公开(公告)号：US20060180931A1

公开(公告)日：2006-08-17

申请号：US11058913

申请日：2005-02-15

申请人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Zhang

发明人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Zhang

IPC分类号： H01L23/52

CPC分类号： H01L21/568 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49524 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/37099 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor package and method for making a semiconductor package are disclosed. The semiconductor package has a top surface and a mounting surface and includes a die, a conducting connecting material, a plating material and an insulating material. The die has a processed surface facing towards the mounting surface of the semiconductor package. Exposed metal connections are at the processed surface of the die. The conducting connecting material is disposed on the exposed metal connections. The plating material is in contact with the conducting connecting material. The insulating material is formed around the conducting connecting material, and the plating material extends to the exterior of the insulating material.

摘要翻译： 公开了半导体封装和制造半导体封装的方法。 半导体封装具有顶表面和安装表面，并且包括管芯，导电连接材料，电镀材料和绝缘材料。 模具具有朝向半导体封装的安装表面的处理表面。 暴露的金属连接处于模具的加工表面。 导电连接材料设置在暴露的金属连接上。 电镀材料与导电连接材料接触。 绝缘材料围绕导电连接材料形成，电镀材料延伸到绝缘材料的外部。

公开(公告)号：US20060145319A1

公开(公告)日：2006-07-06

申请号：US11027081

申请日：2004-12-31

申请人： Ming Sun ,  Kai Liu ,  Xiao Zhang ,  Yueh Ho ,  Leeshawn Luo

发明人： Ming Sun ,  Kai Liu ,  Xiao Zhang ,  Yueh Ho ,  Leeshawn Luo

IPC分类号： H01L23/02

CPC分类号： H01L23/49562 ,  H01L21/6835 ,  H01L23/49575 ,  H01L24/33 ,  H01L24/36 ,  H01L24/39 ,  H01L24/83 ,  H01L24/97 ,  H01L2221/68354 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01065 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/37099 ,  H01L2924/206

摘要： This invention discloses a power device package for containing, protecting and providing electrical contacts for a power transistor. The power device package includes a top and bottom lead frames for directly no-bump attaching to the power transistor. The power transistor is attached to the bottom lead frame as a flip-chip with a source contact and a gate contact directly no-bumping attaching to the bottom lead frame. The power transistor has a bottom drain contact attaching to the top lead frame. The top lead frame further includes an extension for providing a bottom drain electrode substantially on a same side with the bottom lead frame. In a preferred embodiment, the power device package further includes a joint layer between device metal of source, gate or drain and top or bottom lead frame, through applying ultrasonic energy. In another embodiment, a layer of conductive epoxy or adhesive, a solder paste, a carbon paste, or other types of attachment agents for direct no-bumping attaching the power transistor to one of the top and bottom lead frames.

公开(公告)号：US20080233679A1

公开(公告)日：2008-09-25

申请号：US12154537

申请日：2008-05-22

申请人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

发明人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

IPC分类号： H01L21/58

CPC分类号： H01L21/568 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49524 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/37099 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor package and method for making a semiconductor package are disclosed. The semiconductor package has a top surface and a mounting surface and includes a die, a conducting connecting material, a plating material and an insulating material. The die has a processed surface facing towards the mounting surface of the semiconductor package. Exposed metal connections are at the processed surface of the die. The conducting connecting material is disposed on the exposed metal connections. The plating material is in contact with the conducting connecting material. The insulating material is formed around the conducting connecting material, and the plating material extends to the exterior of the insulating material.

摘要翻译： 公开了半导体封装和制造半导体封装的方法。 半导体封装具有顶表面和安装表面，并且包括管芯，导电连接材料，电镀材料和绝缘材料。 模具具有朝向半导体封装的安装表面的处理表面。 暴露的金属连接处于模具的加工表面。 导电连接材料设置在暴露的金属连接上。 电镀材料与导电连接材料接触。 绝缘材料围绕导电连接材料形成，电镀材料延伸到绝缘材料的外部。

公开(公告)号：US20080211070A1

公开(公告)日：2008-09-04

申请号：US11894240

申请日：2008-03-31

申请人： Ming Sun ,  Kai Liu ,  Xiao Tian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

发明人： Ming Sun ,  Kai Liu ,  Xiao Tian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

IPC分类号： H01L23/495

CPC分类号： H01L29/7813 ,  H01L24/33 ,  H01L29/045 ,  H01L29/4236 ,  H01L29/66734 ,  H01L29/7811 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00

摘要： This invention discloses a power device package for containing, protecting and providing electrical contacts for a power transistor. The power device package includes a top and bottom lead frames for directly no-bump attaching to the power transistor. The power transistor is attached to the bottom lead frame as a flip-chip with a source contact and a gate contact directly no-bumping attaching to the bottom lead frame. The power transistor has a bottom drain contact attaching to the top lead frame. The top lead frame further includes an extension for providing a bottom drain electrode substantially on a same side with the bottom lead frame. In a preferred embodiment, the power device package further includes a joint layer between device metal of source, gate or drain and top or bottom lead frame, through applying ultrasonic energy. In another embodiment, a layer of conductive epoxy or adhesive, a solder paste, a carbon paste, or other types of attachment agents for direct no-bumping attaching the power transistor to one of the top and bottom lead frames.

摘要翻译： 本发明公开了一种功率器件封装，用于容纳，保护和提供功率晶体管的电触头。 功率器件封装包括用于直接不连接到功率晶体管的顶部和底部引线框架。 功率晶体管作为具有源极接触的倒装芯片附接到底部引线框架，并且栅极接触件直接地不连接到底部引线框架上。 功率晶体管具有附接到顶部引线框架的底部漏极接触。 顶部引线框架还包括用于提供与底部引线框架基本上在同一侧上的底部漏极电极的延伸部分。 在优选实施例中，功率器件封装还包括通过施加超声波能量的源极，栅极或漏极以及顶部或底部引线框架的器件金属之间的接合层。 在另一个实施方案中，导电环氧树脂或粘合剂层，焊膏，碳糊或其它类型的附着剂用于将功率晶体管附接到顶引线框架和底引线框架之一的直接无凸起。

公开(公告)号：US09337132B2

公开(公告)日：2016-05-10

申请号：US14052711

申请日：2013-10-12

申请人： Ming Sun ,  Kai Liu ,  Xiaotian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

发明人： Ming Sun ,  Kai Liu ,  Xiaotian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

IPC分类号： H01L23/495 ,  H01L29/78 ,  H01L23/00 ,  H01L29/66 ,  H01L23/492

CPC分类号： H01L23/49562 ,  H01L23/492 ,  H01L23/4928 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/97 ,  H01L29/66477 ,  H01L29/78 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/83895 ,  H01L2224/97 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2924/014

摘要： A power device package for containing, protecting and providing electrical contacts for a power transistor includes a top and bottom lead frames for directly no-bump attaching to the power transistor. The power transistor is attached to the bottom lead frame as a flip-chip with a source contact and a gate contact directly no-bumping attaching to the bottom lead frame. The power transistor has a bottom drain contact attaching to the top lead frame. The top lead frame further includes an extension for providing a bottom drain electrode substantially on a same side with the bottom lead frame. In a preferred embodiment, the power device package further includes a joint layer between device metal of source, gate or drain and top or bottom lead frame, through applying ultrasonic energy.

摘要翻译： 用于容纳，保护和提供用于功率晶体管的电触头的功率器件封装包括用于直接不连接到功率晶体管的顶部和底部引线框架。 功率晶体管作为具有源极接触的倒装芯片附接到底部引线框架，并且栅极接触件直接地不连接到底部引线框架上。 功率晶体管具有附接到顶部引线框架的底部漏极接触。 顶部引线框架还包括用于提供与底部引线框架基本上在同一侧上的底部漏极电极的延伸部分。 在优选实施例中，功率器件封装还包括通过施加超声波能量的源极，栅极或漏极以及顶部或底部引线框架的器件金属之间的接合层。

公开(公告)号：US20090233403A1

公开(公告)日：2009-09-17

申请号：US12474089

申请日：2009-05-28

申请人： Kai Liu ,  Xiaotian Zhang ,  Ming Sun ,  Leeshawn Luo

发明人： Kai Liu ,  Xiaotian Zhang ,  Ming Sun ,  Leeshawn Luo

IPC分类号： H01L21/60

CPC分类号： H01L24/48 ,  H01L23/3107 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/45 ,  H01L24/49 ,  H01L24/83 ,  H01L2224/04042 ,  H01L2224/05555 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/00012

摘要： A DFN semiconductor package includes a leadframe having a die bonding pad formed integrally with a drain lead, a gate lead and a source lead, a die coupled to the die bonding pad, a die source bonding area coupled to the source lead and a die gate bonding area coupled to the gate lead, and an encapsulant at least partially covering the die, drain lead, gate lead and source lead.

摘要翻译： DFN半导体封装包括引线框架，其具有与漏极引线，栅极引线和源极引线一体形成的管芯焊接焊盘，耦合到管芯焊接焊盘的管芯，耦合到源极引线的管芯源极接合区域和管芯栅极 键合区域，以及密封剂，其至少部分地覆盖晶片，漏极引线，栅极引线和源极引线。

公开(公告)号：US07394151B2

公开(公告)日：2008-07-01

申请号：US11058913

申请日：2005-02-15

申请人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

发明人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

IPC分类号： H01L23/48

CPC分类号： H01L21/568 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49524 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/37099 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor package and method for making a semiconductor package are disclosed. The semiconductor package has a top surface and a mounting surface and includes a die, a conducting connecting material, a plating material and an insulating material. The die has a processed surface facing towards the mounting surface of the semiconductor package. Exposed metal connections are at the processed surface of the die. The conducting connecting material is disposed on the exposed metal connections. The plating material is in contact with the conducting connecting material. The insulating material is formed around the conducting connecting material, and the plating material extends to the exterior of the insulating material.

公开(公告)号：US07897438B2

公开(公告)日：2011-03-01

申请号：US12154537

申请日：2008-05-22

申请人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

发明人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

IPC分类号： H01L21/00

CPC分类号： H01L21/568 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49524 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/37099 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor package and method for making a semiconductor package are disclosed. The semiconductor package has a top surface and a mounting surface and includes a die, a conducting connecting material, a plating material and an insulating material. The die has a processed surface facing towards the mounting surface of the semiconductor package. Exposed metal connections are at the processed surface of the die. The conducting connecting material is disposed on the exposed metal connections. The plating material is in contact with the conducting connecting material. The insulating material is formed around the conducting connecting material, and the plating material extends to the exterior of the insulating material.

摘要翻译： 公开了半导体封装和制造半导体封装的方法。 半导体封装具有顶表面和安装表面，并且包括管芯，导电连接材料，电镀材料和绝缘材料。 模具具有朝向半导体封装的安装表面的处理表面。 暴露的金属连接处于模具的加工表面。 导电连接材料设置在暴露的金属连接上。 电镀材料与导电连接材料接触。 绝缘材料围绕导电连接材料形成，电镀材料延伸到绝缘材料的外部。

公开(公告)号：US20060145312A1

公开(公告)日：2006-07-06

申请号：US11029653

申请日：2005-01-05

申请人： Kai Liu ,  Xiaotian Zhang ,  Ming Sun ,  Leeshawn Luo

发明人： Kai Liu ,  Xiaotian Zhang ,  Ming Sun ,  Leeshawn Luo

IPC分类号： H01L23/495 ,  H01L23/48

CPC分类号： H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/4943 ,  H01L2224/85 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A DFN semiconductor package includes a leadframe having a die bonding pad formed integrally with a drain lead, a gate lead and a source lead, a die coupled to the die bonding pad, a die source bonding area coupled to the source lead and a die gate bonding area coupled to the gate lead, and an encapsulant at least partially covering the die, drain lead, gate lead and source lead.

摘要翻译： DFN半导体封装包括引线框架，其具有与漏极引线，栅极引线和源极引线一体形成的管芯焊接焊盘，耦合到管芯焊接焊盘的管芯，耦合到源极引线的管芯源极接合区域和管芯栅极 键合区域，以及密封剂，其至少部分地覆盖晶片，漏极引线，栅极引线和源极引线。

公开(公告)号：US20150102425A1

公开(公告)日：2015-04-16

申请号：US14052711

申请日：2013-10-12

申请人： Ming Sun ,  Kai Liu ,  Xiao Tian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

发明人： Ming Sun ,  Kai Liu ,  Xiao Tian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

IPC分类号： H01L23/495 ,  H01L29/78 ,  H01L29/66 ,  H01L23/00

CPC分类号： H01L23/49562 ,  H01L23/492 ,  H01L23/4928 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/97 ,  H01L29/66477 ,  H01L29/78 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/83895 ,  H01L2224/97 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2924/014

摘要： A power device package for containing, protecting and providing electrical contacts for a power transistor includes a top and bottom lead frames for directly no-bump attaching to the power transistor. The power transistor is attached to the bottom lead frame as a flip-chip with a source contact and a gate contact directly no-bumping attaching to the bottom lead frame. The power transistor has a bottom drain contact attaching to the top lead frame. The top lead frame further includes an extension for providing a bottom drain electrode substantially on a same side with the bottom lead frame. In a preferred embodiment, the power device package further includes a joint layer between device metal of source, gate or drain and top or bottom lead frame, through applying ultrasonic energy.

摘要翻译： 用于容纳，保护和提供用于功率晶体管的电触头的功率器件封装包括用于直接不连接到功率晶体管的顶部和底部引线框架。 功率晶体管作为具有源极接触的倒装芯片附接到底部引线框架，并且栅极接触件直接地不连接到底部引线框架上。 功率晶体管具有附接到顶部引线框架的底部漏极接触。 顶部引线框架还包括用于提供与底部引线框架基本上在同一侧上的底部漏极电极的延伸部分。 在优选实施例中，功率器件封装还包括通过施加超声波能量的源极，栅极或漏极以及顶部或底部引线框架的器件金属之间的接合层。