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    Enhancement of persistent currents in high TC superconductors
    1.
    发明授权
    Enhancement of persistent currents in high TC superconductors 失效
    在高TC超导体中增强持续电流

    公开(公告)号：US5912210A

    公开(公告)日：1999-06-15

    申请号：US907435

    申请日：1997-08-08

    申请人： Lia Krusin-Elbaum ,  Alan David Marwick ,  Paul William Lisowski ,  James Russell Thompson, Jr. ,  James Francis Ziegler

    发明人： Lia Krusin-Elbaum ,  Alan David Marwick ,  Paul William Lisowski ,  James Russell Thompson, Jr. ,  James Francis Ziegler

    IPC分类号： C01G1/00 ,  H01B13/00 ,  H01L39/24 ,  H01L39/12

    CPC分类号： H01L39/249 ,  H01L39/2483

    摘要： There is disclosed herein an invention for increasing the current carrying capability of high-Tc superconductor materials. The inventive method includes irradiating such superconductors with light particles, such as neutrons, protons and thermal neutrons, having energy sufficient to cause fission of one or more elements in the superconductor material at a dose rate and for a time sufficient to create highly splayed (dispersed in orientation) extended columns of damaged material therein. These splayed tracks significantly enhance the pinning of magnetic vortices thereby effectively reducing the vortex creep at high temperatures resulting in increased current carrying capability.

    摘要翻译： 这里公开了用于增加高Tc超导体材料的载流能力的发明。 本发明的方法包括用诸如中子，质子和热中子的光粒子照射这种超导体，其具有足够的能量以在剂量速率下引起超导体材料中的一种或多种元素的裂变，并且足以产生高度展开的（分散的 在方向上）延伸的受损材料列。 这些显示的轨迹显着增强了磁旋涡的钉扎，从而有效地降低了高温下的涡流蠕变，从而提高了载流能力。

    Three-terminal cascade switch for controlling static power consumption in integrated circuits
    2.
    发明授权
    Three-terminal cascade switch for controlling static power consumption in integrated circuits 有权
    用于控制集成电路静态功耗的三端子级联开关

    公开(公告)号：US08466444B2

    公开(公告)日：2013-06-18

    申请号：US13406096

    申请日：2012-02-27

    申请人： Lia Krusin-Elbaum ,  Dennis M. Newns ,  Matthew R. Wordeman

    发明人： Lia Krusin-Elbaum ,  Dennis M. Newns ,  Matthew R. Wordeman

    IPC分类号： H01L47/00

    CPC分类号： H01L45/1226 ,  H01L27/24 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148

    摘要： A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance state and a higher resistance state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration.

    摘要翻译： 开关电路包括连接在电压供给端子和逻辑子块之间的多个三端子PCM开关装置。 每个开关装置包括设置在第一端子和第二端子之间接触的PCM，加热装置，其设置成接触在第二端子和第三端子之间，加热装置位于PCM附近，并且被配置为切换 PCM的可变形部分在较低电阻状态和较高电阻状态之间; 以及绝缘层，其被配置为将加热器与所述PCM材料电隔离，并且所述加热器与所述第一端子电隔离。 第一个PCM开关器件的第三端子耦合到一个置位/复位开关，其余的PCM开关器件的第三个端子以级联配置耦合到一个相邻的PCM开关器件的第二个端子。

    COUPLING PIEZOELECTRIC MATERIAL GENERATED STRESSES TO DEVICES FORMED IN INTEGRATED CIRCUITS
    3.
    发明申请
    COUPLING PIEZOELECTRIC MATERIAL GENERATED STRESSES TO DEVICES FORMED IN INTEGRATED CIRCUITS 有权
    联合压电材料生成的应力到集成电路中形成的器件

    公开(公告)号：US20120270353A1

    公开(公告)日：2012-10-25

    申请号：US13532991

    申请日：2012-06-26

    申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns ,  Kuan-Neng Chen

    发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns ,  Kuan-Neng Chen

    IPC分类号： H01L21/02

    CPC分类号： H01L49/00 ,  H01C10/103

    摘要： A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.

    摘要翻译： 用于将压电材料产生的应力耦合到集成电路的致动装置的耦合结构包括围绕压电（PE）材料形成的刚性加强结构和致动装置，该致动装置包括具有电阻的压阻（PR）材料 取决于施加的压力; 以及围绕PE材料和PR材料形成的软缓冲结构，缓冲结构设置在PE和PR材料之间以及加强件结构之间，其中加强件结构将PE和PR材料夹持到基底上，PE和PR材料 并且其中软缓冲结构允许PE材料相对于PR材料自由移动，从而将由施加的电压产生的应力耦合到PE材料到PR材料，从而改变PR材料的电阻。

    Programmable via structure and method of fabricating same
    5.
    发明授权
    Programmable via structure and method of fabricating same 有权
    可编程通孔结构及其制造方法

    公开(公告)号：US07888164B2

    公开(公告)日：2011-02-15

    申请号：US12538120

    申请日：2009-08-08

    申请人： Kuan-Neng Chen ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Albert M. Young

    发明人： Kuan-Neng Chen ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Albert M. Young

    IPC分类号： H01L21/02

    CPC分类号： H01L45/122 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

    摘要： A method of fabricating a programmable via structure is provided. The method includes providing a patterned heating material on a surface of an oxide layer. The oxide layer is located above a semiconductor substrate. A patterned dielectric material is formed having a least one via on a surface of the patterned heating material. The at least one via is filled with a phase change material such that a lower surface of the phase change material is in direct contact with a portion of the patterned heating material. A patterned diffusion barrier is formed on an exposed surface of the at least one via filled with the phase change material. A method of programmable a programmable via structure made by the method is also disclosed.

    摘要翻译： 提供一种制造可编程通孔结构的方法。 该方法包括在氧化物层的表面上提供图案化的加热材料。 氧化物层位于半导体衬底之上。 在图案化加热材料的表面上形成具有至少一个通孔的图案化电介质材料。 至少一个通孔填充有相变材料，使得相变材料的下表面与图案化加热材料的一部分直接接触。 图案化的扩散阻挡层形成在填充有相变材料的至少一个通孔的暴露表面上。 还公开了一种通过该方法制成的可编程通孔结构的方法。

    THREE-TERMINAL CASCADE SWITCH FOR CONTROLLING STATIC POWER CONSUMPTION IN INTEGRATED CIRCUITS
    6.
    发明申请
    THREE-TERMINAL CASCADE SWITCH FOR CONTROLLING STATIC POWER CONSUMPTION IN INTEGRATED CIRCUITS 有权
    用于控制集成电路中静态功耗的三端子开关

    公开(公告)号：US20090321710A1

    公开(公告)日：2009-12-31

    申请号：US12551643

    申请日：2009-09-01

    申请人： Lia Krusin-Elbaum ,  Dennis M. Newns ,  Matthew R. Wordeman

    发明人： Lia Krusin-Elbaum ,  Dennis M. Newns ,  Matthew R. Wordeman

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1226 ,  H01L27/24 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148

    摘要： A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance state and a higher resistance state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration.

    摘要翻译： 开关电路包括连接在电压供给端子和逻辑子块之间的多个三端子PCM开关装置。 每个开关装置包括设置在第一端子和第二端子之间接触的PCM，加热装置，其设置成接触在第二端子和第三端子之间，加热装置位于PCM附近，并且被配置为切换 PCM的可变形部分在较低电阻状态和较高电阻状态之间; 以及绝缘层，其被配置为将加热器与所述PCM材料电隔离，并且所述加热器与所述第一端子电隔离。 第一个PCM开关器件的第三个端子耦合到一个设置/复位开关，其余的PCM开关器件的第三个端子以级联配置耦合到相邻PCM开关器件的第二个端子。

    Compound with room temperature electrical resistivity comparable to that of elemental copper
    10.
    发明授权
    Compound with room temperature electrical resistivity comparable to that of elemental copper 失效
    具有与元素铜相当的室温电阻率的化合物

    公开(公告)号：US5288456A

    公开(公告)日：1994-02-22

    申请号：US021146

    申请日：1993-02-23

    申请人： Mohamed O. Aboelfotoh ,  Michael J. Brady ,  Lia Krusin-Elbaum

    发明人： Mohamed O. Aboelfotoh ,  Michael J. Brady ,  Lia Krusin-Elbaum

    IPC分类号： C22C1/00 ,  C22C9/00 ,  C23C14/06

    CPC分类号： C22C9/00 ,  H01L23/53233 ,  H01L2924/0002

    摘要： The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu.sub.3 Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.

    摘要翻译： 本发明涉及在室温下表现出非常低的电阻率的新型化合物。 更具体地，已经发现，将至少1至15原子％的镓和/或至少1至15原子％的金掺入化学计量的锗化锗（Cu 3 Ge）化合物中导致与元素铜相当的室温电阻率， 但在高温下暴露于空气或氧气时具有优异的化学和电子稳定性。 此外，本发明的化合物没有与铜扩散到元素和化合物半导体中的任何问题，这常常导致半导体器件特性的劣化。 另外，本发明涉及一种制备上述前述新颖化合物的方法。