公开(公告)号：US20160064265A1

公开(公告)日：2016-03-03

申请号：US14634389

申请日：2015-02-27

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Kenro NAKAMURA

IPC分类号： H01L21/683

CPC分类号： H01L21/6836 ,  H01L21/6835 ,  H01L21/76898 ,  H01L25/0657 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/05009 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2224/03

摘要： According to one embodiment, there is provided a temporarily bonding support substrate including an underlayer and a heat generable layer. A device substrate is to be temporarily bonded to the heat generable layer on an opposite side of the underlayer.

摘要翻译： 根据一个实施例，提供了一种临时粘合支撑基底，其包括底层和发热层。 装置基板临时结合到底层相对侧上的发热层。

公开(公告)号：US20160268163A1

公开(公告)日：2016-09-15

申请号：US15063187

申请日：2016-03-07

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Kenro NAKAMURA

IPC分类号： H01L21/768 ,  H01L23/373 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/481

摘要： The semiconductor device includes a semiconductor layer in which a via hole penetrating an upper surface of the semiconductor layer to a lower surface of the semiconductor layer is provided. The semiconductor device includes a first insulating film provided over the lower surface of the semiconductor layer and an inner surface of the via hole. The semiconductor device includes a second insulating film provided over the lower surface of the semiconductor layer and the inner surface of the via hole with the first insulating film interposed between the second insulating film and the semiconductor layer. The semiconductor device includes a device layer including a semiconductor element and provided on the side of the upper surface of the semiconductor layer.

摘要翻译： 半导体器件包括半导体层，其中设置有穿透半导体层的上表面到半导体层的下表面的通孔。 半导体器件包括设置在半导体层的下表面上的第一绝缘膜和通孔的内表面。 半导体器件包括设置在半导体层的下表面和通孔的内表面上的第二绝缘膜，其中第一绝缘膜介于第二绝缘膜和半导体层之间。 半导体器件包括设置在半导体层的上表面侧的半导体元件的器件层。

公开(公告)号：US20160141247A1

公开(公告)日：2016-05-19

申请号：US15005377

申请日：2016-01-25

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Kenro NAKAMURA ,  Hirokazu EZAWA

IPC分类号： H01L23/535 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L23/535 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/528 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/80 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05026 ,  H01L2224/05547 ,  H01L2224/05557 ,  H01L2224/05562 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08147 ,  H01L2224/08148 ,  H01L2224/10126 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11616 ,  H01L2224/13009 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/80203 ,  H01L2224/8083 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8183 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/04941

摘要： A method of manufacturing a semiconductor device includes forming an opening in a first substrate and filling the opening with a metal to form a first connection electrode. The first substrate is then polished by chemical mechanical polishing under conditions such that a polishing rate of the metal is less that of the region surrounding the metal. The chemical mechanical polishing thereby causes the first connection electrode to protrude from the surface of the first substrate. The first substrate is stacked with a second substrate having a second connection electrode. The first and second connection electrodes are bonded by applying pressure and heating to a temperature that is below the melting point of the metal of the first connection electrode.

公开(公告)号：US20150028493A1

公开(公告)日：2015-01-29

申请号：US14191308

申请日：2014-02-26

申请人： Kabushiki Kaisha Toshiba

发明人： Kenro NAKAMURA ,  Hirokazu EZAWA

IPC分类号： H01L23/00 ,  H01L23/522

CPC分类号： H01L23/535 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/528 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/80 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05026 ,  H01L2224/05547 ,  H01L2224/05557 ,  H01L2224/05562 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08147 ,  H01L2224/08148 ,  H01L2224/10126 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11616 ,  H01L2224/13009 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/80203 ,  H01L2224/8083 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8183 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/04941

摘要： A method of manufacturing a semiconductor device includes forming an opening in a first substrate and filling the opening with a metal to form a first connection electrode. The first substrate is then polished by chemical mechanical polishing under conditions such that a polishing rate of the metal is less that of the region surrounding the metal. The chemical mechanical polishing thereby causes the first connection electrode to protrude from the surface of the first substrate. The first substrate is stacked with a second substrate having a second connection electrode. The first and second connection electrodes are bonded by applying pressure and heating to a temperature that is below the melting point of the metal of the first connection electrode.

摘要翻译： 一种制造半导体器件的方法包括在第一衬底中形成开口并用金属填充开口以形成第一连接电极。 然后通过化学机械抛光在使得金属的抛光速率小于金属周围区域的条件下抛光第一衬底。 化学机械抛光使第一连接电极从第一基板的表面突出。 第一衬底与具有第二连接电极的第二衬底层叠。 通过施加压力和加热将第一和第二连接电极接合到低于第一连接电极的金属的熔点的温度。

公开(公告)号：US20140242779A1

公开(公告)日：2014-08-28

申请号：US13954833

申请日：2013-07-30

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Kenro NAKAMURA ,  Mitsuyoshi ENDO ,  Kazuyuki HIGASHI ,  Takashi SHIRONO

IPC分类号： H01L25/00 ,  H01L21/67

CPC分类号： H01L25/50 ,  H01L21/561 ,  H01L21/67092 ,  H01L21/6715 ,  H01L21/6836 ,  H01L23/3178 ,  H01L23/3185 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2224/08146 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/75744 ,  H01L2224/80006 ,  H01L2224/80123 ,  H01L2224/80129 ,  H01L2224/83005 ,  H01L2224/83123 ,  H01L2224/83129 ,  H01L2224/94 ,  H01L2225/06541 ,  H01L2224/83 ,  H01L2224/80

摘要： According to one embodiment, a semiconductor device manufacturing method includes: bonding a first wafer and a second wafer to each other, to form a stack; rubbing a film attached with a fill material in a thin-film shape into a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material; and thinning the first wafer.

摘要翻译： 根据一个实施例，半导体器件制造方法包括：将第一晶片和第二晶片彼此接合，以形成堆叠; 将附着有薄膜形状的填充材料的膜摩擦到位于第一晶片的斜面和第二晶片的斜面之间的间隙中，以填充与填充材料的间隙; 并使第一晶片变薄。