公开(公告)号：US20110241050A1

公开(公告)日：2011-10-06

申请号：US13077254

申请日：2011-03-31

申请人： Kyung Hee YE ,  Chang Youn KIM ,  Jin Cheol SHIN ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

发明人： Kyung Hee YE ,  Chang Youn KIM ,  Jin Cheol SHIN ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

IPC分类号： H01L33/46

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

公开(公告)号：US20110241045A1

公开(公告)日：2011-10-06

申请号：US13018557

申请日：2011-02-01

申请人： Kyung Hee YE ,  Chang Youn KIM ,  Jin Cheol SHIN ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

发明人： Kyung Hee YE ,  Chang Youn KIM ,  Jin Cheol SHIN ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

IPC分类号： H01L33/46

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

摘要翻译： 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。

公开(公告)号：US20110163346A1

公开(公告)日：2011-07-07

申请号：US12974917

申请日：2010-12-21

申请人： Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

发明人： Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

IPC分类号： H01L33/42 ,  H01L33/36

CPC分类号： H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

摘要翻译： 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。

公开(公告)号：US20130009197A1

公开(公告)日：2013-01-10

申请号：US13617810

申请日：2012-09-14

申请人： Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

发明人： Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

IPC分类号： H01L33/36

CPC分类号： H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

摘要翻译： 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。

公开(公告)号：US20100163900A1

公开(公告)日：2010-07-01

申请号：US12624011

申请日：2009-11-23

申请人： Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

发明人： Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

IPC分类号： H01L33/00 ,  H01L21/30

CPC分类号： H01L33/007 ,  H01L27/156

摘要： Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.

摘要翻译： 公开了具有多个非极性发光单元的发光器件及其制造方法。 该方法包括制备具有上表面的蓝宝石或碳化硅的第一衬底，其具有r面，a面或m面。 第一衬底在其上表面上具有条状的抗生长图案，以及在抗生长图案之间具有c面侧壁的凹陷区域。 在具有凹陷区域的衬底上生长氮化物半导体层，并且将氮化物半导体层图案化以形成彼此分离的发光元件。 因此，提供了具有优异的晶体质量的非极性发光单元的发光器件。

公开(公告)号：US20120037881A1

公开(公告)日：2012-02-16

申请号：US12983499

申请日：2011-01-03

申请人： Kwang Joong KIM ,  Chang Suk HAN ,  Kyung Hee YE ,  Seung Kyu CHOI ,  Ki Bum NAM ,  Nam Yoon KIM ,  Kyung Hae KIM ,  Ju Hyung YOON

发明人： Kwang Joong KIM ,  Chang Suk HAN ,  Kyung Hee YE ,  Seung Kyu CHOI ,  Ki Bum NAM ,  Nam Yoon KIM ,  Kyung Hae KIM ,  Ju Hyung YOON

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/32

摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

摘要翻译： 本发明的示例性实施例公开了一种发光二极管，其包括掺杂有硅的n型接触层，p型接触层，设置在n型接触层和p型接触层之间的有源区，超晶格 所述超晶格层包括多个层，设置在所述超晶格层和所述n型接触层之间的未掺杂的中间层以及设置在所述未掺杂的中间层之间的电子增强层 层和超晶格层。 最靠近有源区的超晶格层的最终层被掺杂硅，并且最终层的硅掺杂浓度高于n型接触层的掺杂浓度。

公开(公告)号：US20100244727A1

公开(公告)日：2010-09-30

申请号：US12704881

申请日：2010-02-12

申请人： Kyung Hee YE ,  Hyun Gu Kang ,  Dae Sung Kal ,  Won Cheol Seo

发明人： Kyung Hee YE ,  Hyun Gu Kang ,  Dae Sung Kal ,  Won Cheol Seo

IPC分类号： H05B37/02

CPC分类号： H05B33/0809

摘要： A light-emitting diode (LED) driver used to power at least one LED with an alternating current (AC) voltage source is provided. The LED driver includes a rectifying unit applying N-fold higher voltage than the voltage from the AC voltage source to the LED. The rectifying unit includes a first charging unit to charge a first voltage, and a second charging unit to charge a second voltage. The first voltage includes the voltage at the AC voltage source during a first half-cycle of one AC voltage cycle, and the second voltage includes the first voltage and the voltage at the AC voltage source during the second half-cycle of the AC voltage cycle. Accordingly, the LED driver may improve light-emitting efficiency and reduce flicker of LEDs.

摘要翻译： 提供了用于为交流（AC）电压源至少一个LED供电的发光二极管（LED）驱动器。 LED驱动器包括整流单元，其施加比来自AC电压源的电压高出N倍的电压。 整流单元包括对第一电压充电的第一充电单元和用于对第二电压充电的第二充电单元。 第一电压包括在一个交流电压周期的第一个半周期期间的交流电压源处的电压，并且第二电压在交流电压周期的第二个半周期期间包括第一电压和交流电压源处的电压 。 因此，LED驱动器可以提高发光效率并减少LED的闪烁。

公开(公告)号：US20120235158A1

公开(公告)日：2012-09-20

申请号：US13482851

申请日：2012-05-29

申请人： Kwang Choong KIM ,  Won Cheol SEO ,  Dae Won KIM ,  Dae Sung KAL ,  Kyung Hee YE

发明人： Kwang Choong KIM ,  Won Cheol SEO ,  Dae Won KIM ,  Dae Sung KAL ,  Kyung Hee YE

IPC分类号： H01L33/40

CPC分类号： H01L33/32 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

摘要翻译： 本发明涉及具有多个非极性发光单元的发光器件及其制造方法。 氮化物半导体层设置在具有上表面的氮化镓衬底上。 上表面是非极性或半极性的晶体，相对于c面形成交叉角。 氮化物半导体层可以被图案化以形成彼此分离的发光单元。 当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。 凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

公开(公告)号：US20120104424A1

公开(公告)日：2012-05-03

申请号：US13345348

申请日：2012-01-06

申请人： Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

发明人： Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

IPC分类号： H01L33/08 ,  H01L33/60

CPC分类号： H01L33/007 ,  H01L27/156

摘要： Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.

摘要翻译： 公开了具有多个非极性发光单元的发光器件及其制造方法。 该方法包括制备具有上表面的蓝宝石或碳化硅的第一衬底，其具有r面，a面或m面。 第一衬底在其上表面上具有条状的抗生长图案，以及在抗生长图案之间具有c面侧壁的凹陷区域。 在具有凹陷区域的衬底上生长氮化物半导体层，并且将氮化物半导体层图案化以形成彼此分离的发光元件。 因此，提供了具有优异的晶体质量的非极性发光单元的发光器件。

公开(公告)号：US20110222285A1

公开(公告)日：2011-09-15

申请号：US13009284

申请日：2011-01-19

申请人： Kyung Hee YE ,  Dae Sung Kal ,  Won Cheol Seo ,  Young Eun Yang ,  Sum Geun Lee

发明人： Kyung Hee YE ,  Dae Sung Kal ,  Won Cheol Seo ,  Young Eun Yang ,  Sum Geun Lee

IPC分类号： F21S4/00

CPC分类号： H01L33/08 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H05B33/0821 ,  H01L2924/00

摘要： The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units. The half-wave light emitting units and the full-wave light emitting units each have at least one light emitting cell, the half-wave light emitting units each have a first terminal and a second terminal, the full-wave light emitting units each have a third terminal having the same polarity as the first terminal and a fourth terminal having the same polarity as the second terminal, and the third terminal of each full-wave light emitting unit being connected to the second terminal of adjacent half-wave light emitting units and the fourth terminal of each half-wave light emitting unit being connected to the first terminal of adjacent half-wave light emitting units.

摘要翻译： 本发明涉及一种包括至少三对半波发光单元的发光器件，每一对包括连接到第二半波发光单元的端子的第一半波发光单元的端子， 具有相同极性的端子，一个半波发光单元对的连接端子的极性与相邻半波发光单元的连接端子的极性相反。 发光器件还包括至少两个全波发光单元，每个全波发光单元各自连接到相邻的半波发光单元对。 半波发光单元和全波发光单元各自具有至少一个发光单元，半波发光单元各自具有第一端子和第二端子，全波发光单元各自具有 具有与第一端子极性相同的第三端子和与第二端子具有相同极性的第四端子，并且每个全波发光单元的第三端子连接到相邻半波发射单元的第二端子 并且每个半波发光单元的第四端子连接到相邻的半波发光单元的第一端子。