公开(公告)号：US06225650B1

公开(公告)日：2001-05-01

申请号：US09046638

申请日：1998-03-24

申请人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Youichiro Ohuchi ,  Keiji Miyashita ,  Kazumasa Hiramatsu ,  Nobuhiko Sawaki ,  Katsunori Yahashi ,  Takumi Shibata

发明人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Youichiro Ohuchi ,  Keiji Miyashita ,  Kazumasa Hiramatsu ,  Nobuhiko Sawaki ,  Katsunori Yahashi ,  Takumi Shibata

IPC分类号： H01L310328

CPC分类号： H01L33/32 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02483 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/025 ,  H01S5/0213 ,  H01S5/22 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/12

摘要： A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.

摘要翻译： 一种GaN基晶体基底构件，包括基底衬底，掩模层，部分地覆盖所述基底衬底的表面以产生掩模区域，以及生长在其上的覆盖掩模层的GaN组晶体层，其部分地直接接触 基底的非掩蔽区域，半导体元件的用途，其制造方法以及位错线的控制方法。 本发明的制造方法能够使位于掩模区域或非掩蔽区域以上的GaN族晶体层的一部分具有低的位错密度。

公开(公告)号：US4816878A

公开(公告)日：1989-03-28

申请号：US929783

申请日：1986-11-13

申请人： Hiroyuki Kano ,  Masafumi Hashimoto ,  Nobuhiko Sawaki

发明人： Hiroyuki Kano ,  Masafumi Hashimoto ,  Nobuhiko Sawaki

IPC分类号： H01L29/80 ,  H01L29/15 ,  H01L29/205 ,  H01L29/68 ,  H01L29/86 ,  H01L27/12 ,  H01L29/161

CPC分类号： H01L29/86 ,  H01L29/155

摘要： A semiconductor device having a superlattice structure, which comprises at least one unit structure including first and third semiconductor layers as quantum well layers, and a second semiconductor layer as a barrier layer, which are arranged alternately on each other is described. The first semiconductor layer has a higher impurity concentration than the third semiconductor layer and has a quantum energy level determined by its thickness. The third semiconductor layer is of a thickness having quantum energy levels, one of which is lower than that of the first semiconductor layer and the second of which is equal to or higher than that of the first semiconductor layer. The second semiconductor layer is of a thickness which allows electrons existing at the second quantum energy level of the third semiconductor layer to transfer easily from the third to the first semiconductor layer. An increase in voltage applied to the semiconductor device causes electrons to transfer to the first semiconductor layer through the second quantum energy level of the third semiconductor layer to reduce the mobility of electrons in the first semiconductor layer, thus causing the semiconductor device to develop a negative resistance.

摘要翻译： 描述了具有超晶格结构的半导体器件，其包括至少一个包括作为量子阱层的第一和第三半导体层以及彼此交替布置的阻挡层的第二半导体层的单元结构。 第一半导体层具有比第三半导体层更高的杂质浓度，并且具有由其厚度确定的量子能级。 第三半导体层具有量子能级的厚度，其中一个低于第一半导体层的厚度，第二半导体层的厚度等于或高于第一半导体层的厚度。 第二半导体层的厚度允许存在于第三半导体层的第二量子能级的电子容易地从第三半导体层传输到第一半导体层。 施加到半导体器件的电压的增加导致电子通过第三半导体层的第二量子能级转移到第一半导体层，以降低第一半导体层中的电子的迁移率，从而使得半导体器件产生负的 抵抗性。

公开(公告)号：US06927423B2

公开(公告)日：2005-08-09

申请号：US10443970

申请日：2003-05-23

申请人： Nobuhiko Sawaki ,  Yoshio Honda

发明人： Nobuhiko Sawaki ,  Yoshio Honda

IPC分类号： H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01L21/205 ,  H01L29/22

CPC分类号： H01J9/022 ,  H01J1/308

摘要： A mask layer with an opening is formed on a main surface of a silicon substrate, which is exposed in the opening. Then, a hexagonal pyramidal island-shaped portion is formed from a first semiconductor nitride in the opening to complete a semiconductor element structure.

摘要翻译： 在开口部露出的硅基板的主面上形成具有开口部的掩模层。 然后，在开口中由第一半导体氮化物形成六角锥形岛状部分，以完成半导体元件结构。

公开(公告)号：US08338853B2

公开(公告)日：2012-12-25

申请号：US11990924

申请日：2006-08-24

申请人： Akira Kiyama ,  Rentaro Mori ,  Hiroya Inaoka ,  Masayuki Ichiyanagi ,  Nobuhiko Sawaki ,  Yoshio Honda ,  Yasuyuki Yanase

发明人： Akira Kiyama ,  Rentaro Mori ,  Hiroya Inaoka ,  Masayuki Ichiyanagi ,  Nobuhiko Sawaki ,  Yoshio Honda ,  Yasuyuki Yanase

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L33/16 ,  H01L33/24

摘要： Light emitters and substrates for light emitters are provided to improve light-emitting efficiency and achieve improvement in crystal quality. A light emitter includes a single-crystal substrate, an oriented microcrystal layer, and a light-emitting layer. The light-emitting layer is made of a nitride semiconductor by means of a vapor-phase growth method. In the oriented microcrystal layer, the proportion of crystals, in which one of crystal axes is oriented with respect to the single-crystal substrate, is 5-9 out of 10 crystals. An average diameter of the crystal grains of the respective crystals, contained in the oriented microcrystal layer, is 1-1,000 nm. A light emitter may be equipped with an intermediate layer, a light-emitting layer, and a clad layer. These layers are formed on the oriented microcrystal layer by a vapor-phase growth method. The light-emitting layer contains microcrystal grains whose average grain diameter is 1-1,000 nm.

摘要翻译： 提供用于发光体的发光体和基板，以提高发光效率，提高晶体质量。 光发射器包括单晶衬底，定向微晶层和发光层。 发光层通过气相生长法由氮化物半导体制成。 在取向微晶层中，晶轴相对于单晶基板取向的晶体的比例为10〜9中的5〜9个。 包含在取向微晶层中的各晶体的晶粒的平均直径为1-1000nm。 光发射器可以配备有中间层，发光层和覆盖层。 这些层通过气相生长法在取向微晶层上形成。 发光层含有平均粒径为1-1000nm的微晶粒。

公开(公告)号：US06844572B2

公开(公告)日：2005-01-18

申请号：US10393111

申请日：2003-03-18

申请人： Nobuhiko Sawaki ,  Norikatsu Koide ,  Kensaku Yamamoto

发明人： Nobuhiko Sawaki ,  Norikatsu Koide ,  Kensaku Yamamoto

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01L33/34 ,  H01L33/42 ,  H01L33/00 ,  H01L21/00 ,  H01S5/00

CPC分类号： H01L33/20 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/156 ,  H01L33/007

摘要： A light emitting semiconductor device includes a silicon substrate and a compound semiconductor layer disposed on a main plane of the silicon substrate and represented by a general expression InxGayAlzN, wherein x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1. The silicon substrate has a groove having an oblique plane corresponding to a plane inclined relative to the substrate's main plane by 62 degrees or a plane inclined relative to the inclined plane in any direction within three degrees, and on the oblique plane a plurality or quantum well layers different in thickness are stacked.

摘要翻译： 发光半导体器件包括硅衬底和设置在硅衬底的主平面上并由通式InxGayAlzN表示的化合物半导体层，其中x + y + z =1,0,0≤x≤1,0< = y <= 1，0 <= z <= 1。 所述硅基板具有与所述基板的主平面相对倾斜62度的倾斜平面的倾斜面，或相对于所述倾斜面在三度以内的任意方向倾斜的面，在所述倾斜面上形成多个或量子阱 层叠不同厚度的层。

公开(公告)号：US4855249A

公开(公告)日：1989-08-08

申请号：US272081

申请日：1988-03-16

申请人： Isamu Akasaki ,  Nobuhiko Sawaki

发明人： Isamu Akasaki ,  Nobuhiko Sawaki

IPC分类号： C30B29/40 ,  C30B25/02 ,  C30B29/38 ,  H01L21/20 ,  H01L21/205 ,  H01L33/16 ,  H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/0037 ,  Y10S117/913 ,  Y10S148/025 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/11 ,  Y10S148/113 ,  Y10S438/967

摘要： In organometallic vapor phase hetero-epitaxial processes for growing Al.sub.x Ga.sub.1-x N films on a sapphire substrate, the substrate is subjected to a preheat treatment of brief duration, such as less than 2 minutes, at relatively low temperatures in an atmosphere comprising Al-containing organometallic compound, NH.sub.3 and H.sub.2 gases, prior to the hetero epitaxial growth of Al.sub.x Ga.sub.1-x N films. Thus, single crystalline Al.sub.x Ga.sub.1-x N layers of high uniformity and high quality having smooth, flat surfaces are provided. Multi-layers grown according to the process of the invention are free from cracks and have preferable UV or blue light emission properties.

摘要翻译： 在用于在蓝宝石衬底上生长Al x Ga 1-x N膜的有机金属气相异质外延工艺中，在包含含Al有机金属的气氛中，在较低温度下对衬底进行短暂持续时间，例如小于2分钟的预热处理 化合物，NH3和H2I气体，在AlxGal-xN膜的异质外延生长之前。 因此，提供了具有光滑平坦表面的高均匀性和高质量的单晶Al x Ga 1-x N层。 根据本发明的方法生长的多层没有裂纹并且具有优选的UV或蓝色发光性质。

公开(公告)号：US20090250711A1

公开(公告)日：2009-10-08

申请号：US11990924

申请日：2006-08-24

申请人： Akira Kiyama ,  Rentaro Mori ,  Hiroya Inaoka ,  Masayuki Ichiyanagi ,  Nobuhiko Sawaki ,  Yoshio Honda ,  Yasuyuki Yanase

发明人： Akira Kiyama ,  Rentaro Mori ,  Hiroya Inaoka ,  Masayuki Ichiyanagi ,  Nobuhiko Sawaki ,  Yoshio Honda ,  Yasuyuki Yanase

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L33/16 ,  H01L33/24

摘要： To also intend the improvement of light-emitting efficiency by microcrystallizing light-emitting layer while utilizing vapor-phase growth method that is advantageous for improving crystal quality, and the like.4 for forming light-emitting layer comprises a substrate single-crystal substrate 1, and an oriented fine crystal layer 3 being formed on the single-crystal substrate 4. One of the crystal axes of respective crystals, which constitute the oriented microcrystal layer 3, is oriented in a specific direction with respect to the single-crystal substrate 1, and an average of the crystal grain diameters of the respective crystals, which constitute the oriented microcrystal layer 3, is adapted to being 1-1,000 nm. A light emitter 8 is equipped with an intermediate layer 5, a light-emitting layer 6 and a clad layer 7, which are formed on the oriented microcrystal layer 3 of this substrate 4 for forming light-emitting layer by means of vapor-phase growth method, respectively, and which comprise a nitride semiconductor. The light-emitting layer 6 is constituted of microcrystal grains whose average grain diameter is 1-1,000 nm.

摘要翻译： 另外，为了提高发光效率，也可以通过利用气相生长法，通过微结晶发光层来提高发光效率，有利于提高晶体质量等。 用于形成发光层的图4包括基板单晶基板1和形成在单晶基板4上的取向微细晶体层3.构成取向微晶层3的各晶体的晶轴之一， 相对于单晶衬底1在特定方向上取向，并且构成取向微晶层3的各晶体的晶粒直径的平均值适应为1-1000nm。 发光体8配置有中间层5，发光层6和覆盖层7，其形成在该基板4的取向微晶层3上，用于通过气相生长形成发光层 方法，并且其包括氮化物半导体。 发光层6由平均粒径为1-1000nm的微晶粒构成。

公开(公告)号：US06888867B2

公开(公告)日：2005-05-03

申请号：US10109458

申请日：2002-03-26

申请人： Nobuhiko Sawaki ,  Yoshio Honda ,  Norifumi Kameshiro ,  Masahito Yamaguchi ,  Norikatsu Koide ,  Shigetoshi Ito ,  Tomoki Ono ,  Katsuki Furukawa

发明人： Nobuhiko Sawaki ,  Yoshio Honda ,  Norifumi Kameshiro ,  Masahito Yamaguchi ,  Norikatsu Koide ,  Shigetoshi Ito ,  Tomoki Ono ,  Katsuki Furukawa

IPC分类号： H01S5/02 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323 ,  H01S5/00

CPC分类号： H01S5/32341 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0425 ,  H01S5/3203 ,  H01S2304/00

摘要： A semiconductor laser device includes a substrate and an n-GaN layer composed of a nitride semiconductor formed on the substrate. The substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane. The n-GaN layer is formed on the slope. On the n-GaN layer are formed a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor. The active layer has a plane orientation substantially matching the plane orientation of the main plane.

摘要翻译： 半导体激光器件包括衬底和由衬底上形成的氮化物半导体构成的n-GaN层。 衬底包括具有从衬底的主平面倾斜62度的平面或从倾斜面任意方向倾斜3度的平面的斜面的沟槽。 在斜面上形成n-GaN层。 在n-GaN层上形成有由氮化物半导体构成的下包层，有源层和上覆层。 有源层具有基本上与主平面的平面取向一致的平面取向。

公开(公告)号：US20050245054A1

公开(公告)日：2005-11-03

申请号：US10974698

申请日：2004-10-28

申请人： Nobuhiko Sawaki ,  Yoshio Honda ,  Yoshiyuki Nishimura

发明人： Nobuhiko Sawaki ,  Yoshio Honda ,  Yoshiyuki Nishimura

IPC分类号： C30B29/38 ,  C23C16/34 ,  H01L21/20 ,  H01L21/205 ,  C30B1/00 ,  H01L21/36

CPC分类号： H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647

摘要： A mask with rectangular openings is formed on a large-scaled silicon substrate, and an AlN micro crystalline layer is formed in a thickness of 200 nm or over through the mask on the silicon substrate by means of selective and lateral growth. Then, a nitride semiconductor crystal layer with a composition of InxGayAlzN (0≦x, y, z≦1, x+y+z=1) is formed on the AlN micro crystalline layer.

摘要翻译： 在大型硅衬底上形成具有矩形开口的掩模，并且通过选择性和横向生长通过硅衬底上的掩模在200nm或更大的厚度上形成AlN微晶层。 然后，在AlN微晶层上形成具有In x Ga y Al z N（0 <= x，y，z <= 1，x + y + z = 1）组成的氮化物半导体晶体层。

公开(公告)号：US06806115B2

公开(公告)日：2004-10-19

申请号：US10285170

申请日：2002-10-30

申请人： Norikatsu Koide ,  Junji Yamamoto ,  Tsuyoshi Dohkita ,  Nobuhiko Sawaki ,  Yoshio Honda ,  Yousuke Kuroiwa ,  Masahito Yamaguchi

发明人： Norikatsu Koide ,  Junji Yamamoto ,  Tsuyoshi Dohkita ,  Nobuhiko Sawaki ,  Yoshio Honda ,  Yousuke Kuroiwa ,  Masahito Yamaguchi

IPC分类号： H01L2100

CPC分类号： H01L33/08

摘要： A method for producing a semiconductor light emitting device includes the steps of forming a mask layer having a plurality of openings on a surface of a silicon substrate; and forming a column-like multi-layer structure including a light emitting layer in each of the plurality of openings with nitride semiconductor materials. A width between two adjacent openings of the plurality of openings of the mask layer is 10 &mgr;m or less.

摘要翻译： 一种制造半导体发光器件的方法包括以下步骤：在硅衬底的表面上形成具有多个开口的掩模层; 以及在氮化物半导体材料的多个开口中形成包括发光层的柱状多层结构。 掩模层的多个开口的两个相邻开口之间的宽度为10um或更小。