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1.发明授权Charge particle beam system, sample processing method, and semiconductor inspection system 有权充电粒子束系统，样品处理方法和半导体检测系统公开(公告)号：US07777183B2
公开(公告)日：2010-08-17
申请号：US11834220
申请日：2007-08-06
申请人： Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
发明人： Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
IPC分类号： G01N23/225
CPC分类号： G01N23/225 , H01J37/228 , H01J37/3056 , H01J2237/0455 , H01J2237/2482 , H01J2237/31745
摘要： A charged particle beam system, a sample processing method, and a semiconductor inspection system enable an accurate detection of a particle in a film without causing LMIS contamination and allow observation with an electron microscope quickly. A particle 65 causing a defect in a film 66 that has been detected with a separate optical inspection system is detected with an optical microscope 43 based on position information acquired by the separate optical inspection system. A sample 31 is processed with a nonmetal ion beam 22 so as to allow observation of the particle 65 with an electron microscope image or an ion microscope image, or ultimate analysis of the particle 65 with an EDX.
摘要翻译： 带电粒子束系统，样品处理方法和半导体检查系统能够精确地检测膜中的颗粒而不引起LMIS污染，并且可以快速用电子显微镜观察。 基于通过单独的光学检查系统获取的位置信息，用光学显微镜43检测导致用单独的光学检查系统检测到的膜66中的缺陷的颗粒65。 用非金属离子束22处理样品31，以便用电子显微镜图像或离子显微镜图像观察颗粒65，或者用EDX对颗粒65进行最终分析。
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公开(公告)号：US07592606B2
公开(公告)日：2009-09-22
申请号：US11779686
申请日：2007-07-18
申请人： Koji Ishiguro , Kaoru Umemura , Noriyuki Kaneoka
发明人： Koji Ishiguro , Kaoru Umemura , Noriyuki Kaneoka
IPC分类号： G08B21/00
CPC分类号： H01J37/3056 , H01J37/3005 , H01J37/304 , H01J2237/0225 , H01J2237/05 , H01J2237/24514 , H01J2237/248 , H01J2237/30455 , H01J2237/31744 , H01J2237/31745
摘要： Provided is a charged particle beam processing apparatus capable of improving yields by suppressing the spread of metal pollution to a semiconductor manufacturing process to a minimum. The charged particle beam processing apparatus includes an ion beam column 1 that is connected to a vacuum vessel 10 and irradiates a sample 35 with an ion beam 11 of nonmetal ion species, a microsampling unit 3 having a probe 16 that extracts a microsample 43 cut out from a sample 35 by the ion beam 11, a gas gun 2 that discharges a gas for bonding the microsample 43 and the probe 16, a pollution measuring beam column 6A that is connected to the same vacuum vessel 10 to which the ion beam column 1 is connected and irradiates an ion beam irradiation traces by the ion beam column 1 with a pollution measuring beam 13, and a detector 7 that detects characteristic X-rays emitted from the ion beam irradiation traces by the ion beam column 1 upon irradiation with the pollution measuring beam 13.
摘要翻译： 提供一种能够通过将半导体制造工序的金属污染的扩散抑制到最小来提高产率的带电粒子束处理装置。 带电粒子束处理装置包括离子束柱1，其连接到真空容器10并用非金属离子种类的离子束11照射样品35，微量取样单元3具有探针16，其提取切出的微量样品43 从样品35通过离子束11，放出用于接合微量样品43和探针16的气体的气枪2，污染测量束柱6A，连接到相同的真空容器10，离子束柱1 用离子束柱1连接并用污染测量光束13照射离子束照射迹线;以及检测器7，其在照射污染物时检测由离子束柱1从离子束照射迹线发射的特征X射线 测量光束13。
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公开(公告)号：US08431891B2
公开(公告)日：2013-04-30
申请号：US12731910
申请日：2010-03-25
CPC分类号： H01J37/261 , H01J37/20 , H01J37/3045 , H01J2237/08 , H01J2237/20207 , H01J2237/24528 , H01J2237/28 , H01J2237/31713 , H01J2237/3174 , H01J2237/31749
摘要： An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.
摘要翻译： 一种离子束处理装置，包括：将矩形离子束照射到保持在第一样品台上的样品的离子束照射光学系统，向样品照射电子束的电子束照射光学系统;以及第二样品台， 通过探针从样品中提取的试片被安装。 离子束的照射角度可以通过使第二样品台围绕倾斜轴旋转来倾斜。 控制器控制表示矩形离子束在与第二样品台的倾斜轴投射到第二样品台表面上的第一方向垂直的方向上的强度分布的偏斜宽度，使得宽度将 小于在平行于第一方向的方向上表示离子束的另一边缘的强度分布的偏斜宽度。
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公开(公告)号：US07696496B2
公开(公告)日：2010-04-13
申请号：US12003207
申请日：2007-12-20
IPC分类号： H01J37/317
CPC分类号： H01J37/3056 , H01J37/045 , H01J37/244 , H01J37/304 , H01J2237/24405 , H01J2237/24507 , H01J2237/24535 , H01J2237/24542 , H01J2237/30472
摘要： The apparatus for ion beam fabrication, which has been able to detect any anomalous condition of ion beams only by means of the current irradiated on the specimen, could not compensate the failure by investigating the cause and could not realize stable processing. To solve the problem described above, the present invention includes the first and second blankers and Faraday cups switches ON and OFF the first and second blankers and monitors beam current at two positions above and below the projection mask. By adopting this configuration, it will be possible to acquire the information on failure in ion beam, sort out the cause of the failure and to compensate the failure while limiting damages to the projection mask. As a result, it will be possible to realize stable processing by means of ion beam, and to use the ion beam fabricating device on a stable basis.
摘要翻译： 离子束制造装置只能通过照射在样本上的电流来检测离子束的任何异常状态，不能通过调查原因补偿故障，无法实现稳定的处理。 为了解决上述问题，本发明包括第一和第二消隐器和法拉第杯开关第一和第二消隐器的接通和断开，并监视在投影面罩上方和下方的两个位置处的电流。 通过采用这种配置，可以获取关于离子束故障的信息，整理故障原因并补偿故障，同时限制对投影面罩的损害。 结果，可以通过离子束实现稳定的处理，并且可以稳定地使用离子束制造装置。
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5.发明申请Charged particle beam system, semiconductor inspection system, and method of machining sample 审中-公开带电粒子束系统，半导体检测系统和样品加工方法公开(公告)号：US20070158560A1
公开(公告)日：2007-07-12
申请号：US11646421
申请日：2006-12-28
申请人： Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
发明人： Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
IPC分类号： G21K7/00
CPC分类号： H01J37/3026 , H01J37/09 , H01J2237/0815 , H01J2237/30477 , H01J2237/31745 , H01J2237/31749
摘要： Provided is a technique for accurately taking out a defect detected by an electron beam, and for analyzing the defect. In this technique, a defective portion in a wafer is detected by the irradiation of the electron beam. A mark made of a deposition layer is formed by irradiating the electron beam onto the defective portion while supplying a deposition gas thereto. On the basis of this mark, the defective portion is machined into a sample piece by using a projection ion beam generated from a gas ion source, and thereby the defective portion is taken out.
摘要翻译： 提供了一种用于准确地取出由电子束检测到的缺陷并用于分析缺陷的技术。 在该技术中，通过电子束的照射来检测晶片中的缺陷部分。 通过在向其提供沉积气体的同时将电子束照射到缺陷部分上形成由沉积层制成的标记。 基于该标记，通过使用从气体离子源产生的投射离子束将缺陷部分加工成样品片，从而取出缺陷部分。
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6.发明授权Ion source, ion beam processing/observation apparatus, charged particle beam apparatus, and method for observing cross section of sample 有权离子源，离子束处理/观察装置，带电粒子束装置和观察样品截面的方法公开(公告)号：US08481980B2
公开(公告)日：2013-07-09
申请号：US12108037
申请日：2008-04-23
IPC分类号： G21K5/10
CPC分类号： C23C14/3442 , H01J27/10 , H01J37/08 , H01J37/28 , H01J37/3023 , H01J37/3056 , H01J2237/006 , H01J2237/057 , H01J2237/0807 , H01J2237/0825 , H01J2237/0827 , H01J2237/31745 , H01J2237/31749
摘要： An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve.
摘要翻译： 一种与电子部件的横截面观察技术有关的离子束加工和观察方法，通过使用离子束加工样品的电子部件和能够减少填充加工孔的时间的带电粒子束处理器 在填充区域具有高度的平整度。 观察装置能够切换用于用于观察样品的气体离子束的种类来加工样品的气体离子束的种类。 为了实现用于样品加工的气体离子束的种类和用于样品观察的气体离子束的种类之间的切换，使用至少两个气体导入系统，每个系统具有气瓶，气体管，气体 音量控制阀和截止阀。
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公开(公告)号：US07700931B2
公开(公告)日：2010-04-20
申请号：US11674262
申请日：2007-02-13
CPC分类号： H01J37/261 , H01J37/20 , H01J37/3045 , H01J2237/08 , H01J2237/20207 , H01J2237/24528 , H01J2237/28 , H01J2237/31713 , H01J2237/3174 , H01J2237/31749
摘要： The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage. The ion beam processing apparatus is structured so that a segment drawn by projecting the axis, along which the ion beam is drawn out of the ion source, on a plane perpendicular to the ion beam irradiation axis can be at least substantially parallel to a segment drawn by projecting the tilting axis of the second sample stage on the plane perpendicular to the ion beam irradiation axis.
摘要翻译： 本发明提供了一种离子束处理技术，用于提高使用离子束处理样品的一部分的精度，而不需要比常规所需的处理时间长的处理时间，并且缩短了分离微测试件所需的时间，而没有 打破样品或准备分离所需的时间。 离子束处理装置被构造成使得离子束从离子源拉出的轴和离子束照射到安装在第一样品台上的样品的离子束照射轴将以一定角度相遇 。 此外，离子束处理装置具有通过旋转第二样品台而使离子束照射到样品上的照射角度的倾斜能力，通过进行离子束处理从样品中提取试验片 围绕第二样品台的倾斜轴安装。 离子束处理装置被构造成使得通过将离子束从离子源拉出的轴在垂直于离子束照射轴线的平面上突出的拉伸而绘制的区段可以至少基本上平行于拉伸的区段 通过将第二样品台的倾斜轴投影在垂直于离子束照射轴的平面上。
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公开(公告)号：US20080018460A1
公开(公告)日：2008-01-24
申请号：US11779686
申请日：2007-07-18
申请人： Koji Ishiguro , Kaoru Umemura , Noriyuki Kaneoka
发明人： Koji Ishiguro , Kaoru Umemura , Noriyuki Kaneoka
CPC分类号： H01J37/3056 , H01J37/3005 , H01J37/304 , H01J2237/0225 , H01J2237/05 , H01J2237/24514 , H01J2237/248 , H01J2237/30455 , H01J2237/31744 , H01J2237/31745
摘要： Provided is a charged particle beam processing apparatus capable of improving yields by suppressing the spread of metal pollution to a semiconductor manufacturing process to a minimum. The charged particle beam processing apparatus includes an ion beam column 1 that is connected to a vacuum vessel 10 and irradiates a sample 35 with an ion beam 11 of nonmetal ion species, a microsampling unit 3 having a probe 16 that extracts a microsample 43 cut out from a sample 35 by the ion beam 11, a gas gun 2 that discharges a gas for bonding the microsample 43 and the probe 16, a pollution measuring beam column 6A that is connected to the same vacuum vessel 10 to which the ion beam column 1 is connected and irradiates an ion beam irradiation traces by the ion beam column 1 with a pollution measuring beam 13, and a detector 7 that detects characteristic X-rays emitted from the ion beam irradiation traces by the ion beam column 1 upon irradiation with the pollution measuring beam 13.
摘要翻译： 提供一种能够通过将半导体制造工序的金属污染的扩散抑制到最小来提高产率的带电粒子束处理装置。 带电粒子束处理装置包括离子束柱1，其连接到真空容器10并用非金属离子种类的离子束11照射样品35，微量取样单元3具有探针16，其提取切出的微量样品43 从样品35通过离子束11，放出用于接合微量样品43和探针16的气体的气枪2，连接到同一真空容器10的污染测量束柱6A，离子束柱 1通过离子束柱1连接并用污染测量光束13照射离子束照射迹线;以及检测器7，其在照射离子束柱1时检测由离子束柱1从离子束照射迹线发射的特征X射线 污染测量梁13。
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公开(公告)号：US20060284115A1
公开(公告)日：2006-12-21
申请号：US11439541
申请日：2006-05-24
IPC分类号： H01J37/08
CPC分类号： H01J37/28 , H01J2237/2815 , H01J2237/31732
摘要： A technique is provided which can precisely form a deposition pile in a hole bored in the surface of a specimen. In ion beam apparatus and analysis method, the specimen surface is bored or a deposition pile is formed in the hole bored in the specimen surface. A measuring instrument is provided for measuring a height of the hole bored in the specimen surface or a height of the deposition pile formed in the hole. During fabrication of boring the hole in the specimen surface or fabrication of filling the hole bored in the specimen surface, an image of an area encompassing the hole and the depth of the hole or the height of the deposition pile are displayed.
摘要翻译： 提供了一种技术，其可以在在样品表面上钻孔的孔中精确地形成沉积桩。 在离子束装置和分析方法中，试样表面无孔或在试样表面孔中形成沉积桩。 提供了一种测量仪器，用于测量在样品表面中钻孔的孔的高度或形成在孔中的沉积桩的高度。 在镗孔试样表面的孔或制作填充试样表面的孔时，显示包围孔的区域和孔的深度或沉积桩的高度的图像。
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公开(公告)号：US20100176297A1
公开(公告)日：2010-07-15
申请号：US12731910
申请日：2010-03-25
CPC分类号： H01J37/261 , H01J37/20 , H01J37/3045 , H01J2237/08 , H01J2237/20207 , H01J2237/24528 , H01J2237/28 , H01J2237/31713 , H01J2237/3174 , H01J2237/31749
摘要： An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.
摘要翻译： 一种离子束处理装置，包括：将矩形离子束照射到保持在第一样品台上的样品的离子束照射光学系统，向样品照射电子束的电子束照射光学系统;以及第二样品台， 通过探针从样品中提取的试片被安装。 离子束的照射角度可以通过使第二样品台围绕倾斜轴旋转来倾斜。 控制器控制表示矩形离子束在与第二样品台的倾斜轴投射到第二样品台表面上的第一方向垂直的方向上的强度分布的偏斜宽度，使得宽度将 小于在平行于第一方向的方向上表示离子束的另一边缘的强度分布的偏斜宽度。
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