公开(公告)号：US20190386180A1

公开(公告)日：2019-12-19

申请号：US16466993

申请日：2017-12-06

Applicant: LG INNOTEK CO., LTD.

Inventor： Sung Min HWANG ,  Sun Woo PARK ,  Chang Hyeong LEE

IPC: H01L33/40 ,  F21K9/00 ,  H01L33/10 ,  H01L33/62 ,  H01L33/38 ,  H01L33/46 ,  H01L33/30 ,  H01L33/42

Abstract: The embodiments of the present invention relate to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device.A light emitting device according to an embodiment has: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a passivation layer disposed on the light emitting structure; and an insulating reflective layer disposed on the passivation layer.The passivation layer may include a first region disposed on an upper surface of the light emitting structure, and a second region disposed on side surfaces of the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer.The insulating reflective layer may be disposed on the first region, and an end portion of the insulating reflective layer may be disposed apart from an end portion of the first region.

公开(公告)号：US20130328092A1

公开(公告)日：2013-12-12

申请号：US13963877

申请日：2013-08-09

Applicant: LG INNOTEK CO., LTD.

Inventor： Sung Min HWANG ,  Hyun Don SONG ,  Hyun Kyong CHO

IPC: H01L33/48

CPC classification number: H01L33/60 ,  H01L33/0033 ,  H01L33/145 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/48 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.

公开(公告)号：US20210135059A1

公开(公告)日：2021-05-06

申请号：US16492069

申请日：2018-01-18

Applicant: LG INNOTEK CO., LTD.

Inventor： Chang Hyeong LEE ,  Gyu Hyeong BAK ,  Yong Seon SONG ,  Byung Yeon CHOI ,  Sung Min HWANG

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/62

Abstract: A semiconductor device according to an embodiment may include a light emitting structure, a first electrode, a second electrode, a first insulating reflective layer, a second insulating reflective layer, a first bonding pad, and a second bonding pad. The light emitting structure may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first insulating reflective layer may be disposed on the first electrode and the second electrode, and may include a first opening exposing an upper surface of the first electrode. The second insulating reflective layer may be disposed on the first electrode and the second electrode, and disposed spaced apart from the first insulating reflective layer, and may include a second opening exposing an upper surface of the second electrode. The first bonding pad may be electrically connected to the first electrode through the first opening. The second bonding pad may be electrically connected to the second electrode through the second opening.

公开(公告)号：US20190019929A1

公开(公告)日：2019-01-17

申请号：US16035306

申请日：2018-07-13

Applicant: LG INNOTEK CO., LTD.

Inventor： Chang Man LIM ,  Ki Seok KIM ,  Young Shin KIM ,  June O SONG ,  Ju Hyeon OH ,  Chang Hyeong LEE ,  Tae Sung LEE ,  Se Yeon JUNG ,  Byung Yeon CHOI ,  Sung Min HWANG

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/44 ,  H01L33/48 ,  H01L33/50 ,  H01L33/56 ,  H01L33/60

CPC classification number: H01L33/62 ,  H01L33/382 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/56 ,  H01L33/60 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: The light emitting device package disclosed in the embodiment includes: first and second frames having first and second through holes; a body disposed between the first and second frames; a light emitting device including a first bonding pad and a second bonding pad; and a conductive part in the first and second through holes. wherein at least one of the first and second bonding pads faces the first and second frames and overlaps with the first and second through holes and includes a contact region contacting the conductive part and a first non-contact non-contacting the conducive part.

公开(公告)号：US20160072018A1

公开(公告)日：2016-03-10

申请号：US14931638

申请日：2015-11-03

Applicant: LG INNOTEK CO., LTD.

Inventor： So Yeong OH ,  Sung Min HWANG

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/42

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/28 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed herein is a light emitting device exhibiting improved current spreading. The disclosed light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type and second conductivity type semiconductor layers, a first electrode disposed on the first conductivity type semiconductor layer, and a second electrode disposed on the second conductivity type semiconductor layer. The light emitting structure includes a mesa etching region where the second conductivity type semiconductor layer, active layer, and first conductivity type semiconductor layer are partially etched, thereby exposing a portion of the first conductivity type semiconductor layer. The first electrode is disposed on the exposed portion of the first conductivity type semiconductor layer. A first electrode layer is disposed between the second conductivity type semiconductor layer and the second electrode. A second electrode layer is disposed between portions of the first electrode layer spaced from each other at opposite sides of the mesa etching region.

Abstract translation: 本文公开了一种显示出改进的电流扩展的发光器件。 所公开的发光器件包括：发光结构，包括第一导电类型半导体层，第二导电类型半导体层和设置在第一导电类型和第二导电类型半导体层之间的有源层;第一电极，设置在第一导电性 型半导体层和设置在第二导电类型半导体层上的第二电极。 发光结构包括台阶蚀刻区域，其中第二导电类型半导体层，有源层和第一导电类型半导体层被部分蚀刻，从而暴露第一导电类型半导体层的一部分。 第一电极设置在第一导电类型半导体层的暴露部分上。 第一电极层设置在第二导电类型半导体层和第二电极之间。 第二电极层设置在第一电极层的在台面蚀刻区域的相对侧彼此间隔开的部分之间。

公开(公告)号：US20130161675A1

公开(公告)日：2013-06-27

申请号：US13724398

申请日：2012-12-21

Applicant: LG INNOTEK CO., LTD.

Inventor： Kwang Chil LEE ,  Sung Min HWANG

IPC: H01L33/60

CPC classification number: H01L33/44 ,  G02B1/007 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a light emitting device. The light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers; and a light extraction structure on the light emitting structure. The light extraction structure comprises a plurality of first layers and a plurality of second layers which are alternately disposed with each other to have a negative refraction index.

Abstract translation: 公开了一种发光器件。 发光器件包括包含多个化合物半导体层的发光结构; 以及在发光结构上的光提取结构。 光提取结构包括多个第一层和多个彼此交替布置以具有负折射率的第二层。

公开(公告)号：US20190341536A1

公开(公告)日：2019-11-07

申请号：US16480924

申请日：2017-12-27

Applicant: LG INNOTEK CO., LTD.

Inventor： Byung Yeon CHOI ,  Chang Hyeong LEE ,  Sung Min HWANG

IPC: H01L33/62 ,  H01L23/00 ,  H01L33/48 ,  H01L33/50 ,  H01L33/56 ,  H01L33/60 ,  C22C13/00 ,  B23K35/26

Abstract: A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.

公开(公告)号：US20150060927A1

公开(公告)日：2015-03-05

申请号：US14535122

申请日：2014-11-06

Applicant: LG Innotek Co., Ltd.

Inventor： Sung Min HWANG ,  Hyun Don SONG ,  Hyun Kyong CHO

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/14 ,  H01L33/00

CPC classification number: H01L33/60 ,  H01L33/0033 ,  H01L33/145 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/48 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.

Abstract translation: 描述了包括第二导电类型半导体层的发光器件; 在所述第二导电类型半导体层上方的有源层; 在有源层上的第一导电类型半导体层; 在第二导电类型半导体层下面的第一区域中的第二电极; 包括金属的电流阻挡层; 以及位于第一导电类型半导体层上的第一电极。 此外，第一电极具有与电流阻挡层垂直重叠的至少一个部分。

公开(公告)号：US20140374785A1

公开(公告)日：2014-12-25

申请号：US14308101

申请日：2014-06-18

Applicant: LG INNOTEK CO., LTD.

Inventor： So Yeong OH ,  Sung Min HWANG

IPC: H01L33/42 ,  H01L33/32 ,  H01L33/28 ,  H01L33/60

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/28 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed herein is a light emitting device exhibiting improved current spreading. The disclosed light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type and second conductivity type semiconductor layers, a first electrode disposed on the first conductivity type semiconductor layer, and a second electrode disposed on the second conductivity type semiconductor layer. The light emitting structure includes a mesa etching region where the second conductivity type semiconductor layer, active layer, and first conductivity type semiconductor layer are partially etched, thereby exposing a portion of the first conductivity type semiconductor layer. The first electrode is disposed on the exposed portion of the first conductivity type semiconductor layer. A first electrode layer is disposed between the second conductivity type semiconductor layer and the second electrode. A second electrode layer is disposed between portions of the first electrode layer spaced from each other at opposite sides of the mesa etching region.

Abstract translation: 本文公开了一种显示出改进的电流扩展的发光器件。 所公开的发光器件包括：发光结构，包括第一导电类型半导体层，第二导电类型半导体层和设置在第一导电类型和第二导电类型半导体层之间的有源层;第一电极，设置在第一导电性 型半导体层和设置在第二导电类型半导体层上的第二电极。 发光结构包括台阶蚀刻区域，其中第二导电类型半导体层，有源层和第一导电类型半导体层被部分蚀刻，从而暴露第一导电类型半导体层的一部分。 第一电极设置在第一导电类型半导体层的暴露部分上。 第一电极层设置在第二导电类型半导体层和第二电极之间。 第二电极层设置在第一电极层的在台面蚀刻区域的相对侧彼此间隔开的部分之间。