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16 条记录 (耗时 0.043 秒)

    Method For Manufacturing Reflective Optical Element, Reflective Optical Elements, Euv-Lithography Apparatus And Methods For Operating Optical Elements And Euv-Lithography Apparatus, Methods For Determining The Phase Shift, Methods For Determining The Layer Thickness, And Apparatuses For Carrying Out The Methods
    6.
    发明申请
    Method For Manufacturing Reflective Optical Element, Reflective Optical Elements, Euv-Lithography Apparatus And Methods For Operating Optical Elements And Euv-Lithography Apparatus, Methods For Determining The Phase Shift, Methods For Determining The Layer Thickness, And Apparatuses For Carrying Out The Methods 审中-公开
    制造反射光学元件的方法，反射光学元件，Euv光刻设备以及用于操作光学元件和Euv光刻设备的方法，用于确定相移的方法，用于确定层厚度的方法以及用于执行方法的设备

    公开(公告)号：US20070285643A1

    公开(公告)日：2007-12-13

    申请号：US10598481

    申请日：2005-03-04

    申请人： Marco Wedowski ,  Nadyeh Shariloo ,  Frank Scholze ,  Johannes Tuemmler

    发明人： Marco Wedowski ,  Nadyeh Shariloo ,  Frank Scholze ,  Johannes Tuemmler

    IPC分类号： G03B27/54 ,  G01B9/00

    CPC分类号： G01B11/0625 ,  G03F7/70958

    摘要： The invention relates to a method for manufacturing of a multilayer system (25) with a cap layer system (30), in particular for a reflective optical element for the extreme ultraviolet up to the soft x-ray wavelength range, comprising the steps of: 1. preparing a coating design for the multilayer system (25) with cap layer system (30); 2. coating a substrate (20) with the multilayer system (25) with cap layer system (30); 3. spatially resolved measurement of the coated substrate in terms of reflectance and photoelectron current in at least one surface point; 4. comparison of the measured data with data modelled for different thicknesses of the layers (31, 32, 33) of the cap layer system (30) and/or the layers (21, 22, 23, 24) of the multilayer system (25) for determining of the thickness distribution obtained by the coating; 5. if necessary, adjusting of the coating parameters and repeating steps 2 to 5 until the coated thickness distribution coincides with the design. The invention also relates to further manufacturing methods, reflective optical elements, EUV-lithography apparatuses, and methods for operating optical elements and EUV-lithography apparatuses as well as methods for determining the phase shift, methods for determining the layer thickness, and apparatuses for carrying out the methods.

    摘要翻译： 本发明涉及一种用于制造具有盖层系统（30）的多层系统（25）的方法，特别是用于直到软x射线波长范围的极紫外线的反射光学元件，包括以下步骤： 1.制备具有盖层系统（30）的多层系统（25）的涂层设计; 用盖层系统（30）用多层系统（25）涂覆基底（20）; 3.在至少一个表面点的反射率和光电子电流方面，对涂覆的基底进行空间分辨测量; 4.测量数据与盖层系统（30）的层（31,32,33）和/或多层系统的层（21,22,23,24）的不同厚度建模的数据的比较（ 25），用于确定由涂层获得的厚度分布; 5.如果需要，调整涂层参数并重复步骤2至5，直到涂层厚度分布与设计一致。 本发明还涉及进一步的制造方法，反射光学元件，EUV光刻设备以及用于操作光学元件和EUV光刻设备的方法以及用于确定相移的方法，用于确定层厚度的方法以及用于承载的设备 出来的方法。

    Device, euv-lithographic device and method for preventing and cleaning contamination on optical elements
    10.
    发明申请
    Device, euv-lithographic device and method for preventing and cleaning contamination on optical elements 失效
    装置，光刻设备和防止和清洁光学元件污染的方法

    公开(公告)号：US20050104015A1

    公开(公告)日：2005-05-19

    申请号：US10506555

    申请日：2003-03-07

    申请人： Marco Wedowski ,  Frank Stietz ,  Bas Mertens ,  Roman Klein

    发明人： Marco Wedowski ,  Frank Stietz ,  Bas Mertens ,  Roman Klein

    IPC分类号： G21K1/06 ,  B08B7/00 ,  G03F7/20 ,  G21K5/00 ,  H01L21/027 ,  G01J1/00

    CPC分类号： G03F7/70925 ,  B08B7/0035 ,  G03F7/70916

    摘要： The invention relates to a method for preventing contamination on the surfaces of optical elements comprising a multi-layer system, during the exposure thereof to radiation at signal wave lengths in an evacuated closed system comprising a residual gas atmosphere, whereby the photocurrent generated by means of photo emission from the radiated surface of the multi-layer system is measured. The photocurrent is used to regulate the gas composition of the residual gas. The gas composition is altered according to at least one lower and one upper threshold value of the photocurrent. The invention also relates to a device for regulating the contamination on the surface of at least one optical element during exposure and an EUV-lithographic device and a method for cleaning the surfaces of the optical elements contaminated by carbon.

    摘要翻译： 本发明涉及一种防止在包括多层系统的光学元件的表面上的污染的方法，该方法在其包括残留气体气氛的抽真空封闭系统中以信号波长的辐射曝光期间，由此产生的光电流通过 测量来自多层系统的辐射表面的光发射。 光电流用于调节残留气体的气体成分。 气体组成根据光电流的至少一个下限和上限阈值而改变。 本发明还涉及一种用于在曝光期间调节至少一个光学元件的表面上的污染的装置以及用于清洁被碳污染的光学元件的表面的EUV-光刻设备和方法。