公开(公告)号：US06713873B1

公开(公告)日：2004-03-30

申请号：US10306642

申请日：2002-11-27

申请人： Jennifer O'Loughlin ,  Andrew W. Ott ,  Bruce J. Tufts

发明人： Jennifer O'Loughlin ,  Andrew W. Ott ,  Bruce J. Tufts

IPC分类号： H01L2348

CPC分类号： H01L21/76834 ,  H01L21/3141 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76832 ,  Y10T428/24917 ,  Y10T428/24926

摘要： The present invention discloses a method including: determining whether a surface of a dielectric layer is reactive; activating the surface if the surface is not reactive; performing a cycle on the surface, the cycle including: reacting the surface with a metal; and activating the metal. The present invention also discloses a structure including: a substrate; a first interlayer dielectric located over the substrate; a first adhesion promoter layer located over the first interlayer dielectric; an etch stop layer located over the first adhesion promoter layer; a second adhesion promoter layer located over the etch stop layer; and a second interlayer dielectric located over the second adhesion promoter layer.

摘要翻译： 本发明公开了一种方法，包括：确定电介质层的表面是否是反应性的; 如果表面不反应，激活表面; 在表面上进行循环，循环包括：使表面与金属反应; 并激活金属。 本发明还公开了一种结构，包括：基板; 位于所述衬底上方的第一层间电介质; 位于所述第一层间电介质上的第一粘附促进剂层; 位于所述第一粘附促进剂层上方的蚀刻停止层; 位于所述蚀刻停止层上方的第二粘附促进剂层; 以及位于所述第二粘附促进层上方的第二层间电介质。

公开(公告)号：US20130157466A1

公开(公告)日：2013-06-20

申请号：US13766696

申请日：2013-02-13

申请人： Keith Fox ,  Dong Niu ,  Joseph L. Womack ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk ,  Jennifer O'Loughlin

发明人： Keith Fox ,  Dong Niu ,  Joseph L. Womack ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk ,  Jennifer O'Loughlin

IPC分类号： H01L21/306

CPC分类号： H01L21/30604 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/54 ,  H01J37/32082 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207 ,  H01L28/40

摘要： The embodiments herein relate to plasma-enhanced chemical vapor deposition methods and apparatus for depositing silicon nitride on a substrate. The disclosed methods provide silicon nitride films having wet etch rates (e.g., in dilute hydrofluoric acid or hot phosphoric acid) suitable for certain applications such as vertical memory devices. Further, the methods provide silicon nitride films having defined levels of internal stress suitable for the applications in question. These silicon nitride film characteristics can be set or tuned by controlling, for example, the composition and flow rates of the precursors, as well as the RF power supplied to the plasma and the pressure in the reactor. In certain embodiments, a boron-containing precursor is added.

摘要翻译： 本文的实施方案涉及用于在衬底上沉积氮化硅的等离子体增强化学气相沉积方法和装置。 所公开的方法提供了适用于某些应用例如垂直存储器件的具有湿蚀刻速率（例如，在稀氢氟酸或热磷酸中）的氮化硅膜。 此外，这些方法提供具有适合于所讨论的应用的具有确定的内部应力水平的氮化硅膜。 这些氮化硅膜特性可以通过控制例如前体的组成和流速以及提供给等离子体的RF功率和反应器中的压力来设定或调节。 在某些实施方案中，加入含硼前体。

公开(公告)号：US08709551B2

公开(公告)日：2014-04-29

申请号：US12970853

申请日：2010-12-16

申请人： Keith Fox ,  Dong Niu ,  Joe Womack ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk ,  Jennifer O'Loughlin

发明人： Keith Fox ,  Dong Niu ,  Joe Womack ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk ,  Jennifer O'Loughlin

IPC分类号： C23C16/509 ,  C23C16/505 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/24 ,  H01L21/02 ,  H01L21/8229

CPC分类号： C23C16/505 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02104 ,  H01L21/02123 ,  H01L21/02129 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02263 ,  H01L21/02274 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/8229

摘要： Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate.

摘要翻译： 描述了用于沉积超光滑含硅膜和膜堆的方法和硬件。 在一个实例中，公开了在等离子体增强化学气相沉积设备中在衬底上形成含硅膜的方法的实施例，该方法包括向等离子体增强化学气相沉积设备供应含硅反应物; 向等离子体增强化学气相沉积设备供应共反应物; 向等离子体增强化学气相沉积设备的处理站提供电容耦合等离子体，所述等离子体包括由含硅反应物产生的硅自由基和由共反应物产生的共反应物基团; 以及将所述含硅膜沉积在所述基底上，所述含硅膜的折射率在1.4和2.1之间，所述含硅膜还具有在硅衬底上测得的绝对粗糙度小于或等于4.5的值 。

公开(公告)号：US20110120377A1

公开(公告)日：2011-05-26

申请号：US13019854

申请日：2011-02-02

申请人： George Andrew Antonelli ,  Jennifer O'Loughlin ,  Tony Xavier ,  Mandyam Sriram ,  Bart Van Schravendijk ,  Vishwanathan Rangarajan ,  Seshasayee Varadarajan ,  Bryan L. Buckalew

发明人： George Andrew Antonelli ,  Jennifer O'Loughlin ,  Tony Xavier ,  Mandyam Sriram ,  Bart Van Schravendijk ,  Vishwanathan Rangarajan ,  Seshasayee Varadarajan ,  Bryan L. Buckalew

IPC分类号： H01L21/4763

CPC分类号： H01L21/02068 ,  C23C16/0245 ,  C23C16/54 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02074 ,  H01L21/02315 ,  H01L21/3105 ,  H01L21/67201 ,  H01L21/76826 ,  H01L21/76862 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.

摘要翻译： 本文公开了通过远程等离子体处理在半导体晶片制造工艺中清洁界面的实施例。 例如，在一个所公开的实施例中，半导体处理装置包括处理室，经由传送端口耦合到处理室的负载锁，设置在负载锁中并被配置为支撑加载锁中的晶片的晶片基座， 远程等离子体源，被配置为将远程等离子体提供给负载锁定;以及离子过滤器，其布置在远程等离子体源和晶片基座之间。

公开(公告)号：US08217513B2

公开(公告)日：2012-07-10

申请号：US13019854

申请日：2011-02-02

申请人： George Andrew Antonelli ,  Jennifer O'Loughlin ,  Tony Xavier ,  Mandyam Sriram ,  Bart van Schravendijk ,  Vishwanathan Rangarajan ,  Seshasayee Varadarajan ,  Bryan L. Buckalew

发明人： George Andrew Antonelli ,  Jennifer O'Loughlin ,  Tony Xavier ,  Mandyam Sriram ,  Bart van Schravendijk ,  Vishwanathan Rangarajan ,  Seshasayee Varadarajan ,  Bryan L. Buckalew

IPC分类号： H01L23/34

CPC分类号： H01L21/02068 ,  C23C16/0245 ,  C23C16/54 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02074 ,  H01L21/02315 ,  H01L21/3105 ,  H01L21/67201 ,  H01L21/76826 ,  H01L21/76862 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus includes a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.

摘要翻译： 本文公开了通过远程等离子体处理在半导体晶片制造工艺中清洁界面的实施例。 例如，在一个所公开的实施例中，半导体处理装置包括处理室，经由传送端口与处理室耦合的负载锁定，设置在负载锁中并被配置为支撑加载锁中的晶片的晶片基座， 远程等离子体源，被配置为将远程等离子体提供给负载锁定;以及离子过滤器，其布置在远程等离子体源和晶片基座之间。

公开(公告)号：US08084339B2

公开(公告)日：2011-12-27

申请号：US12484047

申请日：2009-06-12

申请人： George Andrew Antonelli ,  Jennifer O'Loughlin ,  Tony Xavier ,  Mandyam Sriram ,  Bart Van Schravendijk ,  Vishwanathan Rangarajan ,  Seshasayee Varadarajan ,  Bryan L. Buckalew

发明人： George Andrew Antonelli ,  Jennifer O'Loughlin ,  Tony Xavier ,  Mandyam Sriram ,  Bart Van Schravendijk ,  Vishwanathan Rangarajan ,  Seshasayee Varadarajan ,  Bryan L. Buckalew

IPC分类号： H01L21/261

CPC分类号： H01L21/02068 ,  C23C16/0245 ,  C23C16/54 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02074 ,  H01L21/02315 ,  H01L21/3105 ,  H01L21/67201 ,  H01L21/76826 ,  H01L21/76862 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus includes a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.

摘要翻译： 本文公开了通过远程等离子体处理在半导体晶片制造工艺中清洁界面的实施例。 例如，在一个所公开的实施例中，半导体处理装置包括处理室，经由传送端口与处理室耦合的负载锁定，设置在负载锁中并被配置为支撑加载锁中的晶片的晶片基座， 远程等离子体源，被配置为将远程等离子体提供给负载锁定;以及离子过滤器，其布置在远程等离子体源和晶片基座之间。

公开(公告)号：US07223705B2

公开(公告)日：2007-05-29

申请号：US10429984

申请日：2003-05-06

申请人： Mandyam A. Sriram ,  Jennifer O'Loughlin

发明人： Mandyam A. Sriram ,  Jennifer O'Loughlin

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02345 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3148 ,  H01L21/31695 ,  H01L21/3185 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L2221/1047

摘要： A method of modifying the porosity of a thickness of a layer of porous dielectric material having a surface and formed on a semiconductor substrate is provided by exposing the porous dielectric material to a sufficient temperature in the presence of a first gas to drive moisture particles out of the pores. Modifying also includes, exposing the porous dielectric material to a radio frequency stimulus of sufficient power in the presence of a second gas to densify a thickness of the porous dielectric material to reduce or prohibit subsequent absorption of moisture or reactant gas particles by the thickness or porous dielectric material.

摘要翻译： 通过在第一气体的存在下将多孔电介质材料暴露于足够的温度，以将水分颗粒从外部暴露出来，来提供改变具有表面并形成在半导体衬底上的多孔介电材料层的厚度的孔隙率的方法 毛孔。 修改还包括：在存在第二气体的情况下将多孔介电材料暴露于具有足够功率的射频刺激，以致致密化多孔电介质材料的厚度，以减少或禁止随后通过厚度或多孔性吸收水分或反应气体颗粒 介电材料。

公开(公告)号：US08741394B2

公开(公告)日：2014-06-03

申请号：US12970846

申请日：2010-12-16

申请人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

发明人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC分类号： H05H1/24

CPC分类号： C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

摘要翻译： 描述了通过等离子体增强化学气相沉积沉积膜堆叠的方法。 在一个实例中，提供了一种用于在基底上沉积薄膜叠层的方法，其中薄膜叠层包括不同组成的薄膜，并且沉淀是在原位进行的。 该方法包括在第一等离子体活化膜沉积阶段中，在衬底上沉积具有第一膜组成的第一层膜; 在第二等离子体激活沉积阶段中，在第一层膜上沉积具有第二膜组成的第二层膜; 以及在将等离子体的组成从第一等离子体激活膜沉积阶段转移到第二等离子体激活膜沉积阶段期间维持等离子体。

公开(公告)号：US20130171834A1

公开(公告)日：2013-07-04

申请号：US13671424

申请日：2012-11-07

申请人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Spiram ,  George Andrew Antonelli ,  Bart van Schravendijk

发明人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Spiram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC分类号： H01L21/02

CPC分类号： H01L21/0234 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274

摘要： Disclosed herein are methods of forming a film stack which may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Also disclosed herein are process station apparatuses for forming a film stack of silicon nitride and silicon oxide films which may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

摘要翻译： 本文公开了形成膜堆叠的方法，其可以包括由含氮前体与含硅前体的反应形成的氮化硅膜的等离子体加速沉积，等离子体加速从处理室中显着消除含硅前体，等离子体 在由含硅前体与氧化剂的反应形成的氮化硅膜的顶部加速沉积氧化硅膜，并且等离子体加速了处理室中的氧化剂的显着消除。 本文还公开了用于形成氮化硅和氧化硅膜的膜堆叠的处理站装置，其可以包括处理室，一个或多个气体输送管线，一个或多个RF发生器，以及具有指令的机器可读介质的系统控制器 用于操作一个或多个气体输送管线和一个或多个RF发生器。

公开(公告)号：US20110236600A1

公开(公告)日：2011-09-29

申请号：US12970853

申请日：2010-12-16

申请人： Keith Fox ,  Dong Niu ,  Joe Womack ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk ,  Jennifer O'Loughlin

发明人： Keith Fox ,  Dong Niu ,  Joe Womack ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk ,  Jennifer O'Loughlin

IPC分类号： H05H1/24

CPC分类号： C23C16/505 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02104 ,  H01L21/02123 ,  H01L21/02129 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02263 ,  H01L21/02274 ,  H01L21/0245 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/8229

摘要： Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate.

摘要翻译： 描述了用于沉积超光滑含硅膜和膜堆的方法和硬件。 在一个实例中，公开了在等离子体增强化学气相沉积设备中在衬底上形成含硅膜的方法的实施例，该方法包括向等离子体增强化学气相沉积设备供应含硅反应物; 向等离子体增强化学气相沉积设备供应共反应物; 向等离子体增强化学气相沉积设备的处理站提供电容耦合等离子体，所述等离子体包括由含硅反应物产生的硅自由基和由共反应物产生的共反应物基团; 以及将所述含硅膜沉积在所述基底上，所述含硅膜的折射率在1.4和2.1之间，所述含硅膜还具有在硅衬底上测得的绝对粗糙度小于或等于4.5的值 。