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19 条记录 (耗时 0.019 秒)

    Method for preparing surfactant-templated, mesoporous low dielectric film
    3.
    发明申请
    Method for preparing surfactant-templated, mesoporous low dielectric film 审中-公开
    制备表面活性剂模板的介孔低介电膜的方法

    公开(公告)号：US20060046079A1

    公开(公告)日：2006-03-02

    申请号：US11216077

    申请日：2005-09-01

    申请人： Jin Lee ,  Hyeon Shin ,  Hyun Jeong

    发明人： Jin Lee ,  Hyeon Shin ,  Hyun Jeong

    IPC分类号： B32B5/18 ,  B05D3/02 ,  C08L83/04

    CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10T428/31663

    摘要： A method for preparing a surfactant-templated, mesoporous low dielectric film by mixing a siloxane-based polymer or oligomer, a surfactant and an organic solvent to prepare a coating solution, coating a substrate with the coating solution, and heat-curing the coated substrate. By the method, a thin film having a low dielectric constant and showing superior mechanical properties, such as hardness and modulus, can be prepared. Therefore, the low dielectric thin film can be applied to conductive materials, display materials, chemical sensors, biocatalysts, insulators, and packaging materials.

    摘要翻译： 一种通过混合硅氧烷类聚合物或低聚物，表面活性剂和有机溶剂来制备表面活性剂模板化介孔低介电性膜以制备涂布溶液，用涂布溶液涂布基材并热固化涂布基材的方法 。 通过该方法，可以制备具有低介电常数并显示出优异的机械性能如硬度和模量的薄膜。 因此，低电介质薄膜可用于导电材料，显示材料，化学传感器，生物催化剂，绝缘体和包装材料。

    Siloxane-based polymer and method for forming dielectric film using the polymer
    5.
    发明申请
    Siloxane-based polymer and method for forming dielectric film using the polymer 审中-公开
    基于硅氧烷的聚合物和使用聚合物形成介电膜的方法

    公开(公告)号：US20060134441A1

    公开(公告)日：2006-06-22

    申请号：US11304628

    申请日：2005-12-16

    申请人： Sang Mah ,  Hyeon Shin ,  Hyun Jeong

    发明人： Sang Mah ,  Hyeon Shin ,  Hyun Jeong

    IPC分类号： B32B9/04 ,  B05D3/02 ,  C08G77/04

    CPC分类号： C08G77/06 ,  C08G77/50 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

    摘要： A siloxane-based polymer having superior mechanical properties and low dielectric properties and a method for forming a dielectric film using the polymer. The siloxane-based polymer not only has superior mechanical properties, but also exhibits low hygroscopicity and good compatibility with pore-forming materials, which leads to a low dielectric constant. In addition, since the siloxane-based polymer is highly compatible with pore-forming materials and has improved applicability to semiconductor processes, it may be advantageously used as a material for dielectric films of semiconductor devices.

    摘要翻译： 具有优异的机械性能和低介电性能的硅氧烷基聚合物和使用该聚合物形成电介质膜的方法。 硅氧烷类聚合物不仅具有优异的机械性能，而且具有低吸湿性和与成孔材料的良好相容性，导致低的介电常数。 此外，由于硅氧烷基聚合物与成孔材料高度相容，并且具有改进的对半导体工艺的适用性，因此可以有利地用作半导体器件的介电膜的材料。

    Chalcogenide precursor compound and method for preparing chalcogenide thin film using the same
    6.
    发明申请
    Chalcogenide precursor compound and method for preparing chalcogenide thin film using the same 审中-公开
    硫族化物前体化合物和使用其制备硫属化物薄膜的方法

    公开(公告)号：US20070166645A1

    公开(公告)日：2007-07-19

    申请号：US11412028

    申请日：2006-04-26

    申请人： Hyun Jeong ,  Jong Seon ,  Hyeon Shin ,  Sang Hyun

    发明人： Hyun Jeong ,  Jong Seon ,  Hyeon Shin ,  Sang Hyun

    IPC分类号： G11B7/24

    CPC分类号： C23C26/02 ,  C07F3/003 ,  C23C2/04

    摘要： Disclosed herein are a soluble chalcogenide precursor compound and a method for preparing a chalcogenide thin film using the precursor compound by a solution deposition process, e.g., spin coating or dip coating. In the method, the use of the chalcogenide precursor as an inorganic semiconductor material soluble in organic solvents enables the preparation of a semiconductor thin film having excellent electrical and physical properties (e.g., crystallinity). In addition, a large-area thin film can be prepared by a solution deposition process, thus contributing to the simplification of procedures and reduction of preparation costs. Therefore, the method can be effectively applied in a wide variety of fields, such as thin film transistors, electroluminescent devices, photovoltaic cells and memory devices.

    摘要翻译： 本文公开了一种可溶性硫族化物前体化合物和使用前体化合物通过溶液沉积方法如旋涂或浸涂制备硫族化物薄膜的方法。 在该方法中，作为可溶于有机溶剂的无机半导体材料的硫族化物前体的使用使得能够制备具有优异的电学和物理性质（例如结晶度）的半导体薄膜。 此外，可以通过溶液沉积工艺制备大面积薄膜，从而有助于简化程序和降低制备成本。 因此，该方法可以有效地应用于薄膜晶体管，电致发光器件，光伏电池和存储器件等各种领域。

    Method of preparing mesoporous thin film having low dielectric constant
    9.
    发明申请
    Method of preparing mesoporous thin film having low dielectric constant 审中-公开
    制备介电常数薄介孔薄膜的方法

    公开(公告)号：US20060110940A1

    公开(公告)日：2006-05-25

    申请号：US11283926

    申请日：2005-11-22

    申请人： Jong Seon ,  Hyeon Shin ,  Hyun Jeong ,  Ji Kim

    发明人： Jong Seon ,  Hyeon Shin ,  Hyun Jeong ,  Ji Kim

    IPC分类号： H01L21/469

    CPC分类号： C09D183/04 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695

    摘要： A method of preparing a mesoporous thin film having a low dielectric constant, which includes mixing a cyclic siloxane-based monomer, an organic solvent, an acid catalyst or a base catalyst, and water, to prepare a coating solution, which is then applied on a substrate and heat cured. The mesoporous thin film of the current invention may exhibit excellent physical properties including hardness and elastic modulus, and may have a low dielectric constant of 2.5 or less, and thus, may be used to manufacture semiconductors.

    摘要翻译： 一种制备具有低介电常数的中孔薄膜的方法，其包括将环状硅氧烷类单体，有机溶剂，酸催化剂或碱催化剂与水混合，制备涂布溶液，然后将其涂布在 底物并加热固化。 本发明的介孔薄膜可以表现出优异的物理性能，包括硬度和弹性模量，并且可以具有2.5或更低的低介电常数，因此可用于制造半导体。

    Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer
    10.
    发明申请
    Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer 有权
    多官能直链硅氧烷化合物，由该化合物制备的硅氧烷聚合物，以及通过使用聚合物形成电介质膜的方法

    公开(公告)号：US20050131190A1

    公开(公告)日：2005-06-16

    申请号：US10868222

    申请日：2004-06-16

    申请人： Jae Lee ,  Jong Seon ,  Hyun Jeong ,  Jin Yim ,  Hyeon Shin

    发明人： Jae Lee ,  Jong Seon ,  Hyun Jeong ,  Jin Yim ,  Hyeon Shin

    IPC分类号： C07B61/00 ,  C07F7/08 ,  C07F7/18 ,  C07F7/21 ,  C08G77/04 ,  C08G77/50 ,  C08G77/60 ,  G03F7/075 ,  H01L21/312

    CPC分类号： C08G77/50 ,  C07F7/0838 ,  C07F7/1804

    摘要： A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant. Furthermore, the siloxane polymer retains a relatively low carbon content but a high SiO2 content, resulting in its improved applicability to semiconductor devices. Therefore, the siloxane polymer is advantageously used as a material for dielectric films of semiconductor devices.

    摘要翻译： 新型多功能直链硅氧烷化合物，由硅氧烷化合物制备的硅氧烷聚合物，以及通过使用硅氧烷聚合物形成电介质膜的方法。 线性硅氧烷聚合物具有增强的机械性能（例如模量），优异的热稳定性，低碳含量和低吸湿性，并且通过直链硅氧烷化合物的均聚或线性硅氧烷化合物与另一单体的共聚制备。 可以通过热固化含有高反应性的硅氧烷聚合物的涂布溶液来制造电介质膜。 由硅氧烷化合物制备的硅氧烷聚合物不仅具有令人满意的机械性能，热稳定性和抗裂性，而且具有低吸湿性和与成孔材料的优异相容性，导致低的介电常数。 此外，硅氧烷聚合物保持相对低的碳含量，但具有高的SiO 2含量，从而改善了对半导体器件的适用性。 因此，硅氧烷聚合物有利地用作半导体器件的介电膜的材料。