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    Semiconductor device manufacturing method
    1.
    发明授权
    Semiconductor device manufacturing method 失效
    半导体器件制造方法

    公开(公告)号：US08138059B2

    公开(公告)日：2012-03-20

    申请号：US12564440

    申请日：2009-09-22

    申请人： Kentaro Matsunaga ,  Hirokazu Kato ,  Tomoya Oori

    发明人： Kentaro Matsunaga ,  Hirokazu Kato ,  Tomoya Oori

    IPC分类号： H01L21/76

    CPC分类号： H01L21/0273 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144

    摘要： A semiconductor device manufacturing method includes: forming a core pattern on a foundation film, the core pattern containing a material generating acid by light exposure; selectively exposing part of the core pattern except an longitudinal end portion; supplying a mask material onto the foundation film so as to cover the core pattern, the mask material being crosslinkable upon supply acid from the core pattern; etching back the mask material to expose an upper surface of the core pattern and remove a portion of the mask material formed on the end portion of the core pattern, thereby leaving a mask material side wall portion formed on a side wall of the core pattern; and removing the core pattern and processing the foundation film by using the mask material sidewall portion left on the foundation film as a mask.

    摘要翻译： 半导体器件制造方法包括：在基底膜上形成芯图案，所述芯图案含有通过曝光产生酸的材料; 选择性地暴露除了纵向端部之外的芯图案的一部分; 将掩模材料供应到所述基底膜上以覆盖所述芯图案，所述掩模材料在从所述芯图案供给酸时可交联; 蚀刻掩模材料以露出芯图案的上表面并且去除形成在芯图案的端部上的掩模材料的一部分，从而留下形成在芯图案的侧壁上的掩模材料侧壁部分; 并且通过使用留在基底膜上的掩模材料侧壁部分作为掩模去除芯图案和处理基底膜。

    Pattern formation method and method for manufacturing semiconductor device
    2.
    发明授权
    Pattern formation method and method for manufacturing semiconductor device 失效
    图案形成方法和制造半导体器件的方法

    公开(公告)号：US08747682B2

    公开(公告)日：2014-06-10

    申请号：US12849599

    申请日：2010-08-03

    申请人： Kentaro Matsunaga ,  Tomoya Oori ,  Eishi Shiobara ,  Yukiko Sato ,  Yoshihisa Kawamura

    发明人： Kentaro Matsunaga ,  Tomoya Oori ,  Eishi Shiobara ,  Yukiko Sato ,  Yoshihisa Kawamura

    IPC分类号： C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01B13/00 ,  B44C1/22

    CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149

    摘要： According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions.

    摘要翻译： 根据一个实施例，公开了图案形成方法。 该方法包括在基础上形成多个区域，并且多个区域对应于不同的图案尺寸。 该方法包括从多个嵌段共聚物中的另一个嵌段共聚物中分离多个嵌段共聚物，并将多个嵌段共聚物中的每一个分离成相应的一个区域。 该方法包括进行每个区域的每个嵌段共聚物的相分离。 该方法包括选择性地除去每个相分离的嵌段共聚物的指定相以形成每个嵌段共聚物的图案，并且该图案对于每个区域具有不同的图案尺寸。

    Method of manufacturing a semiconductor device
    3.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08329385B2

    公开(公告)日：2012-12-11

    申请号：US12481919

    申请日：2009-06-10

    申请人： Eishi Shiobara ,  Keisuke Kikutani ,  Kazuyuki Yahiro ,  Kentaro Matsunaga ,  Tomoya Oori

    发明人： Eishi Shiobara ,  Keisuke Kikutani ,  Kazuyuki Yahiro ,  Kentaro Matsunaga ,  Tomoya Oori

    IPC分类号： G03F7/26

    CPC分类号： G03F7/095 ,  G03F7/091 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/32139

    摘要： A method of manufacturing a semiconductor device according to one embodiment, includes: forming a first mask material film on a workpiece film formed on a semiconductor substrate; forming a resist pattern on the first mask material film; forming a second mask material film having a desired film thickness on the first mask material film so as to cover the resist pattern; carrying out etchback of the second mask material film so as to expose the resist pattern and the first mask material film; processing the resist pattern and the first mask material film simultaneously which are exposed, while leaving the second mask material film of which etchback is carried out; and processing the workpiece film which exposes under the first mask material film.

    摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在形成在半导体衬底上的工件膜上形成第一掩模材料膜; 在第一掩模材料膜上形成抗蚀剂图案; 在所述第一掩模材料膜上形成具有所需膜厚度的第二掩模材料膜以覆盖所述抗蚀剂图案; 对所述第二掩模材料膜进行回蚀以暴露所述抗蚀图案和所述第一掩模材料膜; 同时处理曝光的抗蚀剂图案和第一掩模材料膜，同时留下进行回蚀的第二掩模材料膜; 并处理在第一掩模材料膜下露出的工件膜。

    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20090305166A1

    公开(公告)日：2009-12-10

    申请号：US12481919

    申请日：2009-06-10

    申请人： Eishi SHIOBARA ,  Keisuke Kikutani ,  Kazuyuki Yahiro ,  Kentaro Matsunaga ,  Tomoya Oori

    发明人： Eishi SHIOBARA ,  Keisuke Kikutani ,  Kazuyuki Yahiro ,  Kentaro Matsunaga ,  Tomoya Oori

    IPC分类号： G03F7/20

    CPC分类号： G03F7/095 ,  G03F7/091 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/32139

    摘要： A method of manufacturing a semiconductor device according to one embodiment, includes: forming a first mask material film on a workpiece film formed on a semiconductor substrate; forming a resist pattern on the first mask material film; forming a second mask material film having a desired film thickness on the first mask material film so as to cover the resist pattern; carrying out etchback of the second mask material film so as to expose the resist pattern and the first mask material film; processing the resist pattern and the first mask material film simultaneously which are exposed, while leaving the second mask material film of which etchback is carried out; and processing the workpiece film which exposes under the first mask material film.

    摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在形成在半导体衬底上的工件膜上形成第一掩模材料膜; 在第一掩模材料膜上形成抗蚀剂图案; 在所述第一掩模材料膜上形成具有所需膜厚度的第二掩模材料膜以覆盖所述抗蚀剂图案; 对所述第二掩模材料膜进行回蚀以暴露所述抗蚀剂图案和所述第一掩模材料膜; 同时处理曝光的抗蚀剂图案和第一掩模材料膜，同时留下进行回蚀的第二掩模材料膜; 并处理在第一掩模材料膜下露出的工件膜。

    Method of manufacturing a semiconductor device
    5.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08158332B2

    公开(公告)日：2012-04-17

    申请号：US12689830

    申请日：2010-01-19

    申请人： Kentaro Matsunaga ,  Tomoya Oori ,  Eishi Shiobara

    发明人： Kentaro Matsunaga ,  Tomoya Oori ,  Eishi Shiobara

    IPC分类号： G03C5/00

    CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L27/11517 ,  H01L27/11521

    摘要： A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment.

    摘要翻译： 根据实施例的制造半导体器件的方法包括：在工件材料上形成由第一抗蚀剂材料制成的第一抗蚀剂图案; 将能量束照射到所述第一抗蚀剂图案上，所述能量束将所述第一抗蚀剂材料暴露于光; 进行能量束照射后的第一抗蚀剂图案的改善电阻的处理; 在所述工件材料上形成涂覆膜以覆盖所述第一抗蚀剂图案; 以及在处理后在涂膜上形成由第二抗蚀剂材料制成的第二抗蚀剂图案。

    IMPRINT METHOD
    6.
    发明申请
    IMPRINT METHOD 有权
    IMPRINT方法

    公开(公告)号：US20100078860A1

    公开(公告)日：2010-04-01

    申请号：US12563461

    申请日：2009-09-21

    申请人： Ikuo Yoneda ,  Kentaro Matsunaga ,  Yukiko Kikuchi ,  Yoshihisa Kawamura ,  Eishi Shiobara ,  Shinichi Ito ,  Tetsuro Nakasugi ,  Hirokazu Kato

    发明人： Ikuo Yoneda ,  Kentaro Matsunaga ,  Yukiko Kikuchi ,  Yoshihisa Kawamura ,  Eishi Shiobara ,  Shinichi Ito ,  Tetsuro Nakasugi ,  Hirokazu Kato

    IPC分类号： B29C35/08

    CPC分类号： B29C37/0003 ,  B29C35/0888 ,  B29C37/006 ,  B29C59/022 ,  B29C2035/0822 ,  B29C2035/0827 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.

    摘要翻译： 压印方法包括将光固化树脂施加在待加工的基板上，所述基板包括施加有光固化树脂的第一和第二区域，使印模与光固化树脂接触，通过照射光固化树脂来固化光固化树脂 光固化树脂，其光通过压印模具，通过对施加在基板的区域上的光固化树脂进行预定处理产生气体，该区域至少包括第一区域，其中从光可固化 施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量，并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

    Imprint method
    7.
    发明授权
    Imprint method 有权
    印记法

    公开(公告)号：US08419995B2

    公开(公告)日：2013-04-16

    申请号：US12563461

    申请日：2009-09-21

    申请人： Ikuo Yoneda ,  Kentaro Matsunaga ,  Yukiko Kikuchi ,  Yoshihisa Kawamura ,  Eishi Shiobara ,  Shinichi Ito ,  Tetsuro Nakasugi ,  Hirokazu Kato

    发明人： Ikuo Yoneda ,  Kentaro Matsunaga ,  Yukiko Kikuchi ,  Yoshihisa Kawamura ,  Eishi Shiobara ,  Shinichi Ito ,  Tetsuro Nakasugi ,  Hirokazu Kato

    IPC分类号： B28B11/08 ,  B29C35/08

    CPC分类号： B29C37/0003 ,  B29C35/0888 ,  B29C37/006 ,  B29C59/022 ,  B29C2035/0822 ,  B29C2035/0827 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.

    摘要翻译： 压印方法包括将光固化树脂施加在待加工的基板上，所述基板包括施加有光固化树脂的第一和第二区域，使印模与光固化树脂接触，通过照射光固化树脂来固化光固化树脂 光固化树脂，其光通过压印模具，通过对施加在基板的区域上的光固化树脂进行预定处理产生气体，该区域至少包括第一区域，其中从光可固化 施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量，并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

    Manufacturing method of semiconductor device
    8.
    发明授权
    Manufacturing method of semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US07742150B2

    公开(公告)日：2010-06-22

    申请号：US11654566

    申请日：2007-01-18

    申请人： Shinichi Ito ,  Kentaro Matsunaga ,  Daisuke Kawamura

    发明人： Shinichi Ito ,  Kentaro Matsunaga ,  Daisuke Kawamura

    IPC分类号： G03B27/32

    CPC分类号： G03D3/08 ,  G03B27/42 ,  G03F7/70341

    摘要： A manufacturing method of a semiconductor device including a liquid immersion movement exposure of interposing a liquid between an exposure target substrate and a projection optical system of an exposure apparatus, and carrying out an exposure processing with respect to a plurality of exposure regions set on a surface of the substrate while relatively moving the substrate with respect to the system, a first liquid immersion movement of relatively moving the substrate with respect to the system while interposing the liquid between the substrate and the system, in adjacent exposure regions of said each exposure region, and a second liquid immersion movement of relatively moving the substrate with respect to the system at a speed lower than a movement speed in the first movement, while interposing the liquid between the substrate and the system, in a distance that is longer than a movement distance in the first movement.

    摘要翻译： 一种半导体器件的制造方法，包括在曝光对象基板和曝光装置的投影光学系统之间插入液体的液浸式移动曝光，并对相对于设置在表面上的多个曝光区域进行曝光处理 在相对于所述系统相对移动所述衬底的同时，在所述每个曝光区域的相邻曝光区域中相对于所述衬底相对地移动所述衬底同时在所述衬底和所述系统之间插入液体的第一液浸动作， 以及第二液浸移动，其以比第一移动中的移动速度低的速度相对于所述系统移动所述基板，同时在所述基板和所述系统之间以比移动距离长的距离 在第一动作。