公开(公告)号：US08674886B2

公开(公告)日：2014-03-18

申请号：US13213219

申请日：2011-08-19

申请人： Junichi Ohno ,  Aiko Yoshida

发明人： Junichi Ohno ,  Aiko Yoshida

IPC分类号： H01Q1/24

CPC分类号： H01Q1/243 ,  H01Q3/00

摘要： A mobile terminal including an antenna device including an antenna element and a first non-feeding element, a radio-frequency unit that receives a signal from the antenna element, first and second matching circuits connected to the antenna element, a first switch that selectively connects one of the first and second matching circuits to the radio-frequency unit, a second switch that selectively grounds the first non-feeding element, an attitude-detection unit that detects an attitude of the mobile terminal, and a control unit that controls the first and second switches based on an output of the attitude-detection unit.

摘要翻译： 一种移动终端，包括天线装置，包括天线元件和第一非馈送元件，从天线元件接收信号的射频单元，连接到天线元件的第一和第二匹配电路，选择性地连接 射频单元的第一和第二匹配电路之一，选择性地接地第一非馈送元件的第二开关，检测移动终端的姿态的姿态检测单元，以及控制第一 以及基于姿态检测单元的输出的第二开关。

公开(公告)号：US4507846A

公开(公告)日：1985-04-02

申请号：US543971

申请日：1983-10-20

申请人： Junichi Ohno

发明人： Junichi Ohno

IPC分类号： H01L27/08 ,  H01L21/86 ,  H01L29/78 ,  H01L29/786 ,  H01L21/265

CPC分类号： H01L21/86

摘要： Gate electrodes for respective n channel and p channel transistors are disposed on a semiconductive layer over an oxide layer. A portion of the semiconductive layer existing between the gate electrodes is removed so that the thickness of the semiconductive layer between the gate electrodes is less than that of the semiconductive layer under the gate electrode.

摘要翻译： 用于相应n沟道和p沟道晶体管的栅电极设置在氧化物层上的半导体层上。 存在于栅电极之间的半导体层的一部分被去除，使得栅电极之间的半导体层的厚度小于栅极下的半导体层的厚度。

公开(公告)号：US5046927A

公开(公告)日：1991-09-10

申请号：US518655

申请日：1990-05-03

申请人： Junichi Ohno ,  Chuichi Kawamura ,  Kazuya Kimura

发明人： Junichi Ohno ,  Chuichi Kawamura ,  Kazuya Kimura

IPC分类号： F04B39/00 ,  F04B27/10 ,  F04B27/14 ,  F04B27/18 ,  F04B49/06

CPC分类号： F04B27/1804 ,  F04B27/1036 ,  F04B49/06 ,  F04B2027/1813 ,  F04B2027/1827 ,  F04B2027/1854 ,  F04B2027/1895 ,  F04B2201/12041

摘要： A variable capacity wobble plate type compressor having a non-rotatory wobble plate supported on a magnetic material support member to non-rotatively wobble to move compressing pistons in cylinder bores, a steel drive shaft driven by a drive source via a solenoid-operated clutch and causing the non-rotative wobble of the wobble plate at a given angle of inclination that is changed to vary the capacity of the compressor, and a capacity detecting unit provided with a permanent magnet attached to an outer periphery of the wobble plate, a magnetic sensor fixedly attached to the crankcase of the outer casing, for sensing an approach and departure of the permanent magnet of the wobble plate. The magnetic sensor generates electric signals indicating the approach and departure of the permanent magnet of the wobble plate, and a binary circuit electrically connected to the magnetic sensor converts the electric signals of the magnetic sensor into electric binary signals by which the capacity of the compressor is determined. The capacity detecting unit is also provided with an arrangement wherein a magnetic flux delivered from the permanent magnet flows in a direction opposite to that of a magnetic flux leaking from the solenoid-operated clutch through the drive shaft and the support member to prevent erroneous electric binary signals when the permanent magnet attached to the wobble plate is close to the magnetic sensor.

摘要翻译： 一种可变容量摇摆板式压缩机，其具有支撑在磁性材料支撑构件上的非旋转摆动板，以不旋转地摆动以在气缸孔中压缩活塞，由驱动源通过电磁离合器驱动的钢驱动轴， 导致摆动板的非旋转摆动在给定的倾斜角度改变以改变压缩机的容量，并且容量检测单元设置有安装在摆盘的外周的永磁体，磁传感器 固定地附接到外壳的曲轴箱，用于感测摆盘的永磁体的接近和离开。 磁传感器产生指示摆动板的永久磁铁的接近和离开的电信号，并且电连接到磁传感器的二进制电路将磁传感器的电信号转换成电二进制信号，通过该二进制信号将压缩机的容量 决心。 容量检测单元还具有这样一种装置，其中从永磁体输送的磁通量通过驱动轴和支撑构件沿与从电磁离合器泄漏的磁通相反的方向流动，以防止错误的电二进制 附着在摆盘上的永磁体靠近磁传感器时的信号。

公开(公告)号：US5018366A

公开(公告)日：1991-05-28

申请号：US306342

申请日：1989-02-03

申请人： Hiroshi Tanaka ,  Chuichi Kawamura ,  Junichi Ohno

发明人： Hiroshi Tanaka ,  Chuichi Kawamura ,  Junichi Ohno

IPC分类号： F04B27/08 ,  F04B27/18 ,  F04B49/06 ,  F16K31/06

CPC分类号： F04B27/1804 ,  F04B49/06 ,  F04B2027/1813 ,  F04B2027/1827 ,  F04B2027/1831 ,  F04B2027/1854

摘要： A control circuit unit for controlling the energization of a solenoid of a solenoid-operated capacity control unit incorporated in a a variable capacity compressor, typically, a variable capacity wobble plate type refrigerant compressor for a car air-conditioner, having a switching unit for establishing an electric conduction of the energizing circuit of the solenoid when the solenoid-operated valve is actuated for changing the compressor capacity, and an electric energizing voltage control circuit used to apply a high electric starting voltage to the solenoid emergizing circuit at a predetermined initial starting time of the solenoid, and a low electric retaining voltage required for retention of the energization of the solenoid valve after the predetermined starting time has elapsed.

摘要翻译： 一种控制电路单元，用于控制结合在可变容量压缩机中​​的电磁操作容量控制单元的螺线管的通电，通常为用于汽车空调的可变容量摇摆板式制冷剂压缩机，具有用于建立 在电磁阀用于改变压缩机容量的情况下，螺线管的通电电路的导通，以及用于在预定的初始启动时间向螺线管突出电路施加高电启动电压的电力供应电压控制电路 螺线管，以及在预定的启动时间过去之后保持电磁阀通电所需的低电保持电压。

公开(公告)号：US4575478A

公开(公告)日：1986-03-11

申请号：US611526

申请日：1984-05-17

申请人： Junichi Ohno

发明人： Junichi Ohno

IPC分类号： C08G59/68 ,  C08G59/70 ,  G03G9/08 ,  G03G9/087 ,  G03G9/097 ,  G03G9/06

CPC分类号： G03G9/09783 ,  C08G59/681 ,  C08G59/70 ,  G03G9/08753

摘要： Provided is a toner for use in electrophotography comprising (A) an epoxy resin or a modified epoxy resin obtained by the reaction of an epoxy resin with a polyfunctional compound having at least two carboxyl or amino groups per molecule, and (B) a bivalent or polyvalent metal complex compound or a bivalent or polyvalent metal salt.

摘要翻译： 提供一种用于电子照相术的调色剂，其包含（A）通过环氧树脂与每分子具有至少两个羧基或氨基的多官能化合物反应获得的环氧树脂或改性环氧树脂，和（B）二价或 多价金属络合物或二价或多价金属盐。

公开(公告)号：US4676224A

公开(公告)日：1987-06-30

申请号：US723886

申请日：1985-04-16

申请人： Junichi Ohno

发明人： Junichi Ohno

IPC分类号： C10C3/12 ,  E01C19/08 ,  E01C19/46 ,  E01H5/10 ,  E01H5/00

CPC分类号： E01C19/46 ,  C10C3/12 ,  E01C19/08 ,  E01H5/10

摘要： A heating and melting apparatus according to the present invention has a housing for receiving a substance to be melted, a heater for heating the housing in order to melt the substance, and a vessel for receiving and storing the resulting liquid. The liquid stored in the vessel is exhausted from the vessel in an effectively utilizable form. The operation of the apparatus is controlled by a processing unit in accordance with the temperatures of the housing and the liquid stored in the vessel.

摘要翻译： 根据本发明的加热和熔化装置具有用于接收待熔化的物质的壳体，用于加热壳体以便熔化物质的加热器，以及用于接收和储存所得液体的容器。 存储在容器中的液体以可有效利用的形式从容器中排出。 该装置的操作由处理单元根据壳体和存储在容器中的液体的温度来控制。

公开(公告)号：US4523963A

公开(公告)日：1985-06-18

申请号：US583833

申请日：1984-02-27

申请人： Takao Ohta ,  Junichi Ohno

发明人： Takao Ohta ,  Junichi Ohno

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/324 ,  H01L21/76 ,  H01L21/762 ,  H01L21/86 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/78657 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02694 ,  H01L21/26506 ,  H01L21/2652 ,  H01L21/324 ,  H01L21/76264 ,  H01L21/86 ,  H01L29/78609 ,  H01L21/76267 ,  H01L21/76281

摘要： A method for manufacturing a semiconductor device, comprising the steps of forming a monocrystalline silicon layer on a sapphire substrate, ion-implanting silicon and oxygen in a portion of the silicon layer which is in the vicinity of an interface between the substrate and the silicon layer, performing annealing to improve a crystal structure of the portion of the silicon layer in the vicinity of the interface and forming an insulation layer, selectively forming an element isolation region in the silicon layer to obtain an island silicon layer, forming a gate insulation film on the island silicon layer, forming a gate electrode on the gate insulation film, ion-implanting an impurity in the island silicon layer by using the gate electrode as a mask, and annealing a resultant structure to form source and drain regions in the island silicon layer such that bottoms thereof reach a surface of the insulation layer.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在蓝宝石衬底上形成单晶硅层，在硅层的位于衬底和硅层之间的界面附近的部分中离子注入硅和氧 ，进行退火以提高界面附近的硅层的部分的晶体结构，形成绝缘层，在硅层中选择性地形成元件隔离区域，得到岛状硅层，形成栅极绝缘膜 岛状硅层，在栅极绝缘膜上形成栅电极，通过使用栅极电极作为掩模，在岛状硅层中离子注入杂质，退火所得的结构，在岛状硅层中形成源极和漏极区域 使得其底部到达绝缘层的表面。

公开(公告)号：US4513310A

公开(公告)日：1985-04-23

申请号：US493226

申请日：1983-05-10

申请人： Junichi Ohno ,  Satoshi Konishi

发明人： Junichi Ohno ,  Satoshi Konishi

IPC分类号： H01L23/525 ,  H01L29/40 ,  B23K9/24 ,  H01L29/04 ,  H01L29/42

CPC分类号： H01L23/525 ,  H01L2924/0002

摘要： A first wiring to be connected as needed and second wirings to be disconnected as needed are formed three-dimensionally with an insulation film interposed therebetween. The first wiring comprises at least three first semiconductor regions of a second conductivity type formed at predetermined intervals in the surface of a semiconductor substrate of a first conductivity type, and second semiconductor regions of the first conductivity type formed between each pair of adjacent first semiconductor regions. The second wirings are formed on the first wiring through the insulation film and in a number equal to that of the second semiconductor regions. Each second wiring and the corresponding second semiconductor region are located within a spot of a radiating means radiated vertically onto the semiconductor substrate for switching the wirings.

摘要翻译： 根据需要连接的第一布线和根据需要断开的第二布线以介于其间的绝缘膜三维地形成。 第一布线包括在第一导电类型的半导体衬底的表面中以预定间隔形成的至少三个第二导电类型的第一半导体区域，以及形成在每对相邻的第一半导体区域之间的第一导电类型的第二半导体区域 。 第二布线通过绝缘膜形成在第一布线上，数量等于第二布线。 每个第二布线和相应的第二半导体区域位于垂直辐射到半导体基板上用于切换布线的辐射装置的光点内。

公开(公告)号：US4494996A

公开(公告)日：1985-01-22

申请号：US483706

申请日：1983-04-11

申请人： Junichi Ohno ,  Takao Ohta

发明人： Junichi Ohno ,  Takao Ohta

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L21/86 ,  H01L27/12 ,  H01L29/786 ,  H01L7/00

CPC分类号： H01L21/86 ,  H01L21/26533 ,  H01L21/316 ,  H01L21/76264 ,  H01L27/12 ,  H01L21/76272 ,  H01L21/76281 ,  Y10S148/077 ,  Y10S148/085 ,  Y10S148/097 ,  Y10S148/118 ,  Y10S148/15

摘要： A semiconductor device comprising an insulating substrate such as sapphire and a semiconductor element region formed on the substrate, wherein an insulating layer containing yttrium or a lanthanide element is interposed between the substrate and semiconductor element region. A method of manufacturing a semiconductor device such as MOS/SOS wherein yttrium or a lanthanide element is ion implanted into an interface between the substrate and the semiconductor film formed on the substrate to form an insulating layer containing yttrium or a lanthanide element at the interface.

摘要翻译： 一种半导体器件，包括诸如蓝宝石的绝缘衬底和形成在衬底上的半导体元件区，其中在衬底和半导体元件区之间插入含有钇或镧系元素的绝缘层。 制造诸如MOS / SOS的半导体器件的方法，其中将钇或镧系元素离子注入到在衬底和形成在衬底上的半导体膜之间的界面中，以在界面处形成包含钇或镧系元素的绝缘层。