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    INFORMATION TERMINAL, INFORMATION CONTROL METHOD FOR AN INFORMATION TERMINAL, AND INFORMATION CONTROL PROGRAM
    3.
    发明申请
    INFORMATION TERMINAL, INFORMATION CONTROL METHOD FOR AN INFORMATION TERMINAL, AND INFORMATION CONTROL PROGRAM 有权
    信息终端，信息终端的信息控制方法和信息控制程序

    公开(公告)号：US20120148120A1

    公开(公告)日：2012-06-14

    申请号：US13391177

    申请日：2009-09-30

    申请人： Daichi Yagi ,  Hiroyuki Kawakami ,  Akitaka Kimura

    发明人： Daichi Yagi ,  Hiroyuki Kawakami ,  Akitaka Kimura

    IPC分类号： G06K9/62

    CPC分类号： G06K9/033 ,  G06F17/30247

    摘要： To make it possible to significantly reduce a burden on a user at a time of a classification of image files added or updated, for example, and thus facilitate association with other content data. An image detector/register (20) detects an image file that is unregistered or updated, and structures and manages a list of the image files. A face rectangular detector (21) detects a face rectangle in the image files detected, associates information on the face rectangle with the image file, and stores the information. A similar face classification section (22) calculates an amount of feature of the face rectangle, compares the amount of feature calculated with amounts of feature of different face rectangles already calculated and classified into groups, detector calculates a similarity between the face rectangle and the face rectangles of the different face rectangles in the respective groups, and classifies and manages the face rectangles in accordance with a result of the similarity calculation. A similar face display section (23) displays at least one image file including the face rectangle classified into the same group on a display screen.

    摘要翻译： 为了能够在例如添加或更新的图像文件的分类时显着减少用户的负担，并且因此便于与其他内容数据的关联。 图像检测器/寄存器（20）检测未注册或更新的图像文件，并且构造并管理图像文件的列表。 面部矩形检测器（21）检测检测到的图像文件中的面部矩形，将面部矩形上的信息与图像文件相关联，并存储信息。 类似的面部分类部分（22）计算面部矩形的特征量，将所计算的特征量与已经计算并分类为组的不同面部矩形的特征量进行比较，检测器计算面部矩形和面部之间的相似度 根据相似度计算的结果对不同的脸部矩形的矩形进行分类和管理。 类似的面部显示部分（23）在显示屏幕上显示包括分为同一组的面部矩形的至少一个图像文件。

    Information terminal, information control method for an information terminal, and information control program
    4.
    发明授权
    Information terminal, information control method for an information terminal, and information control program 有权
    信息终端，信息终端的信息控制方法以及信息控制程序

    公开(公告)号：US09449237B2

    公开(公告)日：2016-09-20

    申请号：US13391177

    申请日：2009-09-30

    申请人： Daichi Yagi ,  Hiroyuki Kawakami ,  Akitaka Kimura

    发明人： Daichi Yagi ,  Hiroyuki Kawakami ,  Akitaka Kimura

    IPC分类号： G06K9/03 ,  G06F17/30

    CPC分类号： G06K9/033 ,  G06F17/30247

    摘要： To make it possible to significantly reduce a burden on a user at a time of a classification of image files added or updated, for example, and thus facilitate association with other content data. An image detector/register (20) detects an image file that is unregistered or updated, and structures and manages a list of the image files. A face rectangular detector (21) detects a face rectangle in the image files detected, associates information on the face rectangle with the image file, and stores the information. A similar face classification section (22) calculates an amount of feature of the face rectangle, compares the amount of feature calculated with amounts of feature of different face rectangles already calculated and classified into groups, calculates a similarity between the face rectangle and the face rectangles of the different face rectangles in the respective groups, and classifies and manages the face rectangles in accordance with a result of the similarity calculation. A similar face display section (23) displays at least one image file including the face rectangle classified into the same group on a display screen.

    摘要翻译： 为了能够在例如添加或更新的图像文件的分类时显着减少用户的负担，并且因此便于与其他内容数据的关联。 图像检测器/寄存器（20）检测未注册或更新的图像文件，并且构造并管理图像文件的列表。 面部矩形检测器（21）检测检测到的图像文件中的面部矩形，将面部矩形上的信息与图像文件相关联，并存储信息。 类似的面部分类部分（22）计算面部矩形的特征量，将所计算的特征量与已经计算并分类成组的不同面部矩形的特征量进行比较，计算面部矩形和面部矩形之间的相似度 的各组中的不同的面矩形，并且根据相似度计算的结果对脸部矩形进行分类和管理。 类似的面部显示部分（23）在显示屏幕上显示包括分为同一组的面部矩形的至少一个图像文件。

    Group III nitride semiconductor optical device
    5.
    发明授权
    Group III nitride semiconductor optical device 有权
    III族氮化物半导体光学器件

    公开(公告)号：US07741654B2

    公开(公告)日：2010-06-22

    申请号：US11575387

    申请日：2005-09-15

    申请人： Kazuhisa Fukuda ,  Chiaki Sasaoka ,  Akitaka Kimura

    发明人： Kazuhisa Fukuda ,  Chiaki Sasaoka ,  Akitaka Kimura

    IPC分类号： H01L29/12 ,  H01L31/00 ,  H01L33/00

    CPC分类号： H01S5/32341 ,  H01S5/223

    摘要： The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layer 309 has a superlattice structure composed of GaN layers and Al0.1Ga0.9N layers, which are alternately layered on each other. The p type cladding layer 309 has a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region 308, whereas the dislocation density is relatively high in a region directly above a current-confining region 308.

    摘要翻译： 本发明提供一种电流注入效率优异的半导体激光器。 在根据本发明的内条型半导体激光器中，p型包层309具有彼此交替层叠的由GaN层和Al 0.1 Ga 0.9 N层构成的超晶格结构。 p型覆层309具有高位错密度的一部分和低位错密度的一部分。 也就是说，在电流限制区域308的开口正上方的区域中的位错密度相对较低，而位于电流限制区域308正上方的位置的位错密度相对较高。

    Multiple quantum well semiconductor laser
    6.
    发明授权
    Multiple quantum well semiconductor laser 失效
    多量子阱半导体激光器

    公开(公告)号：US5559820A

    公开(公告)日：1996-09-24

    申请号：US499661

    申请日：1995-07-07

    申请人： Akitaka Kimura ,  Masaaki Nido ,  Akihisa Tomita ,  Akira Suzuki

    发明人： Akitaka Kimura ,  Masaaki Nido ,  Akihisa Tomita ,  Akira Suzuki

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/2275 ,  H01S5/0424 ,  H01S5/2205 ,  H01S5/3211 ,  H01S5/3415 ,  H01S5/3428

    摘要： A stripe structure including an MQW active layer has a width equal to or smaller than twice the diffusion length of holes, and a p type semiconductor layer for injecting holes into the MQW active layer is formed on both sides of the stripe structure in contact with the sides of the stripe structure. Even when any MQW structure is used as the MQW active layer in order to reduce the temperature dependency of the threshold current, holes are injected into QW layers from the p type semiconductor layer which is in direct contact with all the QW layers in the MQW active layer, so that no local presence of holes in some QW layers occurs. Since the width of the stripe structure is equal to or smaller than twice the diffusion length of holes, the holes are uniformly injected in the direction parallel to the QW surface. That is, it is possible to improve the MQW active layer, while avoiding the local presence of holes, to reduce the temperature dependency of the threshold current which is accompanied with the local presence of holes in the conventional structure. This structure can reduce the temperature dependency of the threshold current of a semiconductor laser.

    摘要翻译： 包括MQW有源层的条纹结构的宽度等于或小于孔的扩散长度的两倍，并且用于将空穴注入MQW有源层的ap型半导体层形成在条形结构的与侧面接触的两侧 的条纹结构。 即使使用任何MQW结构作为MQW有源层，为了降低阈值电流的温度依赖性，也可以将空穴从与MQW有源的所有QW层直接接触的p型半导体层注入QW层 层，使得在一些QW层中不存在空穴的局部存在。 由于条形结构的宽度等于或小于孔的扩散长度的两倍，所以孔在平行于QW表面的方向上被均匀地注入。 也就是说，可以改善MQW有源层，同时避免空穴的局部存在，以降低伴随常规结构中局部存在孔的阈值电流的温度依赖性。 该结构可以降低半导体激光器的阈值电流的温度依赖性。

    Semiconductor layer formed by selective deposition and method for depositing semiconductor layer
    7.
    发明授权
    Semiconductor layer formed by selective deposition and method for depositing semiconductor layer 有权
    通过选择性沉积形成的半导体层和用于沉积半导体层的方法

    公开(公告)号：US07655485B2

    公开(公告)日：2010-02-02

    申请号：US11937921

    申请日：2007-11-09

    申请人： Akitaka Kimura

    发明人： Akitaka Kimura

    IPC分类号： H01L21/20

    CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/145 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/32341 ,  Y10T428/24273

    摘要： In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.

    摘要翻译： 在通过选择性沉积形成电流窄化结构和限制水平方向的光与衬底平行的结构的氮化物基半导体激光器的制造方法中，当氮化物基半导体通过 金属有机化学气相沉积，防止用作选择性沉积掩模的氧化硅膜分解产生的硅沉积在再生长边界上。 为此，使用氮化硅膜作为用于选择性沉积的掩模，并且当通过金属有机化学气相沉积选择性地沉积氮化物基半导体时，氮化物基半导体的V族材料，即， 提供氮材料，例如氨，以防止用作选择性沉积掩模的氮化硅膜的分解。

    Semiconductor layer formed by selective deposition and method for depositing semiconductor layer
    8.
    发明授权
    Semiconductor layer formed by selective deposition and method for depositing semiconductor layer 有权
    通过选择性沉积形成的半导体层和用于沉积半导体层的方法

    公开(公告)号：US06887726B2

    公开(公告)日：2005-05-03

    申请号：US09161981

    申请日：1998-09-29

    申请人： Akitaka Kimura

    发明人： Akitaka Kimura

    IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L29/22 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00

    CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/145 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/32341 ,  Y10T428/24273

    摘要： In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.

    摘要翻译： 在通过选择性沉积形成电流窄化结构和限制水平方向的光与衬底平行的结构的氮化物基半导体激光器的制造方法中，当氮化物基半导体通过 金属有机化学气相沉积，防止用作选择性沉积掩模的氧化硅膜分解产生的硅沉积在再生长边界上。 为此，使用氮化硅膜作为用于选择性沉积的掩模，并且当通过金属有机化学气相沉积选择性地沉积氮化物基半导体时，氮化物基半导体的V族材料，即， 提供氮材料，例如氨，以防止用作选择性沉积掩模的氮化硅膜的分解。