公开(公告)号：US20130219246A1

公开(公告)日：2013-08-22

申请号：US13859976

申请日：2013-04-10

Applicant: Kwan-Ho Kim ,  Jong-In Kim ,  Young-Wook Jang ,  Hee-Dong Shin ,  Bong-Chun Kang ,  Jong-Jin Lee

Inventor： Kwan-Ho Kim ,  Jong-In Kim ,  Young-Wook Jang ,  Hee-Dong Shin ,  Bong-Chun Kang ,  Jong-Jin Lee

IPC: G06F11/10

CPC classification number: G06F11/10 ,  G06F11/1008 ,  H03M13/37 ,  H03M13/3707

Abstract: A method and apparatus for detecting a free page of a memory device, and a method and apparatus for decoding an error correction code by using the method and apparatus for detecting a free page are provided. Free page data read from the memory is converted into a converted codeword for inclusion as an element of an error correction code field. The converted codeword is compared to an initially set target codeword to detect an amount of non-identical bits. A page read from the memory is determined to be a free page when the amount of non-identical bits is equal to or less than an initially set threshold value.

Abstract translation: 提供一种用于检测存储装置的自由页面的方法和装置，以及通过使用用于检测空闲页面的方法和装置来解码纠错码的方法和装置。 从存储器读取的自由页面数据被转换为转换的码字，以作为纠错码字段的元素。 将转换的码字与初始设置的目标码字进行比较，以检测不相同比特的量。 当不相同比特量等于或小于初始设置的阈值时，从存储器读取的页面被确定为空闲页面。

公开(公告)号：US20100012364A1

公开(公告)日：2010-01-21

申请号：US12359416

申请日：2009-01-26

Applicant: Byoung-Chan KIM ,  Young-Hwan Shin ,  Jong-Jin Lee

Inventor： Byoung-Chan KIM ,  Young-Hwan Shin ,  Jong-Jin Lee

IPC: H05K1/16 ,  H05K3/36

CPC classification number: H01L24/91 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/16 ,  H01L2224/24227 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/18162 ,  H05K1/187 ,  H05K3/205 ,  H05K3/4602 ,  H05K2201/10515 ,  H05K2201/10674 ,  H05K2203/0376 ,  H05K2203/1469 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49133 ,  Y10T29/49155 ,  Y10T29/49165 ,  H01L2224/82 ,  H01L2224/0401

Abstract: An electronic component embedded printed circuit board and a method for manufacturing the same are disclosed. The method includes: providing a first carrier having a first circuit pattern formed on one surface thereof; providing a second carrier having a second circuit pattern formed on one surface thereof; flip-chip bonding an electronic component to the first circuit pattern; stacking one side of an insulator on one side of the first carrier to cover the electronic component; compressing the second carrier having the second circuit pattern formed on one surface thereof on an other side of the insulator; and removing the first carrier and the second carrier. The method can improve the degree of conformation for an electrical component by embedding the electrical component using a flip-chip bonding method and can improve the yield by simplifying the production process.

Abstract translation: 公开了电子部件嵌入式印刷电路板及其制造方法。 该方法包括：提供具有形成在其一个表面上的第一电路图案的第一载体; 提供具有形成在其一个表面上的第二电路图案的第二载体; 将电子部件倒装成第一电路图案; 将绝缘体的一侧堆叠在第一载体的一侧以覆盖电子部件; 在绝缘体的另一侧上压制在其一个表面上形成有第二电路图案的第二载体; 以及去除所述第一载体和所述第二载体。 该方法可以通过使用倒装芯片接合方法嵌入电子部件来提高电气部件的构造程度，并且可以通过简化制造工艺来提高成品率。

公开(公告)号：US07560681B2

公开(公告)日：2009-07-14

申请号：US11797561

申请日：2007-05-04

Applicant: Kyoung-Sik Moon ,  Bum-Suk Kim ,  Jong-Jin Lee ,  Yun-Ho Jang

Inventor： Kyoung-Sik Moon ,  Bum-Suk Kim ,  Jong-Jin Lee ,  Yun-Ho Jang

IPC: H01L27/00 ,  H01L31/18 ,  H01J40/14

CPC classification number: G02B3/08 ,  G02B3/0056 ,  G02B13/22 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14685 ,  H01L31/02165

Abstract: An image sensor may include a plurality of photodiodes for performing a photo-electric conversion and a plurality of microlenses. Each of the microlenses is formed over one of the photodiodes. The image sensor may further include a vertical light generating portion formed over the microlenses and configured to refract each of plurality of incident light rays such that the light rays are vertically incident on the microlenses.

Abstract translation: 图像传感器可以包括用于执行光电转换和多个微透镜的多个光电二极管。 每个微透镜形成在一个光电二极管上。 图像传感器还可以包括形成在微透镜上的垂直光产生部分，并被配置为折射多个入射光线中的每一个，使得光线垂直入射在微透镜上。

公开(公告)号：US20080105927A1

公开(公告)日：2008-05-08

申请号：US11711117

申请日：2007-02-27

Applicant: Young-Joon Ahn ,  Jong-Jin Lee

Inventor： Young-Joon Ahn ,  Jong-Jin Lee

IPC: H01L29/94 ,  H01L21/336

CPC classification number: H01L27/11521 ,  H01L21/764 ,  H01L27/115 ,  H01L29/40114

Abstract: The memory device includes upper gate structures and lower gate structures formed on an active region of a substrate, and an insulation layer. Each of the upper gate structures may have a blocking layer pattern and a control gate electrode. Each of the lower gate structures may have a tunnel insulation layer pattern and a floating gate electrode. The floating gate electrode may include a lower portion that is narrower than an upper portion contacting with the upper gate structure. The insulation layer may cover gate structures formed of the lower and upper gate structures, and may include air gaps between adjacent gate structures.

Abstract translation: 存储器件包括形成在衬底的有源区上的上栅极结构和下栅极结构以及绝缘层。 每个上部栅极结构可以具有阻挡层图案和控制栅电极。 每个下栅极结构可以具有隧道绝缘层图案和浮栅电极。 浮栅电极可以包括比与上栅极结构接触的上部更窄的下部。 绝缘层可以覆盖由下部和上部栅极结构形成的栅极结构，并且可以包括相邻栅极结构之间的气隙。

公开(公告)号：US20080067580A1

公开(公告)日：2008-03-20

申请号：US11710488

申请日：2007-02-26

Applicant: Young-Joon Ahn ,  Suk-Pil Kim ,  Jong-Jin Lee

Inventor： Young-Joon Ahn ,  Suk-Pil Kim ,  Jong-Jin Lee

IPC: H01L29/792 ,  H01L21/336

CPC classification number: H01L27/11568 ,  H01L21/28282 ,  H01L27/115 ,  H01L29/4991 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/792

Abstract: In a memory device and a method of manufacturing the memory device, a pair of channel layers included in the memory device may be formed on a sidewall of the sacrificial single crystalline layer pattern located on a protrusion of a semiconductor substrate. Accordingly, an etch damage may be reduced at the channel layer. The sacrificial single crystalline layer pattern may be removed to generate a void between the pair of the channel layers. As a result, a generation of a coupling effect may be reduced between the channel layers.

Abstract translation: 在存储器件和存储器件的制造方法中，包括在存储器件中的一对沟道层可以形成在位于半导体衬底的突起上的牺牲单晶层图案的侧壁上。 因此，在沟道层可能会减少蚀刻损伤。 可以去除牺牲单晶层图案以在一对通道层之间产生空隙。 结果，可以在沟道层之间产生耦合效应。

公开(公告)号：US20070210359A1

公开(公告)日：2007-09-13

申请号：US11682550

申请日：2007-03-06

Applicant: Jong-Jin Lee ,  Yo-Han Sun ,  Tae-Seok Oh ,  Sung-Jae Joo ,  Bum-Suk Kim ,  Yun-Ho Jang ,  Sae-Young Kim ,  Keun-Chan Yuk

Inventor： Jong-Jin Lee ,  Yo-Han Sun ,  Tae-Seok Oh ,  Sung-Jae Joo ,  Bum-Suk Kim ,  Yun-Ho Jang ,  Sae-Young Kim ,  Keun-Chan Yuk

IPC: H01L31/113

CPC classification number: H01L27/14601 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert optical charges into an electrical signal. The second type semiconductor layer is supplied with a drain voltage to have a potential different from that of the first semiconductor layer, and the first type well controls a power source voltage (VDD) using the drain voltage.

Abstract translation: 图像传感器包括第一类型半导体层，第二类型半导体层和第一类型阱。 第一类型半导体层形成在半导体衬底上，并且包括多个像素，其接收外部光并将光电荷转换成电信号。 第二类型半导体层被提供有与第一半导体层的电位不同的漏极电压，并且第一类型阱使用漏极电压来控制电源电压（VDD）。

公开(公告)号：US08593550B2

公开(公告)日：2013-11-26

申请号：US12313350

申请日：2008-11-19

Applicant: Jong-Jin Lee ,  Ju-Hyun Ko ,  Jung-Chak Ahn

Inventor： Jong-Jin Lee ,  Ju-Hyun Ko ,  Jung-Chak Ahn

IPC: H04N5/335

CPC classification number: H04N5/361 ,  H01L27/14656 ,  H04N5/3594

Abstract: For driving an image sensor having a pixel with a transfer gate formed between a photo-detector and a floating diffusion region, a noise-reducing voltage is applied on the transfer gate during a first period of an integration mode. A blooming current voltage is applied on the transfer gate during a second period of the integration mode. A read voltage is applied on the transfer gate during a read mode after the integration mode. The read voltage has a higher magnitude than the blooming current voltage. With application of the noise-reducing voltage, noise is reduced and a dynamic range is extended for the image sensor.

Abstract translation: 为了驱动具有形成在光电检测器和浮动扩散区域之间的传输门的像素的图像传感器，在积分模式的第一周期期间，在传输门上施加降噪电压。 在积分模式的第二周期期间，在传输门上施加开花电流电压。 在积分模式之后的读取模式下，在传输门上施加读取电压。 读取电压的幅度比起霜电流电压高。 通过应用降噪电压，噪声降低，图像传感器的动态范围扩大。

公开(公告)号：US20120194512A1

公开(公告)日：2012-08-02

申请号：US13348198

申请日：2012-01-11

Applicant: Kyoung-Man Kim ,  Jong-Ho Roh ,  Jong-Jin Lee

Inventor： Kyoung-Man Kim ,  Jong-Ho Roh ,  Jong-Jin Lee

IPC: G06T15/00

CPC classification number: G06T15/503 ,  H04N13/161 ,  H04N13/305 ,  H04N13/31 ,  H04N13/324 ,  H04N13/337 ,  H04N13/341 ,  H04N13/398

Abstract: A display controller can include a blending coefficient storing unit and an image mixing unit. The blending coefficient storing unit can store blending coefficients. The image mixing unit can receive left-eye image data and right-eye image data, and generate three-dimensional image data by performing a blending operation on the left-eye image data and the right-eye image data using the blending coefficients stored in the blending coefficient storing unit.

Abstract translation: 显示控制器可以包括混合系数存储单元和图像混合单元。 混合系数存储单元可以存储混合系数。 图像混合单元可以接收左眼图像数据和右眼图像数据，并且通过使用存储在左眼图像数据和右眼图像数据中的混合系数对左眼图像数据和右眼图像数据执行混合操作来生成三维图像数据 混合系数存储单元。

公开(公告)号：US20100147575A1

公开(公告)日：2010-06-17

申请号：US12614057

申请日：2009-11-06

Applicant: Han-Ul Lee ,  Young-Hwan Shin ,  Jong-Jin Lee

Inventor： Han-Ul Lee ,  Young-Hwan Shin ,  Jong-Jin Lee

IPC: H05K1/11 ,  C25D5/02

CPC classification number: H05K1/119 ,  H05K3/0038 ,  H05K3/427 ,  H05K2201/09563 ,  H05K2201/09827 ,  H05K2203/1572

Abstract: A printed circuit board and a method of manufacturing the printed circuit board are disclosed. The method of manufacturing a printed circuit board can include: processing a first hole, which has a tapered shape, in one side of a substrate by using a laser drill; processing a second hole, which has a tapered shape and which connects with the first hole, in the other side of the substrate by using a laser drill in a position corresponding to that of the first hole; and forming a conductive portion, which electrically connects both sides of the substrate through the first hole and the second hole, by performing plating. This method may be used for providing reliable interlayer connections.

Abstract translation: 公开了印刷电路板和印刷电路板的制造方法。 制造印刷电路板的方法可以包括：通过使用激光钻孔在基板的一侧处理具有锥形形状的第一孔; 通过使用激光钻头处理与第一孔相对应的位置，在基板的另一侧处理具有锥形形状并与第一孔连接的第二孔; 并且通过执行电镀形成导电部分，其通过第一孔和第二孔电连接基板的两侧。 该方法可用于提供可靠的层间连接。

公开(公告)号：US07595519B2

公开(公告)日：2009-09-29

申请号：US11682550

申请日：2007-03-06

Applicant: Jong-Jin Lee ,  Yo-Han Sun ,  Tae-Seok Oh ,  Sung-Jae Joo ,  Bum-Suk Kim ,  Yun-Ho Jang ,  Sae-Young Kim ,  Keun-Chan Yuk

Inventor： Jong-Jin Lee ,  Yo-Han Sun ,  Tae-Seok Oh ,  Sung-Jae Joo ,  Bum-Suk Kim ,  Yun-Ho Jang ,  Sae-Young Kim ,  Keun-Chan Yuk

IPC: H01L31/062

CPC classification number: H01L27/14601 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert optical charges into an electrical signal. The second type semiconductor layer is supplied with a drain voltage to have a potential different from that of the first semiconductor layer, and the first type well controls a power source voltage (VDD) using the drain voltage.

Abstract translation: 图像传感器包括第一类型半导体层，第二类型半导体层和第一类型阱。 第一类型半导体层形成在半导体衬底上，并且包括多个像素，其接收外部光并将光电荷转换成电信号。 第二类型半导体层被提供有与第一半导体层的电位不同的漏极电压，并且第一类型阱使用漏极电压来控制电源电压（VDD）。