Low “K” factor hybrid photoresist
    4.
    发明授权
    Low “K” factor hybrid photoresist 失效
    低“K”因子混合光刻胶

    公开(公告)号:US06440635B1

    公开(公告)日:2002-08-27

    申请号:US09675608

    申请日:2000-09-29

    IPC分类号: G03F7039

    摘要: A photoresist having both positive and negative tone components resulting in a lower “k” factor than the single tone photoresist is disclosed. The hybrid resist may either have the negative tone resist or the positive tone resist as the major portion, while the other tone is a relatively minor portion. For examples, a positive tone resist may include a minor portion of a negative tone cross-linker or a negative tone resist may include positively acting functional groups. The hybrid resist of the present invention allows for wider exposure dosage windows, therefore increasing the yield or performance and line density.

    摘要翻译: 公开了具有比单色光致抗蚀剂低的“k”因子的具有正和负色调分量的光致抗蚀剂。 混合抗蚀剂可以具有负色调抗蚀剂或正色调抗蚀剂作为主要部分,而另一种色调是相对较小的部分。 例如,正色调抗蚀剂可以包括负色调交联剂的较小部分或负色调抗蚀剂可以包括正性官能团。 本发明的混合抗蚀剂允许更宽的曝光剂量窗口,从而提高产量或性能和线密度。

    Method of producing an integrated circuit chip using low “k” factor hybrid photoresist and apparatus formed thereby
    5.
    发明授权
    Method of producing an integrated circuit chip using low “k” factor hybrid photoresist and apparatus formed thereby 失效
    使用低“k”因子混合光致抗蚀剂生产集成电路芯片的方法和由此形成的装置

    公开(公告)号:US06284439B1

    公开(公告)日:2001-09-04

    申请号:US09107956

    申请日:1998-06-30

    IPC分类号: G03F730

    摘要: A photoresist having both positive and negative tone components resulting in a lower “k” factor than the single tone photoresist is disclosed. The hybrid resist may either have the negative tone resist or the positive tone resist as the major portion, while the other tone is a relatively minor portion. For examples, a positive tone resist may include a minor portion of a negative tone cross-linker or a negative tone resist may include positively acting functional groups. The hybrid resist of the present invention allows for wider exposure dosage windows, therefore increasing the yield or performance and line is density.

    摘要翻译: 公开了具有比单色光致抗蚀剂低的“k”因子的具有正和负色调分量的光致抗蚀剂。 混合抗蚀剂可以具有负色调抗蚀剂或正色调抗蚀剂作为主要部分,而另一种色调是相对较小的部分。 例如,正色调抗蚀剂可以包括负色调交联剂的较小部分或负色调抗蚀剂可以包括正性官能团。 本发明的混合抗蚀剂允许更宽的曝光剂量窗口,因此增加产量或性能,线是密度。

    Low “K” factor hybrid photoresist
    6.
    发明授权
    Low “K” factor hybrid photoresist 失效
    低“K”因子混合光刻胶

    公开(公告)号:US06190829B1

    公开(公告)日:2001-02-20

    申请号:US08715288

    申请日:1996-09-16

    IPC分类号: G03F7004

    摘要: A photoresist having both positive and negative tone components resulting in a lower “k” factor than the single tone photoresist is disclosed. The hybrid resist may either have the negative tone resist or the positive tone resist as the major portion, while the other tone is a relatively minor portion. For examples, a positive tone resist may include a minor portion of a negative tone cross-linker or a negative tone resist may include positively acting functional groups. The hybrid resist of the present invention allows for wider exposure dosage windows, therefore increasing the yield or performance and line density.

    摘要翻译: 公开了具有比单色光致抗蚀剂低的“k”因子的具有正和负色调分量的光致抗蚀剂。 混合抗蚀剂可以具有负色调抗蚀剂或正色调抗蚀剂作为主要部分,而另一种色调是相对较小的部分。 例如,正色调抗蚀剂可以包括负色调交联剂的较小部分或负色调抗蚀剂可以包括正性官能团。 本发明的混合抗蚀剂允许更宽的曝光剂量窗口,从而提高产量或性能和线密度。