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1.发明授权公开(公告)号：US10309010B2
公开(公告)日：2019-06-04
申请号：US14765090
申请日：2014-01-31
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , Satoko Gatineau , Changhee Ko , Jean-Marc Girard , Julien Gatineau
IPC分类号： C23C16/06 , C07F15/06 , C23C16/18 , C23C16/34 , C23C16/40 , C23C16/42 , C23C16/455 , C23C16/28 , H01L21/285 , H01L21/768
摘要： Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R1, R2, R3, R4 and R5 is independently selected from the group consisting of hydrogen and linear, cyclic, or branched hydrocarbon groups; provided that (a) R1≠R2 and/or R3 when R1 and R2 and R3 are a hydrocarbon group; (b) R1 and R2 are a hydrocarbon group when R3 is H; or (c) R1 is a C2-C4 hydrocarbon group when R2 and R3 are H.
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公开(公告)号：US08753718B2
公开(公告)日：2014-06-17
申请号：US13773354
申请日：2013-02-21
CPC分类号： H01L21/02175 , C23C16/18 , C23C16/406
摘要： The invention concerns the use of the ruthenium-containing precursor having the formula (Rn-chd)Ru(CO)3, wherein: (Rn-chd) represents a cyclohexadiene (chd) ligand substituted with n substituents R, any R being in any position on the chd ligand; n is an integer comprised between 1 and 8 (1≦n≦8) and represents the number of substituents on the chd ligand; R is selected from the group consisting of C1-C4 linear or branched alkyls, alkylamides, alkoxides, alkylsilylamides, amidinates, carbonyl and/or fluoroalkyl for R being located in any of the eight available position on the chd ligand, while R can also be oxygen O for substitution on the C positions in the chd cycle which are not involved in a double bond for the deposition of a Ru containing film on a substrate.
摘要翻译： 本发明涉及具有式（Rn-chd）Ru（CO）3的含钌前体的用途，其中：（Rn-chd）表示被n个取代基R取代的环己二烯（chd）配体，任何R均为任何 在配体上的位置; n是1至8（1＆nlE; n＆nlE; 8）之间的整数，并且表示chd配体上的取代基数; R选自C1-C4直链或支链烷基，烷基酰胺，烷氧基化物，烷基甲硅烷基酰胺，脒基，羰基和/或氟烷基，其中R位于chd配体上的八个可用位置中的任一个中，而R也可以是 用于在chd循环中的C位置上用于在基底上沉积含Ru膜的双键中的氧气。
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公开(公告)号：US09543144B2
公开(公告)日：2017-01-10
申请号：US14587833
申请日：2014-12-31
IPC分类号： C23C16/30 , H01L21/02 , C23C16/455
CPC分类号： H01L21/02568 , C23C16/305 , C23C16/45553 , H01L21/02551 , H01L21/0262
摘要： Chalcogenide-containing film forming compositions, methods of synthesizing the same, and methods of forming Chalcogenide-containing films on one or more substrates via vapor deposition processes using the Chalcogenide-containing film forming compositions are disclosed.
摘要翻译： 公开了含硫族化物的成膜组合物，其合成方法，以及通过使用含硫族化合物的成膜组合物的气相沉积方法在一个或多个基材上形成含硫族化合物的膜的方法。
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4.发明授权Titanium-aluminum alloy deposition with titanium-tetrahydroaluminate bimetallic molecules 有权钛 - 铝合金沉积与四氢铝酸双金属分子公开(公告)号：US09187511B2
公开(公告)日：2015-11-17
申请号：US13780212
申请日：2013-02-28
CPC分类号： C07F19/005 , C07F5/06
摘要： Disclosed are titanium-tetrahydroaluminates precursors, their method of manufacture, and their use in the deposition of titanium-aluminum-containing films. The disclosed precursors have the formulae Ti(AlH4)3—X, Ti(AlH4)2L and Ti(AlH4)L2. The disclosed precursors may be used to deposit pure titanium-aluminum (TiAl), titanium-aluminum nitride (TiAlN), titanium-aluminum carbide (TiAlC), titanium-aluminum carbonitride (TiAlCN), titanium-aluminum silicide ((TiAl)Si), titanium-aluminum siliconitride ((TiAl)SiN), titanium-aluminum boron ((TiAl)B), titanium-aluminum boron nitride ((TiAl)BN), or titanium-aluminum oxide (TiAlO). or any other titanium-aluminum-containing films. The titanium-aluminum-containing films may be deposited using the disclosed precursors in thermal and/or plasma-enhanced CVD, ALD, pulse CVD or any other type of depositions methods.
摘要翻译： 公开了钛 - 四氢铝酸盐前体，其制造方法及其在沉积含钛铝膜中的用途。 所公开的前体具有式Ti（AlH 4）3-X，Ti（AlH 4）2 L和Ti（AlH 4）2 L）。 所公开的前体可用于沉积纯钛 - 铝（TiAl），钛 - 氮化铝（TiAlN），钛 - 碳化铝（TiAlC），钛 - 铝碳氮化物（TiAlCN），钛 - 硅化铝（（TiAl）Si） ，钛 - 铝硅氮化物（（TiAl）SiN），钛 - 铝硼（（TiAl）B），钛 - 氮化硼（（TiAl）BN））或钛 - 氧化铝（TiAlO）。 或任何其它含钛铝膜。 可以使用所公开的前体在热和/或等离子体增强CVD，ALD，脉冲CVD或任何其它类型的沉积方法中沉积含钛铝膜。
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5.发明申请METHOD FOR THE DEPOSITION OF A RUTHENIUM CONTAINING FILM USING ARENE DIAZADIENE RUTHENIUM(0) PRECURSORS 有权使用ARENE DIAZADIENE RUTHENIUM（0）PRECURSORS沉积包含薄膜的方法公开(公告)号：US20150056384A1
公开(公告)日：2015-02-26
申请号：US14377294
申请日：2012-11-30
CPC分类号： C23C16/18 , C07F15/0046 , C23C16/50 , H01L21/28556 , H01L21/28562 , H01L21/76841
摘要： The invention concerns the use of ruthenium containing precursors having the formula (1) wherein R1, R2 . . . R10 are independently selected from H, C1-C4 linear, branched, or cyclic alkyl group, C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or trisalkyl), C1-C4 linear, branched, or cyclic alkylamino group, or a C1-C4 linear, branched, or cyclic fluoroalkyl group (totally fluorinated or not); for the deposition of a Ru containing film on a substrate.
摘要翻译： 本发明涉及具有式（1）的含钌前体的用途，其中R1，R2。 。 。 R 10独立地选自H，C 1 -C 4直链，支链或环状烷基，C 1 -C 4直链，支链或环状烷基甲硅烷基（单，双或三烷基），C 1 -C 4直链，支链或环状烷基氨基 ，或C 1 -C 4直链，支链或环状氟代烷基（全氟化或不全部）。 用于在基板上沉积含Ru膜。
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6.发明授权Method for the deposition of a ruthenium containing film using arene diazadiene ruthenium(0) precursors 有权使用芳族二亚甲基二钌（O）前体沉积含钌膜的方法公开(公告)号：US09416443B2
公开(公告)日：2016-08-16
申请号：US14377294
申请日：2012-11-30
IPC分类号： C23C16/18 , C07F15/00 , C23C16/50 , H01L21/285 , H01L21/768
CPC分类号： C23C16/18 , C07F15/0046 , C23C16/50 , H01L21/28556 , H01L21/28562 , H01L21/76841
摘要： The invention concerns the use of ruthenium containing precursors having the formula (1) wherein R1, R2 . . . R10 are independently selected from H, C1-C4 linear, branched, or cyclic alkyl group, C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or trisalkyl), C1-C4 linear, branched, or cyclic alkylamino group, or a C1-C4 linear, branched, or cyclic fluoroalkyl group (totally fluorinated or not); for the deposition of a Ru containing film on a substrate.
摘要翻译： 本发明涉及具有式（1）的含钌前体的用途，其中R1，R2。 。 。 R 10独立地选自H，C 1 -C 4直链，支链或环状烷基，C 1 -C 4直链，支链或环状烷基甲硅烷基（单，双或三烷基），C 1 -C 4直链，支链或环状烷基氨基 ，或C 1 -C 4直链，支链或环状氟代烷基（全氟化或不全部）。 用于在基板上沉积含Ru膜。
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公开(公告)号：US20190027357A1
公开(公告)日：2019-01-24
申请号：US16107069
申请日：2018-08-21
发明人： Jean-Marc Girard , Changhee Ko , Ivan Oshchepkov , Kazutaka Yanagita , Shingo Okubo , Naoto Noda , Julien Gatineau , Yann Martelat
摘要： Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
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8.发明授权公开(公告)号：US09790591B2
公开(公告)日：2017-10-17
申请号：US14954319
申请日：2015-11-30
CPC分类号： C23C16/18 , C23C16/34 , C23C16/405 , C23C16/4402
摘要： Titanium-containing film forming compositions are disclosed as well as methods of synthesizing the same and methods of forming Titanium-containing films on substrates via vapor deposition processes using the Titanium-containing film forming compositions. The Titanium-containing film forming compositions comprise a precursor having the formula Ti(R5Cp)2(L), wherein each R is independently H, an alkyl group, or R′3Si, with each R′ independently being H or an alkyl group; L is selected from the group consisting of formamidinates (NR,R′-fmd) or amidinates (NR,R′R″-amd).
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9.发明授权Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions 有权镍二氮杂二烯前体，它们的合成及其在含镍膜沉积中的用途公开(公告)号：US09206507B2
公开(公告)日：2015-12-08
申请号：US14347544
申请日：2012-09-27
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
IPC分类号： C23C16/18 , C23C16/455 , H01L21/285 , C23C16/42
CPC分类号： C23C16/18 , C23C16/42 , C23C16/45553 , H01L21/28518 , H01L21/28556
摘要： Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD)2, wherein R-DAD stands for substituted 1,4-diazabuta-1,3-diene ligands. The sole presence of the Ni—N bonds was also considered to avoid too high intrusion of other elements, such as carbon, into the nickel-containing films. The flexibility of the Ni—N bond in terms of film deposition also allows using the molecules for nickel, nickel-nitride, nickel-carbonitride, nickel oxide or any other type of nickel-containing films. The nickel-containing film depositions can be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD or any other type of depositions methods.
摘要翻译： 公开了用于含镍膜气相沉积的均匀二氮杂双环镍前体。 前体具有通式Ni（R-DAD）2，其中R-DAD代表取代的1,4-二氮杂双酚-1,3-二烯配体。 还考虑到Ni-N键的唯一存在，以避免其它元素如碳含量过高地侵入到含镍膜中。 Ni-N键在膜沉积方面的灵活性还允许将分子用于镍，氮化镍，镍 - 碳氮化物，氧化镍或任何其它类型的含镍膜。 含镍膜沉积可以通过热和/或等离子体增强的CVD，ALD和脉冲CVD或任何其它类型的沉积方法进行。
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公开(公告)号：US09633838B2
公开(公告)日：2017-04-25
申请号：US14979816
申请日：2015-12-28
发明人： Jean-Marc Girard , Changhee Ko , Ivan Oshchepkov , Kazutaka Yanagita , Shingo Okubo , Naoto Noda , Julien Gatineau
IPC分类号： H01L21/02 , C23C16/455 , C23C16/40 , C23C16/34 , C23C16/24
CPC分类号： H01L21/0228 , C23C16/24 , C23C16/325 , C23C16/345 , C23C16/36 , C23C16/402 , C23C16/45553 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02208 , H01L21/02211 , H01L21/02236 , H01L21/02247 , H01L21/02271 , H01L21/02277 , H01L21/02529 , H01L21/02532 , H01L21/0262
摘要： Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
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