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    Semiconductor package
    8.
    发明授权
    Semiconductor package 有权
    半导体封装

    公开(公告)号：US08598702B2

    公开(公告)日：2013-12-03

    申请号：US13408829

    申请日：2012-02-29

    申请人： Young Hoon Kwak ,  Kwang Soo Kim ,  Young Ki Lee

    发明人： Young Hoon Kwak ,  Kwang Soo Kim ,  Young Ki Lee

    IPC分类号： H01L23/34

    CPC分类号： H01L23/473 ,  H01L2924/0002 ,  H05K7/20927 ,  H01L2924/00

    摘要： Disclosed herein is a semiconductor package. The semiconductor package includes a semiconductor module, a first heat dissipation unit, a second heat dissipation unit and a housing. The semiconductor module contains a semiconductor device. The first heat dissipation unit is provided under the semiconductor module. The first heat dissipation unit includes at least one first pipe through which first cooling water passes. A first rotator is rotatably disposed in the first pipe. The second heat dissipation unit is provided on the semiconductor module. The second heat dissipation unit includes at least one second pipe through which second cooling water passes. A second rotator is rotatably disposed in the second pipe. The housing is provided on opposite sides of the semiconductor module, the first heat dissipation unit and the second heat dissipation unit and supports the semiconductor module, the first heat dissipation unit and the second heat dissipation unit.

    摘要翻译： 这里公开了半导体封装。 半导体封装包括半导体模块，第一散热单元，第二散热单元和壳体。 半导体模块包含半导体器件。 第一散热单元设置在半导体模块的下方。 第一散热单元包括至少一个第一冷却水通过的第一管道。 第一旋转体可旋转地设置在第一管中。 第二散热单元设置在半导体模块上。 第二散热单元包括至少一个第二冷却水通过的第二管道。 第二旋转体可旋转地设置在第二管中。 壳体设置在半导体模块，第一散热单元和第二散热单元的相对侧上，并且支撑半导体模块，第一散热单元和第二散热单元。

    Power semiconductor module
    9.
    发明授权
    Power semiconductor module 有权
    功率半导体模块

    公开(公告)号：US08796730B2

    公开(公告)日：2014-08-05

    申请号：US13313713

    申请日：2011-12-07

    申请人： Young Ki Lee ,  Dong Soo Seo ,  Kwang Soo Kim ,  Young Hoon Kwak

    发明人： Young Ki Lee ,  Dong Soo Seo ,  Kwang Soo Kim ,  Young Hoon Kwak

    IPC分类号： H01L29/739

    CPC分类号： H01L23/4824 ,  H01L29/7393 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed herein is a power semiconductor module including: a circuit board having gate, emitter, and collector patterns formed thereon; a first semiconductor chip mounted on the circuit board, having gate and emitter terminals each formed on one surface thereof, and having a collector terminal formed on the other surface thereof; a second semiconductor chip mounted on the first semiconductor chip, having a cathode terminal formed on one surface thereof, and having an anode terminal formed on the other surface thereof; a first conductive connection member having one end disposed between the collector terminal of the first semiconductor chip and the cathode terminal of the second semiconductor chip and the other end contacting the collector pattern of the circuit board; and a second conductive connection member having one end contacting the anode terminal of the second semiconductor chip and the other end contacting the emitter pattern of the circuit board.

    摘要翻译： 本文公开了一种功率半导体模块，包括：电路板，其上形成有栅极，发射极和集电极图案; 安装在所述电路板上的第一半导体芯片，在其一个表面上形成有栅极和发射极端子，并且在其另一个表面上形成集电极端子; 安装在所述第一半导体芯片上的第二半导体芯片，具有在其一个表面上形成的阴极端子，并且在其另一个表面上形成阳极端子; 第一导电连接构件，其一端设置在第一半导体芯片的集电极端子和第二半导体芯片的阴极端子之间，另一端接触电路板的集电体图案; 以及第二导电连接构件，其一端接触第二半导体芯片的阳极端子，另一端接触电路板的发射极图案。