公开(公告)号：US20240218509A1

公开(公告)日：2024-07-04

申请号：US18427691

申请日：2024-01-30

Applicant: Lam Research Corporation

Inventor： Bhadri N. VARADARAJAN ,  Bo GONG ,  Rachel E. BATZER ,  Huatan QIU ,  Bart J. VAN SCHRAVENDIJK ,  Geoffrey HOHN

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  C23C16/458 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32

CPC classification number: C23C16/45525 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/32486

Abstract: Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates. The apparatus may be configured to cause formation and reconditioning of the low recombination material coating.

公开(公告)号：US20210257188A1

公开(公告)日：2021-08-19

申请号：US17258584

申请日：2019-07-08

Applicant: LAM RESEARCH CORPORATION

Inventor： Eller Y. JUCO ,  Karl Frederick LEESER ,  Huatan QIU

IPC: H01J37/32

Abstract: A multi-signal radio frequency (RF) source includes an RF source; and a switch including an input in communication with an output of the RF source, a first output and a second output. The switch is configured to selectively connect the input to one of the first output and the second output. An RF generator in communication with the first output of the multi-signal RF source is configured to generate plasma in a processing chamber. A remote plasma generator in communication with the second output of the multi-signal RF source is configured to supply remote plasma to the processing chamber.

公开(公告)号：US20240003008A1

公开(公告)日：2024-01-04

申请号：US18037146

申请日：2021-12-01

Applicant: LAM RESEARCH CORPORATION

Inventor： Saangrut SANGPLUG ,  Aaron DURBIN ,  Murthi MURUGAIYAN ,  Aaron Blake MILLER ,  Huatan QIU ,  Gopinath BHIMARASETTI ,  Vikrant RAI ,  Vincent WILSON

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45561

Abstract: A precursor dispensing system includes a source, an ampoule, a first valve, a second valve, a line charge volume container and a controller. The source supplies a liquid precursor. The ampoule receives the liquid precursor from the source. The first valve adjusts flow of the liquid precursor from the source to the ampoule. The second valve adjusts flow of a precursor vapor from the ampoule to a showerhead of a substrate processing chamber. The line charge volume container is connected to a conduit and stores a charge of the precursor vapor, where the conduit extends from the ampoule to the second valve. The controller: opens the first valve and closes the second valve to precharge the line charge volume container; and during a dose operation, open the second valve to dispense a bulk amount of the precursor vapor from the line charge volume container and into the substrate processing chamber.

公开(公告)号：US20230332291A1

公开(公告)日：2023-10-19

申请号：US18245623

申请日：2021-09-21

Applicant: Lam Research Corporation

Inventor： Bhadri VARADARAJAN ,  Aaron DURBIN ,  Huatan QIU ,  Bo GONG ,  Rachel E. BATZER ,  Gopinath BHIMARASETTI ,  Aaron Blake MILLER ,  Patrick G. BREILING ,  Geoffrey HOHN

IPC: C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45565 ,  H01J37/3244 ,  H01J37/32357

Abstract: A showerhead comprises first, second, and third components. The first component includes a disc-shaped portion and a cylindrical portion extending perpendicularly from the disc-shaped portion. The disc-shaped portion includes first and second sets of holes having first and second diameters, respectively, that extend from a center of the disc-shaped portion to an inner diameter of the cylindrical portion. The second component is disc-shaped and is attached to the disc-shaped portion of the first component, defines a plenum that is in fluid communication with the second set of holes, and includes a pair of arc-shaped grooves along a periphery and on opposite ends of the top surface and a plurality of grooves extending between the pair of arc-shaped grooves. The third component is disc-shaped, is attached to the second component, and includes a gas inlet connected to the plenum, and fluid inlet and outlet connected to the arc-shaped grooves.

公开(公告)号：US20230304156A1

公开(公告)日：2023-09-28

申请号：US18327558

申请日：2023-06-01

Applicant: Lam Research Corporation

Inventor： Geoffrey HOHN ,  Huatan QIU ,  Rachel E. BATZER ,  Guangbi YUAN ,  Zhe GUI

IPC: C23C16/458 ,  H01L21/687 ,  C23C16/505

CPC classification number: C23C16/4585 ,  H01L21/68785 ,  H01L21/68742 ,  H01L21/68757 ,  C23C16/4586 ,  C23C16/4581 ,  C23C16/505

Abstract: An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.

公开(公告)号：US20230002891A1

公开(公告)日：2023-01-05

申请号：US17930397

申请日：2022-09-07

Applicant: Lam Research Corporation

Inventor： Damodar Rajaram SHANBHAG ,  Guangbi YUAN ,  Thadeous BAMFORD ,  Curtis Warren BAILEY ,  Tony KAUSHAL ,  Krishna BIRRU ,  William SCHLOSSER ,  Bo GONG ,  Huatan QIU ,  Fengyuan LAI ,  Leonard Wai Fung KHO ,  Anand CHANDRASHEKAR ,  Andrew H. BRENINGER ,  Chen-Hua HSU ,  Geoffrey HOHN ,  Gang LIU ,  Rohit KHARE

IPC: C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/40

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

公开(公告)号：US20220275504A1

公开(公告)日：2022-09-01

申请号：US17663614

申请日：2022-05-16

Applicant: Lam Research Corporation

Inventor： Damodar Rajaram SHANBHAG ,  Guangbi YUAN ,  Thadeous BAMFORD ,  Curtis Warren BAILEY ,  Tony KAUSHAL ,  Krishna BIRRU ,  William SCHLOSSER ,  Bo GONG ,  Huatan QIU ,  Fengyuan LAI ,  Leonard Wai Fung KHO ,  Anand CHANDRASHEKAR ,  Andrew H. BRENINGER ,  Chen-Hua HSU ,  Geoffrey HOHN ,  Gang LIU ,  Rohit KHARE

IPC: C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/40

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

公开(公告)号：US20210384028A1

公开(公告)日：2021-12-09

申请号：US17285814

申请日：2019-10-11

Applicant: Lam Research Corporation

Inventor： James S. SIMS ,  Shane TANG ,  Vikrant RAI ,  Andrew MCKERROW ,  Huatan QIU

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67

Abstract: A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.

公开(公告)号：US20230175134A1

公开(公告)日：2023-06-08

申请号：US18163828

申请日：2023-02-02

Applicant: Lam Research Corporation

Inventor： Rachel E. BATZER ,  Huatan QIU ,  Bhadri N. VARADARAJAN ,  Patrick Girard BREILING ,  Bo GONG ,  Will SCHLOSSER ,  Zhe GUI ,  Taide TAN ,  Geoffrey HOHN

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505 ,  H01L21/67 ,  H01L21/687

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32422 ,  C23C16/505 ,  H01J37/32522 ,  H01J37/32082 ,  H01J37/32715 ,  H01L21/67011 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785 ,  B05C13/02

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

公开(公告)号：US20230005776A1

公开(公告)日：2023-01-05

申请号：US17784422

申请日：2020-12-16

Applicant: LAM RESEARCH CORPORATION

Inventor： Prasanna KULKARNI ,  Huatan QIU ,  Brian Joseph WILLIAMS ,  Ted TAN

IPC: H01L21/677 ,  H01L21/687 ,  H01J37/32

Abstract: A system includes a plurality of spindle arms located above a plurality of stations in a processing chamber to transport a semiconductor substrate between the stations. The spindle arms reside in the processing chamber during processing of the semiconductor substrate. The system comprises first gas lines arranged below the stations to supply a purge gas. The system comprises second gas lines extending upwards from the first gas lines to supply the purge gas to the spindle arms during the processing of the semiconductor substrate in the processing chamber.