Microstructure control of Al-Cu films for improved electromigration
resistance
    8.
    发明授权
    Microstructure control of Al-Cu films for improved electromigration resistance 失效
    Al-Cu膜的微结构控制,提高了电迁移率

    公开(公告)号:US5300307A

    公开(公告)日:1994-04-05

    申请号:US944865

    申请日:1992-09-14

    摘要: A process for the forming of Al-Cu conductive thin films with reduced electromigration failures is useful, for example, in the metallization of integrated circuits. An improved formation process includes the heat treatment or annealing of the thin film conductor at a temperature within the range of from 200.degree. C. to 300.degree. C. for a time period between 10 minutes and 24 hours under a reducing atmosphere such as 15% H.sub.2 in N.sub.2 by volume. Al-Cu thin films annealed in the single phase region of a phase diagram, to temperatures between 200.degree. C. and 300.degree. C. have .theta.-phase Al.sub.2 Cu precipitates at the grain boundaries continuously become enriched in copper, due, it is theorized, to the formation of a thin coating of .theta.-phase precipitate at the grain boundary. Electromigration behavior of the aluminum is, thus, improved because the .theta.-phase precipitates with copper hinder aluminum diffusion along the grain boundaries. Electromigration, then, occurs mainly within the aluminum grains, a much slower process.

    摘要翻译: 用于形成具有降低的电迁移故障的Al-Cu导电薄膜的方法在例如集成电路的金属化中是有用的。 改进的形成方法包括在200℃至300℃的温度范围内的薄膜导体的热处理或退火在10分钟至24小时之间的时间内在还原气氛下进行,例如15% H2在N2中的体积。 在相图的单相区域退火的Al-Cu薄膜在200摄氏度到300摄氏度之间的温度下,在晶界处具有(θ)相Al2Cu沉淀物连续地富集铜,因为它是 理论上,在晶界处形成(θ)相沉淀物的薄涂层。 因此,铝的电迁移行为被改善,因为(θ)相在铜上沉淀阻碍了沿着晶界的铝扩散。 那么电迁移主要发生在铝粒内,这是一个很慢的过程。

    Electronic component and method of manufacture
    10.
    发明授权
    Electronic component and method of manufacture 有权
    电子元件及制造方法

    公开(公告)号:US06630725B1

    公开(公告)日:2003-10-07

    申请号:US09684576

    申请日:2000-10-06

    IPC分类号: H01L23552

    摘要: An electronic component includes a substrate (210, 1510), a device (221, 222) supported by the substrate and including a first bond pad (223, 224, 225, 226), and a cap (231, 232, 631, 731, 732, 1531, 1532) overlying the substrate. The cap includes a second bond pad (241, 242, 243, 244) at an outside surface of the cap, a third bond pad (245, 246, 247, 248) at an inside surface of the cap and electrically coupled to the first bond pad, and an electrically conductive via (251, 252, 254, 751, 752, 753, 754) extending through the cap and electrically coupling together the second and third bond pads.

    摘要翻译: 电子部件包括基板(210,1510),由基板支撑并包括第一接合焊盘(223,224,225,226)的盖子(231,232,631,731) ,732,1531,1532)。 所述盖包括在所述盖的外表面处的第二接合焊盘(241,242,243,244),在所述盖的内表面处的第三接合焊盘(245,246,247,248),并且电耦合到所述第一接合焊盘 接合焊盘和延伸穿过盖并电连接在一起的第二和第三接合焊盘的导电通孔(251,252,254,751,752,753,754)。