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公开(公告)号：US5019233A
公开(公告)日：1991-05-28
申请号：US434605
申请日：1989-11-08
IPC分类号： H01L21/00 , H01L21/677 , H01L21/687
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67201 , H01L21/67751 , H01L21/68707
摘要： A system (10) for the vacuum processing of substrates such as semiconductor wafers which includes a central handling chamber (14), a number of separately pumped and randomly accessed process chambers (16-19), and dual load lock chambers (22) which communicate with the central handling chamber. This configuration permits one batch of substrates to be subjected to load lock evacuation while a second batch, having been previously evacuated, is transferred one at a time to selected process chambers. Substrate transfer from the load locks to the central handling chamber is by means of elevators (42) and by means of a handling assembly (24) which undergoes and Z motion only, with final transfer from the central handling chamber to the process chambers being accomplished by pivoting platen assemblies (66).
摘要翻译： 一种用于真空处理诸如半导体晶片的衬底的系统（10），其包括中央处理室（14），多个单独泵送和随机存取的处理室（16-19）和双负载锁定室（22），所述系统 与中央处理室通信。 这种配置允许一批衬底经受负载锁排空，而先前已被抽空的第二批次被一次一个地转移到选定的处理室。 从装载锁到中央处理室的基板转移是借助于电梯（42）和借助于处理组件（24）而进行的，并且只有Z运动才能从中央处理室到处理室的最终传送被完成 通过枢转压板组件（66）。
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公开(公告)号：US20120168640A1
公开(公告)日：2012-07-05
申请号：US12983710
申请日：2011-01-03
IPC分类号： H01L21/425 , G01N23/00 , H01L21/683
CPC分类号： H01L21/6831 , H01L21/67109
摘要： An electrostatic clamp includes a heating block for heating a substrate, the heating block having a first surface disposed toward the substrate and a second surface opposite the first surface. A base is arranged to adjoin at least a portion of the second surface of the heating block. The adjoined base and heating block may mutually define an inner gap between a first portion of the heating block and the base. An outer gap is arranged concentric with the inner gap between a second portion of the heating block and the base, the inner and outer gaps being isolated from one another by a first sealing surface formed between the second surface of the heating block and the base.
摘要翻译： 静电夹具包括用于加热衬底的加热块，加热块具有朝向衬底设置的第一表面和与第一表面相对的第二表面。 基座被布置成邻接加热块的第二表面的至少一部分。 邻接的基座和加热块可以相互限定加热块的第一部分和基座之间的内部间隙。 外部间隙与加热块的第二部分和基座之间的内部间隙同心地布置，内部和外部间隙通过形成在加热块的第二表面和基座之间的第一密封表面彼此隔离。
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公开(公告)号：US08669540B2
公开(公告)日：2014-03-11
申请号：US12983710
申请日：2011-01-03
IPC分类号： H01J37/08
CPC分类号： H01L21/6831 , H01L21/67109
摘要： An electrostatic clamp includes a heating block for heating a substrate, the heating block having a first surface disposed toward the substrate and a second surface opposite the first surface. A base is arranged to adjoin at least a portion of the second surface of the heating block. The adjoined base and heating block may mutually define an inner gap between a first portion of the heating block and the base. An outer gap is arranged concentric with the inner gap between a second portion of the heating block and the base, the inner and outer gaps being isolated from one another by a first sealing surface formed between the second surface of the heating block and the base.
摘要翻译： 静电夹具包括用于加热衬底的加热块，加热块具有朝向衬底设置的第一表面和与第一表面相对的第二表面。 基座被布置成邻接加热块的第二表面的至少一部分。 邻接的基座和加热块可以相互限定加热块的第一部分和基座之间的内部间隙。 外部间隙与加热块的第二部分和基座之间的内部间隙同心地布置，内部和外部间隙通过形成在加热块的第二表面和基座之间的第一密封表面彼此隔离。
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公开(公告)号：US08319196B2
公开(公告)日：2012-11-27
申请号：US13099203
申请日：2011-05-02
申请人： Jonathan G. England , Steven R. Walther , Richard S. Muka , Julian G. Blake , Paul J. Murphy , Reuel B. Liebert
发明人： Jonathan G. England , Steven R. Walther , Richard S. Muka , Julian G. Blake , Paul J. Murphy , Reuel B. Liebert
IPC分类号： H01J37/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译： 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 设备可以包括位于离子注入机内的端站附近的预冷站; 所述预冷站内的冷却机构被配置为将晶片从环境温度冷却到小于环境温度的预定范围; 耦合到预冷站和终端站的加载组件; 以及与加载组件和冷却机构通信的控制器，用于将晶片加载到预冷站中，将晶片在任何离子注入晶片之前将晶片冷却至预定温度范围，并将冷却的晶片装载到最后 冷却晶片经历离子注入工艺的工位。
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公开(公告)号：US09093104B2
公开(公告)日：2015-07-28
申请号：US13342762
申请日：2012-01-03
CPC分类号： G11B5/855
摘要： A novel technique for manufacturing bit patterned media is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for manufacturing bit pattern media. The technique, which may be realized as a method comprising: forming a non-catalysis region on a first portion of a catalysis layer; forming a non-magnetic separator on the non-catalysis region; and forming a magnetic active region on a second portion of the catalysis layer adjacent to the first portion of the catalysis layer.
摘要翻译： 公开了一种用于制造位图案化介质的新型技术。 在一个特定的示例性实施例中，该技术可以被实现为用于制造钻头图案介质的方法。 该技术可以被实现为一种方法，包括：在催化层的第一部分上形成非催化区; 在非催化区上形成非磁性分离器; 以及在催化层的与催化层的第一部分相邻的第二部分上形成磁性活性区域。
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公开(公告)号：US08466039B2
公开(公告)日：2013-06-18
申请号：US13399637
申请日：2012-02-17
申请人： Deepak A. Ramappa , Julian G. Blake
发明人： Deepak A. Ramappa , Julian G. Blake
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method of cleaving a substrate is disclosed. A species, such as hydrogen or helium, is implanted into a substrate to form a layer of microbubbles. The substrate is then annealed a pressure greater than atmosphere. This annealing may be performed in the presence of the species that was implanted. This diffuses the species into the substrate. The substrate is then cleaved along the layer of microbubbles. Other steps to form an oxide layer or to bond to a handle also may be included.
摘要翻译： 公开了一种切割基板的方法。 将诸如氢或氦的物质植入衬底中以形成微泡层。 然后将衬底退火，压力大于大气压。 该退火可以在植入物种的存在下进行。 这将物种扩散到基质中。 然后沿着微泡层切割底物。 可以包括形成氧化物层或结合到手柄的其它步骤。
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公开(公告)号：US08329260B2
公开(公告)日：2012-12-11
申请号：US12181516
申请日：2008-07-29
申请人： Julian G. Blake , Paul J. Murphy
发明人： Julian G. Blake , Paul J. Murphy
CPC分类号： H01L21/76254 , H01J2237/2001 , H01J2237/31701
摘要： A substrate is implanted with a species to form a layer of microbubbles in the substrate. The species may be hydrogen or helium in some embodiments. The size at which the microbubbles are stable within the substrate is controlled. In one example, this is by cooling the substrate. In one embodiment, the substrate is cooled to approximately between −150° C. and 30° C. This cooling also may reduce diffusion of the species in the substrate and will reduce surface roughness when the substrate is cleaved along the layer of microbubbles.
摘要翻译： 植入衬底以在衬底中形成微泡层。 在一些实施方案中，该物质可以是氢或氦。 微泡在基底内稳定的尺寸受到控制。 在一个实例中，这是通过冷却衬底。 在一个实施方案中，将基底冷却至约-150℃至30℃。该冷却还可以减少物质在基底中的扩散，并且当沿着微泡层切割基底时将降低表面粗糙度。
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公开(公告)号：US20120280442A1
公开(公告)日：2012-11-08
申请号：US13101280
申请日：2011-05-05
申请人： Richard J. Hertel , Julian G. Blake , Edward D. MacIntosh , Alexander C. Kontos , Frank Sinclair , Christopher A. Rowland , Mayur Jagtap , Sankar Ganesh Kolappan
发明人： Richard J. Hertel , Julian G. Blake , Edward D. MacIntosh , Alexander C. Kontos , Frank Sinclair , Christopher A. Rowland , Mayur Jagtap , Sankar Ganesh Kolappan
CPC分类号： H01L21/68771 , G11B23/0021 , G11B23/0317 , G11B23/0327
摘要： A media carrier, adapted to hold a plurality of pieces of magnetic media, is disclosed. This media carrier can be placed on the workpiece support, or platen, allowing the magnetic media to be processed. In some embodiments, the media carrier is designed such that only one side of the magnetic media is exposed, requiring a robot or other equipment to invert each piece of media in the carrier to process the second side. In other embodiments, the media carrier is designed such that both sides of the magnetic media are exposed. In this scenario, the media carrier is inverted on the platen to allow processing of the second side.
摘要翻译： 公开了适于容纳多个磁性介质的介质载体。 该介质载体可以放置在工件支撑件或压板上，允许磁性介质被处理。 在一些实施例中，介质载体被设计成使得只有磁性介质的一侧被暴露，需要机器人或其他设备来反转载体中的每个介质以处理第二侧。 在其他实施例中，介质载体被设计成使得磁性介质的两侧都被暴露。 在这种情况下，媒体载体在压板上反转，以允许处理第二面。
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公开(公告)号：US06794662B1
公开(公告)日：2004-09-21
申请号：US10680829
申请日：2003-10-07
IPC分类号： H01J3720
CPC分类号： H01L21/68707 , H01J2237/20 , H01J2237/31701
摘要： Wafer-holding structures formed from thermosetting resins are disclosed for use in semiconductor processing including, for example, SIMOX wafer processing. In one embodiment a pin is disclosed that is adapted to receive a wafer edge, and is coupled with a wafer holder assembly. The pin can be filled with a conductive material to provide an electrical pathway between the wafer and the wafer holder assembly, which can be coupled to a ground. This arrangement provides a conductive path for inhibiting electrical discharges from the wafer during the ion implantation process. The pin exhibits thermal isolation characteristics and sufficient hardness so as to not effect localized thermal dissipation of the wafer, yet is sufficiently soft so as to not mark or otherwise damage the wafer.
摘要翻译： 公开了由热固性树脂形成的晶片保持结构用于半导体处理，包括例如SIMOX晶片处理。 在一个实施例中，公开了适于接收晶片边缘并且与晶片保持器组件耦合的销。 引脚可以填充导电材料，以在晶片和晶片保持器组件之间提供可以耦合到地面的电路径。 这种布置提供用于在离子注入过程期间抑制来自晶片的放电的导电路径。 针具有热隔离特性和足够的硬度，从而不会影响晶片的局部散热，但是其足够柔软以便不会对晶片造成损伤或以其它方式损坏晶片。
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公开(公告)号：US5811823A
公开(公告)日：1998-09-22
申请号：US757726
申请日：1996-11-26
IPC分类号： H01J37/04 , C23C14/48 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/30 , H01J37/304 , H01J37/317 , H01L21/00 , H01L21/265 , H01L21/677 , H01L21/683
CPC分类号： H01L21/67109 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/3002 , H01J37/3007 , H01J37/304 , H01J37/3171 , H01L21/67069 , H01L21/67739 , H01L21/67748 , H01L21/67751 , H01L21/67778 , H01L21/6838 , H01J2237/022 , H01J2237/083 , H01J2237/184 , H01J2237/2001 , H01J2237/2007 , H01J2237/20228 , H01J2237/204 , H01J2237/31701 , H01J2237/31705
摘要： A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.
摘要翻译： 快速有效地处理大量平板显示器的高通量离子注入系统。 离子注入系统具有离子源，电极组件，安装工件的平台和离子束测量结构。 与电极组件结合的离子源形成带状束形状的离子束。 离子束的形成和定向使得离子束的第一部分处理工件，而离子束的第二部分由束测量结构同时测量。 控制器从离子束参数获取束测量结构的数据，然后根据数据产生离子注入系统的控制信号。
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