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公开(公告)号：US5803386A
公开(公告)日：1998-09-08
申请号：US711881
申请日：1996-09-12
CPC分类号： G03D13/003
摘要： A film cartridge case which holds and carries therein a group of film cartridges for feeding sheets of undeveloped film loaded in their respective film cartridges to the development unit of an automatic photographic film development processor apparatus includes a plurality of cartridge pockets. Each pocket has a mispositioning preventing projection provided on one side of an inner wall thereof for engaging with a barcode readout window in the film cartridge upon the film cartridge being placed in the cartridge pocket in a correct orientation. The case includes holding members for detachably holding the film cartridges in their respective cartridge pockets. A conveyor element is arranged to be engaged by a conveying device. Film sheets can be loaded to and unloaded from respective film cartridges installed in the cartridge pockets.
摘要翻译： 保存并携带一组胶片暗盒的暗盒盒，该暗盒用于将装载在其各自胶片暗盒中的未显影胶片的片材送入自动摄影胶片显影处理器装置的显影单元，包括多个暗盒凹口。 每个口袋具有设置在其内壁的一侧上的错位防止突起，用于与胶片暗盒中的条形码读取窗口接合，而胶片暗盒以正确的方向放置在盒式存储器中。 壳体包括用于将胶片盒可拆卸地保持在它们各自的盒口中的保持构件。 传送器元件布置成由输送装置接合。 胶片片可以装载到安装在墨盒袋中的各个暗盒中并从其卸载。
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公开(公告)号：US5796465A
公开(公告)日：1998-08-18
申请号：US718948
申请日：1996-09-24
CPC分类号： G03D13/003
摘要： An automatic film development apparatus includes a cartridge case for carrying a group of film cartridges loaded with undeveloped films. A feeder unit stores a plurality of the cartridge cases and delivering them one by one to an unloading station for unloading sheets of undeveloped film from respective film cartridges in the cartridge case. The undeveloped film sheet is rewound at a rewinding station into a takeup cartridge. A splicer unit joins one end of the undeveloped film sheet from the takeup cartridge to a short film leader supplied from a film leader supply unit for feeding short film leaders one at the time. A development unit developes the undeveloped film sheet joined to the short film leader. A separator unit separates a developed film sheet from the short film leader. The developed film sheet separated from the short film leader is loaded at a loading station back into its film cartridge. A conveying means conveys the cartridge case filled with film cartridges unloaded of film from the unloading station to the loading station. A leader receiver unit collects short film leaders separated from respective developed film sheets.
摘要翻译： 一种自动胶片显影装置包括用于承载装有未显影胶片的一组暗盒的盒壳体。 馈送单元存储多个盒盒并将它们一个一个地传送到卸载站，以从盒盒中的各个暗盒中卸载未展开的膜片。 未开发的薄膜片在倒带台倒卷成卷取盒。 接头单元将未开发的薄膜片的一端从卷带盒连接到由胶片引导器供应单元供应的短胶片头部，用于一次给一个薄膜胶片引导。 开发单元开发连接到短片领导者的未开发的薄片。 分离器单元将显影的膜片与短片引线分开。 与短片引导件分离的显影胶卷片装载在装载站回到其暗盒中。 输送装置将装有未卸载胶片的胶片暗盒的暗盒盒从卸载台输送到装载台。 领导者接收器单元收集从相应开发的胶片片分开的短片领导。
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公开(公告)号：US5455653A
公开(公告)日：1995-10-03
申请号：US310082
申请日：1994-09-22
申请人： Yasunobu Shimamura , Shigeru Masuda , Shinji Fukushima , Masayuki Kojima , Mitsuji Kawashima , Hisashi Negoro , Yutaka Kiyonaga
发明人： Yasunobu Shimamura , Shigeru Masuda , Shinji Fukushima , Masayuki Kojima , Mitsuji Kawashima , Hisashi Negoro , Yutaka Kiyonaga
CPC分类号： G03D13/003
摘要： The films are developed and printed continuously and automatically even if the film feed direction in the film processor and the one in the printer are not in the same vertical plane. A film stocking unit is provided downstream of the film driving unit. The film stocking unit is movable to a position aligned with the film feed path extending to the printing unit. This increases the freedom or flexibility in arranging the film processor and the printer.
摘要翻译： 即使胶片处理器中的胶片输送方向和打印机中的胶片进给方向不在同一垂直平面，也可以连续自动地显影和打印胶片。 在胶片驱动单元的下游设置胶片存放单元。 胶片放置单元可移动到与延伸到打印单元的胶片馈送路径对准的位置。 这增加了布置胶片处理器和打印机的自由度或灵活性。
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公开(公告)号：US5565953A
公开(公告)日：1996-10-15
申请号：US313573
申请日：1994-09-23
申请人： Shinji Fukushima , Masayuki Kojima , Mitsuji Kawashima , Hisashi Negoro , Yutaka Kiyonaga , Shigeru Masuda
发明人： Shinji Fukushima , Masayuki Kojima , Mitsuji Kawashima , Hisashi Negoro , Yutaka Kiyonaga , Shigeru Masuda
CPC分类号： G03D13/003
摘要： Extra printing is made possible during a set of ordinary processing operations such as film development and printing. A film is developed and dried while being fed by a leader attached thereto. After cutting the leader from the film, it is fed to the printing unit to print the images on the film onto photographic paper. A plurality of film stocking units are provided in a path from the film drying unit to the printing unit. Each stocking unit can selectively stock a single film or allow it to pass without stocking. A second film stocking unit can move laterally to change the film track. If a film requiring a long exposure time is present in the printing unit, the subsequent films that have been developed and dried can be stocked in the other film stocking units. Thus, continuous film developing operations are not interrupted.
摘要翻译： 在一系列普通的加工操作（如胶片显影和印刷）中可以进行额外的印刷。 在由连接在其上的引导器供给时，开发并干燥薄膜。 从胶片上切割引导件后，将其送入打印单元，将胶片上的图像打印到相纸上。 在从胶片干燥单元到打印单元的路径中设置多个胶片存放单元。 每个放养单元可以选择性地储存单个胶片，或者使其不经过放样即可通过。 第二个放卷单元可以横向移动以改变胶片轨迹。 如果在印刷单元中存在需要长时间曝光时间的薄膜，那么已经开发和干燥的后续薄膜可以存放在其它薄片放养单元中。 因此，连续的成膜操作不会中断。
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公开(公告)号：US20100132392A1
公开(公告)日：2010-06-03
申请号：US12095107
申请日：2006-11-26
CPC分类号： F24F1/0007 , F24F1/0025 , F24F13/222
摘要： Grooves are formed on a back surface 22 of a tongue part 21 of a rear plate 3 which surface does not guide a flow of air.
摘要翻译： 凹槽形成在后板3的舌部21的后表面22上，该表面不引导空气流。
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6.发明授权公开(公告)号：US07081649B2
公开(公告)日：2006-07-25
申请号：US10920389
申请日：2004-08-18
申请人： Kozo Watanabe , Atsushi Ogishima , Masahiro Moniwa , Syunichi Hashimoto , Masayuki Kojima , Kiyonori Ohyu , Kenichi Kuroda , Nozomu Matsuda
发明人： Kozo Watanabe , Atsushi Ogishima , Masahiro Moniwa , Syunichi Hashimoto , Masayuki Kojima , Kiyonori Ohyu , Kenichi Kuroda , Nozomu Matsuda
IPC分类号： H01L29/76
CPC分类号： H01L27/10852 , H01L27/105 , H01L27/10814 , H01L27/10855 , H01L27/10873 , H01L27/10888 , H01L27/10894 , Y10S257/90
摘要： A technology for a semiconductor integrated circuitry allows each of the DRAM memory cells to be divided finely so as to be more highly integrated and operate faster. In a method of manufacturing such a semiconductor integrated circuit, at first, gate electrodes 7 are formed via a gate insulating film 6 on the main surface of a semiconductor substrate 1, and on side surfaces of each of the gate electrodes there is formed a first side wall spacer 14 composed of silicon nitride and a second side wall spacer 15 composed of silicon oxide. Then, in the selecting MISFET Qs in the DRAM memory cell area there are opened connecting holes 19 and 21 in a self-matching manner with respect to the first side wall spacers 14 and connecting portion is formed connecting a conductor 20 to a bit line BL. In addition, in the N channel MISFETs Qn1 and Qn2, and in the P channel MISFET Qp1 in areas other than the DRAM memory cell area, high density N-type semiconductor areas 16 and 16b are formed, as well as a high density P-type semiconductor area 17 is formed in a self-matching manner with respect to the second side wall spacers 15.
摘要翻译： 用于半导体集成电路的技术允许每个DRAM存储单元被细分，以便更高度地集成并且操作更快。 在制造这样的半导体集成电路的方法中，首先，在半导体衬底1的主表面上经由栅极绝缘膜6形成栅电极7，并且在每个栅电极的侧表面上形成第一 由氮化硅构成的侧壁隔板14和由氧化硅构成的第二侧壁间隔物15。 然后，在DRAM存储单元区域中的选择MISFET Qs中，相对于第一侧壁间隔件14以自匹配的方式打开连接孔19和21，并且连接部分形成为将导体20连接到位线BL 。 此外，在N沟道MISFET Qn 1和Q n 2以及在DRAM存储单元区域以外的区域中的P沟道MISFET Qp 1中，形成高密度N型半导体区域16和16b，以及 高密度P型半导体区域17相对于第二侧壁间隔件15以自匹配的方式形成。
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公开(公告)号：US06838388B2
公开(公告)日：2005-01-04
申请号：US09893577
申请日：2001-06-29
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/60 , H01L21/768 , H01L21/8242 , H01L27/108
CPC分类号： H01L21/76897 , H01L21/31116 , H01L21/31144 , H01L27/10855 , H01L27/10888
摘要： A fabrication method of a semiconductor integrated circuit device comprises, in an SAC process or HARC process, subjecting a semiconductor substrate to plasma etching to make contact holes in an oxide film made of a silicon oxide film formed on the semiconductor substrate. For improving the ease-in-etching property of the silicon oxide film and selectivity to a nitride film, a residence time of an etching gas within a chamber is so set as to be in a range where selectivity to an insulating film made of silicon nitride is improved by using etching conditions of a low pressure and a large flow rate of the etching gas of C5H8/O2/Ar.
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8.发明授权公开(公告)号：US06743673B2
公开(公告)日：2004-06-01
申请号：US10145810
申请日：2002-05-16
申请人： Kozo Watanabe , Atsushi Ogishima , Masahiro Moniwa , Syunichi Hashimoto , Masayuki Kojima , Kiyonori Ohyu , Kenichi Kuroda , Nozomu Matsuda
发明人： Kozo Watanabe , Atsushi Ogishima , Masahiro Moniwa , Syunichi Hashimoto , Masayuki Kojima , Kiyonori Ohyu , Kenichi Kuroda , Nozomu Matsuda
IPC分类号： H01L218242
CPC分类号： H01L27/10852 , H01L27/105 , H01L27/10814 , H01L27/10855 , H01L27/10873 , H01L27/10888 , H01L27/10894 , Y10S257/90
摘要： A technology for a semiconductor integrated circuitry allows each of the DRAM memory cells to be divided finely so as to be more highly integrated and operate faster. In a method of manufacturing such a semiconductor integrated circuit, at first, gate electrodes 7 are formed via a gate insulating film 6 on the main surface of a semiconductor substrate 1, and on side surfaces of each of the gate electrodes there is formed a first side wall spacer 14 composed of silicon nitride and a second side wall spacer 15 composed of silicon oxide. Then, in the selecting MISFET Qs in the DRAM memory cell area there are opened connecting holes 19 and 21 in a self-matching manner with respect to the first side wall spacers 14 and connecting portion is formed connecting a conductor 20 to a bit line BL. In addition, in the N channel MISFETs Qn1 and Qn2, and in the P channel MISFET Qp1 in areas other than the DRAM memory cell area, high density N-type semiconductor areas 16 and 16b are formed, as well as a high density P-type semiconductor area 17 is formed in a self-matching manner with respect to the second side wall spacers 15.
摘要翻译： 用于半导体集成电路的技术允许每个DRAM存储单元被细分，以便更高度地集成并且操作更快。 在制造这样的半导体集成电路的方法中，首先，在半导体衬底1的主表面上经由栅极绝缘膜6形成栅电极7，并且在每个栅电极的侧表面上形成第一 由氮化硅构成的侧壁隔板14和由氧化硅构成的第二侧壁间隔物15。 然后，在DRAM存储单元区域中的选择MISFET Qs中，相对于第一侧壁间隔件14以自匹配的方式打开连接孔19和21，并且连接部分形成为将导体20连接到位线BL 。 此外，在N沟道MISFET Qn1和Qn2以及在DRAM存储单元区域以外的区域中的P沟道MISFET Qp1中，形成高密度N型半导体区域16和16b以及高密度P- 型半导体区域17相对于第二侧壁间隔件15以自匹配的方式形成。
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公开(公告)号：US06537415B2
公开(公告)日：2003-03-25
申请号：US09942707
申请日：2001-08-31
申请人： Masayuki Kojima , Yoshimi Torii , Michimasa Hunabashi , Kazuyuki Suko , Takashi Yamada , Keizo Kuroiwa , Kazuo Nojiri , Yoshinao Kawasaki , Yoshiaki Sato , Ryooji Fukuyama , Hironobu Kawahara
发明人： Masayuki Kojima , Yoshimi Torii , Michimasa Hunabashi , Kazuyuki Suko , Takashi Yamada , Keizo Kuroiwa , Kazuo Nojiri , Yoshinao Kawasaki , Yoshiaki Sato , Ryooji Fukuyama , Hironobu Kawahara
IPC分类号： H01L213065
CPC分类号： H01L21/32136 , C23F4/00 , H01J37/185 , H01L21/67017 , H01L21/67028 , H01L21/67069 , H01L21/67161 , H01L21/67207 , H01L21/67745 , H01L21/67751
摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.
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公开(公告)号：US06254721B1
公开(公告)日：2001-07-03
申请号：US09504083
申请日：2000-02-15
申请人： Masayuki Kojima , Yoshimi Torii , Michimasa Hunabashi , Kazuyuki Suko , Takashi Yamada , Keizo Kuroiwa , Kazuo Nojiri , Yoshinao Kawasaki , Yoshiaki Sato , Ryooji Fukuyama , Hironobu Kawahara
发明人： Masayuki Kojima , Yoshimi Torii , Michimasa Hunabashi , Kazuyuki Suko , Takashi Yamada , Keizo Kuroiwa , Kazuo Nojiri , Yoshinao Kawasaki , Yoshiaki Sato , Ryooji Fukuyama , Hironobu Kawahara
IPC分类号： H01L21306
CPC分类号： H01L21/32136 , C23F4/00 , H01J37/185 , H01L21/67017 , H01L21/67028 , H01L21/67069 , H01L21/67161 , H01L21/67207 , H01L21/67745 , H01L21/67751
摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.
摘要翻译： 公开了用于处理样品的装置以及使用该装置的方法。 该设备包括用于处理样品（例如，等离子体蚀刻设备）的处理设备（a），（b）用于除去由样品处理形成的残余腐蚀性化合物，（c）用于湿法处理样品和（d）干燥 处理样品。 可以进行多个样品的湿法处理。 湿式处理装置可以包括多个湿加工站。 样品可以通过多个湿处理站串联通过，或者可以通过湿处理站并行通过。
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