利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

52 条记录 (耗时 0.021 秒)

    METHOD FOR DEPOSITING GROUP III/V COMPOUNDS
    2.
    发明申请
    METHOD FOR DEPOSITING GROUP III/V COMPOUNDS 审中-公开
    沉积III / V族化合物的方法

    公开(公告)号：US20090149008A1

    公开(公告)日：2009-06-11

    申请号：US12244440

    申请日：2008-10-02

    申请人： Olga Kryliouk ,  Sandeep Nijhawan ,  Yuriy Melnik ,  Lori D. Washington ,  Jacob W. Grayson ,  Sung W. Jun ,  Jie Su

    发明人： Olga Kryliouk ,  Sandeep Nijhawan ,  Yuriy Melnik ,  Lori D. Washington ,  Jacob W. Grayson ,  Sung W. Jun ,  Jie Su

    IPC分类号： H01L21/20

    CPC分类号： C30B25/02 ,  C23C16/303 ,  C23C16/4488 ,  C23C16/45578 ,  C30B29/403

    摘要： Embodiments of the invention generally relate to methods for forming Group III-V materials by a hydride vapor phase epitaxy (HVPE) process. In one embodiment, a method for forming a gallium nitride material on a substrate within a processing chamber is provided which includes heating a metallic source to form a heated metallic source, wherein the heated metallic source contains gallium, aluminum, indium, alloys thereof, or combinations thereof, exposing the heated metallic source to chlorine gas while forming a metallic chloride gas, exposing the substrate to the metallic chloride gas and a nitrogen precursor gas while forming a metal nitride layer on the substrate during the HVPE process. The method further provides exposing the substrate to chlorine gas during a pretreatment process prior to forming the metal nitride layer. In one example, the exhaust conduit of the processing chamber is heated to about 200° C. or less during the pretreatment process.

    摘要翻译： 本发明的实施方案一般涉及通过氢化物气相外延（HVPE）方法形成III-V族材料的方法。 在一个实施例中，提供了一种用于在处理室内的衬底上形成氮化镓材料的方法，其包括加热金属源以形成加热的金属源，其中加热的金属源包含镓，铝，铟，其合金或 其组合，同时形成金属氯化物气体，将加热的金属源暴露于氯气中，在HVPE工艺期间在衬底上形成金属氮化物层，同时将衬底暴露于金属氯化物气体和氮气前体气体。 该方法还在形成金属氮化物层之前在预处理工艺期间将衬底暴露于氯气。 在一个实例中，处理室的排气管道在预处理过程中被加热到约200℃或更低。

    METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN
    7.
    发明申请
    METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN 审中-公开
    现场室清洁后过程室去除的方法

    公开(公告)号：US20110117728A1

    公开(公告)日：2011-05-19

    申请号：US12868899

    申请日：2010-08-26

    申请人： Jie Su ,  Lori D. Washington ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Jacob Grayson ,  Sang Won Kang ,  Dong Hyung Lee ,  Hua Chung

    发明人： Jie Su ,  Lori D. Washington ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Jacob Grayson ,  Sang Won Kang ,  Dong Hyung Lee ,  Hua Chung

    IPC分类号： H01L21/20 ,  B08B9/00

    CPC分类号： C23C16/4405 ,  C23C16/4404 ,  C23C16/45574 ,  H01L21/67115

    摘要： A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

    摘要翻译： 一种用于从处理室的内表面去除沉积产物并用于防止或减缓这种沉积产物的生长的方法和装置。 将含卤素气体提供到室以蚀刻掉沉积产物。 将卤素清除气体提供到室以除去任何残留的卤素。 卤素清除气体通常通过暴露于电磁能（通过热能在处理室内）或通过电场，UV或微波在远程室中而被激活。 可以将沉积前体添加到卤素清除气体中，以在室的内表面上形成耐沉积膜。 另外，或者也可以通过在PVD工艺中将耐沉积金属溅射到处理室的内部部件上来形成耐沉积膜。

    DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING
    10.
    发明申请
    DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING 审中-公开
    在现场清洁后使用NH3净化的MOCVD室的去除

    公开(公告)号：US20100273291A1

    公开(公告)日：2010-10-28

    申请号：US12731030

    申请日：2010-03-24

    申请人： Olga Kryliouk ,  Jie Su ,  Kevin Griffin ,  Sung Won Jun ,  Sandeep Nijwahan ,  Xizi Dong ,  Tze Poon ,  Lori D. Washington ,  Jacob Grayson

    发明人： Olga Kryliouk ,  Jie Su ,  Kevin Griffin ,  Sung Won Jun ,  Sandeep Nijwahan ,  Xizi Dong ,  Tze Poon ,  Lori D. Washington ,  Jacob Grayson

    IPC分类号： H01L51/40

    CPC分类号： C23C16/303 ,  C23C16/4405 ,  C23C16/45563 ,  C23C16/45574 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： Embodiments of the present invention generally relate to methods and apparatus for removing unwanted deposition build-up from one more interior surfaces of a substrate processing chamber after a substrate is processed in a chamber to form, for example, Group III-V materials by metal-organic chemical vapor deposition (MOCVD) deposition processes and/or hydride vapor phase epitaxial (HVPE) deposition processes. In one embodiment, a method for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber is provided. The method comprises depositing one or more Group III containing layers over a substrate disposed in the substrate processing chamber, transferring the substrate out of the substrate processing chamber, and pulsing a halogen containing gas into the substrate processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces of the substrate processing chamber.

    摘要翻译： 本发明的实施方案一般涉及用于在衬底在腔室中处理以形成例如III-V族材料之后，从衬底处理室的多个内表面去除不想要的沉积积累的方法和装置， 有机化学气相沉积（MOCVD）沉积工艺和/或氢化物气相外延（HVPE）沉积工艺。 在一个实施例中，提供了从衬底处理室的一个或多个内表面去除不想要的沉积积聚的方法。 该方法包括在设置在衬底处理室中的衬底上沉积一个或多个含III族的层，将衬底转移到衬底处理室之外，并将含卤素的气体脉冲到衬底处理室中以去除至少一部分 从衬底处理室的一个或多个内表面积聚不需要的沉积物。