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公开(公告)号：US5770887A
公开(公告)日：1998-06-23
申请号：US320263
申请日：1994-10-11
CPC分类号： H01L33/32 , C30B25/02 , C30B29/406 , H01L33/0075 , H01L33/0079
摘要： A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 .mu.m, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.
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公开(公告)号：US5810925A
公开(公告)日：1998-09-22
申请号：US649492
申请日：1996-05-17
CPC分类号： H01L33/32 , C30B25/02 , C30B29/406 , H01L33/0075 , H01L33/0079
摘要： A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 .mu.m, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.
摘要翻译： 双晶X射线摇摆曲线半峰全宽为5〜250秒，厚度为80μm以上的GaN单晶，具有优异品质的GaN单晶的制造方法和 足够的厚度允许其用作基板和具有高亮度和高可靠性的半导体发光元件，其包括作为基板的具有优异质量和/或足够厚度的GaN单晶，其允许其用作基板。
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公开(公告)号：US06734515B1
公开(公告)日：2004-05-11
申请号：US09787502
申请日：2001-03-16
申请人： Kazuyuki Tadatomo , Hiroaki Okagawa , Youichiro Ohuchi , Masahiro Koto , Kazumasa Hiramatsu , Yutaka Hamamura , Sumito Shimizu
发明人： Kazuyuki Tadatomo , Hiroaki Okagawa , Youichiro Ohuchi , Masahiro Koto , Kazumasa Hiramatsu , Yutaka Hamamura , Sumito Shimizu
IPC分类号： H01L2714
CPC分类号： H01L31/0304 , H01L31/022408 , H01L31/1035 , H01L31/108 , Y02E10/544
摘要： A semiconductor light receiving element having a light receiving layer (1) formed from a GaN group semiconductor, and an electrode (2) formed on one surface of the light receiving layer as a light receiving surface (1a) in such a way that the light (L) can enter the light receiving layer is provided. When the light receiving element is of a Schottky barrier type, the aforementioned electrode (2) contains at least a Schottky electrode, which is formed in such a way that, on the light receiving surface (1a), the total length of the boundary lines between areas covered with the Schottky electrode and exposed areas is longer than the length of the outer periphery of the light receiving surface (1a). In addition, when the light receiving element is of a photoconductive type, the aforementioned light receiving layer (1) is a first conductivity type i layer, and the aforementioned electrode (2) is an ohmic electrode of one polarity, and an ohmic electrode of the other polarity is formed directly or via a first conductivity type and low resistance GaN group semiconductor layer on the other surface of the light receiving layer (1).
摘要翻译： 具有由GaN族半导体形成的受光层（1）的半导体光接收元件和形成在光接收层的一个表面上的光接收表面（1a）的电极（2），使得光 （L）可以进入光接收层。 当受光元件为肖特基势垒型时，上述电极（2）至少含有肖特基电极，其形成为在受光面（1a）上形成的边界线的总长度 在被肖特基电极覆盖的区域和暴露区域之间的距离比受光面（1a）的外周长度长。 此外，当光接收元件是光电导型时，上述光接收层（1）是第一导电型i层，上述电极（2）是一极性欧姆电极，欧姆电极 另一极性直接或经由光接收层（1）的另一个表面上的第一导电类型和低电阻GaN族半导体层形成。
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公开(公告)号：US5793061A
公开(公告)日：1998-08-11
申请号：US703482
申请日：1996-08-28
CPC分类号： H01L33/32
摘要： A group-III nitride based light emitter such as LED and LD, which has a double heterostructure and which comprises a diffusion suppressive layer between a p-type cladding layer and an active layer. The diode having a diffusion suppressive layer of the present invention has higher luminous intensity, greater forward voltage, and longer lifetime than the conventional diodes.
摘要翻译： 一种III族氮化物基发光体，例如LED和LD，其具有双异质结构，并且在p型包覆层和有源层之间包括扩散抑制层。 具有本发明的扩散抑制层的二极管具有比常规二极管更高的发光强度，更大的正向电压和更长的寿命。
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5.发明授权GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof 失效具有低位错密度的GAN基团晶体基体，其用途及其制造方法公开(公告)号：US06225650B1
公开(公告)日：2001-05-01
申请号：US09046638
申请日：1998-03-24
申请人： Kazuyuki Tadatomo , Hiroaki Okagawa , Youichiro Ohuchi , Keiji Miyashita , Kazumasa Hiramatsu , Nobuhiko Sawaki , Katsunori Yahashi , Takumi Shibata
发明人： Kazuyuki Tadatomo , Hiroaki Okagawa , Youichiro Ohuchi , Keiji Miyashita , Kazumasa Hiramatsu , Nobuhiko Sawaki , Katsunori Yahashi , Takumi Shibata
IPC分类号： H01L310328
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02483 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L33/007 , H01L33/025 , H01S5/0213 , H01S5/22 , H01S5/32341 , H01S2301/173 , H01S2304/12
摘要： A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.
摘要翻译： 一种GaN基晶体基底构件，包括基底衬底，掩模层，部分地覆盖所述基底衬底的表面以产生掩模区域，以及生长在其上的覆盖掩模层的GaN组晶体层，其部分地直接接触 基底的非掩蔽区域，半导体元件的用途，其制造方法以及位错线的控制方法。 本发明的制造方法能够使位于掩模区域或非掩蔽区域以上的GaN族晶体层的一部分具有低的位错密度。
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公开(公告)号：US5631475A
公开(公告)日：1997-05-20
申请号：US498752
申请日：1995-07-06
IPC分类号： H01L29/205 , H01L21/20 , H01L21/205 , H01L33/12 , H01L33/30 , H01L33/40 , H01L33/00
摘要： A semiconductor light emitting element comprising a light emitting part comprising an AlGaInP active layer and a AlGaInP cladding layer, which is formed on a GaAs substrate, and an AlGaAs layer and a Ga.sub.x In.sub.1-x P layer (0.7.ltoreq.x.ltoreq.1.0) deposited in this order on said light emitting part, wherein said Ga.sub.x In.sub.1-x P layer has a thickness of not more than 1.0 .mu.m. According to the present invention, absorption of the emitted light by an electrode contact layer and the occurrence of an interfacial distortion between the electrode contact layer and the layer thereunder can be suppressed, and a semiconductor light emitting element permitting easy production thereof and having a high luminance and a long service life can be provided.
摘要翻译： 一种半导体发光元件，包括形成在GaAs衬底上的AlGaInP有源层和AlGaInP包层的发光部分，以及AlGaAs层和GaxIn1-xP层（0.7≤x≤1.0） 以上述顺序沉积在所述发光部分上，其中所述GaxIn1-xP层的厚度不大于1.0μm。 根据本发明，可以抑制由电极接触层吸收发射的光，并且可以抑制电极接触层与其下面的层之间的界面变形的发生，并且可以容易地制造并具有高的半导体发光元件 可以提供亮度和长的使用寿命。
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公开(公告)号：US06794210B2
公开(公告)日：2004-09-21
申请号：US10703330
申请日：2003-11-07
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02658 , H01L33/007 , H01L33/0075
摘要： The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.
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8.发明授权Method for growing GaN compound semiconductor crystal and semiconductor substrate 失效生长GaN化合物半导体晶体和半导体衬底的方法公开(公告)号：US06700179B1
公开(公告)日：2004-03-02
申请号：US09937337
申请日：2001-12-18
IPC分类号： H01L2922
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02658 , H01L33/007 , H01L33/0075
摘要： The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.
摘要翻译： 用抗表面活性剂材料改变形成在基板11上的基板11或GaN基化合物半导体膜12的表面的状态，并通过气相生长法提供GaN族化合物半导体材料，以形成点状结构 的半导体膜12的表面上的GaN族化合物半导体，并且继续生长直到点结构接合并且表面变平坦。 在这种情况下，点状结构在抗表面活性剂区域上形成空腔21时连接。 从底层延伸的位错线22被空腔21阻挡，因此可以减小外延膜表面的位错密度。 结果，可以在外延生长中不使用掩模材料来降低GaN族化合物半导体晶体的位错密度，由此可以获得高质量的外延膜。
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公开(公告)号：US07179667B2
公开(公告)日：2007-02-20
申请号：US10380933
申请日：2001-09-17
CPC分类号： C30B29/403 , C30B25/18 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/0265
摘要： As shown in FIG. 1(a), substrate 1 having a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape suppresses growth in the lateral direction and promotes growth in the C axis direction, thereby affording a base surface capable of forming a facet plane. Thus, as shown in FIG. 1(b), a crystal having a facet plane is grown in a convex part, and a crystal is also grown in a concave part. When the crystal growth is continued, the films grown from the convex part and the concave part are joined in time to cover a concavo-convex surface and become flat as shown in FIG. 1(c). In this case, an area having a low a dislocation density is formed in the upper part of the convex part where facet plane was formed, and the prepared film has high quality.
摘要翻译： 如图所示。 如图1（a）所示，使用具有凹凸表面的生长面的基板1。 当GaN基晶体使用该衬底气相生长时，凹凸形状抑制横向生长并促进C轴方向的生长，从而提供能够形成小平面的基表面。 因此，如图1所示。 如图1（b）所示，具有小平面的晶体生长在凸部中，并且晶体也在凹部中生长。 当晶体生长持续时，如图3所示，从凸部和凹部生长的膜及时接合以覆盖凹凸表面并变平。 1（c）。 在这种情况下，在形成有小平面的凸部的上部形成有位错密度低的区域，所制备的膜具有高质量。
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10.发明授权Semiconductor light emitting element with In GaAlP active layer of specified thickness 失效具有规定厚度的InGaAlP有源层的半导体发光元件
公开(公告)号：US5710440A
公开(公告)日：1998-01-20
申请号：US600295
申请日：1996-02-12
CPC分类号： H01L33/30 , H01L33/14 , H01L33/305
摘要： A semiconductor light emitting element comprising an n-type semiconductor substrate and a light emitting part comprising an n-type cladding layer composed of an InGaAlP compound semiconductor material, an active layer and a p-type cladding layer formed in that order from the substrate side by double heterojunction, wherein said semiconductor light emitting element satisfies at least one of the following conditions: A. the thickness of said active layer being greater than 0.75 .mu.m and not more than 1.5 .mu.m, and B. the thickness of said p-type cladding layer being 0.5 .mu.m-2.0 .mu.m. According to the light emitting element of the present invention, an overflow of electron into the p-type cladding layer can be suppressed by setting the thickness of the active layer and the p-type cladding layer to fall within the above-mentioned specific ranges, as a result of which the element shows luminous efficiency peaked within the specified range.
摘要翻译： 一种半导体发光元件，包括n型半导体衬底和发光部分，所述发光部分包括由InGaAlP化合物半导体材料，有源层和p型覆层组成的n型覆层，所述n型覆盖层从衬底侧依次形成 通过双异质结，其中所述半导体发光元件满足以下条件中的至少一个：A.所述有源层的厚度大于0.75μm且不大于1.5μm，并且B.所述p- 型包层为0.5μm-2.0μm。 根据本发明的发光元件，通过将有源层和p型覆盖层的厚度设定在上述特定范围内，可以抑制电子向p型覆层的溢出， 结果，该元件显示在特定范围内达到峰值的发光效率。
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