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公开(公告)号：US08855160B2
公开(公告)日：2014-10-07
申请号：US13512595
申请日：2010-11-29
CPC分类号： H01S5/18 , H01L2224/73265 , H01L2924/10155 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02284 , H01S5/0267 , H01S5/0425 , H01S5/12 , H01S5/2224 , H01S5/4025 , H01S5/4031
摘要： Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure are provided, the first electrode includes an electrode (1) that is provided around one side region of the reflecting part located in the direction intersecting with the traveling direction of light guided through the waveguide layer and an electrode (2) provided around one side region of the cavity structure and the other side region of the reflecting part that are located in the direction parallel with the traveling direction of light guided through the waveguide layer, and the shape of the electrode (2) has different widths at at least two positions.
摘要翻译： 具体地，提供了一种水平腔表面发射激光器，其包括在半导体衬底上：空腔结构; 波导层; 以及反射部，其中，设置在所述半导体衬底上的沿着所述空腔结构的侧面区域和所述反射部分的第一电极和设置在所述空腔结构的主表面上的第二电极，所述第一电极包括电极（1） 设置在与通过波导层引导的光的行进方向相交的方向上的反射部的一个侧面区域和设置在该空腔结构的一个侧面区域的反射部的另一侧区域的电极（2） 位于与通过波导层引导的光的行进方向平行的方向的部分，并且电极（2）的形状在至少两个位置处具有不同的宽度。
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公开(公告)号：US20120230361A1
公开(公告)日：2012-09-13
申请号：US13512595
申请日：2010-11-29
IPC分类号： H01S5/18
CPC分类号： H01S5/18 , H01L2224/73265 , H01L2924/10155 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02284 , H01S5/0267 , H01S5/0425 , H01S5/12 , H01S5/2224 , H01S5/4025 , H01S5/4031
摘要： Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure are provided, the first electrode includes an electrode (1) that is provided around one side region of the reflecting part located in the direction intersecting with the traveling direction of light guided through the waveguide layer and an electrode (2) provided around one side region of the cavity structure and the other side region of the reflecting part that are located in the direction parallel with the traveling direction of light guided through the waveguide layer, and the shape of the electrode (2) has different widths at at least two positions.
摘要翻译： 具体地，提供了一种水平腔表面发射激光器，其包括在半导体衬底上：空腔结构; 波导层; 以及反射部，其中，设置在所述半导体衬底上的沿着所述空腔结构的侧面区域和所述反射部分的第一电极和设置在所述空腔结构的主表面上的第二电极，所述第一电极包括电极（1） 设置在与通过波导层引导的光的行进方向相交的方向上的反射部的一个侧面区域和设置在该空腔结构的一个侧面区域的反射部的另一侧区域的电极（2） 位于与通过波导层引导的光的行进方向平行的方向的部分，并且电极（2）的形状在至少两个位置处具有不同的宽度。
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3.发明申请SEMICONDUCTOR LASER ELEMENT, METHOD OF MANUFACTURING SEMICONDUCTOR LASER ELEMENT, AND OPTICAL MODULE 审中-公开半导体激光元件，制造半导体激光元件的方法和光学模块公开(公告)号：US20120327965A1
公开(公告)日：2012-12-27
申请号：US13521555
申请日：2010-02-02
申请人： Kazunori Shinoda , Koichiro Adachi , Shinji Tsuji , Masahiro Aoki
发明人： Kazunori Shinoda , Koichiro Adachi , Shinji Tsuji , Masahiro Aoki
CPC分类号： H01S5/125 , H01S5/0265 , H01S5/0267 , H01S5/187 , H01S5/2081
摘要： In order to provide a semiconductor laser element or an integrated optical device with high reliability, a horizontal-cavity semiconductor laser or an optical module includes a deeply dug DBR mirror serving as a cavity mirror, the deeply dug DBR mirror being composed of a material that is lattice-matched to a substrate and that has a band gap energy that does not absorb light emitted from an active layer.
摘要翻译： 为了提供具有高可靠性的半导体激光元件或集成光学器件，水平腔半导体激光器或光学模块包括用作腔镜的深钻DBR镜，深冲DBR镜由以下材料组成的材料组成： 与衬底晶格匹配，并且具有不吸收从有源层发射的光的带隙能量。
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公开(公告)号：US20080144683A1
公开(公告)日：2008-06-19
申请号：US11679349
申请日：2007-02-27
IPC分类号： H01S5/183
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/34306
摘要： The relationship between the reflectivity characteristic of a DBR layer(s), in which an InP layer and an InGaAlAs layer are laminated alternatively, and the optical absorption characteristic of the InGaAlAs layer, is a trade-off in a vertical cavity surface emitting laser on an InP substrate. The present invention applies a semiconductor DBR layer(s), in which an InP layer and an InGaAlAs-MQW (multi-quantum-wells) layer are laminated alternatively, in order to dissolve the above trade-off. The InGaAlAs-MQW layer is composed of InGaAlAs-wells and barriers. The InP layer is doped uniformly and the InGaAlAs-MQW layer has a structure in which at least a part thereof is doped.
摘要翻译： 其中InP层和InGaAlAs层交替层压的DBR层的反射率特性与InGaAlAs层的光吸收特性之间的关系是垂直腔表面发射激光器的折衷 InP衬底。 本发明应用半导体DBR层，其中InP层和InGaAlAs-MQW（多量子阱）层被交替层叠，以便解决上述折衷。 InGaAlAs-MQW层由InGaAlAs阱和阻挡层组成。 InP层被均匀地掺杂，并且InGaAlAs-MQW层具有其至少一部分被掺杂的结构。
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公开(公告)号：US20090129421A1
公开(公告)日：2009-05-21
申请号：US12028127
申请日：2008-02-08
IPC分类号： H01S5/323
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
摘要翻译： 在具有脊 - 波导结构的窗口区域的边缘发射激光器中，特别地，在具有低电流操作的短腔型激光器中，存在由于窗口的电流泄漏而使其工作电流增加的问题 一部分。 为了解决这个问题，在窗口区域中，插入n型衬底和p型覆层之间，掺杂Ru的半绝缘半导体层。 或者，引入Ru掺杂层和Fe掺杂层的堆叠结构。
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公开(公告)号：US07502403B2
公开(公告)日：2009-03-10
申请号：US11831986
申请日：2007-08-01
申请人： Kazunori Shinoda , Koichiro Adachi , Hideo Arimoto
发明人： Kazunori Shinoda , Koichiro Adachi , Hideo Arimoto
CPC分类号： G02B6/4246 , B82Y20/00 , G02B6/4214 , H01S5/005 , H01S5/02212 , H01S5/02248 , H01S5/02284 , H01S5/026 , H01S5/0267 , H01S5/028 , H01S5/1085 , H01S5/12 , H01S5/18 , H01S5/2224 , H01S5/2275 , H01S5/34306
摘要： In a horizontal cavity surface emitted laser, there is provided a device structure that is capable of obtaining a circular narrow-divergence emitted beam that is high in the optical coupling efficiency with a fiber. As a first means, there is provided a horizontal cavity surface emitting laser having a structure in which the plane mirror that is inclined by 45° and the bottom lens of the oval configuration are integrally structured. As a second means, there is provided a horizontal cavity surface emitting laser in which the mirror having the columnar front surface configuration inclined by 45° and the bottom lens of the columnar front surface configuration are integrally structured. Since the horizontal component and the vertical component of the laser beam can be shaped, independently, through the above means. As a result, it is possible to obtain the circular narrow-divergence emitted beam.
摘要翻译： 在水平腔表面发射激光器中，提供了一种能够获得与光纤的光耦合效率高的圆形窄发散射束的器件结构。 作为第一手段，提供了一种水平腔表面发射激光器，其具有倾斜45°的平面镜和椭圆形的底部透镜一体构造的结构。 作为第二装置，提供了一种水平腔表面发射激光器，其中具有倾斜45°的柱状前表面结构的反射镜和柱状前表面构造的底部透镜是一体构造的。 由于可以通过上述方式独立地对激光束的水平分量和垂直分量进行成形。 结果，可以获得圆形窄发散光束。
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公开(公告)号：US07636378B2
公开(公告)日：2009-12-22
申请号：US12028127
申请日：2008-02-08
IPC分类号： H01S5/00
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
摘要翻译： 在具有脊 - 波导结构的窗口区域的边缘发射激光器中，特别地，在具有低电流操作的短腔型激光器中，存在由于窗口的电流泄漏而使其工作电流增加的问题 一部分。 为了解决这个问题，在窗口区域中，插入n型衬底和p型覆层之间，掺杂Ru的半绝缘半导体层。 或者，引入Ru掺杂层和Fe掺杂层的堆叠结构。
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公开(公告)号：US07583714B2
公开(公告)日：2009-09-01
申请号：US11679349
申请日：2007-02-27
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/34306
摘要： The relationship between the reflectivity characteristic of a DBR layer(s), in which an InP layer and an InGaAlAs layer are laminated alternatively, and the optical absorption characteristic of the InGaAlAs layer, is a trade-off in a vertical cavity surface emitting laser on an InP substrate. The present invention applies a semiconductor DBR layer(s), in which an InP layer and an InGaAlAs-MQW (multi-quantum-wells) layer are laminated alternatively, in order to dissolve the above trade-off. The InGaAlAs-MQW layer is composed of InGaAlAs-wells and barriers. The InP layer is doped uniformly and the InGaAlAs-MQW layer has a structure in which at least a part thereof is doped.
摘要翻译： 其中InP层和InGaAlAs层交替层压的DBR层的反射率特性与InGaAlAs层的光吸收特性之间的关系是垂直腔表面发射激光器的折衷 InP衬底。 本发明应用半导体DBR层，其中InP层和InGaAlAs-MQW（多量子阱）层被交替层叠，以便解决上述折衷。 InGaAlAs-MQW层由InGaAlAs阱和阻挡层组成。 InP层被均匀地掺杂，并且InGaAlAs-MQW层具有其至少一部分被掺杂的结构。
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公开(公告)号：US20080266638A1
公开(公告)日：2008-10-30
申请号：US11831986
申请日：2007-08-01
申请人： Kazunori Shinoda , Koichiro Adachi , Hideo Arimoto
发明人： Kazunori Shinoda , Koichiro Adachi , Hideo Arimoto
CPC分类号： G02B6/4246 , B82Y20/00 , G02B6/4214 , H01S5/005 , H01S5/02212 , H01S5/02248 , H01S5/02284 , H01S5/026 , H01S5/0267 , H01S5/028 , H01S5/1085 , H01S5/12 , H01S5/18 , H01S5/2224 , H01S5/2275 , H01S5/34306
摘要： In a horizontal cavity surface emitted laser, there is provided a device structure that is capable of obtaining a circular narrow-divergence emitted beam that is high in the optical coupling efficiency with a fiber. As a first means, there is provided a horizontal cavity surface emitting laser having a structure in which the plane mirror that is inclined by 45° and the bottom lens of the oval configuration are integrally structured. As a second means, there is provided a horizontal cavity surface emitting laser in which the mirror having the columnar front surface configuration inclined by 45° and the bottom lens of the columnar front surface configuration are integrally structured. Since the horizontal component and the vertical component of the laser beam can be shaped, independently, through the above means. As a result, it is possible to obtain the circular narrow-divergence emitted beam.
摘要翻译： 在水平腔表面发射激光器中，提供了一种能够获得与光纤的光耦合效率高的圆形窄发散射束的器件结构。 作为第一手段，提供了一种水平腔表面发射激光器，其具有倾斜45°的平面镜和椭圆形的底部透镜一体构造的结构。 作为第二装置，提供了一种水平腔表面发射激光器，其中具有倾斜45°的柱状前表面结构的反射镜和柱状前表面构造的底部透镜是一体构造的。 由于可以通过上述方式独立地对激光束的水平分量和垂直分量进行成形。 结果，可以获得圆形窄发散光束。
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公开(公告)号：US06973226B2
公开(公告)日：2005-12-06
申请号：US10614779
申请日：2003-07-09
申请人： Hiroshi Sato , Akira Taike , Kazunori Shinoda , Shinji Tsuji
发明人： Hiroshi Sato , Akira Taike , Kazunori Shinoda , Shinji Tsuji
CPC分类号： G02B6/12007 , G02B6/1228 , G02B6/4215 , G02B6/4265 , G02B6/4274 , G02B2006/12078 , H01S5/0265 , H01S5/12
摘要： An optical transmission device suitable for a high-speed and large-capacity optical transmission system. An optoelectronic waveguiding device including an optical waveguide layer and cladding layers each having a larger band gap than that of the optical waveguide are deposited above and beneath the optical waveguide layer formed on a semiconductor substrate. The waveguide and cladding layers comprise optical waveguides each having a MQW structure in a direction of a light propagation axis of the optical waveguide layer. Among these optical waveguides, there exists first and second optical waveguides, whose layer structures may be mutually different. The optoelectronic waveguiding device maybe characterized in that an optical waveguide made of a bulk crystal exists in a connection part between the MQW structure waveguides each having a different layer structure. The specific connected optoelectronic waveguiding device elements may include semiconductor lasers, modulators and/or amplifiers.
摘要翻译： 适用于高速大容量光传输系统的光传输装置。 在半导体衬底上形成的光波导层的上方和下方淀积包括光波导层和各自具有比光波导的带隙大的覆层的光电波导装置。 波导和包层包括光波导，每个光波导在光波导层的光传播轴的方向上具有MQW结构。 在这些光波导中，存在第一和第二光波导，其层结构可以相互不同。 光电波导装置的特征在于，由块状晶体制成的光波导存在于具有不同层结构的MQW结构波导之间的连接部分中。 特定连接的光电波导器件元件可以包括半导体激光器，调制器和/或放大器。
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