摘要:
A display substrate includes an insulating substrate, a thin film transistor, a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode, a semiconductor pattern, a first electrode, and a second electrode. The control electrode is on the insulating substrate. The semiconductor pattern is on the control electrode. The first electrode is on the semiconductor pattern. The second electrode is spaced apart from the first electrode on the semiconductor pattern. The contact electrode includes a contact portion and an undercut portion. The contact portion is electrically connected to the second electrode to partially expose the semiconductor pattern. The undercut portion is electrically connected to the contact portion to cover the semiconductor pattern. The pixel electrode is electrically connected to the second electrode through the contact portion of the contact electrode.
摘要:
A thin film panel includes a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, a data line, including a source electrode, and a drain electrode formed on the gate insulating layer or the semiconductor layer, and a pixel electrode connected to the drain electrode, wherein at least one of the gate line and the data line and drain electrode includes a first conductive layer made of a molybdenum Mo-niobium Nb alloy and a second conductive layer made of a copper Cu-containing metal.
摘要:
An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.
摘要:
A method of reforming a metal pattern for improving the productivity and reliability of a manufacturing process, an array substrate and a method of manufacturing the array substrate are disclosed. In the method, a first wiring pattern is formed on an insulation substrate. The first wiring pattern is removed. A second wiring pattern is formed on an embossed pattern by using the embossed pattern as an alignment mask. The embossed pattern is defined by a recess formed on a surface of the insulation substrate. Accordingly, the insulation substrate having the recess formed thereon may not be discarded, and may be reused in forming the first wiring pattern. In addition, the embossed pattern defined by the recess is used as an alignment mask, so that the alignment reliability of a metal pattern may be improved.
摘要:
A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor.
摘要:
In the manufacturing process of the thin film transistor array panel according to an exemplary embodiment of the present invention using three masks, the metal oxide semiconductor or the transparent conductive oxide is used, thereby executing an efficient lift-off process.
摘要:
A display substrate includes; a base substrate, a deformation preventing layer disposed on a lower surface of the base substrate, wherein the deformation preventing layer applies a force to the base substrate to prevent the base substrate from bending, a gate line disposed on an upper surface of the base substrate, a data line disposed on the base substrate, and a pixel electrode disposed on the base substrate.
摘要:
An etchant for a metal is described. In one example, the etchant includes ammonium persulfate ((NH4)2S2O8), an azole compound and water. The etchant does not include hydrogen peroxide. Thus, the etchant may etch a metal layer including copper so that an etched copper layer has a tapered profile. Furthermore, the etchant may have a high stability to maintain etching ability for a longer time. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.
摘要翻译:描述了金属的蚀刻剂。 在一个实例中,蚀刻剂包括过硫酸铵((NH 3)2 S 2 O 2 O 8), 唑化合物和水。 蚀刻剂不包括过氧化氢。 因此,蚀刻剂可以蚀刻包括铜的金属层,使得蚀刻的铜层具有锥形轮廓。 此外,蚀刻剂可能具有高的稳定性,以保持较长时间的蚀刻能力。 因此,可以提高制造裕度,从而可以降低制造成本。
摘要:
Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.
摘要:
A composition for removing a photoresist pattern includes about 5 percent by weight to about 20 percent by weight of an aminoethoxy ethanol, about 2 percent by weight to about 10 percent by weight of a polyalkylene oxide, about 10 percent by weight to about 30 percent by weight of a glycol ether compound, and a remainder of an aprotic polar solvent including a nitrogen. Thus, the photoresist pattern can be easily removed from a substrate, thereby improving the removing ability of the composition. In addition, a residual amount of the photoresist pattern may be minimized, thereby improving the reliability of removing the photoresist pattern.