公开(公告)号：US07579604B2

公开(公告)日：2009-08-25

申请号：US11445722

申请日：2006-06-02

Applicant: John W. Vanderpot ,  Yongzhang Huang

Inventor： John W. Vanderpot ,  Yongzhang Huang

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination associated with ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and selectively travels through the mass analyzer to the end station, based on a position of a beam stop assembly. The beam stop assembly selectively prevents the ion beam from entering and/or exiting the mass analyzer, therein minimizing contamination associated with an unstable ion source during transition periods such as a start-up of the ion implantation system.

Abstract translation: 提供了用于减轻与离子注入相关的污染的系统，方法和装置。 提供了一种位于离子源和终端之间的离子源，终端站和质量分析器，其中离子源由离子源形成，并且基于位置，选择性地通过质量分析器传送到终端站 光束挡块组件。 光束停止组件选择性地防止离子束进入和/或离开质量分析器，其中最小化在诸如离子注入系统的启动的过渡期间与不稳定离子源相关联的污染。

公开(公告)号：US07547899B2

公开(公告)日：2009-06-16

申请号：US11445677

申请日：2006-06-02

Applicant: John W. Vanderpot ,  Yongzhang Huang

Inventor： John W. Vanderpot ,  Yongzhang Huang

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.

Abstract translation: 提供了一种用于减少离子注入期间污染的系统，方法和装置。 提供了位于离子源和终端之间的离子源，端站和质量分析器，其中离子束由离子源形成并通过质量分析器传送到终端站。 包括粒子收集器，颗粒吸引子和屏蔽的离子束转储组件与质量分析器相关联，其中，所述粒子吸引子的电位可操作以吸引和约束所述颗粒收集器内的污染颗粒，并且其中所述屏蔽件可操作为 屏蔽质子分析仪内离子束电位的吸引子的电位。

公开(公告)号：USRE36200E

公开(公告)日：1999-04-27

申请号：US647002

申请日：1996-05-09

Applicant: Donald W. Berrian ,  Ernest M. Santin ,  William A. Tout ,  Peter M. Nunes ,  John W. Vanderpot

Inventor： Donald W. Berrian ,  Ernest M. Santin ,  William A. Tout ,  Peter M. Nunes ,  John W. Vanderpot

IPC: G01D1/04 ,  G01D1/12 ,  G01D1/14 ,  G01D1/18 ,  G01D9/00 ,  G01D21/00 ,  G01K1/02 ,  G01K7/22 ,  G01D1/00 ,  G01D1/10 ,  G01K7/00

CPC classification number: G01D1/04 ,  G01D1/12 ,  G01D1/14 ,  G01D9/005 ,  G01K1/022

Abstract: Apparatus for monitoring an externally applied parameter to selected products. The invention involves a housing enclosing a sensor, and a monitoring and output network. The sensor has a characteristic that varies in some predetermined manner with variation in the monitored parameter. The monitoring and output network involves a sensor which produces a signal representative of the monitored characteristic. Values associated with the signal are stored in a memory device for subsequent, selected retrieval.

Abstract translation: 用于监视所选产品的外部应用参数的装置。 本发明涉及包围传感器的壳体，以及监测和输出网络。 传感器具有随监视参数的变化以某种预定方式变化的特性。 监测和输出网络涉及产生代表被监测特征的信号的传感器。 与信号相关联的值存储在存储器装置中，用于随后的选择检索。

公开(公告)号：US06428262B1

公开(公告)日：2002-08-06

申请号：US09637096

申请日：2000-08-10

Applicant: John W. Vanderpot ,  John D. Pollock

Inventor： John W. Vanderpot ,  John D. Pollock

IPC: B65G4907

CPC classification number: H01L21/67757 ,  H01L21/67745 ,  H01L21/67754 ,  H01L21/67772 ,  H01L21/67778 ,  H01L21/67781 ,  Y10S414/139

Abstract: The system processes one or more wafers from a FOUP to an ion processing chamber. A group of wafers from the FOUP is removed by a first end effector and loaded into a load lock through a lower door in an atmosphere opened position. The load lock is sealed, evacuated, and an upper door is opened to a vacuum opened position. A second end effector connected to a 3-axis robot moves one of the wafers from the load lock to the ion processing chamber. A wafer alignment robot can also be used. Wafers are sequentially processed from the load lock to the processing chamber until complete; and then the wafers within the load lock are sealed, pressurized, and moved back to the FOUP. A second load lock, and multiple FOUPs, are used to increase throughput.

Abstract translation: 该系统处理从FOUP到离子处理室的一个或多个晶片。 来自FOUP的一组晶片被第一端部执行器移除，并通过位于大气打开位置的下门装载到装载锁中。 负载锁被密封，抽真空，并且上门打开到真空打开位置。 连接到3轴机器人的第二端部执行器将一个晶片从负载锁移动到离子处理室。 也可以使用晶片对准机器人。 晶片从负载锁定到处理室，直至完成; 然后加载锁中的晶片被密封，加压并移回FOUP。 使用第二个加载锁和多个FOUP来增加吞吐量。

公开(公告)号：US5313848A

公开(公告)日：1994-05-24

申请号：US778777

申请日：1991-10-18

Applicant: Ernest M. Santin ,  William A. Tout ,  Peter M. Nunes ,  John W. Vanderpot ,  Donald W. Berrian

Inventor： Ernest M. Santin ,  William A. Tout ,  Peter M. Nunes ,  John W. Vanderpot ,  Donald W. Berrian

IPC: G01D1/04 ,  G01D1/12 ,  G01D1/14 ,  G01D1/18 ,  G01D9/00 ,  G01D21/00 ,  G01K1/02 ,  G01K7/22 ,  G01D1/00 ,  G01D1/10 ,  G01K7/00

CPC classification number: G01D1/04 ,  G01D1/12 ,  G01D1/14 ,  G01D9/005 ,  G01K1/022

Abstract: Apparatus for monitoring an externally applied parameter to selected products. The invention involves a housing enclosing a sensor, and a monitoring and output network. The sensor has a characteristic that varies in some predetermined manner with variation in the monitored parameter. The monitoring and output network involves a sensor which produces a signal representative of the monitored characteristic. Values associated with the signal are stored in a memory device for subsequent, selected retrieval.

Abstract translation: 用于监视所选产品的外部应用参数的装置。 本发明涉及包围传感器的壳体，以及监测和输出网络。 传感器具有随监视参数的变化以某种预定方式变化的特性。 监测和输出网络涉及产生代表监测特征的信号的传感器。 与信号相关联的值存储在存储器装置中，用于随后的选择检索。

公开(公告)号：US06777687B2

公开(公告)日：2004-08-17

申请号：US10153114

申请日：2002-05-21

Applicant: John W. Vanderpot ,  Donald W. Berrian ,  John D. Pollock

Inventor： John W. Vanderpot ,  Donald W. Berrian ,  John D. Pollock

IPC: H01J3720

CPC classification number: H01L21/68764 ,  H01J37/3171 ,  H01J2237/20 ,  H01L21/68

Abstract: A substrate positioning system is provided to facilitate the performing of certain processing on the substrate, such as ion implantation. The system comprises a linkage rotatably mounted to a base and an end effector member rotatably mounted to the linkage and configured for receiving a substrate. Through the synchronized rotation of the linkage about the base and the end effector member about the linkage, the system acts as a robotic unit to move the substrate to the desired location for performing processing thereon. In another aspect, the base is movable along an axis such that the system maintains a constant distance of travel for an ion beam incident on the substrate as the linkage and end effector member travel in a curved path.

Abstract translation: 提供衬底定位系统以便于在衬底上执行某些处理，例如离子注入。 该系统包括可旋转地安装到基座的连接件和可旋转地安装到连杆机构并构造成用于接收基板的端部执行器部件。 通过围绕连杆机构围绕底座和端部执行器部件的联动的同步旋转，该系统充当机器人单元以将基板移动到期望的位置以在其上进行处理。 在另一方面，基座可以沿轴线移动，使得当连接件和端部执行器部件在弯曲的路径中行进时，系统保持入射在基板上的离子束的恒定的行进距离。

公开(公告)号：US5984391A

公开(公告)日：1999-11-16

申请号：US883204

申请日：1997-06-26

Applicant: John W. Vanderpot ,  John D. Pollock

Inventor： John W. Vanderpot ,  John D. Pollock

IPC: H01L21/687 ,  B25J15/00 ,  B65G49/07

CPC classification number: H01L21/68707 ,  Y10S294/902 ,  Y10S414/135

Abstract: The invention provides wafer handling apparatus for use with a wafer handling mechanism of the type that supports and transports wafers through and during semiconductor processes. Typically, the wafer has a first surface for semiconductor processing and a second surface having a surface finish with microfeatures therein. The invention utilizes at least three prongs extending from the mechanism and arranged to support the wafer. A stylus tip--preferably made from diamond--resides at a distal end of each prong. Each tip has a point that is smaller than at least some of the microfeatures of the second surface of the wafer such that the interaction of the tips with the microfeatures resists lateral movement of the wafer relative to the tips when the wafer rests on the tips by the force of gravity. This interaction is sufficient to move the wafer without substantial contribution from the coefficient of friction between the tips and the wafer. The invention solves the problems of the prior art associated with outgassing by rubber pads and low coefficients of friction associated with quartz pads. Motors with feedback control adjust the speed at which the prongs interact with the wafers so as to prolong tip life.

Abstract translation: 本发明提供了晶片处理装置，其用于在半导体工艺期间和半导体工艺期间支撑和输送晶片的晶片处理机构。 通常，晶片具有用于半导体处理的第一表面和具有其中具有微特征的表面光洁度的第二表面。 本发明利用从机构延伸的至少三个尖头并且被布置成支撑晶片。 优选由钻石制成的触针尖位于每个插脚的远端。 每个尖端具有小于晶片的第二表面的至少一些微特征的点，使得当晶片搁置在尖端上时，尖端与微特征的相互作用抵抗晶片相对于尖端的横向移动， 重力。 这种相互作用足以移动晶片，而没有从尖端和晶片之间的摩擦系数的实质贡献。 本发明解决了与橡胶垫脱气相关的现有技术和与石英垫相关的低摩擦系数的问题。 具有反馈控制的电机调节插脚与晶片相互作用的速度，以延长端头寿命。

公开(公告)号：US5595784A

公开(公告)日：1997-01-21

申请号：US516790

申请日：1995-08-18

Applicant: Robert Kaim ,  John W. Vanderpot

Inventor： Robert Kaim ,  John W. Vanderpot

IPC: C23C16/14 ,  C23C16/34 ,  C23C16/42 ,  H01L21/768 ,  C23C16/00 ,  B05D3/06

CPC classification number: H01L21/76862 ,  C23C16/14 ,  C23C16/34 ,  C23C16/42 ,  H01L21/76841 ,  H01L21/76843

Abstract: A gaseous mixture of a titanium halide and silane is introduced to a plasma or thermal CVD reactor to induce a reaction such that a conformal and pure titanium film is deposited onto a semiconductor device within the reactor. The titanium halide has a chemical form of TiX.sub.4, where X is a halogen. Other gaseous combinations of the titanium halide, ammonia, hydrogen, a halogen and silane are subjected to plasma or thermal CVD to induce a reaction to deposit titanium silicide and titanium nitride films onto the semiconductor device. Successive CVD processes create bilayers of TiSi.sub.x /TiN or Ti/TiN, and/or trilayers of TiSi.sub.x /Ti/TiN onto the semiconductor device.

Abstract translation: 将钛卤化物和硅烷的气体混合物引入等离子体或热CVD反应器以引起反应，使得保形和纯钛膜沉积在反应器内的半导体器件上。 钛卤化物具有化学形式的TiX4，其中X是卤素。 将卤化钛，氨，氢，卤素和硅烷的其它气体组合进行等离子体或热CVD以引起将硅化钛和氮化钛膜沉积到半导体器件上的反应。 连续CVD工艺将TiSix / TiN或Ti / TiN的双层和/或TiSix / Ti / TiN的三层制造到半导体器件上。

公开(公告)号：US5565036A

公开(公告)日：1996-10-15

申请号：US183529

申请日：1994-01-19

Applicant: Han Westendorp ,  Hans Meiling ,  John W. Vanderpot ,  Donald Berrian

Inventor： Han Westendorp ,  Hans Meiling ,  John W. Vanderpot ,  Donald Berrian

IPC: H05H1/46 ,  C23C14/34 ,  C23C16/48 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/517 ,  C23F4/00 ,  H01J37/32 ,  C23C16/00

CPC classification number: H01J37/32082 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32009 ,  H01J37/32165

Abstract: The invention provides apparatus and methods for improving systems that expose samples to reactive plasmas, and more particularly for igniting plasma within a process module. The systems are of the type which have an electrode pair and a radiofrequency generator connected to one electrode. Gas is injected between the electrodes where it is ionized and transformed into a plasma. The invention includes (i) ignition means for ionizing gas, e.g., silane, between electrodes which are separated by a small gap of less than approximately one centimeter; and (ii) a radiofrequency energy generator that preferably operates at high frequencies, e.g., 60 MHz, to transform molecules into plasma. Several embodiments of ignition means are taught by the invention, including: an electron source, an ultraviolet source, a second radiofrequency energy generator, and radioactive sources, among others. A process module constructed according to the invention, using high frequency energy and small electrode separations, has a high rate of deposition and a high production yield.

Abstract translation: 本发明提供了用于改进将样品暴露于反应性等离子体的系统的装置和方法，更具体地说，用于在过程模块内点燃等离子体。 这些系统是具有连接到一个电极的电极对和射频发生器的类型。 在电极之间注入气体，将其电离并转化成等离子体。 本发明包括（i）用于将电极之间的气体（例如硅烷）电离的点火装置，其间隔开小于大约一厘米的小间隙; 和（ii）优选以高频（例如60MHz）操作以将分子转化成等离子体的射频能量发生器。 本发明教导了点火装置的几个实施例，包括：电子源，紫外线源，第二射频能量发生器和放射源。 根据本发明构造的使用高频能量和小电极分离的处理模块具有高的沉积速率和高的产量。

公开(公告)号：US07141809B2

公开(公告)日：2006-11-28

申请号：US11099062

申请日：2005-04-05

Applicant: John W. Vanderpot ,  John D. Pollock ,  Donald W. Berrian

Inventor： John W. Vanderpot ,  John D. Pollock ,  Donald W. Berrian

IPC: B65H1/00

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J2237/0216 ,  H01J2237/20228 ,  H01J2237/20292 ,  H01J2237/31703 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/68764 ,  H01L21/68792

Abstract: A method for reciprocally transporting a workpiece on a scan arm through an ion beam is provided, wherein the scan arm is operably coupled to a motor comprising a rotor and stator that are individually rotatable about a first axis. An electromagnetic force applied between the rotor and stator rotates the rotor about the first axis and translates the workpiece through the ion beam along a first scan path. A position of the workpiece is sensed and the electromagnetic force between the rotor and stator is controlled in order to reverse the direction of motion of the workpiece along the first scan path, and wherein the control is based, at least in part, on the sensed position of the workpiece. The stator further rotates about the first axis in reaction to the rotation of the rotor, particularly in the reversal of direction of motion of the workpiece, thus acting as a reaction mass to the rotation of one or more of the rotor, scan arm, and workpiece.

Abstract translation: 提供了一种用于通过离子束在扫描臂上往复运送工件的方法，其中扫描臂可操作地耦合到包括转子和定子的电动机，该转子和定子可以围绕第一轴线单独旋转。 施加在转子和定子之间的电磁力围绕第一轴线旋转转子，并使工件沿第一扫描路径平移离子束。 感测工件的位置，并且控制转子和定子之间的电磁力以便沿着第一扫描路径反转工件的运动方向，并且其中控制至少部分地基于感测的 工件位置。 定子进一步围绕第一轴线转动，以反应转子的旋转，特别是在反转工件的运动方向上，从而作为与转子，扫描臂和转子中的一个或多个的旋转反应的质量 工件。