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    USE OF SIGNAL FILTERING SCHEMES IN HIGH TCR BASED CONTROL
    1.
    发明公开
    USE OF SIGNAL FILTERING SCHEMES IN HIGH TCR BASED CONTROL 审中-公开

    公开(公告)号：US20240203763A1

    公开(公告)日：2024-06-20

    申请号：US18288144

    申请日：2022-04-25

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Ramesh CHANDRASEKHARAN ,  Mohan THILAGARAJ ,  Karl Frederick LEESER

    IPC: H01L21/67 ,  C23C16/458 ,  C23C16/46

    CPC classification number: H01L21/67103 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/67248

    Abstract: A controller to control a temperature of a first substrate support in a substrate processing system includes a resistance calculation module to calculate a first resistance of a first heater element of a plurality of heater elements of the first substrate support, a temperature calculation module to calculate a first temperature of the first heater element based on the calculated first resistance, and a filter module to filter a first signal that corresponds to the calculated first resistance. The temperature calculation module selectively causes the filter module to filter the first signal in response to a determination of whether at least one condition associated with operation of the substrate processing system is met.

    RADIO FREQUENCY (RF) SIGNAL SOURCE SUPPLYING RF PLASMA GENERATOR AND REMOTE PLASMA GENERATOR
    2.
    发明申请
    RADIO FREQUENCY (RF) SIGNAL SOURCE SUPPLYING RF PLASMA GENERATOR AND REMOTE PLASMA GENERATOR 有权

    公开(公告)号：US20210257188A1

    公开(公告)日：2021-08-19

    申请号：US17258584

    申请日：2019-07-08

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Eller Y. JUCO ,  Karl Frederick LEESER ,  Huatan QIU

    IPC: H01J37/32

    Abstract: A multi-signal radio frequency (RF) source includes an RF source; and a switch including an input in communication with an output of the RF source, a first output and a second output. The switch is configured to selectively connect the input to one of the first output and the second output. An RF generator in communication with the first output of the multi-signal RF source is configured to generate plasma in a processing chamber. A remote plasma generator in communication with the second output of the multi-signal RF source is configured to supply remote plasma to the processing chamber.

    JOINING TECHNIQUES FOR COMPOSITE CERAMIC BODIES
    6.
    发明申请
    JOINING TECHNIQUES FOR COMPOSITE CERAMIC BODIES 有权

    公开(公告)号：US20240379316A1

    公开(公告)日：2024-11-14

    申请号：US18688223

    申请日：2022-08-29

    Applicant: Lam Research Corporation

    Inventor： Karl Frederick LEESER

    IPC: H01J9/34 ,  C04B37/00 ,  H01J37/32

    Abstract: In joining composite ceramic bodies, at least one ceramic body is a compositionally graded with varying concentrations between two or more ceramic materials. The compositionally graded ceramic body terminates at an interfacial layer that is substantially composed of a single ceramic material. The compositionally graded ceramic body is joined to another ceramic body that may also be compositionally graded or made of a single ceramic material, and an interfacial layer of the other ceramic body is identical in composition with the interfacial layer of the compositionally graded ceramic body. In some embodiments, the ceramic bodies may be joined by diffusion bonding. In some embodiments, the ceramic bodies include a ceramic platen and ceramic stem of a wafer pedestal implemented in a plasma processing apparatus.

    MECHANICAL SUPPRESSION OF PARASITIC PLASMA IN SUBSTRATE PROCESSING CHAMBER
    7.
    发明申请
    MECHANICAL SUPPRESSION OF PARASITIC PLASMA IN SUBSTRATE PROCESSING CHAMBER 审中-公开

    公开(公告)号：US20190172684A1

    公开(公告)日：2019-06-06

    申请号：US16267932

    申请日：2019-02-05

    Applicant: Lam Research Corporation

    Inventor： Douglas KEIL ,  Edward J. AUGUSTYNIAK ,  Karl Frederick LEESER ,  Mohamed SABRI

    IPC: H01J37/32

    Abstract: A system includes an electrode. The electrode includes a showerhead having a first stem portion and a head portion. A plurality of dielectric layers is vertically stacked between the electrode and a first surface of a conducting structure. The plurality of dielectric layers includes M dielectric layers arranged adjacent to the head portion and P dielectric portions arranged around the first stem portion. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface. A number of the plurality of dielectric layers and sizes of the first gap, the second gap, and the third gap are selected to prevent parasitic plasma between the first surface and the electrode.

    SUBSTRATE PROCESSING TOOL WITH RAPID AND SELECTIVE CONTROL OF PARTIAL PRESSURE OF WATER VAPOR AND OXYGEN
    8.
    发明申请
    SUBSTRATE PROCESSING TOOL WITH RAPID AND SELECTIVE CONTROL OF PARTIAL PRESSURE OF WATER VAPOR AND OXYGEN 有权

    公开(公告)号：US20250038011A1

    公开(公告)日：2025-01-30

    申请号：US18706772

    申请日：2022-11-01

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Richard H. GOULD ,  Karl Frederick LEESER ,  Michael NORDIN ,  Jose VELASCO

    IPC: H01L21/67

    Abstract: A substrate processing tool includes: a first processing module; a vacuum transfer module connected to the first processing module; one or more pumps; a backfill source; and one or more controllers. The one or more controllers are configured to: control the one or more pumps to reduce a chamber pressure in the vacuum transfer module from a first chamber pressure to a second chamber pressure and then backfill the vacuum transfer module with an inert gas to a third chamber pressure prior to permitting transfer of a substrate into the first processing module; subsequent to backfilling the vacuum transfer module, cause a transfer of the substrate from the vacuum transfer module to the first processing module; and cause the first processing module to process the substrate.

    MECHANICAL SUPPRESSION OF PARASITIC PLASMA IN SUBSTRATE PROCESSING CHAMBER
    9.
    发明公开
    MECHANICAL SUPPRESSION OF PARASITIC PLASMA IN SUBSTRATE PROCESSING CHAMBER 审中-公开

    公开(公告)号：US20230238220A1

    公开(公告)日：2023-07-27

    申请号：US18129370

    申请日：2023-03-31

    Applicant: Lam Research Corporation

    Inventor： Douglas KEIL ,  Edward J. AUGUSTYNIAK ,  Karl Frederick LEESER ,  Mohamed SABRI

    IPC: H01J37/32 ,  C23C16/455

    CPC classification number: H01J37/32495 ,  H01J37/3244 ,  H01J37/32623 ,  C23C16/45565 ,  H01J37/3255 ,  H01J37/32091

    Abstract: A system includes an electrode. The electrode includes a showerhead having a first stem portion and a head portion. A plurality of dielectric layers is vertically stacked between the electrode and a first surface of a conducting structure. The plurality of dielectric layers includes M dielectric layers arranged adjacent to the head portion and P dielectric portions arranged around the first stem portion. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface. A number of the plurality of dielectric layers and sizes of the first gap, the second gap, and the third gap are selected to prevent parasitic plasma between the first surface and the electrode.

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