公开(公告)号：US20120258606A1

公开(公告)日：2012-10-11

申请号：US13356962

申请日：2012-01-24

申请人： John Patrick Holland ,  Peter L. G. Ventzek ,  Harmeet Singh ,  Jun Shinagawa ,  Akira Koshiishi

发明人： John Patrick Holland ,  Peter L. G. Ventzek ,  Harmeet Singh ,  Jun Shinagawa ,  Akira Koshiishi

IPC分类号： H01L21/26 ,  H01L21/3065

CPC分类号： H01J37/32357 ,  H01J37/32376 ,  H01J37/32449 ,  H01J37/32596

摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.

摘要翻译： 半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。 该系统还包括与处理室分开限定的等离子体室。 等离子体室被定义为产生等离子体。 该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。 多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。 该系统还包括用于将电子注入到处理室中以控制处理室内的电子能量分布的电子注入装置，从而控制处理室内的离子 - 自由基密度比。 在一个实施例中，电子束源被定义为将电子束透过衬底支撑件上方并穿过衬底支撑件的处理室。

公开(公告)号：US09177756B2

公开(公告)日：2015-11-03

申请号：US13357003

申请日：2012-01-24

申请人： John Patrick Holland ,  Peter L. G. Ventzek ,  Harmeet Singh ,  Jun Shinagawa ,  Akira Koshiishi

发明人： John Patrick Holland ,  Peter L. G. Ventzek ,  Harmeet Singh ,  Jun Shinagawa ,  Akira Koshiishi

IPC分类号： H01L21/3065 ,  C23F1/00 ,  H01J37/04 ,  H01J37/32

CPC分类号： H01J37/04 ,  H01J37/32018 ,  H01J37/32357 ,  H01J37/32596

摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electrode disposed within the processing chamber separate from the substrate support. The system also includes a power supply electrically connected to the electrode. The power supply is defined to supply electrical power to the electrode so as to liberate electrons from the electrode into the processing chamber.

摘要翻译： 半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。 该系统还包括与处理室分开限定的等离子体室。 等离子体室被定义为产生等离子体。 该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。 多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。 该系统还包括设置在与衬底支撑件分开的处理室内的电极。 该系统还包括电连接到电极的电源。 电源被定义为向电极提供电力，以便将电子从电极释放到处理室中。

公开(公告)号：US09111728B2

公开(公告)日：2015-08-18

申请号：US13356962

申请日：2012-01-24

申请人： John Patrick Holland ,  Peter L. G. Ventzek ,  Harmeet Singh ,  Jun Shinagawa ,  Akira Koshiishi

发明人： John Patrick Holland ,  Peter L. G. Ventzek ,  Harmeet Singh ,  Jun Shinagawa ,  Akira Koshiishi

IPC分类号： H01J37/077 ,  H01J37/065 ,  H01J37/32 ,  H01J37/16

CPC分类号： H01J37/32357 ,  H01J37/32376 ,  H01J37/32449 ,  H01J37/32596

摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.

摘要翻译： 半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。 该系统还包括与处理室分开限定的等离子体室。 等离子体室被定义为产生等离子体。 该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。 多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。 该系统还包括用于将电子注入到处理室中以控制处理室内的电子能量分布的电子注入装置，从而控制处理室内的离子 - 自由基密度比。 在一个实施例中，电子束源被定义为将电子束透过衬底支撑件上方并穿过衬底支撑件的处理室。

公开(公告)号：US08980046B2

公开(公告)日：2015-03-17

申请号：US13431836

申请日：2012-03-27

申请人： Akira Koshiishi ,  Peter L. G. Ventzek ,  Jun Shinagawa ,  John Patrick Holland

发明人： Akira Koshiishi ,  Peter L. G. Ventzek ,  Jun Shinagawa ,  John Patrick Holland

IPC分类号： C23F1/00

CPC分类号： C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  H01J37/32422 ,  H05H1/46 ,  H05H1/48 ,  H05H2001/466

摘要： A top plate assembly is positioned above and spaced apart from the substrate support, such that a processing region exists between the top plate assembly and the substrate support. The top plate assembly includes a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber. Adjacently positioned ones of the central and annular-shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween. Each of the central and annular-shaped plasma generation microchambers is defined to generate a corresponding plasma therein and supply reactive constituents of its plasma to the processing region between the top plate assembly and the substrate support.

摘要翻译： 顶板组件位于基板支撑件的上方并与其间隔开，使得在顶板组件和基板支撑件之间存在处理区域。 顶板组件包括中心等离子体生成微型室和围绕中心等离子体产生微室以同心方式定位的多个环形等离子体产生微室。 中心和环形等离子体产生微室中的相邻定位的等离子体生成微室彼此间隔开，以便在它们之间形成多个轴向排气孔。 中心和环形等离子体产生微室中的每一个被定义为在其中产生相应的等离子体，并且将其等离子体的反应性组分提供给顶板组件和衬底支撑件之间的加工区域。

公开(公告)号：US20130157469A1

公开(公告)日：2013-06-20

申请号：US13431836

申请日：2012-03-27

申请人： Akira Koshiishi ,  Peter L. G. Ventzek ,  Jun Shinagawa ,  John Patrick Holland

发明人： Akira Koshiishi ,  Peter L. G. Ventzek ,  Jun Shinagawa ,  John Patrick Holland

IPC分类号： H01L21/3065 ,  H05H1/24 ,  C23C16/50

CPC分类号： C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  H01J37/32422 ,  H05H1/46 ,  H05H1/48 ,  H05H2001/466

摘要： A top plate assembly is positioned above and spaced apart from the substrate support, such that a processing region exists between the top plate assembly and the substrate support. The top plate assembly includes a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber. Adjacently positioned ones of the central and annular-shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween. Each of the central and annular-shaped plasma generation microchambers is defined to generate a corresponding plasma therein and supply reactive constituents of its plasma to the processing region between the top plate assembly and the substrate support.

摘要翻译： 顶板组件位于基板支撑件的上方并与其间隔开，使得在顶板组件和基板支撑件之间存在处理区域。 顶板组件包括中心等离子体生成微型室和围绕中心等离子体产生微室以同心方式定位的多个环形等离子体产生微室。 中心和环形等离子体产生微室中的相邻定位的等离子体生成微室彼此间隔开，以便在它们之间形成多个轴向排气孔。 中心和环形等离子体产生微室中的每一个被定义为在其中产生相应的等离子体，并且将其等离子体的反应性组分提供给顶板组件和衬底支撑件之间的加工区域。

公开(公告)号：US20120258607A1

公开(公告)日：2012-10-11

申请号：US13357044

申请日：2012-01-24

申请人： John Patrick Holland ,  Peter L.G. Ventzek ,  Harmeet Singh ,  Jun Shinagawa ,  Akira Koshiishi

发明人： John Patrick Holland ,  Peter L.G. Ventzek ,  Harmeet Singh ,  Jun Shinagawa ,  Akira Koshiishi

IPC分类号： H01L21/26 ,  H01L21/3065

CPC分类号： H01J37/32357

摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes a plurality of power delivery components defined to deliver power to the plurality of fluid transmission pathways, so as to generate supplemental plasma within the plurality of fluid transmission pathways. The plurality of fluid transmission pathways are defined to supply reactive constituents of the supplemental plasma to the processing chamber.

摘要翻译： 半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。 该系统还包括与处理室分开限定的等离子体室。 等离子体室被定义为产生等离子体。 该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。 多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。 该系统还包括多个功率输送部件，其被定义成将功率输送到多个流体传输路径，以便在多个流体传输通路内产生补充等离子体。 多个流体传输路径被限定为将补充等离子体的反应性成分提供给处理室。

公开(公告)号：US20120258601A1

公开(公告)日：2012-10-11

申请号：US13357003

申请日：2012-01-24

申请人： John Patrick Holland ,  Peter L.G. Ventzek ,  Harmeet Singh ,  Jun Shinagawa ,  Akira Koshiishi

发明人： John Patrick Holland ,  Peter L.G. Ventzek ,  Harmeet Singh ,  Jun Shinagawa ,  Akira Koshiishi

IPC分类号： H01L21/3065

CPC分类号： H01J37/04 ,  H01J37/32018 ,  H01J37/32357 ,  H01J37/32596

摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electrode disposed within the processing chamber separate from the substrate support. The system also includes a power supply electrically connected to the electrode. The power supply is defined to supply electrical power to the electrode so as to liberate electrons from the electrode into the processing chamber.

摘要翻译： 半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。 该系统还包括与处理室分开限定的等离子体室。 等离子体室被定义为产生等离子体。 该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。 多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。 该系统还包括设置在与衬底支撑件分开的处理室内的电极。 该系统还包括电连接到电极的电源。 电源被定义为向电极提供电力，以便将电子从电极释放到处理室中。

公开(公告)号：US07449414B2

公开(公告)日：2008-11-11

申请号：US11499678

申请日：2006-08-07

申请人： Peter L. G. Ventzek ,  Lee Chen ,  Akira Koshiishi ,  Ikuo Sawada

发明人： Peter L. G. Ventzek ,  Lee Chen ,  Akira Koshiishi ,  Ikuo Sawada

IPC分类号： H01L21/302

CPC分类号： H05H1/44 ,  B05D1/32 ,  B05D1/62 ,  B05D3/145 ,  H01J37/32027 ,  H01J37/32036 ,  H01J37/32082 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802

摘要： A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with a hydrocarbon chemistry or hydrofluorocarbon chemistry or fluorocarbon chemistry or combination of two or more thereof prior to proceeding with the etching process.

摘要翻译： 描述了在蚀刻下面的薄膜之前对掩模层进行预处理的方法。 使用通过弹道电子束增强的等离子体蚀刻诸如电介质膜的薄膜。 为了减少图案定义的损失，例如线边缘粗糙度效应，在进行蚀刻工艺之前，用烃化学或氢氟烃化学或碳氟化合物或其两种或更多种的组合处理掩模层。

公开(公告)号：US07642193B2

公开(公告)日：2010-01-05

申请号：US11499680

申请日：2006-08-07

申请人： Peter L. G. Ventzek ,  Lee Chen ,  Akira Koshiishi ,  Ikuo Sawada

发明人： Peter L. G. Ventzek ,  Lee Chen ,  Akira Koshiishi ,  Ikuo Sawada

IPC分类号： H01L21/302

CPC分类号： H01L21/0273 ,  H01J37/32027 ,  H01J37/32082 ,  H01L21/0337

摘要： A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with an oxygen-containing plasma or halogen-containing plasma or a noble gas plasma or a combination of two or more thereof prior to proceeding with the etching process.

摘要翻译： 描述了在蚀刻下面的薄膜之前对掩模层进行预处理的方法。 使用通过弹道电子束增强的等离子体蚀刻诸如电介质膜的薄膜。 为了减少图案定义的损失，例如线边缘粗糙度效应，在进行处理之前，用含氧等离子体或含卤素的等离子体或惰性气体等离子体或其两种或更多种的组合处理掩模层 蚀刻工艺。

公开(公告)号：US08137471B2

公开(公告)日：2012-03-20

申请号：US12696323

申请日：2010-01-29

申请人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

发明人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC分类号： C23C16/00

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。