公开(公告)号：US5869893A

公开(公告)日：1999-02-09

申请号：US816195

申请日：1997-03-12

申请人： Osamu Koseki ,  Takichi Ishii ,  Masaaki Mandai ,  Tomoyuki Yoshino ,  Hitoshi Takeuchi

发明人： Osamu Koseki ,  Takichi Ishii ,  Masaaki Mandai ,  Tomoyuki Yoshino ,  Hitoshi Takeuchi

IPC分类号： H01L21/98 ,  H01L23/538 ,  H01L23/34

CPC分类号： H01L25/50 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/24227 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73267 ,  H01L2224/92 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15153 ,  Y10S438/94

摘要： A semiconductor device comprises at least two semiconductor elements connected together at a connecting region of the semiconductor elements. At least one joint chip is adhered to the connection region of the semiconductor elements for connecting the semiconductor elements together. The joint chip has a trapezoidal cross-section defining a first surface and a second surface wider than the first surface. The second surface of the joint chip is adhered to the connection region of the semiconductor elements.

摘要翻译： 半导体器件包括在半导体元件的连接区域处连接在一起的至少两个半导体元件。 至少一个接合芯片粘附到用于将半导体元件连接在一起的半导体元件的连接区域。 接头芯片具有限定第一表面和比第一表面更宽的第二表面的梯形横截面。 接头芯片的第二表面粘附到半导体元件的连接区域。

公开(公告)号：US5639693A

公开(公告)日：1997-06-17

申请号：US347864

申请日：1994-12-01

申请人： Osamu Koseki ,  Takichi Ishii ,  Masaaki Mandai ,  Tomoyuki Yoshino ,  Hitoshi Takeuchi

发明人： Osamu Koseki ,  Takichi Ishii ,  Masaaki Mandai ,  Tomoyuki Yoshino ,  Hitoshi Takeuchi

IPC分类号： H01L21/98 ,  H01L23/538 ,  H01L21/60

CPC分类号： H01L25/50 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/24227 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73267 ,  H01L2224/92 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15153 ,  Y10S438/94

摘要： A process for fabricating a semiconductor device which permits the placement of plural semiconductor chip devices at a reduced pitch comprises the steps of bonding a plurality of semiconductor chip devices to a substrate, forming a conductive thin film on the substrate to cover at least connecting regions of the semiconductor chip devices, and patterning the conductive thin film using an excimer laser to form interconnections between the respective semiconductor chip devices. The conductive thin film is formed by a method selected from physical vapor deposition and chemical vapor deposition. The step of bonding the semiconductor chip devices to a substrate is preferably performed using an epoxy-based adhesive. Preferably, an insulating film is formed on the plural semiconductor chip devices in regions except for the connection regions. Patterning of the conductive thin film is performed using an excimer laser beam emitted in two pulses at an output energy of 300 mJ/cm.sup.2.

摘要翻译： 制造半导体器件的方法允许以减小的间距布置多个半导体芯片器件包括以下步骤：将多个半导体芯片器件接合到衬底上，在衬底上形成导电薄膜以至少覆盖至少连接区域 半导体芯片器件，并且使用准分子激光器对导电薄膜进行构图以在各个半导体芯片器件之间形成互连。 导电薄膜是通过选自物理气相沉积和化学气相沉积的方法形成的。 将半导体芯片器件接合到衬底的步骤优选使用环氧类粘合剂进行。 优选地，除了连接区域之外，在多个半导体芯片器件上形成绝缘膜。 使用在300mJ / cm 2的输出能量下以两个脉冲发射的准分子激光束进行导电薄膜的图案化。

公开(公告)号：US5763903A

公开(公告)日：1998-06-09

申请号：US516234

申请日：1995-08-17

申请人： Masaaki Mandai ,  Tomoyuki Yoshino ,  Tadao Akamine ,  Yutaka Saitoh ,  Junko Yamanaka ,  Osamu Koseki

发明人： Masaaki Mandai ,  Tomoyuki Yoshino ,  Tadao Akamine ,  Yutaka Saitoh ,  Junko Yamanaka ,  Osamu Koseki

IPC分类号： H01L27/144 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/107 ,  H01L31/0328

CPC分类号： H01L31/0203 ,  H01L27/1443 ,  H01L27/1464 ,  H01L31/107 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/10158

摘要： An avalanche photodiode for detecting x-rays and other radiation comprises a first substrate having a portion removed therefrom, a first insulating film formed on the first substrate, a second substrate comprising a floating zone silicon semiconductor substrate disposed on the first insulating film, an impurity region selectively formed in the second substrate at a surface corresponding to the removed portion, a PN junction formed on the second substrate, a glass substrate mounted to the second substrate, a first electrode formed on the first substrate for applying a voltage to the impurity region, a second electrode formed on the second substrate for applying a voltage to the second substrate, a third electrode formed on the glass substrate and electrically connected to the second electrode, and an integrated circuit package having a lead pin connected to the third electrode. Accordingly, a shallow depletion layer may be provided on a floating zone SOI substrate. The substrates may be joined to the glass substrate using a eutectic bonding process.

摘要翻译： 用于检测X射线和其它辐射的雪崩光电二极管包括：第一衬底，其具有从其中去除的部分;第一绝缘膜，形成在第一衬底上;第二衬底，包括布置在第一绝缘膜上的浮动区硅半导体衬底， 在与第二基板对应的表面上选择性地形成在第二基板上的区域，形成在第二基板上的PN结，安装到第二基板的玻璃基板，形成在第一基板上的用于向杂质区域施加电压的第一电极 形成在第二基板上的用于向第二基板施加电压的第二电极，形成在玻璃基板上并电连接到第二电极的第三电极，以及具有连接到第三电极的引脚的集成电路封装。 因此，可以在浮动区域SOI衬底上提供浅耗尽层。 可以使用共晶接合工艺将基板连接到玻璃基板。

公开(公告)号：US5744379A

公开(公告)日：1998-04-28

申请号：US491581

申请日：1995-06-06

申请人： Masaaki Mandai ,  Hitoshi Takeuchi ,  Yutaka Saito ,  Tomoyuki Yoshino

发明人： Masaaki Mandai ,  Hitoshi Takeuchi ,  Yutaka Saito ,  Tomoyuki Yoshino

IPC分类号： H01L21/98 ,  H01L23/538 ,  H01L25/18 ,  H01L21/18

CPC分类号： H01L25/50 ,  H01L23/5381 ,  H01L23/5385 ,  H01L25/18 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/01322 ,  H01L2924/10253

摘要： The semiconductor image sensor device of the multiple chip mount type is constructed such that electrical and mechanical connections are carried out concurrently among chips. Coupling chips 4 are utilized to couple a plurality of semiconductor image sensor chips 1 with each other, and the couple one semiconductor image sensor chip 1 to a driver substrate 3 which mounts thereon a semiconductor driving chip 2 for driving the semiconductor image sensor chips 1.

摘要翻译： 多芯片安装型的半导体图像传感器装置被构造成使得在芯片之间同时进行电气和机械连接。 耦合芯片4用于将多个半导体图像传感器芯片1彼此耦合，并且将一个半导体图像传感器芯片1耦合到驱动器基板3，驱动器基板3上安装用于驱动半导体图像传感器芯片1的半导体驱动芯片2。

公开(公告)号：US5977575A

公开(公告)日：1999-11-02

申请号：US54074

申请日：1993-04-27

申请人： Masaaki Mandai ,  Hitoshi Takeuchi ,  Yutaka Saito ,  Tomoyuki Yoshino

发明人： Masaaki Mandai ,  Hitoshi Takeuchi ,  Yutaka Saito ,  Tomoyuki Yoshino

IPC分类号： H01L21/98 ,  H01L23/538 ,  H01L25/18 ,  H01L27/148

CPC分类号： H01L25/50 ,  H01L23/5381 ,  H01L23/5385 ,  H01L25/18 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/01322 ,  H01L2924/10253

摘要： The semiconductor image sensor device of the multiple chip mount type is constructed such that electrical and mechanical connections are carried out concurrently among chips. Coupling chips 4 are utilized to couple a plurality of semiconductor image sensor chips 1 with each other, and the couple one semiconductor image sensor chip 1 to a driver substrate 3 which mounts thereon a semiconductor driving chip 2 for driving the semiconductor image sensor chips 1.

摘要翻译： 多芯片安装型的半导体图像传感器装置被构造成使得在芯片之间同时进行电气和机械连接。 耦合芯片4用于将多个半导体图像传感器芯片1彼此耦合，并且将一个半导体图像传感器芯片1耦合到驱动器基板3，驱动器基板3上安装用于驱动半导体图像传感器芯片1的半导体驱动芯片2。

公开(公告)号：US20090008759A1

公开(公告)日：2009-01-08

申请号：US12215168

申请日：2008-06-25

申请人： Tomoyuki Yoshino

发明人： Tomoyuki Yoshino

IPC分类号： H01L23/495 ,  H01L21/00

CPC分类号： H05K3/3426 ,  H01L23/49582 ,  H01L2924/0002 ,  H05K2201/10689 ,  H05K2201/10795 ,  H05K2201/10909 ,  Y02P70/613 ,  H01L2924/00

摘要： Provided is a semiconductor device having an element covered with a resin mold and a metal lead protruding from the resin mold in which a lead-tip portion thereof is entirely covered by solder plating and in which a lead-tip end surface, which is not covered by solder plating, has an area less than half of a cross-sectional area of the metal lead, whereby solder wettability of the metal lead is improved and a bonding strength to a circuit board is also improved.

摘要翻译： 提供一种半导体器件，其具有被树脂模具覆盖的元件和从树脂模具突出的金属引线，其中引线顶端部分被焊接电镀完全覆盖，并且其中未覆盖的引线端面表面 通过焊料镀覆，具有小于金属引线横截面面积的一半的面积，从而提高了金属引线的焊料润湿性，并且还提高了与电路板的接合强度。

公开(公告)号：US07786556B2

公开(公告)日：2010-08-31

申请号：US12215168

申请日：2008-06-25

申请人： Tomoyuki Yoshino

发明人： Tomoyuki Yoshino

IPC分类号： H01L21/00

CPC分类号： H05K3/3426 ,  H01L23/49582 ,  H01L2924/0002 ,  H05K2201/10689 ,  H05K2201/10795 ,  H05K2201/10909 ,  Y02P70/613 ,  H01L2924/00

摘要： A semiconductor device has an element encapsulated in a resin mold. Metal leads protruding from the resin mold are solder plated except at the lead-tip end surfaces, and the exposed lead-tip end surfaces have an area less than half the cross-sectional area of the protruding metal leads. The semiconductor device is manufactured using a lead frame in which the metal leads are connected to a frame by plating bars having a thickness smaller than half the thickness of the metal leads. In another embodiment, the metal leads are connected to the frame by plating bars that extend sideways from the metal leads, and the end tips of the metal leads are entirely covered with plating to improve soldering wettability.

摘要翻译： 半导体器件具有封装在树脂模具中的元件。 从树脂模具突出的金属引线除了铅尖端面以外是焊料镀覆的，露出的引线前端端面的面积小于突出金属引线的横截面面积的一半。 使用引线框架制造半导体器件，其中金属引线通过具有小于金属引线厚度的一半厚度的电镀棒连接到框架。 在另一个实施例中，金属引线通过从金属引线横向延伸的电镀棒连接到框架，并且金属引线的端部末端被电镀覆盖以提高焊接润湿性。

公开(公告)号：US5486708A

公开(公告)日：1996-01-23

申请号：US264635

申请日：1994-06-23

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 具有双面布线结构的半导体器件，其中单晶半导体薄膜与晶体管元件整体形成并层压在绝缘薄膜上。 单晶半导体薄膜形成有通孔，并且绝缘薄膜在其背面形成有电极和屏蔽膜。 还公开了使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在多层基板之间配置有电光物质。 多层基板在绝缘膜的相对侧的电极和屏蔽膜上形成有通过绝缘膜形成有分组元件的一侧。 还形成透明的相对基板，使得电光物质的光学透明度由开关元件控制。

公开(公告)号：US06690100B1

公开(公告)日：2004-02-10

申请号：US09299470

申请日：1999-04-26

申请人： Keitaro Koroishi ,  Hironobu Itoh ,  Tomoyuki Yoshino

发明人： Keitaro Koroishi ,  Hironobu Itoh ,  Tomoyuki Yoshino

IPC分类号： H01L4108

CPC分类号： H01L41/047 ,  H02N2/16

摘要： A piezoelectric actuator is formed in a manner which enhances the identifying function of markings provided thereon, and minimizes the influence on the markings when an electrode pattern on the piezoelectric actuator is shifted. The piezoelectric actuator has a piezoelectric element, an electrode pattern formed thereon, and at least one identifying marking formed on the electrode pattern, each identifying marking having a shape comprising multiple sides and being formed at a specific location of the electrode pattern for use in identifying a characteristic of the electrode pattern. In one embodiment, the piezoelectric element has a disk shape, the electrode pattern comprises a plurality of electrodes provided on an inner side of the piezoelectric element, selected electrodes being connected to each other in a desired pattern, and the identifying marking is formed on the electrode pattern proximate a peripheral edge of the piezoelectric-element and has at least three straight sides so that the area of the identifying marking is based on the length of its sides rather than a radius. Thus, shifting of the identifying marking with respect to the curved peripheral edge of the disk-shaped piezoelectric element results in reduction in area of the identifying marking on a linear basis rather than based on a squared value of a radius. In another embodiment, a plurality of identifying markings are arranged in a spaced-apart relation on the piezoelectric element.

摘要翻译： 压电致动器以增强其上提供的标记的识别功能的方式形成，并且当压电致动器上的电极图案偏移时，对标记的影响最小化。 压电致动器具有压电元件，形成在其上的电极图案和形成在电极图案上的至少一个识别标记，每个识别标记具有包括多个边的形状并形成在电极图案的特定位置，用于识别 电极图案的特性。 在一个实施例中，压电元件具有盘形状，电极图案包括设置在压电元件内侧的多个电极，所选择的电极以期望的图案彼此连接，识别标记形成在 电极图案接近压电元件的周边边缘并且具有至少三个直边，使得识别标记的面积基于其侧面的长度而不是半径。 因此，识别标记相对于盘形压电元件的弯曲周缘移动导致识别标记的面积在线性基础上而不是基于半径的平方值的减小。 在另一个实施例中，多个识别标记在压电元件上以间隔开的关系布置。

公开(公告)号：US5914555A

公开(公告)日：1999-06-22

申请号：US766038

申请日：1996-12-16

申请人： Tomoyuki Yoshino ,  Hironobu Itoh ,  Makoto Suzuki ,  Masao Kasuga

发明人： Tomoyuki Yoshino ,  Hironobu Itoh ,  Makoto Suzuki ,  Masao Kasuga

IPC分类号： H02N2/00 ,  H01L41/09 ,  H01L41/04

CPC分类号： H02N2/166

摘要： An ultrasonic motor in which a voltage is applied to a piezoelectric element by using a lead board. To fabricate the motor in a simplified manner, it is so constructed that a plurality of conductive patterns on the lead board are joined to a plurality of electrodes formed on the piezoelectric element by solder or the like, the piezoelectric element and the lead board are prevented from contacting each other by bending the conductive patterns to form a gap, then a voltage is applied to the lead board, thereby realizing the drive.

摘要翻译： 一种超声波马达，其中通过使用引导板将电压施加到压电元件。 为了以简化的方式制造电动机，构造成使得引线板上的多个导电图案通过焊料等与形成在压电元件上的多个电极接合，防止了压电元件和引线板 通过弯曲导电图案以形成间隙而彼此接触，然后将电压施加到引导板，从而实现驱动。