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    Method for forming dielectric film to improve adhesion of low-k film
    2.
    发明授权
    Method for forming dielectric film to improve adhesion of low-k film 有权
    用于形成介电膜以改善低k膜的粘附性的方法

    公开(公告)号：US07465676B2

    公开(公告)日：2008-12-16

    申请号：US11409658

    申请日：2006-04-24

    申请人： Fang Wen Tsai ,  I-I Chen ,  Zhen-Cheng Wu ,  Chih-Lung Lin ,  Tien-I Bao ,  Shwang-Ming Jeng ,  Chen-Hua Yu

    发明人： Fang Wen Tsai ,  I-I Chen ,  Zhen-Cheng Wu ,  Chih-Lung Lin ,  Tien-I Bao ,  Shwang-Ming Jeng ,  Chen-Hua Yu

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/76832 ,  H01L21/76843

    摘要： A semiconductor structure having improved adhesion between a low-k dielectric layer and the underlying layer and a method for forming the same are provided. The semiconductor substrate includes a dielectric layer over a semiconductor substrate, an adhesion layer on the dielectric layer wherein the adhesion layer comprises a transition sub-layer over an initial sub-layer, and wherein the transition sub-layer has a composition that gradually changes from a lower portion to an upper portion. A low-k dielectric layer is formed on the adhesion layer. Damascene openings are formed in the low-k dielectric layer. A top portion of the transition sub-layer has a composition substantially similar to a composition of the low-k dielectric layer. A bottom portion of the transition sub-layer has a composition substantially similar to a composition of the initial sub-layer.

    摘要翻译： 提供了具有改善的低k电介质层和下层之间的粘附性的半导体结构及其形成方法。 所述半导体衬底包括半导体衬底上的电介质层，所述电介质层上的粘合层，其中所述粘合层包含初始子层上的过渡子层，并且其中所述过渡子层具有逐渐从 下部到上部。 在粘合层上形成低k电介质层。 在低k电介质层中形成镶嵌开口。 过渡子层的顶部具有与低k电介质层的组成基本相似的组成。 过渡子层的底部具有与初始子层的组成基本相似的组成。

    Peeling-free porous capping material
    3.
    发明申请
    Peeling-free porous capping material 审中-公开
    无剥离多孔封盖材料

    公开(公告)号：US20080188074A1

    公开(公告)日：2008-08-07

    申请号：US11728623

    申请日：2007-03-27

    申请人： I-I Chen ,  Fang Wen Tsai ,  Zhen-Cheng Wu ,  Tien-I Bao ,  Shwang-Ming Jeng ,  Chen-Hua Yu

    发明人： I-I Chen ,  Fang Wen Tsai ,  Zhen-Cheng Wu ,  Tien-I Bao ,  Shwang-Ming Jeng ,  Chen-Hua Yu

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for forming a cap layer for an interconnect structure is provided. The method includes providing a substrate; depositing a low-k dielectric layer comprising a first porogen over the substrate; depositing a low-k cap layer comprising a second porogen on the low-k dielectric layer; and curing the low-k dielectric layer and the low-k cap layer simultaneously to remove the first and the second porogens, so that a first porosity in the low-k dielectric layer and a second porosity in the low-k cap layer are created. The second porosity is preferably less than the first porosity. Preferably, the low-k dielectric layer and the low-k cap layer comprise a common set of precursors and porogens, and are in-situ performed.

    摘要翻译： 提供一种用于形成互连结构的盖层的方法。 该方法包括提供基板; 在衬底上沉积包含第一致孔剂的低k电介质层; 在低k电介质层上沉积包含第二致孔剂的低k覆盖层; 并且同时固化低k电介质层和低k覆盖层以除去第一和第二致孔剂，从而产生低k电介质层中的第一孔隙和低k覆盖层中的第二孔隙率 。 第二孔隙率优选小于第一孔隙率。 优选地，低k电介质层和低k覆盖层包含一组共同的前体和致孔剂，并且原位进行。

    Method for forming dielectric film to improve adhesion of low-k film
    4.
    发明申请
    Method for forming dielectric film to improve adhesion of low-k film 有权
    用于形成介电膜以改善低k膜的粘附性的方法

    公开(公告)号：US20070249159A1

    公开(公告)日：2007-10-25

    申请号：US11409658

    申请日：2006-04-24

    申请人： Fang Tsai ,  I-I Chen ,  Zhen-Cheng Wu ,  Chih-Lung Lin ,  Tien-I Bao ,  Shwang-Ming Jeng ,  Chen-Hua Yu

    发明人： Fang Tsai ,  I-I Chen ,  Zhen-Cheng Wu ,  Chih-Lung Lin ,  Tien-I Bao ,  Shwang-Ming Jeng ,  Chen-Hua Yu

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76832 ,  H01L21/76843

    摘要： A semiconductor structure having improved adhesion between a low-k dielectric layer and the underlying layer and a method for forming the same are provided. The semiconductor substrate includes a dielectric layer over a semiconductor substrate, an adhesion layer on the dielectric layer wherein the adhesion layer comprises a transition sub-layer over an initial sub-layer, and wherein the transition sub-layer has a composition that gradually changes from a lower portion to an upper portion. A low-k dielectric layer is formed on the adhesion layer. Damascene openings are formed in the low-k dielectric layer. A top portion of the transition sub-layer has a composition substantially similar to a composition of the low-k dielectric layer. A bottom portion of the transition sub-layer has a composition substantially similar to a composition of the initial sub-layer.

    摘要翻译： 提供了具有改进的低k电介质层和下层之间的粘附性的半导体结构及其形成方法。 所述半导体衬底包括半导体衬底上的电介质层，所述电介质层上的粘合层，其中所述粘合层包含初始子层上的过渡子层，并且其中所述过渡子层具有逐渐从 下部到上部。 在粘合层上形成低k电介质层。 在低k电介质层中形成镶嵌开口。 过渡子层的顶部具有与低k电介质层的组成基本相似的组成。 过渡子层的底部具有与初始子层的组成基本相似的组成。

    Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio
    8.
    发明授权
    Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio 有权
    包含双层多孔低k电介质的互连使用不同的致孔剂来构造前者的比例

    公开(公告)号：US07723226B2

    公开(公告)日：2010-05-25

    申请号：US11654427

    申请日：2007-01-17

    申请人： Chen-Hua Yu ,  Yung-Cheng Lu ,  Pei-Ren Jeng ,  Chia-Cheng Chou ,  Keng-Chu Lin ,  Chung-Chi Ko ,  Tien-I Bao ,  Shwang-Ming Jeng

    发明人： Chen-Hua Yu ,  Yung-Cheng Lu ,  Pei-Ren Jeng ,  Chia-Cheng Chou ,  Keng-Chu Lin ,  Chung-Chi Ko ,  Tien-I Bao ,  Shwang-Ming Jeng

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A bilayer porous low dielectric constant (low-k) interconnect structure and methods of fabricating the same are presented. A preferred embodiment having an effective dielectric constant of about 2.2 comprises a bottom deposited dielectric layer and a top deposited dielectric layer in direct contact with the former. The bottom layer and the top layer have same atomic compositions, but a higher dielectric constant value k. The bottom dielectric layer serves as an etch stop layer for the top dielectric layer, and the top dielectric layer can act as CMP stop layer. One embodiment of making the structure includes forming a bottom dielectric layer having a first porogen content and a top dielectric layer having a higher porogen content. A curing process leaves lower pore density in the bottom dielectric layer than that left in the top dielectric layer, which leads to higher dielectric value k in the bottom dielectric layer.

    摘要翻译： 提出了双层多孔低介电常数（低k）互连结构及其制造方法。 具有约2.2的有效介电常数的优选实施例包括与前者直接接触的底部沉积的介电层和顶部沉积的介电层。 底层和顶层具有相同的原子组成，但是较高的介电常数值k。 底部介电层用作顶部介电层的蚀刻停止层，并且顶部介电层可以用作CMP停止层。 制造该结构的一个实施方案包括形成具有第一致孔剂含量的底部电介质层和具有较高致孔剂含量的顶部电介质层。 固化过程在底部电介质层中留下的孔隙密度低于顶部介电层中留下的孔密度，这导致底部介电层中较高的介电常数k。

    CxHy sacrificial layer for cu/low-k interconnects
    9.
    发明授权
    CxHy sacrificial layer for cu/low-k interconnects 有权
    CxHy用于cu / low-k互连的牺牲层

    公开(公告)号：US07365026B2

    公开(公告)日：2008-04-29

    申请号：US11048215

    申请日：2005-02-01

    申请人： Shwang-Ming Jeng ,  Ming Ling Yeh ,  Tien-I Bao ,  Keng-Chu Lin

    发明人： Shwang-Ming Jeng ,  Ming Ling Yeh ,  Tien-I Bao ,  Keng-Chu Lin

    IPC分类号： H01L21/469 ,  H01L23/58

    CPC分类号： H01L21/02274 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/312 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76831

    摘要： A semiconductor method of manufacturing involving low-k dielectrics is provided. The method includes depositing a hydrocarbon of the general composition CxHy on the surface of a low-k dielectric. The hydrocarbon layer is deposited by reacting a precursor material, preferably C2H4 or (CH3)2CHC6H6CH3, using a PECVD process. In accordance with embodiments of this invention, carbon diffuses into the low-k dielectric, thereby reducing low-k dielectric damage caused by plasma processing or etching. Other embodiments comprise a semiconductor device having a low-k dielectric, wherein the low-k dielectric has carbon-adjusted dielectric region adjacent a trench sidewall and a bulk dielectric region. In preferred embodiments, the carbon-adjusted dielectric region has a carbon concentration not more than about 5% less than in the bulk dielectric region.

    摘要翻译： 提供涉及低k电介质的半导体制造方法。 该方法包括在低k电介质的表面上沉积一般组合物C x H y Y y的烃。 烃层通过使前体材料，优选C 2 H 4 H 3或（CH 3）3 H 2， CHC 6 6 H 3 CH 3，使用PECVD法。 根据本发明的实施例，碳扩散到低k电介质中，由此降低由等离子体处理或蚀刻引起的低k电介质损伤。 其他实施例包括具有低k电介质的半导体器件，其中低k电介质具有邻近沟槽侧壁和大块电介质区域的碳调节介电区域。 在优选的实施方案中，碳调节的电介质区域的碳浓度比体电介质区域的碳浓度小约不超过约5％。

    Method for forming a blocking layer
    10.
    发明授权
    Method for forming a blocking layer 有权
    形成阻挡层的方法

    公开(公告)号：US06620745B2

    公开(公告)日：2003-09-16

    申请号：US10051589

    申请日：2001-10-19

    申请人： Syan-Mang Jang ,  Tien-I Bao ,  Lain-Jong Li ,  Shwang-Ming Jeng

    发明人： Syan-Mang Jang ,  Tien-I Bao ,  Lain-Jong Li ,  Shwang-Ming Jeng

    IPC分类号： H01L2131

    CPC分类号： H01L21/76829 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76832

    摘要： A method is provided for forming a blocking layer in a multilayer semiconductor device for blocking diffusion of a chemical species including the steps of providing an insulating layer including a target surface for forming a metal nitride layer thereon said insulating layer forming a portion of a multilayer semiconductor device; treating the target surface with an RF generated plasma to cause a density increase over a thickness adjacent to and including a target surface sufficient to reduce a diffusion rate of chemical species therethrough; forming at least one metal nitride layer over the target surface; and, carrying out a photolithographic process wherein the surface of the at least one metal nitride layer is patterned for etching.

    摘要翻译： 提供一种用于在用于阻挡化学物质扩散的多层半导体器件中形成阻挡层的方法，包括以下步骤：提供包括用于在其上形成金属氮化物层的靶表面的绝缘层，所述绝缘层形成多层半导体的一部分 设备; 用RF产生的等离子体处理目标表面以使得在邻近并包括目标表面的厚度上产生足够的浓度以减少化学物质通过其的扩散速率的密度增加; 在目标表面上形成至少一个金属氮化物层; 以及执行光刻工艺，其中至少一个金属氮化物层的表面被图案化以进行蚀刻。