性地将有源图案的层中所选择的一个层连接到漏极图案的层选择步骤。 例如，层选择步骤可以以这样的方式执行，使得在有源图案的端部中形成的耗尽区的宽度根据与基板的高度不同地被控制。

    Semiconductor memory devices having closely spaced bit lines
    10.
    发明授权
    Semiconductor memory devices having closely spaced bit lines 有权

    公开(公告)号：US10056404B2

    公开(公告)日：2018-08-21

    申请号：US14989955

    申请日：2016-01-07

    申请人： Jaeduk Lee ,  Youngwoo Park

    发明人： Jaeduk Lee ,  Youngwoo Park

    IPC分类号： H01L29/792 ,  H01L27/11582 ,  H01L27/11573 ,  H01L27/06

    CPC分类号： H01L27/11582 ,  H01L27/0688 ,  H01L27/11573

    摘要： The inventive concepts relate to a semiconductor memory device. The semiconductor memory device includes a substrate including a circuit region and first and second connection regions respectively disposed at both sides of the circuit region opposite to each other, a logic structure including a logic circuit disposed on the circuit region and a lower insulating layer covering the logic circuit, and a memory structure on the logic structure. The logic circuit includes a first page buffer disposed adjacently to the first connection region and a second page buffer disposed adjacently to the second connection region. The memory structure includes bit lines extending onto at least one of the first and second connection regions.