CVD diamond coating annulus components and method of their fabrication
    2.
    发明授权
    CVD diamond coating annulus components and method of their fabrication 失效
    CVD金刚石涂层环形部件及其制造方法

    公开(公告)号:US5508071A

    公开(公告)日:1996-04-16

    申请号:US127964

    申请日:1993-09-28

    CPC分类号: C23C16/045 Y10T428/131

    摘要: In its broadest aspects, the present invention is directed to a method for improving the abrasion resistance of the annular interior surface of an annulus. Such method comprises the steps of (a) placing said annulus heated to an elevated CVD diamond-forming temperature in a vacuum chamber held under reduced pressure; (b) providing a hydrocarbon/hydrogen gaseous mixture within said chamber; (c) at least partially decomposing said gaseous mixture in said chamber; and (d) directing said at least partially decomposed gaseous mixture into said heated annular interior for diamond deposition/growth to occur on said annular interior surface. As noted above, spray nozzles, valves, injectors, wire drawing dies, and like annular products are ideally suited for use in accordance with the precepts of the present invention.

    摘要翻译: 在其最广泛的方面,本发明涉及一种改善环形环的内表面的耐磨性的方法。 这种方法包括以下步骤:(a)将加热到升高的CVD金刚石形成温度的所述环带放置在减压保持的真空室中; (b)在所述室内提供烃/氢气体混合物; (c)至少部分地分解所述室中的所述气体混合物; 和(d)将所述至少部分分解的气体混合物引导到所述加热的环形内部中,以使金刚石沉积/生长发生在所述环形内表面上。 如上所述,喷嘴,阀门,注射器,拉丝模具等环形产品理想地适合于根据本发明的规范使用。

    CVD diamond by alternating chemical reactions
    3.
    发明授权
    CVD diamond by alternating chemical reactions 失效
    CVD金刚石交替进行化学反应

    公开(公告)号:US5302231A

    公开(公告)日:1994-04-12

    申请号:US956817

    申请日:1992-10-05

    摘要: The present invention relates to a method for growing diamond on a diamond substrate by chemical vapor deposition. The inventive method comprises alternatingly contacting at elevated temperature said diamond substrate with a gas having the formula C.sub.n X.sub.m and then with a gas having the formula C.sub.l Z.sub.p. X and Z each form single bonds with carbon. X and Z also are reactable to form ZX or a derivative thereof. The Z--X bond is stronger than the C--X bond and also is stronger than the C--Z bond. In the formulas, n, m, l, and p are integers. If C.sub.n X.sub.m and C.sub.l Z.sub.p do not react in the gas phase, then a gas mixture of them can be used to grow diamond instead of the alternating exposure of one and then the other.

    摘要翻译: 本发明涉及通过化学气相沉积在金刚石基底上生长金刚石的方法。 本发明的方法包括在升高的温度下将所述金刚石基底与具有式C n X m的气体交替接触,然后与具有式ClZp的气体交替接触。 X和Z各自与碳形成单键。 X和Z也可以反应形成ZX或其衍生物。 Z-X键比C-X键强,也比C-Z键强。 在公式中,n,m,l和p是整数。 如果CnXm和ClZp在气相中没有反应,则可以使用它们的气体混合物来生长金刚石,而不是交替暴露于另一种。

    Carbon chalcogenide macromolecular composition and process for
preparation thereof
    8.
    发明授权
    Carbon chalcogenide macromolecular composition and process for preparation thereof 失效
    碳硫属化物大分子组成及其制备方法

    公开(公告)号:US5152930A

    公开(公告)日:1992-10-06

    申请号:US654697

    申请日:1991-02-13

    IPC分类号: C23C16/30

    CPC分类号: C23C16/30

    摘要: A carbon chalcogenide macromolecular composition prepared from carbon dichalcogenide and to a process for the preparation thereof. A carbon dichalcogenide, for example, carbon disulfide, in entrained in an inert gas, and the mixture formed therefrom is passed over a hot tungsten filament wherein carbon disulfide is degraded into fragments. The fragments are then deposited onto a surface of a non-reactive substrate. The deposited fragments recombine to form the macromolecular composition. A significant characteristic of the composition is its threshold voltage above which its electrical resistance drops precipitously. This characteristic also exhibits a unique temperature dependence. Dopants may be added to the composition to reduce the electrical resistance.

    摘要翻译: 由碳二硫属元素化合物制备的碳硫属化物大分子组合物及其制备方法。 夹带在惰性气体中的二硫代二碳化碳,例如二硫化碳,以及由其形成的混合物通过其上二硫化碳被分解成片段的热钨丝。 然后将碎片沉积在非反应性基底的表面上。 沉积的片段重组形成大分子组合物。 组合物的显着特征是其阈值电压高于其阈值电压,其电阻急剧下降。 该特性也具有独特的温度依赖性。 可以向组合物中加入掺杂剂以降低电阻。

    Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond
possessing enhanced thermal conductivity
    10.
    发明授权
    Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond possessing enhanced thermal conductivity 失效
    具有增强的导热性的同位素纯碳12或碳-13多晶金刚石

    公开(公告)号:US5540904A

    公开(公告)日:1996-07-30

    申请号:US368732

    申请日:1995-01-04

    摘要: Broadly, the present invention is directed to polycrystalline diamond of improved thermal conductivity. The novel polycrystalline diamond consists essentially of at least 99.5 wt-% isotopically-pure carbon-12 or carbon-13. The inventive polycrystalline diamond is formed from at least 99.5 wt-% isotopically-pure carbon-12 or carbon-13. Single-crystal isotopically-pure carbon-12 and carbon-13 diamond are known to possess improved thermal conductivity. Polycrystalline diamond, however, possesses lower thermal conductivity patterns deleteriously impacted by, for example, impurities, isotopic effects, and grain boundary scattering. In fact, grain boundary scattering would lead the skilled artisan to believe that the thermal conductivity of polycrystalline diamond would be substantially unaffected by the isotopic nature of the diamond itself. Unexpectedly, however, isotopic effects were discovered to predominate in impacting the thermal conductivity of polycrystalline diamond consisting essentially of isotopically-pure carbon-12 or carbon-13. This is true whether the isotopically-pure polycrystalline diamond is grown directly or whether individual isotopically-pure carbon-12 or carbon 13 diamond crystals are subjected to sintering for forming a polycrystalline structure, e.g. layer or compact, thereof.

    摘要翻译: 概括地说,本发明涉及具有改善导热性的多晶金刚石。 新型多晶金刚石基本上由至少99.5重量%的同位素纯碳-12或碳-13组成。 本发明的多晶金刚石由至少99.5重量%的同位素纯碳-12或碳-13形成。 已知单晶同位素纯碳-12和碳-13金刚石具有改善的导热性。 然而,多晶金刚石具有由例如杂质,同位素效应和晶界散射有害影响的较低热导率图案。 事实上,晶粒边界散射将导致技术人员相信,多晶金刚石的导热性将基本上不受金刚石本身的同位素性质的影响。 然而,意外的是,发现同位素效应在影响基本上由同位素纯碳-12或碳-13组成的多晶金刚石的热导率方面占优势。 无论同位素纯多晶金刚石是直接生长还是单独同位素纯碳12或碳13金刚石晶体进行烧结以形成多晶结构,例如, 层或紧凑。