HARDWARE-BASED AUTOMATIC CLOCK GATING
    1.
    发明申请
    HARDWARE-BASED AUTOMATIC CLOCK GATING 有权
    基于硬件的自动时钟增益

    公开(公告)号:US20130055004A1

    公开(公告)日:2013-02-28

    申请号:US13223282

    申请日:2011-08-31

    IPC分类号: G06F1/12

    摘要: A system and method for automatically updating with hardware clock tree settings on a system-on-a-chip (SOC). A SOC includes a hardware clock control unit (HCCU) coupled to a software interface and a clock tree. The SOC also includes multiple integrated circuit (IC) devices, wherein each IC device receives one or more associated core clocks provided by one or more phase lock loops (PLLs) via the clock tree. The HCCU receives a software-initiated request specifying a given IC device is to be enabled. The HCCU identifies one or more core clocks used by the given IC device. For each one of the identified core clocks, the HCCU configures associated circuitry within the clock tree to generate an identified core clock. The HCCU may also traverse the clock tree and disable clock generating gates found not to drive any other enabled gates or IC devices.

    摘要翻译: 一种使用片上系统(SOC)上的硬件时钟树设置自动更新的系统和方法。 SOC包括耦合到软件接口和时钟树的硬件时钟控制单元(HCCU)。 SOC还包括多个集成电路(IC)器件,其中每个IC器件经由时钟树接收由一个或多个锁相环(PLL)提供的一个或多个相关核心时钟。 HCCU接收软件发起的请求,指定要启用给定的IC设备。 HCCU识别给定IC器件使用的一个或多个核心时钟。 对于每个识别的核心时钟,HCCU配置时钟树内的相关电路以产生识别的核心时钟。 HCCU还可以遍历时钟树,并禁用发现不驱动任何其他启用的门或IC设备的时钟生成门。

    Method and system for modifying substrate relief features using ion implantation
    2.
    发明授权
    Method and system for modifying substrate relief features using ion implantation 有权
    使用离子注入修改底物浮雕特征的方法和系统

    公开(公告)号:US08778603B2

    公开(公告)日:2014-07-15

    申请号:US13046136

    申请日:2011-03-11

    IPC分类号: G21G1/10

    摘要: A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.

    摘要翻译: 一种处理抗蚀剂特征的方法包括在处理室中将在衬底的第一侧上具有一组图案化的抗蚀剂特征的衬底定位,并且在处理室中产生等离子体,其具有与衬底的第一侧相邻的等离子体鞘 。 该方法可以进一步包括用等离子体护套改性剂修改等离子体和等离子体护套之间的边界的形状,使得边界形状的一部分不平行于由衬底面向等离子体的前表面限定的平面 其中来自等离子体的离子在第一曝光期间在宽的角度范围内撞击在图案化的抗蚀剂特征上。

    Plasma processing apparatus
    3.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号:US08623171B2

    公开(公告)日:2014-01-07

    申请号:US12418120

    申请日:2009-04-03

    IPC分类号: H01L21/306 C23C16/00

    CPC分类号: H01J37/32623

    摘要: A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulting modifier is configured to control a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Controlling the shape of the boundary between the plasma and the plasma sheath enables a large range of incident angles of particles striking the workpiece to be achieved.

    摘要翻译: 等离子体处理装置包括处理室,位于处理室中的用于支撑工件的压板,被配置为在处理室中产生等离子体的源,其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂被配置为控制等离子体和等离子体护套之间的边界的形状,使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。 通过控制等离子体和等离子体护套之间的边界的形状,能够实现粒子撞击工件的大范围入射角。

    Apparatus and method for three dimensional ion processing
    4.
    发明授权
    Apparatus and method for three dimensional ion processing 有权
    三维离子处理装置及方法

    公开(公告)号:US08288741B1

    公开(公告)日:2012-10-16

    申请号:US13210959

    申请日:2011-08-16

    IPC分类号: G21K5/10 H01J37/08

    摘要: A method for treating a workpiece. The method includes directing a first ion beam to a first region of a workpiece, wherein the first ion beam has a first ion angular profile of first ions extracted through an aperture of an extraction plate. The method also includes directing a second ion beam to the first region of the workpiece, wherein the second ion beam has a second ion angular profile different than the first ion profile of second ions extracted through the aperture of the extraction plate.

    摘要翻译: 一种处理工件的方法。 该方法包括将第一离子束引导到工件的第一区域,其中第一离子束具有通过提取板的孔提取的第一离子的第一离子角分布。 该方法还包括将第二离子束引导到工件的第一区域,其中第二离子束具有与通过提取板的孔提取的第二离子的第一离子分布不同的第二离子角度分布。

    Ion source
    5.
    发明授权
    Ion source 有权
    离子源

    公开(公告)号:US07767977B1

    公开(公告)日:2010-08-03

    申请号:US12417929

    申请日:2009-04-03

    IPC分类号: H01J49/10 H01J37/08 H01J23/06

    摘要: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

    摘要翻译: 离子源包括具有提取孔的电弧室和等离子体鞘调制器。 等离子体鞘调制器被配置为控制等离子体和靠近提取孔的等离子体鞘之间的边界的形状。 等离子体鞘调制器可以包括位于电弧室中的一对绝缘体,并且间隔开位于靠近提取孔的间隙。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。

    Tonneau cover and attachment assembly

    公开(公告)号:US06264266B1

    公开(公告)日:2001-07-24

    申请号:US09686228

    申请日:2000-10-11

    IPC分类号: B60J700

    CPC分类号: B60J7/1621

    摘要: A clamp assembly for mounting a tonneau cover on a motor vehicle having a cargo area defined by first and second side walls, an end wall and a tailgate, the side walls having an inner panel and an outer panel includes a fastener, a first coupler plate and a bracket. The first coupler plate has a first end and a second end. The first coupler plate is articulable from an operable position to a disengaged position. The bracket has a generally horizontal rail and a vertical rail. The bracket is adapted for contacting the outer panel of the first side wall and further has a seat pivotally retaining the first end of the first coupler plate. The second end of the first coupler plate is adapted for engaging the inner panel of the first side wall defining a first restraining area between the horizontal rail and the second end of the first coupler plate. A second restraining area between the vertical rail and the second end of the first coupler plate is also defined. The fastener detachably interconnects the first coupler plate and the bracket when the first coupler plate is in the operable position.

    Connector shorting bar retention
    7.
    发明授权
    Connector shorting bar retention 失效
    连接器短路棒保持

    公开(公告)号:US5944547A

    公开(公告)日:1999-08-31

    申请号:US046659

    申请日:1998-03-24

    IPC分类号: H01R13/703 H01R29/00

    CPC分类号: H01R13/7032

    摘要: A connector is provided which includes first and second insulative housings each of which includes first and second contacts, respectively, which may be electrically and mechanically connected and disconnected, in a connected mode and disconnected mode, respectively. The first insulative housing includes shorting bars which are spring biased into contact with the first contacts in the disconnected mode. The second insulative housing includes engagement posts which engage the shorting bars in a connected mode to disengage the shorting bars from the first contacts. An improved manner of mounting the shorting bars in the first insulative housing from the rear of such housing is provided. Each shorting bar is firmly held in place by the mating of a housing keeper within the first insulative housing and shorting bar latches.

    摘要翻译: 提供了一种连接器,其包括第一和第二绝缘壳体,每个绝缘壳体分别包括第一和第二触头,其可以分别在连接模式和断开模式下被电和机械地连接和断开。 第一绝缘壳体包括在断开模式下弹簧偏置成与第一触头接触的短路棒。 第二绝缘壳体包括以连接模式接合短路棒的接合柱,以使短路杆与第一触头脱离接触。 提供了将这种短路杆从该壳体的后部安装到第一绝缘壳体中的改进方式。 每个短路棒通过在第一绝缘壳体和短路棒闩锁内的壳体保持器的配合被牢固地保持就位。