Printed circuit board and manufacturing method therefor

    公开(公告)号:US11464117B2

    公开(公告)日:2022-10-04

    申请号:US16651143

    申请日:2018-09-18

    Abstract: A printed circuit board according to one embodiment of the present invention comprises an insulation board and a plurality of metal electrodes disposed on the insulation board, wherein: the plurality of metal electrodes include a first electrode and a second electrode; the first electrode includes a first surface parallel to an upper surface of the insulation board, a second surface facing the first surface, a first side surface disposed between the first surface and the second surface, and a second side surface facing the first side surface; a part of the first side surface and a part of the second side surface protrude toward the outside of the first electrode in the direction parallel to the upper surface of the insulation board; the first side surface protrudes farther in an area adjacent to the first surface than in an area adjacent to the second surface; and the second side surface protrudes farther in the area adjacent to the second surface than in the area adjacent to the first surface.

    Hot plate and method of manufacturing the same

    公开(公告)号:US09657394B2

    公开(公告)日:2017-05-23

    申请号:US14353199

    申请日:2012-10-19

    CPC classification number: C23C26/00 C23C16/4581 H01L21/67103

    Abstract: Disclosed are a hot plate and a method of manufacturing the same. The method includes the steps of preparing a first barrier layer, laminating a first heat transfer layer on the first barrier layer, and laminating a second barrier layer on the first heat transfer layer. The first barrier layer or the second barrier layer includes a plurality of first sub-nano-barrier layers and a plurality of second sub-nano-barrier layers. The hot plate includes a first barrier layer, a first heat transfer layer on the first barrier layer, and a second barrier layer on the first heat transfer layer. The first barrier layer or the second barrier layer includes a plurality of first sub-nano-barrier layers and a plurality of second sub-nano-barrier layers.

    WAFER AND METHOD OF FABRICATING THE SAME
    3.
    发明申请
    WAFER AND METHOD OF FABRICATING THE SAME 有权
    WAFER及其制作方法

    公开(公告)号:US20140284627A1

    公开(公告)日:2014-09-25

    申请号:US14354858

    申请日:2012-10-26

    Inventor: Moo Seong Kim

    Abstract: Disclosed is a method of manufacturing a thin film, the method including: growing an epitaxial layer on a surface of a wafer at a growth temperature, wherein the growing of the epitaxial layer comprises controlling a defect present on a surface of the wafer. Also, disclosed is a wafer including: a substrate; and an epitaxial layer located on the substrate, wherein a basal dislocation density of the epitaxial layer is equal to or less than 1/cm2.

    Abstract translation: 公开了一种制造薄膜的方法,该方法包括:在生长温度下在晶片的表面上生长外延层,其中外延层的生长包括控制晶片表面上存在的缺陷。 此外,公开了一种晶片,包括:基板; 以及位于所述衬底上的外延层,其中所述外延层的基底位错密度等于或小于1 / cm 2。

    Circuit board including a buffer layer for improving

    公开(公告)号:US12256489B2

    公开(公告)日:2025-03-18

    申请号:US17928703

    申请日:2021-06-10

    Abstract: A circuit board according to an embodiment comprises: an insulation layer; a circuit pattern disposed on the upper surface or under the lower surface of the insulation layer; and a buffer layer disposed on at least one surface of the upper surface and the lower surface of the insulation layer, wherein the buffer layer includes carbon, nitrogen, and oxygen, the ratio of the nitrogen to the carbon ((carbon/nitrogen)*100) is 5 to 15, and the ratio of the oxygen to the carbon ((carbon/oxygen)*100) is 15 to 30.

Patent Agency Ranking