公开(公告)号：US07301979B2

公开(公告)日：2007-11-27

申请号：US10825407

申请日：2004-04-14

申请人： Keiji Ito ,  Isao Kidoguchi ,  Toru Takayama ,  Osamu Imafuji

发明人： Keiji Ito ,  Isao Kidoguchi ,  Toru Takayama ,  Osamu Imafuji

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/028 ,  H01S5/0655 ,  H01S5/1014 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/18 ,  H01S2304/04

摘要： A semiconductor laser device of the present invention includes: a first conductivity type cladding layer; an active layer; and a second conductivity type cladding layer, which are on a substrate. The semiconductor laser device further includes a stripe structure for injecting carriers therein. A width of the stripe is wider at a front end face of a resonator from which laser light is emitted than at a rear end face that is located on an opposite side of the front end face, and a reflectance of the front end face is lower than a reflectance of the rear end face. With this configuration, the injection of carriers into an active layer can be controlled in accordance with an optical intensity distribution along the resonator direction within the semiconductor laser, thus achieving a decrease in threshold current, an enhancement of a slope efficiency and an enhancement of a kink level. As a result, the semiconductor laser device can be provided so that stable laser oscillation in the fundamental transverse mode can be realized up to the time of a high optical output operation.

摘要翻译： 本发明的半导体激光器件包括：第一导电型包覆层; 活性层 和第二导电型包覆层。 半导体激光装置还包括用于在其中注入载体的条纹结构。 在发射激光的谐振器的前端面上的宽度比位于前端面相对侧的后端面宽，并且前端面的反射率较低 比后端面的反射率高。 利用这种配置，可以根据沿着半导体激光器内的谐振器方向的光强度分布来控制载流子进入有源层，从而实现阈值电流的降低，斜率效率的提高和 扭结水平 结果，可以提供半导体激光器件，使得可以在高光输出操作时实现在基本横向模式下的稳定的激光振荡。

公开(公告)号：US5751756A

公开(公告)日：1998-05-12

申请号：US707566

申请日：1996-09-04

申请人： Toru Takayama ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Kume ,  Akio Yoshikawa

发明人： Toru Takayama ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Kume ,  Akio Yoshikawa

IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/2004 ,  H01S5/205

摘要： A buffer layer composed of an n-type semiconductor layer, a cladding layer composed of an n-type semiconductor layer, and an active layer are formed sequentially on an n-type semiconductor substrate. On the active layer, there are formed a first optical guiding layer composed of a p-type semiconductor layer including a loss varying layer composed of a p-type semiconductor layer having a bandgap smaller than that of the active layer and a second optical guiding layer composed of a p-type semiconductor layer in this order. On the second optical guiding layer, there is formed a third optical guiding layer composed of a p-type semiconductor layer extending in a stripe. On both sides of the third optical guiding layer on the second optical guiding layer, there are formed current blocking layers which become transparent to a lasing light generated in the active layer composed of the n-type semiconductor layer.

摘要翻译： 在n型半导体衬底上依次形成由n型半导体层，由n型半导体层构成的覆层和有源层构成的缓冲层。 在有源层上形成有由p型半导体层构成的第一光导层，该p型半导体层包括由具有小于有源层的带隙的p型半导体层构成的损耗变化层和第二光导层 由p型半导体层构成。 在第二光导层上形成由条带延伸的p型半导体层构成的第三光导层。 在第二导光层上的第三光导层的两侧形成有对由在n型半导体层构成的有源层中产生的激光产生透明的电流阻挡层。

公开(公告)号：US06909733B2

公开(公告)日：2005-06-21

申请号：US09968942

申请日：2001-10-03

申请人： Katsuya Samonji ,  Toru Takayama ,  Osamu Imafuji ,  Masaaki Yuri

发明人： Katsuya Samonji ,  Toru Takayama ,  Osamu Imafuji ,  Masaaki Yuri

IPC分类号： H01S5/30 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/00

CPC分类号： H01S5/32308 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3213

摘要： A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of Alx1Ga1−x1As and a p-type cladding layer of (AlxGa1−x)yIn1−yP for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output.

摘要翻译： 半导体激光器件包括在有源层的顶部上形成具有Al x 1 Ga 1-x As As的n型包覆层和（ 用于限定势垒高度的第1 -Y-P层中的至少一个。 用于限定势垒高度的p型包覆层包含比n型包覆层更多的组成元素。 用于限定势垒高度的p型覆层的导带边缘与有源层之间的电位差大于n型覆层和有源层的导带边缘之间的电位差。 有源层中的载流子被阻止溢出到p型包覆层中，并且具有高导热性的材料用于n型包覆层以防止热饱和现象，从而提供改善的光输出。

公开(公告)号：US06274518B1

公开(公告)日：2001-08-14

申请号：US09546881

申请日：2000-04-10

申请人： Masaaki Yuri ,  Osamu Imafuji ,  Shinji Nakamura ,  Masahiro Ishida ,  Kenji Orita

发明人： Masaaki Yuri ,  Osamu Imafuji ,  Shinji Nakamura ,  Masahiro Ishida ,  Kenji Orita

IPC分类号： H01L2131

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02661 ,  H01L21/02664 ,  H01L31/184 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： The present invention provides a method for producing a group III nitride compound semiconductor substrate including: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film. Thus, a large-area group III nitride compound semiconductor substrate can be produced in high yields and with high reproducibility.

摘要翻译： 本发明提供了一种制造III族氮化物化合物半导体衬底的方法，包括：（a）在衬底上形成第一半导体膜，所述第一半导体膜由第一III族氮化物化合物半导体制成并具有步骤; （b）在第一半导体膜上形成具有与第一III族氮化物半导体不同的热膨胀系数的第二III族氮化物化合物半导体的第二半导体膜; 和（c）冷却基板并将第二半导体膜与第一半导体膜分离。 因此，可以以高产率和高重现性制造大面积III族氮化物化合物半导体衬底。

公开(公告)号：US06821805B1

公开(公告)日：2004-11-23

申请号：US09680054

申请日：2000-10-05

申请人： Shinji Nakamura ,  Masahiro Ishida ,  Kenji Orita ,  Osamu Imafuji ,  Masaaki Yuri

发明人： Shinji Nakamura ,  Masahiro Ishida ,  Kenji Orita ,  Osamu Imafuji ,  Masaaki Yuri

IPC分类号： H01L2100

CPC分类号： C30B25/183 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02516 ,  H01L21/0254 ,  H01L33/025 ,  H01L33/20 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32341

摘要： Disclosed is a semiconductor device which comprises a substrate in which surface is formed a depression having a closed figure when viewed from the substrate normal and a semiconductor layer which is formed on the surface of the substrate by crystal growth from at least an inside face of the depression.

摘要翻译： 公开了一种半导体器件，其包括基板，其中从基板法线观察时，表面形成有具有闭合图形的凹陷;以及半导体层，其通过晶体生长从基板法线的至少内表面形成在基板的表面上 萧条。

公开(公告)号：US6069394A

公开(公告)日：2000-05-30

申请号：US56500

申请日：1998-04-08

申请人： Tadao Hashimoto ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Ishida

发明人： Tadao Hashimoto ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Ishida

IPC分类号： C30B25/18 ,  H01L33/00 ,  H01S5/02 ,  H01S5/323 ,  H01L31/00 ,  H01L29/06 ,  H01L31/06 ,  H01L31/12

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C30B25/18 ,  H01S2301/173 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/34333

摘要： A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In.sub.0.2 Ga.sub.0.8 N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.

公开(公告)号：US06815726B2

公开(公告)日：2004-11-09

申请号：US10249116

申请日：2003-03-17

申请人： Masahiro Ishida ,  Shinji Nakamura ,  Kenji Orita ,  Osamu Imafuji ,  Masaaki Yuri

发明人： Masahiro Ishida ,  Shinji Nakamura ,  Kenji Orita ,  Osamu Imafuji ,  Masaaki Yuri

IPC分类号： H01L2922

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079

摘要： A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.

公开(公告)号：US06420197B1

公开(公告)日：2002-07-16

申请号：US09511371

申请日：2000-02-23

申请人： Masahiro Ishida ,  Masaaki Yuri ,  Osamu Imafuji ,  Shinji Nakamura ,  Kenji Orita

发明人： Masahiro Ishida ,  Masaaki Yuri ,  Osamu Imafuji ,  Shinji Nakamura ,  Kenji Orita

IPC分类号： H01L2100

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L33/0079 ,  H01S5/32341

摘要： A semiconductor device comprises a substrate having a first thermal expansion coefficient T1, a strain reducing layer formed on the substrate and having a second thermal expansion coefficient T2, and a semiconductor layer formed on the strain reducing layer, having a third thermal expansion coefficient T3, and made of a nitride compound represented by AlyGa1−y−zInzN (0≦y≦1, 0≦z ≦1). The second thermal expansion coefficient T2 is lower than the first thermal expansion coefficient T1. The third thermal expansion coefficient T3 is lower than the first thermal expansion coefficient T1 and higher than the second thermal expansion coefficient T2.

摘要翻译： 半导体器件包括具有第一热膨胀系数T1的基板和形成在基板上并具有第二热膨胀系数T2的应变减小层，以及形成在应变减小层上的具有第三热膨胀系数T3的半导体层， 并由由Al y Ga 1-y-z In z N（0≤y≤1,0<= z <= 1）表示的氮化物组成。 第二热膨胀系数T2低于第一热膨胀系数T1。 第三热膨胀系数T3比第一热膨胀系数T1低，高于第二热膨胀系数T2。

公开(公告)号：US06593159B1

公开(公告)日：2003-07-15

申请号：US09532063

申请日：2000-03-21

申请人： Tadao Hashimoto ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Ishida

发明人： Tadao Hashimoto ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Ishida

IPC分类号： H01L2100

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C30B25/18 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173

摘要： A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In0.2Ga0.8N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.

摘要翻译： 蓝宝石衬底，未掺杂GaN的缓冲层和连续形成在蓝宝石衬底上的化合物半导体晶体层一起形成发光二极管的衬底。 n型GaN的第一包层，未掺杂的In 0.2 Ga 0.8 N的有源层和连续形成在化合物半导体晶体层上的第二覆层一起形成发光二极管的器件结构。 在第二包层上形成p型电极，在第一包层上形成n型电极。 在与p型电极相对的蓝宝石衬底的一部分中，形成具有梯形截面的凹部，使得凹部上方的蓝宝石衬底的上部的厚度可以基本上等于或小于 化合物半导体晶体层。

公开(公告)号：US06566231B2

公开(公告)日：2003-05-20

申请号：US09790908

申请日：2001-02-23

申请人： Masahiro Ogawa ,  Kenji Orita ,  Masahiro Ishida ,  Shinji Nakamura ,  Osamu Imafuji ,  Masaaki Yuri

发明人： Masahiro Ogawa ,  Kenji Orita ,  Masahiro Ishida ,  Shinji Nakamura ,  Osamu Imafuji ,  Masaaki Yuri

IPC分类号： H01L2176

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02642 ,  H01L21/02647

摘要： A first semiconductor layer is epitaxially grown on a semiconductor substrate and patterned to form concave and convex portions. A second semiconductor layer is formed on the first semiconductor layer using a top epitaxial mask covering the top surface of the convex portion. Lattice defects D propagating from the first semiconductor layer exist only in a region located above the center of the concave portion (a defect region Ra), while in the other region (a low defect region Rb) lattice defects D propagating from the first semiconductor layer hardly exist.

摘要翻译： 第一半导体层在半导体衬底上外延生长并图案化以形成凹凸部分。 使用覆盖凸部的顶面的顶部外延掩模，在第一半导体层上形成第二半导体层。 从第一半导体层传播的晶格缺陷D仅存在于位于凹部的中心以上的区域（缺陷区域Ra），而在另一区域（低缺陷区域Rb）中，从第一半导体层传播的缺陷D 几乎不存在