中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

30 records (took 0.018 seconds)

    Beam stop and beam tuning methods
    1.
    发明授权
    Beam stop and beam tuning methods 有权
    光束停止和光束调谐方法

    公开(公告)号：US07579604B2

    公开(公告)日：2009-08-25

    申请号：US11445722

    申请日：2006-06-02

    Applicant: John W. Vanderpot ,  Yongzhang Huang

    Inventor： John W. Vanderpot ,  Yongzhang Huang

    IPC: G21K5/10 ,  H01J37/08

    CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

    Abstract: A system, method, and apparatus for mitigating contamination associated with ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and selectively travels through the mass analyzer to the end station, based on a position of a beam stop assembly. The beam stop assembly selectively prevents the ion beam from entering and/or exiting the mass analyzer, therein minimizing contamination associated with an unstable ion source during transition periods such as a start-up of the ion implantation system.

    Abstract translation: 提供了用于减轻与离子注入相关的污染的系统，方法和装置。 提供了一种位于离子源和终端之间的离子源，终端站和质量分析器，其中离子源由离子源形成，并且基于位置，选择性地通过质量分析器传送到终端站 光束挡块组件。 光束停止组件选择性地防止离子束进入和/或离开质量分析器，其中最小化在诸如离子注入系统的启动的过渡期间与不稳定离子源相关联的污染。

    Charged beam dump and particle attractor
    2.
    发明授权
    Charged beam dump and particle attractor 有权
    充电束流和吸引子

    公开(公告)号：US07547899B2

    公开(公告)日：2009-06-16

    申请号：US11445677

    申请日：2006-06-02

    Applicant: John W. Vanderpot ,  Yongzhang Huang

    Inventor： John W. Vanderpot ,  Yongzhang Huang

    IPC: G21K5/10 ,  H01J37/08

    CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

    Abstract: A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.

    Abstract translation: 提供了一种用于减少离子注入期间污染的系统，方法和装置。 提供了位于离子源和终端之间的离子源，端站和质量分析器，其中离子束由离子源形成并通过质量分析器传送到终端站。 包括粒子收集器，颗粒吸引子和屏蔽的离子束转储组件与质量分析器相关联，其中，所述粒子吸引子的电位可操作以吸引和约束所述颗粒收集器内的污染颗粒，并且其中所述屏蔽件可操作为 屏蔽质子分析仪内离子束电位的吸引子的电位。

    Beam tuning with automatic magnet pole rotation for ion implanters
    3.
    发明授权
    Beam tuning with automatic magnet pole rotation for ion implanters 有权
    用于离子注入机的自动磁极旋转的光束调谐

    公开(公告)号：US07476855B2

    公开(公告)日：2009-01-13

    申请号：US11523144

    申请日：2006-09-19

    Applicant: Yongzhang Huang

    Inventor： Yongzhang Huang

    IPC: H01J37/137 ,  H01J37/30 ,  H01J49/20 ,  H01J49/30 ,  H01J37/304

    CPC classification number: H01J49/30 ,  H01J37/026 ,  H01J37/05 ,  H01J37/21 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/152 ,  H01J2237/2485 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31701

    Abstract: An ion implantation apparatus, system, and method for controlling an ion beam, wherein a mass analyzer generally positioned between an ion source and an end station is configured to selectively control a path of a desired ion beam. The mass analyzer comprises one or more of an entrance pole mechanism positionable proximate to an entrance of the mass analyzer and an exit pole mechanism positionable proximate to an exit of the mass analyzer, wherein the position of the entrance pole mechanism and exit pole mechanism generally determines the path and focal point of the desired ion beam. A controller is configured to selectively position one or more of the entrance pole mechanism and exit pole mechanism, therein generally controlling the path of the desired ion beam at the exit of the mass analyzer, wherein the control may be based on one or more detected characteristics of the desired ion beam.

    Abstract translation: 用于控制离子束的离子注入装置，系统和方法，其中通常定位在离子源和终端站之间的质量分析器被配置为选择性地控制期望的离子束的路径。 质量分析器包括一个或多个可靠近质量分析器的入口定位的入口极机构和靠近质量分析器的出口定位的出口极机构，其中入口极机构和出口极机构的位置通常确定 所需离子束的路径和焦点。 控制器被配置为选择性地定位入口极机构和出口极机构中的一个或多个，其中通常控制质量分析器出口处的期望离子束的路径，其中控制可以基于一个或多个检测到的特性 的所需离子束。

    Beam tuning with automatic magnet pole rotation for ion implanters
    4.
    发明申请
    Beam tuning with automatic magnet pole rotation for ion implanters 有权
    用于离子注入机的自动磁极旋转的光束调谐

    公开(公告)号：US20080067435A1

    公开(公告)日：2008-03-20

    申请号：US11523144

    申请日：2006-09-19

    Applicant: Yongzhang Huang

    Inventor： Yongzhang Huang

    IPC: H01J37/317 ,  H01J49/20 ,  H01J49/30

    CPC classification number: H01J49/30 ,  H01J37/026 ,  H01J37/05 ,  H01J37/21 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/152 ,  H01J2237/2485 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31701

    Abstract: An ion implantation apparatus, system, and method for controlling an ion beam, wherein a mass analyzer generally positioned between an ion source and an end station is configured to selectively control a path of a desired ion beam. The mass analyzer comprises one or more of an entrance pole mechanism positionable proximate to an entrance of the mass analyzer and an exit pole mechanism positionable proximate to an exit of the mass analyzer, wherein the position of the entrance pole mechanism and exit pole mechanism generally determines the path and focal point of the desired ion beam. A controller is configured to selectively position one or more of the entrance pole mechanism and exit pole mechanism, therein generally controlling the path of the desired ion beam at the exit of the mass analyzer, wherein the control may be based on one or more detected characteristics of the desired ion beam.

    Abstract translation: 用于控制离子束的离子注入装置，系统和方法，其中通常定位在离子源和终端站之间的质量分析器被配置为选择性地控制期望的离子束的路径。 质量分析器包括一个或多个可靠近质量分析器的入口定位的入口极机构和靠近质量分析器的出口定位的出口极机构，其中入口极机构和出口极机构的位置通常确定 所需离子束的路径和焦点。 控制器被配置为选择性地定位入口极机构和出口极机构中的一个或多个，其中通常控制质量分析器出口处的期望离子束的路径，其中控制可以基于一个或多个检测到的特性 的所需离子束。

    Ion source arc chamber seal
    8.
    发明授权
    Ion source arc chamber seal 有权
    离子源电弧室密封

    公开(公告)号：US07655930B2

    公开(公告)日：2010-02-02

    申请号：US11689769

    申请日：2007-03-22

    Applicant: Yongzhang Huang ,  Neil K Colvin ,  Kevin J Hoyt

    Inventor： Yongzhang Huang ,  Neil K Colvin ,  Kevin J Hoyt

    IPC: H01J37/08 ,  H01J7/24

    CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0262 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/166

    Abstract: An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.

    Abstract translation: 用于产生离子流的示例性离子源具有至少部分地界定电弧室的电离区域的室主体。 电弧室主体与热丝电弧室壳体一起使用，其直接或间接地将阴极加热至足够的温度，以使电子流过电弧室的电离区域。 密封件具有陶瓷体，该陶瓷体具有沿着周向外唇缘邻接电弧室主体的外壁。 密封件还具有一个或多个径向内部通道，其由与外壁间隔开的一个或多个内壁限定。

    Method of reducing particle contamination for ion implanters
    9.
    发明授权
    Method of reducing particle contamination for ion implanters 有权
    降低离子注入机颗粒污染的方法

    公开(公告)号：US07566887B2

    公开(公告)日：2009-07-28

    申请号：US11648979

    申请日：2007-01-03

    Applicant: Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

    Inventor： Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

    IPC: G21K5/00

    CPC classification number: H01J37/248 ,  H01J37/045 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/0213 ,  H01J2237/0432 ,  H01J2237/08

    Abstract: The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.

    Abstract translation: 本发明涉及一种束控制电路和方法，用于通过降低离子束的占空比来最小化离子注入系统中的颗粒污染。 在一个实施例中，光束控制电路包括与电源和离子注入系统的离子源部分串联连接的高电压开关，其中开关可操作以中断或重新建立电源和电源之间的连接 离子源包括用于等离子体生产的电极。 光束控制电路还包括开关控制器，其可操作以通过在离子注入开始之前控制开关闭合并且在完成植入之后或在不需要光束的其他时间来控制离子束的占空因数， 从而最大程度地减少波束占空比和颗粒污染。 光束控制技术可以应用于晶片掺杂注入和占空因数降低。 高压开关的保护电路可以吸收反应性元件的能量并夹紧任何过电压。

    Hybrid magnetic/electrostatic deflector for ion implantation systems
    10.
    发明授权
    Hybrid magnetic/electrostatic deflector for ion implantation systems 有权
    用于离子注入系统的混合磁/静电偏转器

    公开(公告)号：US06881966B2

    公开(公告)日：2005-04-19

    申请号：US10461702

    申请日：2003-06-13

    Applicant: Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

    Inventor： Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

    IPC: H01J27/18 ,  H01J37/00 ,  H01J37/05 ,  H01J37/147 ,  H01J37/30 ,  H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/147 ,  H01J2237/057

    Abstract: A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.

    Abstract translation: 公开了用于离子束的磁偏转器，并且包括第一和第二线圈。 线圈分别位于梁的上方和下方，并沿着梁的宽度延伸。 电流通过线圈以产生它们之间的磁场，其大致垂直于梁的大致整个宽度的行进方向。 在本发明的另一方面，公开了一种在植入植入工件之前偏转光束的方法。 该方法包括确定与光束相关联的一个或多个属性，并且基于该确定选择性地激活磁偏转模块和静电偏转模块中的一个。

Patent Agency Ranking