利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

586 条记录 (耗时 0.046 秒)

    STRUCTURE AND METHOD OF FABRICATING A HINGE TYPE MEMS SWITCH
    4.
    发明申请
    STRUCTURE AND METHOD OF FABRICATING A HINGE TYPE MEMS SWITCH 失效
    铰链类型MEMS开关的结构和方法

    公开(公告)号：US20080014663A1

    公开(公告)日：2008-01-17

    申请号：US11776835

    申请日：2007-07-12

    申请人： Louis Hsu ,  Timothy Dalton ,  Lawrence Clevenger ,  Carl Radens ,  Kwong Wong ,  Chih-Chao Yang

    发明人： Louis Hsu ,  Timothy Dalton ,  Lawrence Clevenger ,  Carl Radens ,  Kwong Wong ,  Chih-Chao Yang

    IPC分类号： H01L21/00

    CPC分类号： H01H59/0009 ,  H01H1/20 ,  H01H2001/0084 ,  H01H2001/0089 ,  Y10T29/49105 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49204 ,  Y10T29/49208

    摘要： A hinge type MEMS switch that is fully integratable within a semiconductor fabrication process such as a CMOS, is described. The MEMS switch constructed on a substrate consists of two posts, each end thereof terminating in a cap; a rigid movable conductive plate having a surface terminating in a ring in each of two opposing edges, the rings being loosely connected to guiding posts; upper and lower electrode pairs; and upper and lower interconnect wiring lines connected and disconnected by the rigid movable conductive plate. When in the energized state, a low voltage level is applied to the upper electrode pair, while the lower electrode pair is grounded. The conductive plate moves up, shorting two upper interconnect wirings lines. Conversely, the conductive plate moves down when the voltage is applied to the lower electrode pair, while the upper electrode pair is grounded, shorting the two lower interconnect wiring lines and opening the upper wiring lines. The MEMS switch thus formed generates an even force that provides the conductive plate with a translational movement, with the displacement being guided by the two vertical posts.

    摘要翻译： 描述了在诸如CMOS之类的半导体制造工艺中可完全集成的铰链式MEMS开关。 构造在基板上的MEMS开关由两个柱构成，每个端部终止于盖; 刚性可移动导电板，其表面终止于两个相对边缘中的每一个中的环中，所述环松散地连接到引导柱; 上下电极对; 并且由刚性可移动导电板连接和断开的上下互连布线。 当处于通电状态时，低电压电平施加到上电极对，而下电极对接地。 导电板向上移动，使两条上部互连线路短路。 相反，当电压施加到下电极对时，导电板向下移动，而上电极对接地，使两个下互连布线短路并打开上布线。 由此形成的MEMS开关产生均匀的力，其为导电板提供平移运动，位移由两个垂直柱引导。

    STRUCTURE AND METHOD OF FABRICATING A HINGE TYPE MEMS SWITCH
    5.
    发明申请
    STRUCTURE AND METHOD OF FABRICATING A HINGE TYPE MEMS SWITCH 有权
    铰链类型MEMS开关的结构和方法

    公开(公告)号：US20060145792A1

    公开(公告)日：2006-07-06

    申请号：US10905449

    申请日：2005-01-05

    申请人： Louis Hsu ,  Timothy Dalton ,  Lawrence Clevenger ,  Carl Radens ,  Kwong Wong ,  Chih-Chao Yang

    发明人： Louis Hsu ,  Timothy Dalton ,  Lawrence Clevenger ,  Carl Radens ,  Kwong Wong ,  Chih-Chao Yang

    IPC分类号： H01H51/22

    CPC分类号： H01H59/0009 ,  H01H1/20 ,  H01H2001/0084 ,  H01H2001/0089 ,  Y10T29/49105 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49204 ,  Y10T29/49208

    摘要： A hinge type MEMS switch that is fully integratable within a semiconductor fabrication process, such as a CMOS, is described. The MEMS switch constructed on a substrate consists of two posts, each end thereof terminating in a cap; a movable conductive plate having a surface terminating in a ring in each of two opposing edges, the rings being loosely connected to guiding posts; an upper and lower electrode pairs; and upper and lower interconnect wiring lines connected and disconnected by the movable conductive plate. When in the energized state, a low voltage level is applied to the upper electrode pair, while the lower electrode pair is grounded. The conductive plate moves up, shorting two upper interconnect wirings lines. Conversely, the conductive plate moves down when the voltage is applied to the lower electrode pair, while the upper electrode pair is grounded, shorting the two lower interconnect wiring lines and opening the upper wiring lines. The MEMS switch thus formed generates an even force that provides the conductive plate with a translational movement, with the displacement being guided by the two vertical posts.

    摘要翻译： 描述了在诸如CMOS之类的半导体制造工艺中可完全集成的铰链式MEMS开关。 构造在基板上的MEMS开关由两个柱构成，每个端部终止于盖; 可移动导电板，其表面终止于两个相对边缘中的每一个中的环中，所述环松动地连接到引导柱; 上下电极对; 以及由可动导电板连接和断开的上下互连布线。 当处于通电状态时，低电压电平施加到上电极对，而下电极对接地。 导电板向上移动，使两条上部互连线路短路。 相反，当电压施加到下电极对时，导电板向下移动，而上电极对接地，使两个下互连布线短路并打开上布线。 由此形成的MEMS开关产生均匀的力，其为导电板提供平移运动，位移由两个垂直柱引导。

    Modified via bottom structure for reliability enhancement
    6.
    发明申请
    Modified via bottom structure for reliability enhancement 有权
    通过底部结构改进可靠性增强

    公开(公告)号：US20060081986A1

    公开(公告)日：2006-04-20

    申请号：US10964882

    申请日：2004-10-14

    申请人： Lawrence Clevenger ,  Timothy Dalton ,  Louis Hsu ,  Conal Murray ,  Carl Radens ,  Kwong-Hon Wong ,  Chih-Chao Yang

    发明人： Lawrence Clevenger ,  Timothy Dalton ,  Louis Hsu ,  Conal Murray ,  Carl Radens ,  Kwong-Hon Wong ,  Chih-Chao Yang

    IPC分类号： H01L23/52

    CPC分类号： H01L21/76802 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76847 ,  H01L21/76865 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： The present invention provides an interconnect structure that can be made in the BEOL which exhibits good mechanical contact during normal chip operations and does not fail during various reliability tests as compared with the conventional interconnect structures described above. The inventive interconnect structure has a kinked interface at the bottom of a via that is located within an interlayer dielectric layer. Specifically, the inventive interconnect structure includes a first dielectric layer having at least one metallic interconnect embedded within a surface thereof; a second dielectric layer located atop the first dielectric layer, wherein said second dielectric layer has at least one aperture having an upper line region and a lower via region, wherein the lower via region includes a kinked interface; at least one pair of liners located on at least vertical walls of the at least one aperture; and a conductive material filling the at least one aperture.

    摘要翻译： 本发明提供一种可以在BEOL中制造的互连结构，其在正常的芯片操作期间表现出良好的机械接触，并且在与上述的常规互连结构相比在各种可靠性测试期间不会失败。 本发明的互连结构在通孔的底部具有位于层间介质层内的扭结界面。 具体地，本发明的互连结构包括：第一介电层，其具有嵌入在其表面内的至少一个金属互连; 位于所述第一介电层顶部的第二电介质层，其中所述第二电介质层具有至少一个具有上线区域和下通孔区域的孔，其中所述下通孔区域包括扭结界面; 位于所述至少一个孔的至少垂直壁上的至少一对衬垫; 以及填充所述至少一个孔的导电材料。

    MICRO-CAVITY MEMS DEVICE AND METHOD OF FABRICATING SAME
    10.
    发明申请
    MICRO-CAVITY MEMS DEVICE AND METHOD OF FABRICATING SAME 失效
    微孔MEMS器件及其制造方法

    公开(公告)号：US20080092367A1

    公开(公告)日：2008-04-24

    申请号：US11968896

    申请日：2008-01-03

    申请人： Louis Hsu ,  Lawrence Clevenger ,  Timothy Dalton ,  Carl Radens ,  Keith Wong ,  Chih-Chao Yang

    发明人： Louis Hsu ,  Lawrence Clevenger ,  Timothy Dalton ,  Carl Radens ,  Keith Wong ,  Chih-Chao Yang

    IPC分类号： H01H11/00 ,  H01F41/04

    CPC分类号： H01H50/005 ,  H01H2050/007 ,  Y10T29/4902 ,  Y10T29/49105 ,  Y10T29/49147

    摘要： A method of fabricating a MEMS switch having a free moving inductive element within in micro-cavity guided by at least one inductive coil. The switch consists of an upper inductive coil at one end of a micro-cavity; optionally, a lower inductive coil; and a free-moving inductive element preferably made of magnetic material. The coils are provided with an inner permalloy core. Switching is achieved by passing a current through the upper coil, inducing a magnetic field unto the inductive element. The magnetic field attracts the free-moving inductive element upwards, shorting two open conductive wires, closing the switch. When the current flow stops or is reversed, the free-moving magnetic element drops back by gravity to the bottom of the micro-cavity and the conductive wires open. When the chip is not mounted with the correct orientation, the lower coil pulls the free-moving inductive element back at its original position.

    摘要翻译： 一种制造具有由至少一个感应线圈引导的微腔内的自由运动的感应元件的MEMS开关的方法。 开关由微腔一端的上感应线圈组成; 可选地，下感应线圈; 以及优选由磁性材料制成的自由移动的电感元件。 线圈设有内坡道合金芯。 通过使电流通过上部线圈，从而产生电感元件的磁场来实现切换。 磁场向上吸引自由移动的感应元件，短路两根开放的导线，闭合开关。 当电流停止或反转时，自由移动的磁性元件通过重力返回到微腔的底部并且导线打开。 当芯片没有以正确的方向安装时，下线圈将自由移动的感应元件拉回其原始位置。