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1.发明授权Method and apparatus of sealing wafer backside for full-face electrochemical plating 有权用于全面电化学电镀的晶片背面密封方法和装置公开(公告)号：US06939206B2
公开(公告)日：2005-09-06
申请号：US10159295
申请日：2002-05-31
IPC分类号： B24B37/30 , C25D7/12 , C25D17/00 , C25D17/06 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/683 , B24B1/00
CPC分类号： H01L21/67126 , B24B37/30 , C25D7/123 , C25D17/001 , C25D17/004 , C25D17/06 , H01L21/6704 , H01L21/6715 , H01L21/6838
摘要： The present invention provides a wafer carrier that includes a plurality of concentric sealing members that provide a seal, with the outer seal independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier, and a plurality of vacuum openings that a re disposed only adjacent to an inner side of the inner seal at a location corresponding to the backside periphery of the wafer.
摘要翻译： 本发明提供了一种晶片载体，其包括提供密封的多个同心密封构件，其中外部密封独立地可移动以允许在晶片仍然附接到晶片载体的同时清洁晶片的外围背面，以及 多个真空开口，其在与所述晶片的所述背面周边相对应的位置处重新设置成与所述内部密封件的内侧相邻。
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2.发明申请公开(公告)号：US20110239450A1
公开(公告)日：2011-10-06
申请号：US12906988
申请日：2010-10-18
申请人： Bulent M. Basol , Jalal Ashjaee , Douglas Young , Homayoun Talieh
发明人： Bulent M. Basol , Jalal Ashjaee , Douglas Young , Homayoun Talieh
IPC分类号： H01L31/18
CPC分类号： H01L31/0504 , B32B37/1018 , B32B37/22 , B32B2457/12 , H01L31/02 , H01L31/048 , H01L31/05 , Y02E10/50 , Y10T29/5313 , Y10T29/5317 , Y10T29/53261 , Y10T29/534 , Y10T29/53526
摘要： Described in one embodiment is a system that has a multiple number of different stations for forming solar cell modules. Described in another embodiment is a system that includes a cutting station, a setting station, and an interconnection station to create different series-connected flexible solar cell modules. Described in still another embodiment is a monolithically integrated multi-module power supply.
摘要翻译： 在一个实施例中描述的是具有用于形成太阳能电池模块的多个不同站的系统。 在另一实施例中描述的是包括切割站，设置站和互连站以创建不同串联的柔性太阳能电池模块的系统。 在又一实施例中描述的是单片集成多模块电源。
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3.发明授权Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing 有权用于全面电镀或电解抛光的与晶片表面电接触的方法和装置公开(公告)号：US06482307B2
公开(公告)日：2002-11-19
申请号：US09735546
申请日：2000-12-14
IPC分类号： C25D518
CPC分类号： C25D17/001 , C25D7/123 , C25D17/005 , C25F7/00 , H01L21/2885
摘要： Deposition of conductive material on or removal of conductive material from a wafer frontal side of a semiconductor wafer is performed by providing an anode having an anode area which is to face the wafer frontal side, and electrically connecting the wafer frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the wafer frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the wafer is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the wafer frontal side surface, in its entirety, is thus permitted.
摘要翻译： 通过提供具有面向晶片正面的阳极区域的阳极和将晶片正面与至少一个电气电连接来进行导电材料沉积在半导体晶片的晶片正面上或从晶片正面去除导电材料 通过将电接触和晶片正面推动到彼此靠近来接触阳极区域外部。 在阳极和电接触之间施加电势，并且晶片相对于阳极和电触点移动。 因此允许在整个晶片正面侧面上进行全面电镀或电解抛光。
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公开(公告)号：US07059944B2
公开(公告)日：2006-06-13
申请号：US10369118
申请日：2003-02-18
申请人： Jalal Ashjaee , Boris Govzman , Bernard M. Frey , Boguslaw A. Nagorski , Douglas W. Young , Bulent M. Basol , Homayoun Talieh
发明人： Jalal Ashjaee , Boris Govzman , Bernard M. Frey , Boguslaw A. Nagorski , Douglas W. Young , Bulent M. Basol , Homayoun Talieh
IPC分类号： B24B1/00
CPC分类号： H01L21/67745 , B24B37/345 , G05B19/41865 , G05B2219/32272 , G05B2219/45031 , H01L21/67028 , H01L21/67034 , H01L21/67046 , H01L21/67051 , H01L21/67173 , H01L21/67219 , H01L21/68707 , H01L21/68728 , Y02P90/20
摘要： An integrated process tool for chemical mechanical processing, cleaning and drying a semiconductor workpiece is provided. The integrated process tool includes a CMP module and a cleaning and drying module. After being processed, the workpiece is transported from the CMP module to the cleaning and drying module using a movable housing. In the cleaning and drying module, a cleaning mechanism is used to clean the workpiece while the workpiece is rotated and held by a support stucture of the movable housing. A drying mechanism of the cleaning and drying module picks up the workpiece from the moveable housing and spin dries it. Throughout the CMP process, cleaning and drying, the processed surface of the wafer faces down.
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5.发明授权Apparatus for processing surface of workpiece with small electrodes and surface contacts 有权用于用小电极和表面接触处理工件表面的装置公开(公告)号：US07476304B2
公开(公告)日：2009-01-13
申请号：US10947628
申请日：2004-09-21
CPC分类号： C25F7/00 , C25D7/123 , C25D17/001 , H01L21/2885
摘要： Deposition of conductive material on or removal of conductive material from a workpiece frontal side of a semiconductor workpiece is performed by providing an anode having an anode area which is to face the workpiece frontal side, and electrically connecting the workpiece frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the workpiece frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the workpiece is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the workpiece frontal side surface, in its entirety, is thus permitted.
摘要翻译： 通过提供具有正面与工件正面的阳极区域并将工件正面与至少一个电气电连接的阳极进行导电材料沉积在导电材料上或从半导体工件的工件正面去除导电材料 通过将电触点和工件正面推入彼此靠近，在阳极区域外部接触。 在阳极和电接触之间施加电位，并且工件相对于阳极和电触点移动。 因此允许在工件正面侧面上进行全面电镀或电解抛光。
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公开(公告)号：US07427337B2
公开(公告)日：2008-09-23
申请号：US10822424
申请日：2004-04-12
CPC分类号： B24B37/046 , B24B37/20 , C25F7/00 , H01L21/2885 , H01L21/32115 , H01L21/32125 , H01L21/67075 , H01L21/6715
摘要： An apparatus for electropolishing a conductive layer on a wafer using a solution is disclosed. The apparatus comprises an electrode assembly immersed in the solution configured proximate to the conductive layer having a longitudinal dimension extending to at least a periphery of the wafer, the electrode assembly including an elongated contact electrode configured to receive a potential difference, an isolator adjacent the elongated contact electrode, and an elongated process electrode adjacent the isolator configured to receive the potential difference, a voltage supply is configured to supply the potential difference between the contact electrode and the process electrode to electropolish the conductive layer on the wafer.
摘要翻译： 公开了一种使用溶液对晶片上的导电层进行电解抛光的装置。 该装置包括浸入在靠近导电层配置的溶液中的电极组件，其具有延伸至晶片的至少周边的纵向尺寸，电极组件包括构造成接收电位差的细长接触电极，邻近细长的隔离器 接触电极和邻近隔离器的细长工艺电极，其被配置为接收电位差，电压源被配置为提供接触电极和处理电极之间的电位差以对晶片上的导电层进行电解抛光。
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公开(公告)号：US07122473B2
公开(公告)日：2006-10-17
申请号：US10920028
申请日：2004-08-16
IPC分类号： H01L21/445
CPC分类号： H01L21/6708 , H01L21/2885 , H01L21/32134
摘要： The present invention provides at least one nozzle that sprays a rotating workpiece with an etchant at an edge thereof. The at least one nozzle is located in an upper chamber of a vertically configured processing subsystem that also includes mechanisms for plating, cleaning and drying in upper and lower chambers.
摘要翻译： 本发明提供了至少一个喷嘴，其在其边缘处用蚀刻剂喷射旋转的工件。 至少一个喷嘴位于垂直配置的处理子系统的上部室中，其还包括用于上部和下部室中的电镀，清洁和干燥的机构。
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公开(公告)号：US06852208B2
公开(公告)日：2005-02-08
申请号：US10265460
申请日：2002-10-03
CPC分类号： C25F7/00 , C25D7/123 , C25D17/001 , H01L21/2885
摘要： Deposition of conductive material on or removal of conductive material from a workpiece frontal side of a semiconductor workpiece is performed by providing an anode having an anode area which is to face the workpiece frontal side, and electrically connecting the workpiece frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the workpiece frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the workpiece is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the workpiece frontal side surface, in its entirety, is thus permitted.
摘要翻译： 通过提供具有正面与工件正面的阳极区域并将工件正面与至少一个电气电连接的阳极进行导电材料沉积在导电材料上或从半导体工件的工件正面去除导电材料 通过将电触点和工件正面推入彼此靠近，在阳极区域外部接触。 在阳极和电接触之间施加电位，并且工件相对于阳极和电触点移动。 因此允许在工件正面侧面上进行全面电镀或电解抛光。
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公开(公告)号：US06777338B2
公开(公告)日：2004-08-17
申请号：US10051755
申请日：2002-01-15
IPC分类号： H01L21461
CPC分类号： H01L21/6708 , H01L21/2885 , H01L21/32134
摘要： The present invention provides at least one nozzle that sprays a rotating workpiece with an etchant at an edge thereof. The at least one nozzle is located in an upper chamber of a vertically configured processing subsystem that also includes mechanisms for plating, cleaning and drying in upper and lower chambers.
摘要翻译： 本发明提供了至少一个喷嘴，其在其边缘处用蚀刻剂喷射旋转的工件。 至少一个喷嘴位于垂直配置的处理子系统的上部室中，其还包括用于上部和下部室中的电镀，清洁和干燥的机构。
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10.发明授权Constant low force wafer carrier for electrochemical mechanical processing and chemical mechanical polishing 失效用于电化学机械加工和化学机械抛光的恒定低力晶片载体公开(公告)号：US07316602B2
公开(公告)日：2008-01-08
申请号：US10654542
申请日：2003-09-02
IPC分类号： B24B1/00
CPC分类号： C25D17/002 , B23H5/08 , C25D7/123 , C25D17/001
摘要： A carrier head for holding a workpiece during processing of a workpiece surface is provided. The carrier head includes a carrier housing, a base and a pressure member. The base is configured to hold the workpiece and is movable with respect to the carrier housing. The pressure member is between the base and the carrier housing and is configured to induce the base to apply a predetermined force onto the process surface.
摘要翻译： 提供了用于在工件表面的加工期间保持工件的承载头。 载体头部包括载体壳体，基底和压力构件。 基座构造成保持工件并且可相对于托架壳体移动。 压力构件位于基座和托架壳体之间，并且构造成引导基座将预定的力施加到过程表面上。
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