摘要:
An ultra-narrow band fluorine laser apparatus is provided in which a line width of a fluorine laser can be narrowed to about 0.2 to 0.3 pm without using any band-narrowing element such as an etalon. In an oscillator 11, a laser chamber 15 is provided in a stable type resonator constituted by an output mirror 13 and a totally reflecting mirror 14. The laser chamber 15 is filled with a laser gas at about 0.8 atm. As a result, when discharge is caused in the laser chamber 15 to cause laser oscillation, laser light L10 in a bandwidth of about 0.3 pm is provided. The power of the laser light L10 is increased by an amplifier 12. The amplifier 12 emits laser light L20 in a bandwidth of about 0.3 pm having laser energy of 10 mJ or more.
摘要:
An extreme ultraviolet light source apparatus provided with a magnetic field forming unit having sufficient capability of protection against ions radiated from plasma while using a relatively small magnetic source. The apparatus includes: a target nozzle for injecting a target material; a driver laser for applying a laser beam to the target material to generate plasma; a collector mirror for collecting extreme ultraviolet light radiated from the plasma; and a magnetic field forming unit including at least one magnetic source and at least one magnetic material having two leading end parts projecting from the at least one magnetic source to face each other with a plasma emission point in between, and forming a magnetic field between a trajectory of the target material and the collector mirror.
摘要:
An extreme ultraviolet light source apparatus provided with a magnetic field forming unit having sufficient capability of protection against ions radiated from plasma while using a relatively small magnetic source. The apparatus includes: a target nozzle for injecting a target material; a driver laser for applying a laser beam to the target material to generate plasma; a collector mirror for collecting extreme ultraviolet light radiated from the plasma; and a magnetic field forming unit including at least one magnetic source and at least one magnetic material having two leading end parts projecting from the at least one magnetic source to face each other with a plasma emission point in between, and forming a magnetic field between a trajectory of the target material and the collector mirror.
摘要:
A high efficiency injection device 4, which injects oscillation stage laser light into an optical stable resonator of an amplification stage laser 20, is provided. A discharge electrode 1a is disposed in an oscillation stage laser 10, and is connected to a 12 kHz power supply 15 for discharging the discharge electrode 1a, and also a plurality of pairs of discharge electrodes 2a, 2b are disposed within the optical stable resonator of the amplification stage laser 20, and are connected to 6 kHz power supplies 25a, 25b for discharging the respective electrode pairs 2a, 2b. Discharge voltages are applied alternately to the two pairs of electrodes 2a, 2b in synchronization with the injected light to cause discharge.
摘要:
Of spontaneous emission beams emitted from a laser medium but not line-narrowed, a spontaneous emission beam whose wavelength approximates a narrowed emission beam and whose light intensity is equal to or higher than a certain level is used as a reference light.
摘要:
An extreme ultraviolet light source apparatus in which a target material is irradiated with a laser beam and turned into plasma and extreme ultraviolet light is emitted from the plasma may include: a chamber in which the extreme ultraviolet light is generated; an electromagnetic field generation unit for generating at least one of an electric field and a magnetic field inside the chamber; and a cleaning unit for charging and separating debris adhered to an optical element inside the chamber.
摘要:
An extreme ultraviolet light generation apparatus used in combination with a laser system, the apparatus may include: a chamber provided with at least one inlet port for introducing a laser beam outputted from the laser system into the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber, where the target material is irradiated with the laser beam; at least one optical element disposed inside the chamber; a magnetic field generation unit for generating a magnetic field around the predetermined region; an ion collection unit disposed in a direction of a line of magnetic force of the magnetic field for collection an ion which is generated when the target material is irradiated with the laser beam and is flowing along the line of magnetic force; and a gas introduction unit for introducing an etching gas into the chamber.
摘要:
In an EUV light source apparatus, a collector mirror is protected from debris damaging a mirror coating. The EUV light source apparatus includes: a chamber in which extreme ultraviolet light is generated; a target supply unit for supplying a target material into the chamber; a plasma generation laser unit for irradiating the target material within the chamber with a plasma generation laser beam to generate plasma; an ionization laser unit for irradiating neutral particles produced at plasma generation with an ionization laser beam to convert the neutral particles into ions; a collector mirror for collecting the extreme ultraviolet light radiated from the plasma; and a magnetic field or electric field forming unit for forming a magnetic field or an electric field within the chamber so as to trap the ions.
摘要:
In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinder 20 is arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinder 20 are provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.
摘要:
At least either of the light entering plane or the light exiting plane is parallel to the (111) crystal face of the CaF2 crystal and the laser beam entering from the entering plane passes through the plane located between the [111] axis and the first azimuth axis in the locus of rotation of the [001] axis around the [111] axis and including the [111] axis and the first azimuth axis, the plane located between the [111] axis and the second azimuth axis in the locus of rotation of the [010] axis around the [111] axis and including the [111] axis and the second azimuth axis or the plane located between the [111] axis and the third azimuth axis in the locus of rotation of the [100] axis around the [111] axis and including the [111] axis and the third azimuth axis and exits from the exiting plane.