公开(公告)号：US08558373B2

公开(公告)日：2013-10-15

申请号：US13466653

申请日：2012-05-08

申请人： Kazuya Kodani ,  Makoto Takeda

发明人： Kazuya Kodani ,  Makoto Takeda

IPC分类号： H01L23/36

CPC分类号： H01L23/467 ,  F28F3/048 ,  H01L23/367 ,  H01L23/427 ,  H01L2924/0002 ,  H05K7/20909 ,  H01L2924/00

摘要： According to one embodiment, a heatsink includes a base and heat radiation fins placed on one of surfaces of the base and arranged in parallel to each other with a submillimeter narrow pitch. Each of the multiple heat radiation fins has a submillimeter thickness, a length in a width direction of 60 mm or smaller, and a height of 40 mm or smaller. The heatsink assembly may be constituted by allaying a plurality of the heatsinks and thermally connecting each of the heatsinks to each other using a heat transport device.

摘要翻译： 根据一个实施例，散热器包括放置在基座的一个表面上的基座和散热翅片，并以亚毫米窄的间距彼此平行地布置。 多个散热翅片中的每一个具有亚毫米厚度，宽度方向上的长度为60mm以下，高度为40mm以下。 散热器组件可以通过使多个散热器相互连接并且使用热传输装置将每个散热器彼此热连接来构成。

公开(公告)号：US20130043594A1

公开(公告)日：2013-02-21

申请号：US13572553

申请日：2012-08-10

申请人： Yo Sasaki ,  Atsushi Yamamoto ,  Kazuya Kodani ,  Yuji Hisazato ,  Takashi Togasaki ,  Hideaki Kitazawa

发明人： Yo Sasaki ,  Atsushi Yamamoto ,  Kazuya Kodani ,  Yuji Hisazato ,  Takashi Togasaki ,  Hideaki Kitazawa

IPC分类号： H01L21/50 ,  H01L23/482

CPC分类号： C22C9/02 ,  C22C28/00 ,  H01L23/3735 ,  H01L23/488 ,  H01L23/562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/83825 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/15747 ,  H01L2924/351 ,  H01L2924/00

摘要： According to one embodiment, between the mounting substrate and the semiconductor chip, there is a joint support layer including a metal or its alloy selected from the group of Cu, Al, Ag, Ni, Cr, Zr and Ti and a melt layer laminated across the joint support layer, and formed of a metal selected from the group of Sn, Zn and In or of an alloy of at least two metals selected from the same metals. The process of joining the mounting substrate and the semiconductor chip includes intervening a joining layer which is formed, at least for its outermost layer, by the melt layer, maintaining the temperature to be higher than the melting point of the melt layer, then forming an alloy layer which has a higher melting point than the melt layer by liquid phase diffusion.

摘要翻译： 根据一个实施例，在安装基板和半导体芯片之间，存在包括选自Cu，Al，Ag，Ni，Cr，Zr和Ti的金属或其合金的接合支撑层，以及层压的熔融层 接合支撑层，并且由选自Sn，Zn和In的金属或选自相同金属的至少两种金属的合金形成。 连接安装基板和半导体芯片的工艺包括至少在其最外层由熔融层形成的接合层，将熔体层的温度维持在高于熔融层的熔点，然后形成 合金层通过液相扩散具有比熔体层更高的熔点。

公开(公告)号：US20050230807A1

公开(公告)日：2005-10-20

申请号：US10870061

申请日：2004-06-18

申请人： Kazuya Kodani ,  Nobuhiro Shingai

发明人： Kazuya Kodani ,  Nobuhiro Shingai

IPC分类号： H01L25/07 ,  H01L21/60 ,  H01L23/049 ,  H01L23/42 ,  H01L23/482 ,  H01L23/485 ,  H01L25/18

CPC分类号： H01L24/06 ,  H01L23/049 ,  H01L23/42 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/4943 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/2076 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： A power semiconductor module comprises a wide band gap semiconductor chip having its surface with an electrode provided thereon, and more than one bonding wire which is connected to an edge portion of the electrode directly or indirectly via an electrode pad. The electrode and the electrode pad have their thickness values that are specifically set in such a way as to obtain a conduction area ratio equal to or greater than a conduction area ratio of the wide band gap semiconductor chip in the case where a respective one of the electrode and electrode pad is made of aluminum while letting a total thickness value of the electrode and the electrode pad measure ten micrometers (10 μm).

摘要翻译： 功率半导体模块包括具有设置在其上的电极的表面的宽带隙半导体芯片，以及多个通过电极焊盘直接或间接连接到电极的边缘部分的接合线。 电极和电极焊盘的厚度值具体设定为使得在宽带隙半导体芯片的导通面积比等于或大于导通面积比的情况下， 电极和电极焊盘由铝制成，同时使电极和电极焊盘的总厚度测量为十微米（10um）。

公开(公告)号：US07105932B2

公开(公告)日：2006-09-12

申请号：US10870061

申请日：2004-06-18

申请人： Kazuya Kodani ,  Nobuhiro Shingai

发明人： Kazuya Kodani ,  Nobuhiro Shingai

IPC分类号： H01L29/15 ,  H01L31/256

CPC分类号： H01L24/06 ,  H01L23/049 ,  H01L23/42 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/4943 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/2076 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： A power semiconductor module comprises a wide band gap semiconductor chip having its surface with an electrode provided thereon, and more than one bonding wire which is connected to an edge portion of the electrode directly or indirectly via an electrode pad. The electrode and the electrode pad have their thickness values that are specifically set in such a way as to obtain a conduction area ratio equal to or greater than a conduction area ratio of the wide band gap semiconductor chip in the case where a respective one of the electrode and electrode pad is made of aluminum while letting a total thickness value of the electrode and the electrode pad measure ten micrometers (10 μm).

摘要翻译： 功率半导体模块包括具有设置在其上的电极的表面的宽带隙半导体芯片，以及多个通过电极焊盘直接或间接连接到电极的边缘部分的接合线。 电极和电极焊盘的厚度值具体设定为使得在宽带隙半导体芯片的导通面积比等于或大于导通面积比的情况下， 电极和电极焊盘由铝制成，同时使电极和电极焊盘的总厚度测量为十微米（10um）。

公开(公告)号：US6166402A

公开(公告)日：2000-12-26

申请号：US335702

申请日：1999-06-18

申请人： Kazuya Kodani ,  Toshiaki Matsumoto ,  Masayuki Tobita

发明人： Kazuya Kodani ,  Toshiaki Matsumoto ,  Masayuki Tobita

IPC分类号： H01L29/744 ,  H01L21/52 ,  H01L23/48 ,  H01L29/74 ,  H01L31/111

CPC分类号： H01L24/72 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/1301 ,  H01L2924/30107 ,  H01L2924/00

摘要： A double circular gate conductor 9 comprises a first circular gate conductor 7 connected to a gate electrode 2a, a second circular gate conductor 8, and a connecting conductor which connects the first circular gate conductor 7 and the second circular gate conductor 8, and is configured so as to equalize the voltage drop due to self-inductance or mutual inductance between the first circular gate conductor 7, second circular gate conductor 8 and cathode post electrode 4. In this manner it is possible to guarantee more or less uniform parallel inductance over the surface of the element.

摘要翻译： 双圆形栅极导体9包括连接到栅电极2a，第二圆形栅极导体8和连接第一圆形栅极导体7和第二圆形栅极导体8的连接导体的第一圆形栅极导体7，并被配置 以便均衡由于第一圆形栅极导体7，第二圆形栅极导体8和阴极柱状电极4之间的自感或互感引起的电压降。以这种方式，可以保证或多或少均匀的并联电感 表面的元素。

公开(公告)号：US07129692B2

公开(公告)日：2006-10-31

申请号：US11255976

申请日：2005-10-24

申请人： Ichiro Omura ,  Tomokazu Domon ,  Kazuya Kodani

发明人： Ichiro Omura ,  Tomokazu Domon ,  Kazuya Kodani

IPC分类号： G01R33/00 ,  G01R1/20 ,  H01R15/18

CPC分类号： G01R19/0092 ,  G01R15/181 ,  G01R31/2644 ,  G01R31/2884 ,  H01L2224/0603 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01033

摘要： A current detection equipment comprises a first coil and a second coil connected in series with the first coil. The current detection equipment is capable of detecting a current flowing through an object which is provided between the first and second coils or provided in a vicinity of the first or second coil. Each of the first and second coils having first conductive patterns provided on a surface of a substrate, a second conductive patterns provided on a back of the substrate and connecting parts which connect the first and second conductive patterns. A semiconductor device including the current detection equipment to measure the current flowing in a semiconductor element is also proposed.

公开(公告)号：US20060038552A1

公开(公告)日：2006-02-23

申请号：US11255976

申请日：2005-10-24

申请人： Ichiro Omura ,  Tomokazu Domon ,  Kazuya Kodani

发明人： Ichiro Omura ,  Tomokazu Domon ,  Kazuya Kodani

IPC分类号： G01R15/18

CPC分类号： G01R19/0092 ,  G01R15/181 ,  G01R31/2644 ,  G01R31/2884 ,  H01L2224/0603 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01033

摘要： A current detection equipment comprises a first coil and a second coil connected in series with the first coil. The current detection equipment is capable of detecting a current flowing through an object which is provided between the first and second coils or provided in a vicinity of the first or second coil. Each of the first and second coils having first conductive patterns provided on a surface of a substrate, a second conductive patterns provided on a back of the substrate and connecting parts which connect the first and second conductive patterns. A semiconductor device including the current detection equipment to measure the current flowing in a semiconductor element is also proposed.