摘要:
Advanced interconnect technologies such as Through Silicon Vias (TSVs) have become an integral part of 3-D integration. Methods and systems and provided for laser-based acoustic techniques in which a short laser pulse generates broadband acoustic waves that propagate in the TSV structure. An optical interferometer detects the surface displacement caused by the acoustic waves reflecting within the structure as well as other acoustic waves traveling near the surface that has information about the structure dimensions and irregularities, such as voids. Features of voids, such as their location, are also identified based on the characteristics of the acoustic wave as it propagates through the via. Measurements typically take few seconds per site and can be easily adopted for in-line process monitoring.
摘要:
An automatically adjustable method for use in opto-acoustic metrology or other types of metrology operations is described. The method includes modifying the operation of a metrology system that uses a PSD style sensor arrangement. The method may be used to quickly adjust the operation of a metrology system to ensure that the data obtained therefrom are of the desired quality. Further, the method is useful in searching for and optimizing data that is or can be correlated to substrate or sample features or characteristics that of interest. Apparatus and computer readable media are also described.
摘要:
An automatically adjustable method for use in opto-acoustic metrology or other types of metrology operations is described. The method includes modifying the operation of a metrology system that uses a PSD style sensor arrangement. The method may be used to quickly adjust the operation of a metrology system to ensure that the data obtained therefrom are of the desired quality. Further, the method is useful in searching for and optimizing data that is or can be correlated to substrate or sample features or characteristics that of interest. Apparatus and computer readable media are also described.
摘要:
A method includes accessing a structure model defining a cross-sectional profile of a structure on a sample. The cross-sectional profile is at least partially defined using a set of blocks. Each of the blocks includes a number of vertices. One or more of the vertices are expressed using one or more algebraic relationships between a number of parameters corresponding to the structure. Information is evaluated from the structure model to produce expected metrology data for a scatterometry-based optical metrology. The expected metrology data is suitable for use for determining one or more of the number of parameters corresponding to the structure. Apparatus are also disclosed.
摘要:
An optical metrology system is provided with a data analysis method to determine the elastic moduli of optically transparent dielectric films such as silicon dioxide, other carbon doped oxides over metal or semiconductor substrates. An index of refraction is measured by an ellipsometer and a wavelength of a laser beam is measured using a laser spectrometer. The angle of refraction is determined by directing a light pulse focused onto a wafer surface, measuring a first set of x1, y1, and z1 coordinates, moving the wafer in the z direction, directing the light pulse onto the wafer surface and measuring a second set of x2, y2 and z2 coordinates, using the coordinates to calculate an angle of incidence, calculating an angle of refraction from the calculated angle of incidence, obtaining a sound velocity v, from the calculated angle of refraction and using the determined sound velocity v, to calculate a bulk modulus. Hardware calibration and adjustments for the optical metrology system are also provided in order to minimize the variation of the results from tool to tool down to about 0.5% or below.
摘要:
A system comprising a means for generating an optical pump beam pulse and for directing the optical pump beam pulse to a first area of a surface of a sample having a plurality of film layers to generate an acoustic signal, a means for generating an x-ray probe pulse and for directing the x-ray probe pulse to a second area of the surface, a means for detecting an intensity of a diffracted x-ray probe pulse the intensity varying in response to the acoustic signal to form a probe pulse response signal, and a means for calculating an expected transient response to a theoretical acoustic signal propagated through a model of the sample and fitting the probe pulse response to the transient response to derive at least one characteristic of the sample.
摘要:
An optical metrology system is provided with a data analysis method to determine the elastic moduli of optically transparent dielectric films such as silicon dioxide, other carbon doped oxides over metal or semiconductor substrates. An index of refraction is measured by an ellipsometer and a wavelength of a laser beam is measured using a laser spectrometer. The angle of refraction is determined by directing a light pulse focused onto a wafer surface, measuring a first set of x1, y1, and z1 coordinates, moving the wafer in the z direction, directing the light pulse onto the wafer surface and measuring a second set of x2, y2 and z2 coordinates, using the coordinates to calculate an angle of incidence, calculating an angle of refraction from the calculated angle of incidence, obtaining a sound velocity v, from the calculated angle of refraction and using the determined sound velocity v, to calculate a bulk modulus. Hardware calibration and adjustments for the optical metrology system are also provided in order to minimize the variation of the results from tool to tool down to about 0.5% or below.