公开(公告)号：US08487440B2

公开(公告)日：2013-07-16

申请号：US12833755

申请日：2010-07-09

申请人： Mark Harrison ,  Evelyn Napetschnig ,  Franz Stueckler

发明人： Mark Harrison ,  Evelyn Napetschnig ,  Franz Stueckler

IPC分类号： H01L23/482 ,  H01L21/30 ,  H01L21/768

CPC分类号： H01L21/3065 ,  H01L21/02057 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L2221/68327 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05005 ,  H01L2224/05083 ,  H01L2224/05099 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05172 ,  H01L2224/05184 ,  H01L2224/05541 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/047 ,  H01L2924/00

摘要： A semiconductor device includes a workpiece having a bottom surface opposite the top surface. Metallization layers are disposed over the top surface and a protective layer is disposed over the metallization layers. The semiconductor device further includes a metal silicide layer disposed on the bottom surface. The metal silicide layer is less than about five atomic layers in thickness. A first metal layer is disposed over the metal silicide layer such that a metal of the first metal layer is the same as a metal of the metal silicide layer.

摘要翻译： 半导体器件包括具有与顶表面相对的底表面的工件。 金属化层设置在顶表面上方，并且保护层设置在金属化层上。 半导体器件还包括设置在底表面上的金属硅化物层。 金属硅化物层的厚度小于约5个原子层。 第一金属层设置在金属硅化物层上方，使得第一金属层的金属与金属硅化物层的金属相同。

公开(公告)号：US20120007244A1

公开(公告)日：2012-01-12

申请号：US12833755

申请日：2010-07-09

申请人： Mark Harrison ,  Evelyn Napetschnig ,  Franz Stueckler

发明人： Mark Harrison ,  Evelyn Napetschnig ,  Franz Stueckler

IPC分类号： H01L23/482 ,  H01L21/30 ,  H01L21/768

CPC分类号： H01L21/3065 ,  H01L21/02057 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L2221/68327 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05005 ,  H01L2224/05083 ,  H01L2224/05099 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05172 ,  H01L2224/05184 ,  H01L2224/05541 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/047 ,  H01L2924/00

摘要： A semiconductor device includes a workpiece having a bottom surface opposite the top surface. Metallization layers are disposed over the top surface and a protective layer is disposed over the metallization layers. The semiconductor device further includes a metal silicide layer disposed on the bottom surface. The metal silicide layer is less than about five atomic layers in thickness. A first metal layer is disposed over the metal silicide layer such that a metal of the first metal layer is the same as a metal of the metal silicide layer.

摘要翻译： 半导体器件包括具有与顶表面相对的底表面的工件。 金属化层设置在顶表面上方，并且保护层设置在金属化层上。 半导体器件还包括设置在底表面上的金属硅化物层。 金属硅化物层的厚度小于约5个原子层。 第一金属层设置在金属硅化物层上方，使得第一金属层的金属与金属硅化物层的金属相同。

公开(公告)号：US20120068345A1

公开(公告)日：2012-03-22

申请号：US12883362

申请日：2010-09-16

申请人： Tobias Schmidt ,  Evelyn Napetschnig ,  Franz Stueckler ,  Anton Pugatschow

发明人： Tobias Schmidt ,  Evelyn Napetschnig ,  Franz Stueckler ,  Anton Pugatschow

IPC分类号： H01L23/522

CPC分类号： H01L24/32 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/83 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/0516 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05179 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/29082 ,  H01L2224/32227 ,  H01L2224/83805 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/10335 ,  H01L2924/10337 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/00

摘要： In various embodiments, a layer stack is provided. The layer stack may include a carrier; a first metal disposed over the carrier; a second metal disposed over the first metal; and a solder material disposed above the second metal or a material that provides contact to a solder that is supplied by an external source. The second metal may have a melting temperature of at least 1800° C. and is not or substantially not dissolved in the solder material at least one of during a soldering process and after the soldering process.

摘要翻译： 在各种实施例中，提供层叠。 层叠可以包括载体; 设置在载体上的第一金属; 设置在所述第一金属上的第二金属; 以及设置在第二金属上方的焊料材料或提供与由外部源供应的焊料的接触的材料。 第二金属可以具有至少1800℃的熔融温度，并且在焊接工艺期间和焊接工艺之后至少一个焊料材料中不会或基本上不溶解。

公开(公告)号：US10186458B2

公开(公告)日：2019-01-22

申请号：US13542655

申请日：2012-07-05

申请人： Karl Mayer ,  Evelyn Napetschnig ,  Michael Pinczolits ,  Michael Sternad ,  Michael Roesner

发明人： Karl Mayer ,  Evelyn Napetschnig ,  Michael Pinczolits ,  Michael Sternad ,  Michael Roesner

IPC分类号： H01L21/78 ,  H01L21/50 ,  H01L21/56 ,  H01L23/48 ,  H01L23/00 ,  H01L23/31

摘要： A system and method for manufacturing a packaged component are disclosed. An embodiment comprises forming a plurality of components on a carrier, the plurality of components being separated from each other by kerf regions on a front side of the carrier and forming a metal pattern on a backside of the carrier, wherein the metal pattern covers the backside of the carrier except over regions corresponding to the kerf regions. The method further comprises generating the component by separating the carrier.

公开(公告)号：US09735126B2

公开(公告)日：2017-08-15

申请号：US13154523

申请日：2011-06-07

申请人： Manfred Mengel ,  Alexander Heinrich ,  Steffen Orso ,  Thomas Behrens ,  Oliver Eichinger ,  Lim Fong ,  Evelyn Napetschnig ,  Edmund Riedl

发明人： Manfred Mengel ,  Alexander Heinrich ,  Steffen Orso ,  Thomas Behrens ,  Oliver Eichinger ,  Lim Fong ,  Evelyn Napetschnig ,  Edmund Riedl

IPC分类号： H01L23/495 ,  H01L23/00 ,  B23K35/30 ,  B23K35/26 ,  B23K35/28 ,  C22C13/00 ,  C22C18/00 ,  C22C18/04 ,  C22C30/04 ,  C22C30/06 ,  H01L23/488 ,  B23K1/00

CPC分类号： H01L24/48 ,  B23K1/0016 ,  B23K35/262 ,  B23K35/282 ,  B23K35/3013 ,  C22C13/00 ,  C22C18/00 ,  C22C18/04 ,  C22C30/04 ,  C22C30/06 ,  H01L23/488 ,  H01L23/49513 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/05599 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45099 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/85455 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/207

摘要： A solder alloy is providing, the solder alloy including zinc, aluminum, magnesium and gallium, wherein the aluminum constitutes by weight 8% to 20% of the alloy, the magnesium constitutes by weight 0.5% to 20% of the alloy and the gallium constitutes by weight 0.5% to 20% of the alloy, the rest of the alloy including zinc.

公开(公告)号：US20140008805A1

公开(公告)日：2014-01-09

申请号：US13542655

申请日：2012-07-05

申请人： Karl Mayer ,  Evelyn Napetschnig ,  Michael Pinczolits ,  Michael Sternad ,  Michael Roesner

发明人： Karl Mayer ,  Evelyn Napetschnig ,  Michael Pinczolits ,  Michael Sternad ,  Michael Roesner

IPC分类号： H01L21/78 ,  H01L21/50 ,  H01L23/48 ,  H01L21/56

CPC分类号： H01L21/78 ,  H01L23/3121 ,  H01L24/29 ,  H01L24/32 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/29101 ,  H01L2224/29147 ,  H01L2224/32245 ,  H01L2224/40247 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/85399 ,  H01L2224/37099 ,  H01L2924/00

摘要： A system and method for manufacturing a packaged component are disclosed. An embodiment comprises forming a plurality of components on a carrier, the plurality of components being separated from each other by kerf regions on a front side of the carrier and forming a metal pattern on a backside of the carrier, wherein the metal pattern covers the backside of the carrier except over regions corresponding to the kerf regions. The method further comprises generating the component by separating the carrier.

摘要翻译： 公开了一种用于制造封装元件的系统和方法。 一个实施例包括在载体上形成多个部件，多个部件通过载体前侧上的切口区域彼此分开，并在载体的背面形成金属图案，其中金属图案覆盖背面 除了对应于切口区域的区域之外。 该方法还包括通过分离载体来产生组件。