公开(公告)号：US5309001A

公开(公告)日：1994-05-03

申请号：US980666

申请日：1992-11-24

申请人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Hiroshi Nakatsu ,  Tadashi Takeoka ,  Osamu Yamamoto ,  Kazuaki Sasaki

发明人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Hiroshi Nakatsu ,  Tadashi Takeoka ,  Osamu Yamamoto ,  Kazuaki Sasaki

IPC分类号： H01L33/38 ,  H01L33/00

CPC分类号： H01L33/385 ,  H01L33/38 ,  H01L33/20 ,  H01L33/24

摘要： A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.

摘要翻译： LED的表面上的表面电极具有焊盘，并且至少一级从焊盘线性延伸的分支，二阶分支从一级分支发散并线性延伸，三阶分支发散， 从二阶分支线性延伸。 表面电极中的焊盘不与下面的半导体层电接触，而表面电极和半导体层在最高级分支的端部彼此电接触。 而且，半导体层沿着台面形状的表面电极的图案设置。 因此，表面电极下方的无效光发射相对减少，从而可以提高外部量子效率，而且通过省略电流扩散层，甚至可以通过高效率地允许更短波长的光线出射。

公开(公告)号：US5228047A

公开(公告)日：1993-07-13

申请号：US762769

申请日：1991-09-20

申请人： Mitsuhiro Matsumoto ,  Kazuaki Sasaki ,  Masaki Kondo ,  Tadashi Takeoka ,  Hiroshi Nakatsu ,  Masanori Watanabe ,  Osamu Yamamoto ,  Saburo Yamamoto

发明人： Mitsuhiro Matsumoto ,  Kazuaki Sasaki ,  Masaki Kondo ,  Tadashi Takeoka ,  Hiroshi Nakatsu ,  Masanori Watanabe ,  Osamu Yamamoto ,  Saburo Yamamoto

IPC分类号： H01L33/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/10 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/164 ,  H01L33/0062 ,  H01S2301/18 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/1064 ,  H01S5/204 ,  H01S5/2211 ,  H01S5/222 ,  H01S5/3201 ,  H01S5/32316 ,  H01S5/32325

摘要： A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.

公开(公告)号：US07362788B2

公开(公告)日：2008-04-22

申请号：US10949536

申请日：2004-09-23

申请人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Tadashi Takeoka ,  Fumie Kunimasa

发明人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Tadashi Takeoka ,  Fumie Kunimasa

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/162 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/173 ,  H01S2301/18

摘要： The present invention provides a semiconductor laser including a lower clad layer, an active layer including at least one quantum well layer, and an upper clad layer formed in this order above a semiconductor substrate, and having a window region including a portion in which the quantum well layer in the active layer and layers adjacent to the active layer are intermixed in the vicinity of a light emitting end face perpendicular to the surface of the semiconductor substrate, in which the lower clad layer has a refractive index higher than that of the upper clad layer, and the light intensity distribution in the window region spreads more widely in the direction perpendicular to the surface of the semiconductor substrate than the light intensity distribution in the gain region, and also provides a method for fabricating such a semiconductor laser.

摘要翻译： 本发明提供了一种半导体激光器，其包括下覆盖层，包括至少一个量子阱层的有源层和在半导体衬底上方依次形成的上覆盖层，并且具有包括部分的窗口区域，其中量子 有源层中的阱层和与有源层相邻的层在与半导体衬底的表面垂直的发光端面附近混合，其中下覆盖层的折射率高于上覆层的折射率 层，并且窗口区域中的光强度分布在垂直于半导体衬底的表面的方向上比在增益区域中的光强度分布更广泛地扩展，并且还提供了制造这种半导体激光器的方法。

公开(公告)号：US20050069004A1

公开(公告)日：2005-03-31

申请号：US10949536

申请日：2004-09-23

申请人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Tadashi Takeoka ,  Fumie Kunimasa

发明人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Tadashi Takeoka ,  Fumie Kunimasa

IPC分类号： H01S5/20 ,  B82Y20/00 ,  H01S5/00 ,  H01S5/028 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/162 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/173 ,  H01S2301/18

摘要： The present invention provides a semiconductor laser including a lower clad layer, an active layer including at least one quantum well layer, and an upper clad layer formed in this order above a semiconductor substrate, and having a window region including a portion in which the quantum well layer in the active layer and layers adjacent to the active layer are intermixed in the vicinity of a light emitting end face perpendicular to the surface of the semiconductor substrate, in which the lower clad layer has a refractive index higher than that of the upper clad layer, and the light intensity distribution in the window region spreads more widely in the direction perpendicular to the surface of the semiconductor substrate than the light intensity distribution in the gain region, and also provides a method for fabricating such a semiconductor laser.

摘要翻译： 本发明提供了一种半导体激光器，其包括下覆盖层，包括至少一个量子阱层的有源层和在半导体衬底上方依次形成的上覆盖层，并且具有包括部分的窗口区域，其中量子 有源层中的阱层和与有源层相邻的层在与半导体衬底的表面垂直的发光端面附近混合，其中下覆盖层的折射率高于上覆层的折射率 层，并且窗口区域中的光强度分布在垂直于半导体衬底的表面的方向上比在增益区域中的光强度分布更广泛地扩展，并且还提供了制造这种半导体激光器的方法。

公开(公告)号：US6002701A

公开(公告)日：1999-12-14

申请号：US771150

申请日：1996-12-20

申请人： Yasuo Kan ,  Kentaro Tani ,  Tadashi Takeoka ,  Akiyoshi Sugahara

发明人： Yasuo Kan ,  Kentaro Tani ,  Tadashi Takeoka ,  Akiyoshi Sugahara

IPC分类号： H01S5/00 ,  H01S5/065 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/0658 ,  H01S5/2219

摘要： A self-pulsation type semiconductor laser device includes a semiconductor substrate of a first conductive type and a multilayered structure including at least an active layer provided on the semi conductor substrate. The multilayered structure includes a first cladding layer of the first conductive type provided below the active layer, a second cladding layer of a second conductive type having a striped ridge portion provided above the active layer and a saturable absorbing film provided over the second cladding layer. The saturable absorbing film includes an accumulation region for accumulating photoexcited carriers. The accumulating region is provided apart from a surface of the second cladding layer.

摘要翻译： 自脉动型半导体激光器件包括第一导电类型的半导体衬底和至少包括设置在半导体衬底上的有源层的多层结构。 多层结构包括设置在有源层下方的第一导电类型的第一包层，具有设置在有源层上方的条纹脊部的第二导电类型的第二包层和设置在第二包层上的可饱和吸收膜。 可饱和吸收膜包括用于积聚光激发载流子的积聚区域。 蓄积区域与第二包覆层的表面分开设置。

公开(公告)号：US08816321B2

公开(公告)日：2014-08-26

申请号：US13584353

申请日：2012-08-13

申请人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

发明人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

IPC分类号： H01L29/06 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/025 ,  H01L33/06 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device includes an n-type nitride semiconductor layer, a V pit generation layer, an intermediate layer, a multiple quantum well light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The multiple quantum well light-emitting layer is a layer formed by alternately stacking a barrier layer and a well layer having a bandgap energy smaller than that of the barrier layer. A V pit is partly formed in the multiple quantum well light-emitting layer, and an average position of starting point of the V pit is located in the intermediate layer.

摘要翻译： 氮化物半导体发光器件包括依次提供的n型氮化物半导体层，V坑生成层，中间层，多量子阱发光层和p型氮化物半导体层。 多量子阱发光层是通过交替层叠阻挡层和具有比阻挡层的能隙小的带隙能量的阱层而形成的层。 在多量子阱发光层中部分地形成V凹坑，并且V凹坑的起始点的平均位置位于中间层中。

公开(公告)号：US20060121633A1

公开(公告)日：2006-06-08

申请号：US11268735

申请日：2005-11-08

申请人： Tadashi Takeoka ,  Takuroh Ishikura

发明人： Tadashi Takeoka ,  Takuroh Ishikura

IPC分类号： H01L21/66 ,  H01S5/00

CPC分类号： H01S5/0021

摘要： A semiconductor laser device manufacturing method includes, sequentially, a first aging step S1, a first inspection step S2, a mounting step S3, a second aging step S4 and a second inspection step S5. Since the first aging step S1 on a semiconductor laser chip with a high-temperature direct current conduction is performed before the mounting step S3, threshold current and drive current of the semiconductor laser chip before mounting can be reduced.

摘要翻译： 半导体激光器件制造方法依次包括第一老化步骤S1，第一检查步骤S2，安装步骤S3，第二老化步骤S 4和第二检查步骤S 5.由于第一老化步骤S 在安装步骤S3之前，在安装前半导体激光芯片的阈值电流和驱动电流可以减小的情况下，在具有高温直流导通的半导体激光器芯片上执行图1的工作。

公开(公告)号：US20130037779A1

公开(公告)日：2013-02-14

申请号：US13584353

申请日：2012-08-13

申请人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

发明人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

IPC分类号： H01L33/06

CPC分类号： H01L33/025 ,  H01L33/06 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device includes an n-type nitride semiconductor layer, a V pit generation layer, an intermediate layer, a multiple quantum well light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The multiple quantum well light-emitting layer is a layer formed by alternately stacking a barrier layer and a well layer having a bandgap energy smaller than that of the barrier layer. A V pit is partly formed in the multiple quantum well light-emitting layer, and an average position of starting point of the V pit is located in the intermediate layer.

摘要翻译： 氮化物半导体发光器件包括依次提供的n型氮化物半导体层，V坑生成层，中间层，多量子阱发光层和p型氮化物半导体层。 多量子阱发光层是通过交替层叠阻挡层和具有比阻挡层的能隙小的带隙能量的阱层而形成的层。 在多量子阱发光层中部分地形成V凹坑，并且V凹坑的起始点的平均位置位于中间层中。

公开(公告)号：US5789773A

公开(公告)日：1998-08-04

申请号：US724215

申请日：1996-10-01

申请人： Tadashi Takeoka ,  Sadayoshi Matsui

发明人： Tadashi Takeoka ,  Sadayoshi Matsui

IPC分类号： H01L21/203 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/305 ,  H01S5/32325 ,  H01S5/305 ,  H01S5/34326

摘要： In an AlGaInP type semiconductor light-emitting device, an n-type AlGaInP cladding layer and a p-type AlGaInP cladding layer are deposited so as to interpose an active layer made of GaInP or AlGaInP therebetween. Light guiding layers are provided between the active layer and the n-type cladding layer, and/or, between the active layer and the p-type cladding layer, respectively. The p-type cladding layer is doped with Be serving as a p-type dopant. The active layer, the p-type cladding layer and the light guiding layers are doped with Si which may serve as an n-type dopant.

摘要翻译： 在AlGaInP型半导体发光器件中，沉积n型AlGaInP包层和p型AlGaInP包覆层，以在其间插入由GaInP或AlGaInP制成的有源层。 导光层分别设置在有源层和n型覆层之间，和/或分别在有源层和p型覆层之间。 p型覆层掺杂有作为p型掺杂剂的Be。 有源层，p型覆层和导光层掺杂有可用作n型掺杂剂的Si。

公开(公告)号：US07620086B2

公开(公告)日：2009-11-17

申请号：US11872195

申请日：2007-10-15

申请人： Tadashi Takeoka

发明人： Tadashi Takeoka

IPC分类号： H01S5/00 ,  H01S3/08

CPC分类号： B82Y20/00 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/1039 ,  H01S5/162 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34326 ,  H01S5/3436

摘要： In one embodiment of the invention, in a semiconductor laser in which a first conductivity type lower cladding layer, an active layer that includes a quantum well layer, and a second conductivity type upper cladding layer are formed in this order on a semiconductor substrate, a dopant concentration of the lower cladding layer is not more than 4.0×1017/cm3, and a resonator length is not less than 1500 μm.

摘要翻译： 在本发明的一个实施例中，在半导体基板上依次形成第一导电型下包层，包括量子阱层的有源层和第二导电型上覆层的半导体激光器中， 下包层的掺杂剂浓度不大于4.0×10 17 / cm 3，谐振器长度不小于1500μm。