利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

309 条记录 (耗时 0.034 秒)

    Patterning microelectronic features without using photoresists
    1.
    发明授权
    Patterning microelectronic features without using photoresists 失效
    图案化微电子特征，而不使用光致抗蚀剂

    公开(公告)号：US06452110B1

    公开(公告)日：2002-09-17

    申请号：US09897889

    申请日：2001-07-05

    申请人： Lawrence A. Clevenger ,  Louis L. Hsu ,  Carl J. Radens ,  Li-Kong Wang ,  Keith Kwong Hon Wong

    发明人： Lawrence A. Clevenger ,  Louis L. Hsu ,  Carl J. Radens ,  Li-Kong Wang ,  Keith Kwong Hon Wong

    IPC分类号： H05K109

    CPC分类号： H05K3/02 ,  H01L21/288 ,  H01L21/32134 ,  H01L21/76885 ,  Y10T29/49155 ,  Y10T29/49156

    摘要： A method and structure for producing metallic polymer conductor lines comprising of an alternative methodology to a traditional damascene approach, called a cloisonne or inverse damascene approach. The cloisonne approach comprises the steps of coating a photosensitive polymer such as pyrrole or aniline with a silver salt on a semiconductor substrate. Using standard photolithography and resist developing techniques, the conducting polymer is exposed to a wet chemical developer, removing a portion of the exposed conducting polymer region, leaving only conducting polymer lines on top of the substrate. Next, an insulating dielectric layer is deposited over the entire structure and a chemical mechanical polish planarization of the insulator is performed creating the conducting polymer lines. Included in another aspect of the invention is a method and structure for a self-planarizing interconnect material comprising a conductive polymer thereby reducing the number of processing steps relative to the prior art.

    摘要翻译： 一种用于生产金属聚合物导体线的方法和结构，其包括传统大马士革方法的替代方法，称为景泰蓝或逆大马士革方法。 景泰蓝方法包括在半导体衬底上用银盐将光敏聚合物如吡咯或苯胺涂覆的步骤。 使用标准光刻和抗蚀显影技术，将导电聚合物暴露于湿化学显影剂，除去暴露的导电聚合物区域的一部分，仅在基底顶部留下导电聚合物线。 接下来，在整个结构上沉积绝缘电介质层，并进行绝缘体的化学机械抛光平面化，产生导电聚合物线。 包括在本发明的另一方面中的是一种用于自平坦化互连材料的方法和结构，其包括导电聚合物，从而减少相对于现有技术的加工步骤的数量。

    Three-dimensional island pixel photo-sensor
    5.
    发明授权
    Three-dimensional island pixel photo-sensor 有权
    三维岛像素光电传感器

    公开(公告)号：US06720595B2

    公开(公告)日：2004-04-13

    申请号：US09922077

    申请日：2001-08-06

    申请人： Lawrence A. Clevenger ,  Louis L. Hsu ,  Carl J. Radens ,  Li-Kong Wang ,  Kwong Hon Wong

    发明人： Lawrence A. Clevenger ,  Louis L. Hsu ,  Carl J. Radens ,  Li-Kong Wang ,  Kwong Hon Wong

    IPC分类号： H01L31062

    CPC分类号： H01L27/14634 ,  H01L27/1463 ,  H01L27/14643

    摘要： A method and structure for a photodiode array comprising a plurality of photodiode cores, light sensing sidewalls along an exterior of the cores, logic circuitry above the cores, trenches separating the cores, and a transparent material in the trenches is disclosed. With the invention, the sidewalls are perpendicular to the surface of the photodiode that receives incident light. The light sensing sidewalls comprise a junction region that causes electron transfer when struck with light. The sidewalls comprise four vertical sidewalls around each island core. The logic circuitry blocks light from the core so light is primarily only sensed by the sidewalls.

    摘要翻译： 公开了一种用于光电二极管阵列的方法和结构，该阵列包括多个光电二极管芯，沿芯的外部的感光侧壁，芯之上的逻辑电路，分离芯的沟槽和沟槽中的透明材料。 利用本发明，侧壁垂直于接收入射光的光电二极管的表面。 感光侧壁包括当用光照射时引起电子转移的结区域。 侧壁包围围绕每个岛芯的四个垂直侧壁。 逻辑电路阻挡来自芯的光，因此光仅主要由侧壁感测。

    Structure and method for shadow mask electrode
    7.
    发明授权
    Structure and method for shadow mask electrode 有权
    荫罩电极的结构和方法

    公开(公告)号：US06768063B2

    公开(公告)日：2004-07-27

    申请号：US09943827

    申请日：2001-08-31

    申请人： Lawrence A. Clevenger ,  Louis L. Hsu ,  Carl J. Radens ,  Li-Kong Wang ,  Kwong Hon Wong

    发明人： Lawrence A. Clevenger ,  Louis L. Hsu ,  Carl J. Radens ,  Li-Kong Wang ,  Kwong Hon Wong

    IPC分类号： H05K111

    CPC分类号： H05K3/24 ,  G01N27/226 ,  H01L23/4824 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and structure for an electrode device, whereby a second electrode is deposited on a first electrode such that there is an increase in the capacitive coupling between the pair of conductive electrodes. The electrodes are self-aligning such that the patterning manufacturing process is insensitive to variations in the positional placement of the pattern on the substrate. Moreover, a single lithographic masking layer is used for forming the pair of electrodes, which are electrically isolated. Finally, the first electrode is offset from the second electrode by a chemical surface modification of the first electrode, and an anisotropic deposition of the second electrode which is shadowed by the first electrode.

    摘要翻译： 一种电极装置的方法和结构，由此第二电极沉积在第一电极上，使得一对导电电极之间的电容耦合增加。 电极是自对准的，使得图案化制造工艺对图案在衬底上的位置放置的变化不敏感。 此外，单个光刻掩模层用于形成电隔离的一对电极。 最后，第一电极通过第一电极的化学表面改性和由第一电极遮蔽的第二电极的各向异性沉积而偏离第二电极。