公开(公告)号：US6043177A

公开(公告)日：2000-03-28

申请号：US786675

申请日：1997-01-21

申请人： John L. Falconer ,  Steven M. George ,  Andrew W. Ott ,  Jason W. Klaus ,  Richard D. Noble ,  Hans H. Funke

发明人： John L. Falconer ,  Steven M. George ,  Andrew W. Ott ,  Jason W. Klaus ,  Richard D. Noble ,  Hans H. Funke

IPC分类号： B01D67/00 ,  B01D71/02 ,  B01J20/28 ,  C23C16/04 ,  C23C16/455 ,  B01J29/04 ,  B01J29/06 ,  C01G17/00

CPC分类号： B01D67/0093 ,  B01D71/028 ,  C23C16/045 ,  C23C16/45525 ,  C23C16/45555 ,  B01D2323/38

摘要： A process for modifying surfaces of zeolites and molecular sieve membranes to decrease effective pore size for separation of materials includes atomic layer controlled vapor or liquid deposition. The atomic layer controlled deposition process steps include (i) exposing the surface to a metal atom coordinated with ligand groups having bonds that are hydrolyzable to form molecular bonded structures on the surface, which structures comprise the metal atoms coordinated with the ligand group or a modified ligand group and then (ii) hydrolyzing the bonds and possibly, but not necessarily, cross-linking the bonds in the ligand or modified ligand group.

摘要翻译： 用于改性沸石和分子筛膜表面以降低用于分离材料的有效孔径的方法包括原子层控制的蒸汽或液体沉积。 原子层控制的沉积工艺步骤包括（i）将表面暴露于与具有可水解的键的配体基团配位的金属原子，以在表面上形成分子键合结构，该结构包含与配体基团配位的金属原子或经修饰的 然后（ii）水解所述键并且可能但不是必然地将配体或修饰的配体基团中的键交联。

公开(公告)号：US6051517A

公开(公告)日：2000-04-18

申请号：US236891

申请日：1999-01-26

申请人： Hans H. Funke ,  Jason W. Klaus ,  Steven M. George ,  Andrew W. Ott ,  John L. Falconer ,  Richard D. Noble

发明人： Hans H. Funke ,  Jason W. Klaus ,  Steven M. George ,  Andrew W. Ott ,  John L. Falconer ,  Richard D. Noble

IPC分类号： B01D67/00 ,  B01D71/02 ,  B01J20/28 ,  C23C16/04 ,  C23C16/455 ,  B01J29/04 ,  B01J29/06 ,  C01G9/00 ,  C01G17/00

CPC分类号： B01D67/0093 ,  B01D71/028 ,  C23C16/045 ,  C23C16/45525 ,  C23C16/45555 ,  B01D2323/38

摘要： A modified zeolite or molecular sieve membrane for separation of materials on a molecular scale. The modified membrane is fabricated to wholly or partially block regions between zeolite crystals to inhibit transfer of larger molecules through the membrane, but without blocking or substantially inhibiting transfer of small molecules through pores in the crystalline structure. The modified membrane has a monomolecular layer deposited on the zeolite surface which has coordinated groups of atoms that include (i) a metal atom bonded to oxygen atoms that are bonded to the zeolite substrate atoms (e.g., silicon atoms) and (ii) either hydroxyl groups bonded to the metal atoms or additional oxygen atoms bonded to the metal atoms.

摘要翻译： 用于在分子尺度上分离材料的改性沸石或分子筛膜。 制造改性膜以完全或部分阻挡沸石晶体之间的区域，以抑制较大分子通过膜的转移，但不阻断或基本上抑制小分子通过晶体结构中的孔的转移。 改性膜具有沉积在沸石表面上的单分子层，其具有协调的原子组，其包括（i）键合到与沸石底物原子（例如硅原子）结合的氧原子的金属原子，和（ii）羟基 与金属原子键合的基团或与金属原子键合的附加氧原子。

公开(公告)号：US07790631B2

公开(公告)日：2010-09-07

申请号：US11603522

申请日：2006-11-21

申请人： Ajay K. Sharma ,  Sean King ,  Dennis Hanken ,  Andrew W. Ott

发明人： Ajay K. Sharma ,  Sean King ,  Dennis Hanken ,  Andrew W. Ott

IPC分类号： H01L21/31

CPC分类号： H01L21/0228 ,  B05D1/185 ,  B05D7/52 ,  H01L21/022 ,  H01L21/28079 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/3141 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76897 ,  H01L29/495 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/6659

摘要： Methods and apparatuses to selectively deposit a dielectric on a self-assembled monolayer (“SAM”) adsorbed metal are described. A wafer includes a device having a first electrode. A first self-assembled monolayer is deposited on the wafer covering the first electrode. Next, a portion of the first self-assembled monolayer is removed to expose the first electrode. The first self-assembled monolayer includes a hydrophobic layer. Further, second self-assembled monolayer is deposited on the first electrode. The second self-assembled monolayer includes a hydrophilic layer. Next, an insulating layer is deposited on the second self-assembled monolayer. Further, self-aligned contacts to one or more second electrodes of the device are formed.

摘要翻译： 描述了在自组装单层（“SAM”）吸附的金属上选择性地沉积电介质的方法和装置。 晶片包括具有第一电极的器件。 第一自组装单层沉积在覆盖第一电极的晶片上。 接下来，去除第一自组装单层的一部分以露出第一电极。 第一自组装单层包括疏水层。 此外，第二自组装单层沉积在第一电极上。 第二自组装单层包括亲水层。 接下来，绝缘层沉积在第二自组装单层上。 此外，形成了与器件的一个或多个第二电极的自对准接触。

公开(公告)号：US07135775B2

公开(公告)日：2006-11-14

申请号：US10292326

申请日：2002-11-12

申请人： Stephen T. Chambers ,  Valery M. Dubin ,  Andrew W. Ott ,  Christine S. Hau-Riege

发明人： Stephen T. Chambers ,  Valery M. Dubin ,  Andrew W. Ott ,  Christine S. Hau-Riege

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L23/53233 ,  H01L21/2885 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76886 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method, apparatus, system, and machine-readable medium for an interconnect structure in a semiconductor device and its method of formation is disclosed. Embodiments comprise a carbon-doped and silicon-doped interconnect having a concentration of silicon to avoid to forming a copper silicide layer between an interconnect and a passivation layer. Some embodiments provide unexpected results in electromigration reliability in regards to activation energy and/or mean time to failure.

公开(公告)号：US06713873B1

公开(公告)日：2004-03-30

申请号：US10306642

申请日：2002-11-27

申请人： Jennifer O'Loughlin ,  Andrew W. Ott ,  Bruce J. Tufts

发明人： Jennifer O'Loughlin ,  Andrew W. Ott ,  Bruce J. Tufts

IPC分类号： H01L2348

CPC分类号： H01L21/76834 ,  H01L21/3141 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76832 ,  Y10T428/24917 ,  Y10T428/24926

摘要： The present invention discloses a method including: determining whether a surface of a dielectric layer is reactive; activating the surface if the surface is not reactive; performing a cycle on the surface, the cycle including: reacting the surface with a metal; and activating the metal. The present invention also discloses a structure including: a substrate; a first interlayer dielectric located over the substrate; a first adhesion promoter layer located over the first interlayer dielectric; an etch stop layer located over the first adhesion promoter layer; a second adhesion promoter layer located over the etch stop layer; and a second interlayer dielectric located over the second adhesion promoter layer.

摘要翻译： 本发明公开了一种方法，包括：确定电介质层的表面是否是反应性的; 如果表面不反应，激活表面; 在表面上进行循环，循环包括：使表面与金属反应; 并激活金属。 本发明还公开了一种结构，包括：基板; 位于所述衬底上方的第一层间电介质; 位于所述第一层间电介质上的第一粘附促进剂层; 位于所述第一粘附促进剂层上方的蚀刻停止层; 位于所述蚀刻停止层上方的第二粘附促进剂层; 以及位于所述第二粘附促进层上方的第二层间电介质。

公开(公告)号：US07199473B2

公开(公告)日：2007-04-03

申请号：US11028884

申请日：2005-01-03

申请人： Sean W. King ,  Andrew W. Ott

发明人： Sean W. King ,  Andrew W. Ott

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53295 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76849 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide a device with a hard mask layer between first and second ILD layers. The hard mask layer may have a k value approximately equal to the first and/or second ILD layers.

摘要翻译： 本发明的实施例提供一种在第一和第二ILD层之间具有硬掩模层的装置。 硬掩模层可以具有近似等于第一和/或第二ILD层的k值。

公开(公告)号：US06518184B1

公开(公告)日：2003-02-11

申请号：US10051971

申请日：2002-01-18

申请人： Stephen T. Chambers ,  Valery M. Dubin ,  Andrew W. Ott ,  Christine S. Hau-Riege

发明人： Stephen T. Chambers ,  Valery M. Dubin ,  Andrew W. Ott ,  Christine S. Hau-Riege

IPC分类号： H01L2144

CPC分类号： H01L23/53233 ,  H01L21/2885 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76886 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method, apparatus, system, and machine-readable medium for an interconnect structure in a semiconductor device and its method of formation is disclosed. Embodiments comprise a carbon-doped and silicon-doped interconnect having a concentration of silicon to avoid to forming a copper silicide layer between an interconnect and a passivation layer. Some embodiments provide unexpected results in electromigration reliability in regards to activation energy and/or mean time to failure.

公开(公告)号：US20080116481A1

公开(公告)日：2008-05-22

申请号：US11603522

申请日：2006-11-21

申请人： Ajay K. Sharma ,  Sean King ,  Dennis Hanken ,  Andrew W. Ott

发明人： Ajay K. Sharma ,  Sean King ,  Dennis Hanken ,  Andrew W. Ott

IPC分类号： B05D5/12 ,  H01L29/40

CPC分类号： H01L21/0228 ,  B05D1/185 ,  B05D7/52 ,  H01L21/022 ,  H01L21/28079 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/3141 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76897 ,  H01L29/495 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/6659

摘要： Methods and apparatuses to selectively deposit a dielectric on a self-assembled monolayer (“SAM”) adsorbed metal are described. A wafer includes a device having a first electrode. A first self-assembled monolayer is deposited on the wafer covering the first electrode. Next, a portion of the first self-assembled monolayer is removed to expose the first electrode. The first self-assembled monolayer includes a hydrophobic layer. Further, second self-assembled monolayer is deposited on the first electrode. The second self-assembled monolayer includes a hydrophilic layer. Next, an insulating layer is deposited on the second self-assembled monolayer. Further, self-aligned contacts to one or more second electrodes of the device are formed.

摘要翻译： 描述了在自组装单层（“SAM”）吸附的金属上选择性地沉积电介质的方法和装置。 晶片包括具有第一电极的器件。 第一自组装单层沉积在覆盖第一电极的晶片上。 接下来，去除第一自组装单层的一部分以露出第一电极。 第一自组装单层包括疏水层。 此外，第二自组装单层沉积在第一电极上。 第二自组装单层包括亲水层。 接下来，绝缘层沉积在第二自组装单层上。 此外，形成了与器件的一个或多个第二电极的自对准接触。

公开(公告)号：US07169715B2

公开(公告)日：2007-01-30

申请号：US10394104

申请日：2003-03-21

申请人： Andrew W. Ott ,  Grant M. Kloster ,  Robert P. Meagley ,  Michael D. Goodner

发明人： Andrew W. Ott ,  Grant M. Kloster ,  Robert P. Meagley ,  Michael D. Goodner

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/7682 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/31695

摘要： In one embodiment, the present invention includes introducing a conventional precursor and an organic precursor having an organic porogen into a vapor deposition apparatus; and forming a dielectric layer having the organic porogen on a substrate within the vapor deposition apparatus from the precursors. In certain embodiments, at least a portion of the organic porogen may be removed after subsequent processing, such as dual damascene processing.

摘要翻译： 在一个实施方案中，本发明包括将常规前体和具有有机致孔剂的有机前体引入蒸镀装置中; 以及在所述前体中在所述蒸镀装置内的基板上形成具有所述有机致孔剂的介电层。 在某些实施方案中，有机致孔剂的至少一部分可以在后续加工之后被除去，例如双镶嵌加工。

公开(公告)号：US07138158B2

公开(公告)日：2006-11-21

申请号：US10377061

申请日：2003-02-28

申请人： Robert P. Meagley ,  Michael D. Goodner ,  Andrew W. Ott ,  Grant M. Kloster ,  Michael L. McSwiney ,  Bob E. Leet

发明人： Robert P. Meagley ,  Michael D. Goodner ,  Andrew W. Ott ,  Grant M. Kloster ,  Michael L. McSwiney ,  Bob E. Leet

IPC分类号： B05D3/10 ,  C23C16/00

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633

摘要： In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.

摘要翻译： 在一个实施方案中，本发明包括将含有烃取代基的前体和任选的第二常规或含烃前体引入气相沉积设备中; 以及在所述气相沉积设备内的所述前体上形成具有所述烃取代基的介电层。 在某些实施方案中，至少一部分烃取代基可以稍后从介电层去除以降低其密度。