利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.028 秒)

    Methods of forming phase-changeable memory devices using growth-enhancing and growth-inhibiting layers for phase-changeable materials
    1.
    发明授权
    Methods of forming phase-changeable memory devices using growth-enhancing and growth-inhibiting layers for phase-changeable materials 失效
    使用用于相变材料的生长增强和生长抑制层形成相变存储器件的方法

    公开(公告)号：US07772067B2

    公开(公告)日：2010-08-10

    申请号：US12039370

    申请日：2008-02-28

    申请人： Jinil Lee ,  Suk Ho Joo ,  Dohyung Kim ,  Hyunjun Sim ,  Hyeyoung Park ,  Sunglae Cho ,  Dong-Hyun Im

    发明人： Jinil Lee ,  Suk Ho Joo ,  Dohyung Kim ,  Hyunjun Sim ,  Hyeyoung Park ,  Sunglae Cho ,  Dong-Hyun Im

    IPC分类号： H01L21/336

    CPC分类号： H01L45/144 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

    摘要： Methods of forming phase-changeable memory devices include techniques to inhibit void formation in phase-changeable materials in order to increase device reliability. These techniques to inhibit void formation use an electrically insulating growth-inhibiting layer to guide the formation of a phase-changeable material region within a memory cell (e.g., PRAM cell). In particular, methods of forming an integrated circuit memory device include forming an interlayer insulating layer having an opening therein, on a substrate, and then lining sidewalls of the opening with a seed layer (i.e., growth-enhancing layer) that supports growth of a phase-changeable material thereon. An electrically insulating growth-inhibiting layer is then selectively formed on a portion of the interlayer insulating layer surrounding the opening. The formation of the growth-inhibiting layer is followed by a step to selectively grow a phase-changeable material region in the opening, but not on the growth-inhibiting layer.

    摘要翻译： 形成相变存储器件的方法包括抑制相变材料中的空隙形成的技术，以增加器件的可靠性。 抑制空隙形成的这些技术使用电绝缘的生长抑制层来引导存储单元（例如，PRAM单元）内的相变材料区域的形成。 特别地，形成集成电路存储器件的方法包括在衬底上形成其中具有开口的层间绝缘层，然后用支撑生长的种子层（即生长增强层）来衬套开口的侧壁 相变材料。 然后在围绕开口的层间绝缘层的一部分上选择性地形成电绝缘的生长抑制层。 生长抑制层的形成之后是选择性地生长开口中的相变材料区域，而不是在生长抑制层上生长的步骤。

    METHODS OF FORMING PHASE-CHANGEABLE MEMORY DEVICES USING GROWTH-ENHANCING AND GROWTH-INHIBITING LAYERS FOR PHASE-CHANGEABLE MATERIALS
    2.
    发明申请
    METHODS OF FORMING PHASE-CHANGEABLE MEMORY DEVICES USING GROWTH-ENHANCING AND GROWTH-INHIBITING LAYERS FOR PHASE-CHANGEABLE MATERIALS 失效
    使用生长增强和生长抑制层形成可更换材料的相变可变存储器件的方法

    公开(公告)号：US20090130797A1

    公开(公告)日：2009-05-21

    申请号：US12039370

    申请日：2008-02-28

    申请人： Jinil Lee ,  Suk Ho Joo ,  Dohyung Kim ,  Hyunjun Sim ,  Hyeyoung Park ,  Sunglae Cho ,  Dong-Hyun Im

    发明人： Jinil Lee ,  Suk Ho Joo ,  Dohyung Kim ,  Hyunjun Sim ,  Hyeyoung Park ,  Sunglae Cho ,  Dong-Hyun Im

    IPC分类号： H01L45/00

    CPC分类号： H01L45/144 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

    摘要： Methods of forming phase-changeable memory devices include techniques to inhibit void formation in phase-changeable materials in order to increase device reliability. These techniques to inhibit void formation use an electrically insulating growth-inhibiting layer to guide the formation of a phase-changeable material region within a memory cell (e.g., PRAM cell). In particular, methods of forming an integrated circuit memory device include forming an interlayer insulating layer having an opening therein, on a substrate, and then lining sidewalls of the opening with a seed layer (i.e., growth-enhancing layer) that supports growth of a phase-changeable material thereon. An electrically insulating growth-inhibiting layer is then selectively formed on a portion of the interlayer insulating layer surrounding the opening. The formation of the growth-inhibiting layer is followed by a step to selectively grow a phase-changeable material region in the opening, but not on the growth-inhibiting layer.

    摘要翻译： 形成相变存储器件的方法包括抑制相变材料中的空隙形成的技术，以增加器件的可靠性。 抑制空隙形成的这些技术使用电绝缘的生长抑制层来引导存储单元（例如，PRAM单元）内的相变材料区域的形成。 特别地，形成集成电路存储器件的方法包括在衬底上形成其中具有开口的层间绝缘层，然后用支撑生长的种子层（即生长增强层）来衬套开口的侧壁 相变材料。 然后在围绕开口的层间绝缘层的一部分上选择性地形成电绝缘的生长抑制层。 生长抑制层的形成之后是选择性地生长开口中的相变材料区域，而不是在生长抑制层上生长的步骤。

    Methods of forming a semiconductor device including a metal silicon nitride layer
    7.
    发明授权
    Methods of forming a semiconductor device including a metal silicon nitride layer 有权
    形成包括金属氮化硅层的半导体器件的方法

    公开(公告)号：US08389408B2

    公开(公告)日：2013-03-05

    申请号：US12821924

    申请日：2010-06-23

    申请人： Young-Lim Park ,  Jinil Lee ,  Changsu Kim ,  Sugwoo Jung

    发明人： Young-Lim Park ,  Jinil Lee ,  Changsu Kim ,  Sugwoo Jung

    IPC分类号： H01L21/30

    CPC分类号： H01L21/0228 ,  C23C16/34 ,  C23C16/45531 ,  H01L21/02153 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/76843 ,  H01L45/06 ,  H01L45/126 ,  H01L45/16

    摘要： Provided are methods of forming a semiconductor device. The methods include providing a first precursor and a substitute gas into a reaction chamber having a substrate therein, the first precursor having a first substituent and further providing a second precursor into the reaction chamber. Either the first precursor or the second precursor includes a metal element and the other includes a silicon element, at least one of the first substituents of the first precursor are substituted with the substitute gas, the first precursor substituted with the substitute gas is adsorbed onto the substrate, and the second precursor is reacted with the adsorbed first precursor.

    摘要翻译： 提供了形成半导体器件的方法。 所述方法包括将第一前体和替代气体提供到其中具有基底的反应室中，第一前体具有第一取代基并进一步向反应室提供第二前体。 第一前体或第二前体包括金属元素，另一个包含硅元素，第一前体中的至少一个第一取代基被替代气体取代，被替代气体取代的第一前体被吸附到 底物，第二前体与吸附的第一前体反应。

    METHOD OF FORMING VARIABLE RESISTANCE MEMORY DEVICE
    8.
    发明申请
    METHOD OF FORMING VARIABLE RESISTANCE MEMORY DEVICE 有权
    形成可变电阻存储器件的方法

    公开(公告)号：US20110124174A1

    公开(公告)日：2011-05-26

    申请号：US12953945

    申请日：2010-11-24

    申请人： Young-Lim Park ,  Jinil Lee ,  Dongho Ahn ,  Sihyung Lee ,  Gyuhwan Oh

    发明人： Young-Lim Park ,  Jinil Lee ,  Dongho Ahn ,  Sihyung Lee ,  Gyuhwan Oh

    IPC分类号： H01L21/285

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： Provided are a method of forming an electrode of a variable resistance memory device and a variable resistance semiconductor memory device using the method. The method includes: forming a heat electrode; forming a variable resistance material layer on the heat electrode; and forming a top electrode on the variable resistance material layer, wherein the heat electrode includes a nitride of a metal whose atomic radius is greater than that of titanium (Ti) and is formed through a thermal chemical vapor deposition (CVD) method without using plasma.

    摘要翻译： 提供了使用该方法形成可变电阻存储器件的电极和可变电阻半导体存储器件的方法。 该方法包括：形成热电极; 在所述加热电极上形成可变电阻材料层; 以及在所述可变电阻材料层上形成顶部电极，其中所述热电极包括原子半径大于钛（Ti）的金属的氮化物，并且通过热化学气相沉积（CVD）方法形成而不使用等离子体 。

    Method of forming variable resistance memory device
    9.
    发明授权
    Method of forming variable resistance memory device 有权
    形成可变电阻存储器件的方法

    公开(公告)号：US08263455B2

    公开(公告)日：2012-09-11

    申请号：US12953945

    申请日：2010-11-24

    申请人： Young-Lim Park ,  Jinil Lee ,  Dongho Ahn ,  Sihyung Lee ,  Gyuhwan Oh

    发明人： Young-Lim Park ,  Jinil Lee ,  Dongho Ahn ,  Sihyung Lee ,  Gyuhwan Oh

    IPC分类号： H01L21/283

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： Provided are a method of forming an electrode of a variable resistance memory device and a variable resistance semiconductor memory device using the method. The method includes: forming a heat electrode; forming a variable resistance material layer on the heat electrode; and forming a top electrode on the variable resistance material layer, wherein the heat electrode includes a nitride of a metal whose atomic radius is greater than that of titanium (Ti) and is formed through a thermal chemical vapor deposition (CVD) method without using plasma.

    摘要翻译： 提供了使用该方法形成可变电阻存储器件的电极和可变电阻半导体存储器件的方法。 该方法包括：形成热电极; 在所述加热电极上形成可变电阻材料层; 以及在所述可变电阻材料层上形成顶部电极，其中所述热电极包括原子半径大于钛（Ti）的金属的氮化物，并且通过热化学气相沉积（CVD）方法形成而不使用等离子体 。