公开(公告)号：US20120327965A1

公开(公告)日：2012-12-27

申请号：US13521555

申请日：2010-02-02

申请人： Kazunori Shinoda ,  Koichiro Adachi ,  Shinji Tsuji ,  Masahiro Aoki

发明人： Kazunori Shinoda ,  Koichiro Adachi ,  Shinji Tsuji ,  Masahiro Aoki

IPC分类号： H01S5/028 ,  H01S5/024 ,  H01L21/02

CPC分类号： H01S5/125 ,  H01S5/0265 ,  H01S5/0267 ,  H01S5/187 ,  H01S5/2081

摘要： In order to provide a semiconductor laser element or an integrated optical device with high reliability, a horizontal-cavity semiconductor laser or an optical module includes a deeply dug DBR mirror serving as a cavity mirror, the deeply dug DBR mirror being composed of a material that is lattice-matched to a substrate and that has a band gap energy that does not absorb light emitted from an active layer.

摘要翻译： 为了提供具有高可靠性的半导体激光元件或集成光学器件，水平腔半导体激光器或光学模块包括用作腔镜的深钻DBR镜，深冲DBR镜由以下材料组成的材料组成： 与衬底晶格匹配，并且具有不吸收从有源层发射的光的带隙能量。

公开(公告)号：US20120230361A1

公开(公告)日：2012-09-13

申请号：US13512595

申请日：2010-11-29

申请人： Koichiro Adachi ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Kazunori Shinoda ,  Shinji Tsuji

发明人： Koichiro Adachi ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Kazunori Shinoda ,  Shinji Tsuji

IPC分类号： H01S5/18

CPC分类号： H01S5/18 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/02284 ,  H01S5/0267 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2224 ,  H01S5/4025 ,  H01S5/4031

摘要： Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure are provided, the first electrode includes an electrode (1) that is provided around one side region of the reflecting part located in the direction intersecting with the traveling direction of light guided through the waveguide layer and an electrode (2) provided around one side region of the cavity structure and the other side region of the reflecting part that are located in the direction parallel with the traveling direction of light guided through the waveguide layer, and the shape of the electrode (2) has different widths at at least two positions.

摘要翻译： 具体地，提供了一种水平腔表面发射激光器，其包括在半导体衬底上：空腔结构; 波导层; 以及反射部，其中，设置在所述半导体衬底上的沿着所述空腔结构的侧面区域和所述反射部分的第一电极和设置在所述空腔结构的主表面上的第二电极，所述第一电极包括电极（1） 设置在与通过波导层引导的光的行进方向相交的方向上的反射部的一个侧面区域和设置在该空腔结构的一个侧面区域的反射部的另一侧区域的电极（2） 位于与通过波导层引导的光的行进方向平行的方向的部分，并且电极（2）的形状在至少两个位置处具有不同的宽度。

公开(公告)号：US08855160B2

公开(公告)日：2014-10-07

申请号：US13512595

申请日：2010-11-29

申请人： Koichiro Adachi ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Kazunori Shinoda ,  Shinji Tsuji

发明人： Koichiro Adachi ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Kazunori Shinoda ,  Shinji Tsuji

IPC分类号： H01S5/18 ,  H01S5/40 ,  H01S5/022 ,  H01S5/22 ,  H01S5/042 ,  H01S5/12 ,  H01S5/026

CPC分类号： H01S5/18 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/02284 ,  H01S5/0267 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2224 ,  H01S5/4025 ,  H01S5/4031

摘要： Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure are provided, the first electrode includes an electrode (1) that is provided around one side region of the reflecting part located in the direction intersecting with the traveling direction of light guided through the waveguide layer and an electrode (2) provided around one side region of the cavity structure and the other side region of the reflecting part that are located in the direction parallel with the traveling direction of light guided through the waveguide layer, and the shape of the electrode (2) has different widths at at least two positions.

摘要翻译： 具体地，提供了一种水平腔表面发射激光器，其包括在半导体衬底上：空腔结构; 波导层; 以及反射部，其中，设置在所述半导体衬底上的沿着所述空腔结构的侧面区域和所述反射部分的第一电极和设置在所述空腔结构的主表面上的第二电极，所述第一电极包括电极（1） 设置在与通过波导层引导的光的行进方向相交的方向上的反射部的一个侧面区域和设置在该空腔结构的一个侧面区域的反射部的另一侧区域的电极（2） 位于与通过波导层引导的光的行进方向平行的方向的部分，并且电极（2）的形状在至少两个位置处具有不同的宽度。

公开(公告)号：US20050078904A1

公开(公告)日：2005-04-14

申请号：US10614779

申请日：2003-07-09

申请人： Hiroshi Sato ,  Akira Taike ,  Kazunori Shinoda ,  Shinji Tsuji

发明人： Hiroshi Sato ,  Akira Taike ,  Kazunori Shinoda ,  Shinji Tsuji

IPC分类号： G02F1/017 ,  G02B6/12 ,  G02B6/122 ,  G02B6/34 ,  G02B6/42 ,  H01S5/022 ,  H01S5/026 ,  H01S5/12

CPC分类号： G02B6/12007 ,  G02B6/1228 ,  G02B6/4215 ,  G02B6/4265 ,  G02B6/4274 ,  G02B2006/12078 ,  H01S5/0265 ,  H01S5/12

摘要： An optical transmission device suitable for a high-speed and large-capacity optical transmission system. An optoelectronic waveguiding device including an optical waveguide layer and cladding layers each having a larger band gap than that of the optical waveguide are deposited above and beneath the optical waveguide layer formed on a semiconductor substrate. The waveguide and cladding layers comprise optical waveguides each having a MQW structure in a direction of a light propagation axis of the optical waveguide layer. Among these optical waveguides, there exists first and second optical waveguides, whose layer structures may be mutually different. The optoelectronic waveguiding device maybe characterized in that an optical waveguide made of a bulk crystal exists in a connection part between the MQW structure waveguides each having a different layer structure. The specific connected optoelectronic waveguiding device elements may include semiconductor lasers, modulators and/or amplifiers.

摘要翻译： 适用于高速大容量光传输系统的光传输装置。 在半导体衬底上形成的光波导层的上方和下方淀积包括光波导层和各自具有比光波导的带隙大的覆层的光电波导装置。 波导和包层包括光波导，每个光波导在光波导层的光传播轴的方向上具有MQW结构。 在这些光波导中，存在第一和第二光波导，其层结构可以相互不同。 光电波导装置的特征在于，由块状晶体制成的光波导存在于具有不同层结构的MQW结构波导之间的连接部分中。 特定连接的光电波导器件元件可以包括半导体激光器，调制器和/或放大器。

公开(公告)号：US06973226B2

公开(公告)日：2005-12-06

申请号：US10614779

申请日：2003-07-09

申请人： Hiroshi Sato ,  Akira Taike ,  Kazunori Shinoda ,  Shinji Tsuji

发明人： Hiroshi Sato ,  Akira Taike ,  Kazunori Shinoda ,  Shinji Tsuji

IPC分类号： G02F1/017 ,  G02B6/12 ,  G02B6/122 ,  G02B6/34 ,  G02B6/42 ,  H01S5/022 ,  H01S5/026 ,  H01S5/12

CPC分类号： G02B6/12007 ,  G02B6/1228 ,  G02B6/4215 ,  G02B6/4265 ,  G02B6/4274 ,  G02B2006/12078 ,  H01S5/0265 ,  H01S5/12

摘要： An optical transmission device suitable for a high-speed and large-capacity optical transmission system. An optoelectronic waveguiding device including an optical waveguide layer and cladding layers each having a larger band gap than that of the optical waveguide are deposited above and beneath the optical waveguide layer formed on a semiconductor substrate. The waveguide and cladding layers comprise optical waveguides each having a MQW structure in a direction of a light propagation axis of the optical waveguide layer. Among these optical waveguides, there exists first and second optical waveguides, whose layer structures may be mutually different. The optoelectronic waveguiding device maybe characterized in that an optical waveguide made of a bulk crystal exists in a connection part between the MQW structure waveguides each having a different layer structure. The specific connected optoelectronic waveguiding device elements may include semiconductor lasers, modulators and/or amplifiers.

摘要翻译： 适用于高速大容量光传输系统的光传输装置。 在半导体衬底上形成的光波导层的上方和下方淀积包括光波导层和各自具有比光波导的带隙大的覆层的光电波导装置。 波导和包层包括光波导，每个光波导在光波导层的光传播轴的方向上具有MQW结构。 在这些光波导中，存在第一和第二光波导，其层结构可以相互不同。 光电波导装置的特征在于，由块状晶体制成的光波导存在于具有不同层结构的MQW结构波导之间的连接部分中。 特定连接的光电波导器件元件可以包括半导体激光器，调制器和/或放大器。

公开(公告)号：US20050195876A1

公开(公告)日：2005-09-08

申请号：US10608011

申请日：2003-06-30

申请人： Hiroshi Sato ,  Masahiro Aoki ,  Shinji Tsuji

发明人： Hiroshi Sato ,  Masahiro Aoki ,  Shinji Tsuji

IPC分类号： H01S5/028 ,  H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/024 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/343

CPC分类号： H01S5/0224 ,  B82Y20/00 ,  G02B2006/12097 ,  H01S5/02272 ,  H01S5/024 ,  H01S5/18308 ,  H01S5/22 ,  H01S5/34306 ,  H01S2301/176

摘要： A server system has servers that can be operated through switching as a primary system and a standby system, and a shared disk unit for storing data accessed by the servers. Each of the servers has a driver that acquires information on a configuration inside the shared disk unit after starting of the system. The driver sets the shared disk unit in an active state in which an access request can be sent to the shared disk unit. Access control determines whether the access request issued by an application should be sent on the basis of a management table indicating inhibited types of access requests for each access destination. The access control sends the access request to the driver when the access request is not inhibited for an access destination of the access request. By this arrangement, hot standby switching processing can be performed at high speed.

摘要翻译： 服务器系统具有可以通过作为主系统和备用系统的切换操作的服务器，以及用于存储由服务器访问的数据的共享磁盘单元。 每个服务器都有一个驱动程序，可以在系统启动后获取有关共享磁盘单元内部配置的信息。 驱动程序将共享磁盘单元设置为可以将访问请求发送到共享磁盘单元的活动状态。 访问控制确定是否应当根据指示每个访问目的地的禁止类型的访问请求的管理表来发送由应用发出的访问请求。 当访问请求的访问目的地不被禁止时，访问控制向该驱动器发送访问请求。 通过这种布置，可以高速进行热备用切换处理。

公开(公告)号：US07257138B2

公开(公告)日：2007-08-14

申请号：US10608011

申请日：2003-06-30

申请人： Hiroshi Sato ,  Masahiro Aoki ,  Shinji Tsuji

发明人： Hiroshi Sato ,  Masahiro Aoki ,  Shinji Tsuji

IPC分类号： H01S5/00 ,  H01S3/04 ,  G02B6/12

CPC分类号： H01S5/0224 ,  B82Y20/00 ,  G02B2006/12097 ,  H01S5/02272 ,  H01S5/024 ,  H01S5/18308 ,  H01S5/22 ,  H01S5/34306 ,  H01S2301/176

摘要： The semiconductor optical device is mounted junction down on a mounting plate via the solder metal of the mounting plate. The electrode of the semiconductor optical device facing the mounting plate is partially coated with a dielectric film and the dielectric film is in contact with the solder metal on the mounting plate.The reaction between the semiconductor optical device and the solder metal of the mounting plate can be suppressed without deteriorating the thermal conductivity between the semiconductor optical device and the mounting plate. Therefore, it is possible to improve the reliability of the semiconductor optical device mounted in the junction down form since diffusion of the solder metal into the semiconductor can be prevented.

摘要翻译： 半导体光学器件通过安装板的焊料金属向下安装在安装板上。 面向安装板的半导体光学器件的电极部分地涂覆有电介质膜，并且电介质膜与安装板上的焊料金属接触。 可以抑制半导体光学器件与安装板的焊料金属之间的反应，而不会降低半导体光学器件和安装板之间的热导率。 因此，由于能够防止焊料金属向半导体的扩散，所以能够提高安装在结合形状下的半导体光学元件的可靠性。

公开(公告)号：US06822271B2

公开(公告)日：2004-11-23

申请号：US09485852

申请日：2000-02-17

申请人： Toshiyuki Mogi ,  Kazumi Kawamoto ,  Shinji Tsuji ,  Hitoshi Nakamura ,  Masato Shishikura ,  Satoru Kikuchi

发明人： Toshiyuki Mogi ,  Kazumi Kawamoto ,  Shinji Tsuji ,  Hitoshi Nakamura ,  Masato Shishikura ,  Satoru Kikuchi

IPC分类号： H01L2980

CPC分类号： G02B6/4224

摘要： In aiming at cost lowering of an optical module and an optical transmission apparatus and with the objective of providing a semiconductor light receiving element that has a good coherence with the other edge emitting/incidence type optical devices and is capable of performing the positioning easily and with a high accuracy, in the edge emitting/incidence type light receiving element in which the light absorbing layer 19 has been formed, the space region is formed so as to provide at least 100 &mgr;m2 of the marker detecting region 24, thereby facilitating detection of marker 23 on the optical device 26 and executing the positioning of the light receiving element with a high accuracy, the space region resulting from eliminating a part of the light absorbing layer 19 that absorbs the detection light of the light receiving element, the transmission amount of the detection light toward the marker detecting region that is parallel to a primary plane being equal to 30% or higher, the detection light having penetrated and transmitted the primary plane of the light receiving element.

摘要翻译： 为了降低光学模块和光学传输装置的成本，并且为了提供与其它边缘发射/入射型光学装置具有良好相干性的半导体光接收元件，并且能够容易地执行定位 在其中形成有光吸收层19的边缘发射/入射型光接收元件中形成高精度，形成空间区域，以便提供标记检测区域24的至少100微米2，从而便于 检测光学装置26上的标记23，并且以高精度执行光接收元件的定位，由消除吸收光接收元件的检测光的光吸收层19的一部分而产生的空间区域，透射 检测光朝着与主平面平行的标记检测区域的检测光量等于30％以上 n光穿过并透射光接收元件的主平面。

公开(公告)号：US06684627B2

公开(公告)日：2004-02-03

申请号：US09860481

申请日：2001-05-21

申请人： Tatsuji Mizuno ,  Shinji Tsuji ,  Masahiko Takeuchi ,  Kenji Kato ,  Takaaki Ito ,  Yoshitsugu Ogura ,  Tetsuo Kawamura ,  Mareo Kimura

发明人： Tatsuji Mizuno ,  Shinji Tsuji ,  Masahiko Takeuchi ,  Kenji Kato ,  Takaaki Ito ,  Yoshitsugu Ogura ,  Tetsuo Kawamura ,  Mareo Kimura

IPC分类号： F01N300

CPC分类号： B01D53/9454 ,  B01D53/9495 ,  F01N3/0842 ,  F01N3/206 ,  F01N13/009 ,  F01N13/011 ,  F01N2570/04 ,  F01N2610/01 ,  F02B2075/125 ,  F02M26/36 ,  F02M26/53 ,  Y02T10/22

摘要： The present invention is a method of solidifying sulfur component being the cause of “SOx poisoning” by use of a sulfur solidifier. The solidifier includes a metal element having a function of oxidizing the sulfur component and a basic metal element. And the solidifier solidifies sulfur component before exhaust gas flows into an NOx-occluding reduction-type exhaust purifying catalyst located on an exhaust path. Since the foregoing sulfur solidifier includes the above metal element and the basic metal element, it can effectively solidify the sulfur component which are the cause of the SOx poisoning, and ensure improvement in purification performance.

摘要翻译： 本发明是通过使用硫磺固化剂固化成为“SOx中毒”的原因的硫成分的方法。 固化剂包括具有氧化硫成分和碱性金属元素的功能的金属元素。 并且在废气流入位于排气路径上的NOx吸留还原型排气净化催化剂中之前，固化器固化硫成分。 由于上述硫磺固化剂含有上述金属元素和碱性金属元素，所以能够有效地固化作为SOx中毒的原因的硫成分，能够确保净化性能的提高。

公开(公告)号：US06440378B1

公开(公告)日：2002-08-27

申请号：US09581673

申请日：2000-06-16

申请人： Hirohito Hirata ,  Shinji Tsuji

发明人： Hirohito Hirata ,  Shinji Tsuji

IPC分类号： B01D5354

CPC分类号： B01D53/945 ,  B01D53/94 ,  B01J23/38 ,  B01J23/464 ,  B01J35/0013 ,  B01J37/0213 ,  Y02T10/22 ,  Y10S502/514

摘要： A noble metal composite colloid composed of a plurality of noble metals is constructed to be loaded on a porous oxide support. The noble metals are loaded in particles which are larger than the conventional grains in the atomic state. Thus, vapor pressure decreases and volatile components, such as PtO2, are suppressed from dislocation or diffusion. In addition, affinity of the noble metals with the support is improved, and are suppressed from moving on the support. Thus, nobel metal grain growth is suppressed, decreases in catalytic activity is minimized and durability is improved.

摘要翻译： 由多种贵金属构成的贵金属复合胶体被构造成负载在多孔氧化物载体上。 贵金属以原子状态装载在比常规晶粒大的颗粒中。 因此，蒸气压降低，挥发性组分（例如PtO 2）被抑制脱位或扩散。 此外，贵金属与载体的亲和性提高，并且被抑制在载体上移动。 因此，抑制了诺贝尔金属晶粒生长，催化活性降低到最小，耐久性提高。