Field emission display having an offset phosphor and method for the operation thereof
    1.
    发明授权
    Field emission display having an offset phosphor and method for the operation thereof 失效
    具有偏移荧光体的场发射显示器及其操作方法

    公开(公告)号:US06225761B1

    公开(公告)日:2001-05-01

    申请号:US09406410

    申请日:1999-09-27

    IPC分类号: G09G104

    摘要: A field emission display (100, 200, 300) includes a plurality of offset phosphors (126) and a cathode plate (110). Cathode plate (110) has a plurality of non-electron-emissive structures (112), a plurality of electron-emissive pixels (108), and a plurality of focusing electrodes (106). Offset phosphors (126) are aligned one each with non-electron-emissive structures (112) of cathode plate (110). Focusing electrodes (106) are disposed to cause a plurality of emission currents (134), which are generated by electron-emissive pixels (108), to be directed one each toward offset phosphors (126). Ions liberated from offset phosphors (126) are received by non-electron-emissive structures (112) of cathode plate (110), thereby ameliorating ion bombardment of electron-emissive pixels (108).

    摘要翻译: 场发射显示器(100,200,300)包括多个偏移荧光体(126)和阴极板(110)。 阴极板(110)具有多个非电子发射结构(112),多个电子发射像素(108)和多个聚焦电极(106)。 偏置荧光体(126)各自具有阴极板(110)的非电子发射结构(112)。 设置聚焦电极(106)以使由电子发射像素(108)产生的多个发射电流(134)被引导到偏移的磷光体(126)。 从偏移荧光体(126)释放的离子由阴极板(110)的非电子发射结构(112)接收,从而改善电子发射像素(108)的离子轰击。

    Field emission device
    2.
    发明授权
    Field emission device 失效
    场发射装置

    公开(公告)号:US5760535A

    公开(公告)日:1998-06-02

    申请号:US740583

    申请日:1996-10-31

    IPC分类号: H01J1/304 H01J3/02 H01J1/02

    CPC分类号: H01J3/022 H01J2201/025

    摘要: A field emission device (200, 300, 400, 500) includes a supporting substrate (210, 310, 410, 510), a cathode (215, 315, 415, 515) formed thereon, a plurality of electron emitters (270, 370, 470, 570) and a plurality of gate extraction electrodes (250, 350, 450, 550) proximately disposed to the plurality of electron emitters (270, 370, 470, 570) for effecting electron emission therefrom, a major dielectric surface (248, 348, 448, 548) disposed between the plurality of gate extraction electrodes (250, 350, 450, 550), a charge dissipation layer (252, 352, 452, 552) formed on the major dielectric surface (248, 348, 448, 548), and an anode (280, 380, 480, 580) spaced from the gate extraction electrodes (250, 350, 450, 550).

    摘要翻译: 场致发射器件(200,300,400,500)包括支撑衬底(210,310,410,510),形成在其上的阴极(215,315,415,515),多个电子发射器(270,370 ,多个栅极引出电极(250,350,450,550),所述多个栅极引出电极(250,350,450,550)近似地设置在所述多个电子发射器(270,370,470,570)中,用于从其发射电子发射,主电介质表面(248 ,348,448,548),其布置在所述多个栅极引出电极(250,350,450,550)之间,形成在所述主电介质表面(248,348,448)上的电荷耗散层(252,352,452,552) ,548)以及与栅极引出电极(250,350,450,550)间隔开的阳极(280,380,480,580)。

    Ballistic charge transport device with integral active contaminant
absorption means
    3.
    发明授权
    Ballistic charge transport device with integral active contaminant absorption means 失效
    具有积分有源污染物吸收手段的弹道电荷输送装置

    公开(公告)号:US5502348A

    公开(公告)日:1996-03-26

    申请号:US169232

    申请日:1993-12-20

    摘要: A ballistic charge transport device including an edge electron emitter defining an elongated central opening therethrough with a receiving terminal (e.g. an anode) at one end of the opening and a getter at the other end. A suitable potential is applied between the emitter and the receiving terminal to attract emitted electrons to the receiving terminal and a different suitable potential is applied between the emitter and the getter so that contaminants, such as ions and other undesirable particles, are accelerated toward and absorbed by the getter.

    摘要翻译: 一种弹道电荷传输装置,包括边缘电子发射体,其限定了在开口的一端处具有接收端子(例如阳极)的细长中心开口和另一端的吸气剂。 在发射极和接收端子之间施加合适的电位以将发射的电子吸引到接收端子,并且在发射极和吸气剂之间施加不同的合适电势,使得诸如离子和其它不期望的颗粒的污染物被加速并被吸收 由吸气者。

    Super high frequency oscillator/resonator
    5.
    发明授权
    Super high frequency oscillator/resonator 失效
    超高频振荡器/谐振器

    公开(公告)号:US5023503A

    公开(公告)日:1991-06-11

    申请号:US460454

    申请日:1990-01-03

    CPC分类号: H03H9/17

    摘要: A method of filtering an AC signal using a piezoelectric beam is provided. A piezoelectric film is formed on a mechanical support and a portion of the piezoelectric film forms a beam which extends beyond the mechanical support so that a cavity is formed underneath the beam, and the beam is free to vibrate in the cavity at a resonant frequency when an acoustic wave is propagated in the piezoelectric layer.A depletion region is formed under a Schottky contact which serves as a drive electrode. An unfiltered AC signal is coupled to the drive electrode thereby establishing an acoustic wave when the unfiltered AC signal comprises a component at the resonant frequency. Surface charge on the piezoelectric film resulting from vibration of the beam allows the resonant frequency component of the unfiltered AC signal to pass through the depletion region. Alternatively, the resonant frequency component can be passed by a tunnel current through the cavity.

    摘要翻译: 提供了使用压电束对AC信号进行滤波的方法。 在机械支架上形成压电薄膜,并且压电薄膜的一部分形成一个延伸超过机械支架的光束,从而在光束的下方形成空腔,并且光束以谐振频率自由地在空腔中振动, 声波在压电层中传播。 在用作驱动电极的肖特基接触下形成耗尽区。 未过滤的AC信号耦合到驱动电极,从而当未滤波的AC信号包括谐振频率处的分量时建立声波。 由光束的振动导致的压电膜上的表面电荷允许未滤波的AC信号的谐振频率分量通过耗尽区。 或者,谐振频率分量可以通过隧道电流通过空腔。

    Si-GaP-Si heterojunction bipolar transistor (HBT) on Si substrate
    6.
    发明授权
    Si-GaP-Si heterojunction bipolar transistor (HBT) on Si substrate 失效
    Si-GaP-Si异质结双极晶体管(HBT)

    公开(公告)号:US4959702A

    公开(公告)日:1990-09-25

    申请号:US417417

    申请日:1989-10-05

    IPC分类号: H01L29/737

    CPC分类号: H01L29/7378

    摘要: A heterojunction bipolar transistor (HBT) is provided having a silicon substrate in which a conventional junction base is formed. A coherently strained layer of semiconductor material having a wider band gap than silicon, such as gallium phosphide, is formed over the base to form a first portion of an emitter multilayer. A second portion of the emitter multilayer comprises silicon which can be epitaxially grown on the coherently strained layer. A thin heteropotential barrier is thus formed at the base-emitter junction which preferentially allows electrons to move from emitter to base while significantly reducing hole current from base to emitter, thereby improving emitter injection efficiency and current gain.

    摘要翻译: 提供了具有其中形成常规接合基底的硅衬底的异质结双极晶体管(HBT)。 在基底上形成具有比硅更宽带隙的诸如磷化镓的相干应变层的半导体材料以形成发射极多层的第一部分。 发射极多层的第二部分包括可在相干应变层上外延生长的硅。 因此,在基极 - 发射极结处形成薄的势能势垒,其优先地允许电子从发射极移动到基极,同时显着减少从基极到发射极的空穴电流,从而提高发射极注入效率和电流增益。

    Field emission device having stamped substrate and method
    8.
    发明授权
    Field emission device having stamped substrate and method 失效
    具有冲压基板和方法的场致发射器件

    公开(公告)号:US6114802A

    公开(公告)日:2000-09-05

    申请号:US808382

    申请日:1997-02-28

    摘要: A field emission device (400) includes a plastically-deformable, ceramic, stamped substrate (200) made from a plastically deformable ceramic, which in the preferred embodiment includes a calendered tape. The plastically-deformable, ceramic, stamped substrate (200) includes first and second opposed surfaces (202, 204) and defines apertures (206) in which are formed extraction electrodes (410). The field emission device (400) further includes an electron-emissive layer (418) being formed on the first opposed surface (202). Cathodes (420) are disposed on the electron-emissive layer (418) and cross the extraction electrodes (410) at an angle of 90.degree.. A method for fabricating said field emission device (400) includes stamping a layer (100) of the softened calendered tape with a die (300) to define the apertures (206) and grooves (208, 212, 214).

    摘要翻译: 场致发射器件(400)包括由可塑性变形的陶瓷制成的可塑性变形的陶瓷冲压衬底(200),在优选实施例中,其包括压延带。 塑性可变形的陶瓷冲压衬底(200)包括第一和第二相对表面(202,204)并且限定孔(206),其中形成有引出电极(410)。 场发射器件(400)还包括形成在第一相对表面(202)上的电子发射层(418)。 阴极(420)设置在电子发射层(418)上,并以90°的角度与提取电极(410)交叉。 制造所述场发射装置(400)的方法包括用模具(300)冲压软化的压延带的层(100)以限定孔(206)和凹槽(208,212,214)。

    Method for affixing spacers within a flat panel display
    9.
    发明授权
    Method for affixing spacers within a flat panel display 失效
    在平板显示器内固定间隔物的方法

    公开(公告)号:US5811927A

    公开(公告)日:1998-09-22

    申请号:US667556

    申请日:1996-06-21

    摘要: A method for affixing a plurality of spacers (102) within a field emission display (160) is disclosed. The method includes the steps of: (i) providing a plurality of members (104), (ii) coating an edge (106) of each of the plurality of members (104) with a metal to provide a bonding layer (108), (iii) forming a metallic bonding pad (132) on the inner surface of an anode (120) to provide a modified anode (130), (iv) affixing a plurality of metallic compliant members (112) to the bonding layer (108) by using ball bonding techniques, and (v) affixing the metallic compliant members (112) to the metallic bonding pad (132), while positioning the spacer (102) perpendicularly with respect to the modified anode (130), by using thermocompression metal bonding techniques.

    摘要翻译: 公开了一种用于在场发射显示器(160)内固定多个间隔物(102)的方法。 该方法包括以下步骤:(i)提供多个构件(104),(ii)用金属涂覆多个构件(104)中的每一个的边缘(106)以提供结合层(108), (iii)在阳极(120)的内表面上形成金属焊盘(132)以提供改性阳极(130),(iv)将多个金属柔性构件(112)固定到所述粘合层(108) 通过使用球接合技术,并且(v)将金属柔性构件(112)固定到金属接合垫(132)上,同时通过使用热压金属接合将间隔件(102)相对于改性阳极(130)垂直定位 技术

    Single substrate, vacuum fluorescent display
    10.
    发明授权
    Single substrate, vacuum fluorescent display 失效
    单基板,真空荧光显示

    公开(公告)号:US5345141A

    公开(公告)日:1994-09-06

    申请号:US45407

    申请日:1993-03-29

    摘要: A single substrate, vacuum fluorescent display including a first layer of electrically conductive material positioned on a supporting substrate and a light emitting layer including phosphor positioned on the first layer. A second layer of electrically conductive material is supported on the substrate and electrically insulated from the first layer. An electron emitting layer of low work function material is positioned on the second layer and further positioned so that emitted electrons strike the light emitting layer. Since both the electron emitting and the light emitting layers are supported on the substrate, an encapsulating window is simple and easy to construct. Integrated drivers are optionally formed in the supporting substrate.

    摘要翻译: 单个基板,真空荧光显示器,其包括位于支撑基板上的第一导电材料层和包含位于第一层上的荧光体的发光层。 第二层导电材料被支撑在基底上并与第一层电绝缘。 低功函数材料的电子发射层位于第二层上,并进一步定位成使得发射的电子撞击发光层。 由于电子发射层和发光层都被支撑在基板上,所以封装窗口简单易于构造。 集成驱动器可选地形成在支撑基板中。