摘要:
The present invention addresses the problem of providing a soybean-derived raw material-containing food or beverage that improves problems with flavor and physical properties, such as the grassy smell caused by soybean raw materials, and markedly improves product quality, in a soybean-derived raw material-containing food or beverage using conventional soybean raw materials such soymilk or tofu. Provided are a milk-substitute composition, and an egg-yolk substitute composition, etc., characterized by including a soybean emulsion composition having a protein content relative to dry material of at least 25 wt %, a fat content (as a chloroform/methanol mixed solvent extract) relative to the protein content of at least 100 wt %, and an LCI value of at least 55%. Also provided are a variety of soybean-derived raw material-containing food and beverages using these compositions.
摘要:
The present invention addresses the problem of providing a soybean-derived raw material-containing food or beverage that improves problems with flavor and physical properties, such as the grassy smell caused by soybean raw materials, and markedly improves product quality, in a soybean-derived raw material-containing food or beverage using conventional soybean raw materials such soymilk or tofu. Provided are a milk-substitute composition, and an egg-yolk substitute composition, etc., characterized by including a soybean emulsion composition having a protein content relative to dry material of at least 25 wt %, a fat content (as a chloroform/methanol mixed solvent extract) relative to the protein content of at least 100 wt %, and an LCI value of at least 55%. Also provided are a variety of soybean-derived raw material-containing food and beverages using these compositions.
摘要:
Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or C1-5 alkoxymethyl groups; and a solvent (C), wherein an organic hard mask layer obtained from the composition for forming an organic hard mask layer is used at the lowest layer in a lithography process using a multi-layer film, wherein R1 to R4 have the same definition as ones in the specification.
摘要:
A material forms a pattern by applying a photosensitive composition to a base material and drying to form a photosensitive coating and performing exposure and development, and a method for forming the pattern. A photosensitive composition includes water-soluble organic particles, and a solvent, wherein the solvent is a poor solvent for the water-soluble organic particles. Preferably, the water-soluble organic particles of the photosensitive composition includes a polymer which contains a unit structure (A) for forming organic particles, a unit structure (B) for forming interparticle crosslinkage, and a unit structure (C) for imparting dispersibility, and the photosensitive composition further includes a photoacid generator. In addition, the water-soluble organic particles of the photosensitive composition includes a polymer which contains the unit structure (A) for forming organic particles, the unit structure (B) for forming interparticle crosslinkage, the unit structure (C) for imparting dispersibility, and a unit structure (D) having a photoacid generating group.
摘要:
There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): [where R1s are independently a methyl group or an ethyl group; Xs are independently a C1-10 linking group; and Zs are independently a C1-10 alkyl group or a phenyl group optionally having a substituent, where X optionally contains at least one oxygen atom or sulfur atom in the main chain thereof, and when Z is an alkyl group, at least one hydrogen atom of the alkyl group is optionally substituted with a fluorine atom] and an organic solvent.
摘要:
Provided is a method for easily producing a lamellar compressed fiber structural material which has mechanical characteristics close to those of in vivo bone and which is capable of easily increasing osteoblast even when a difference in strength exists. In order to solve the issues, the method for producing compressed fiber structural material 1, includes: a step of preparing biocompatible fiber 14 having an average diameter of 5 μm-50 μm and an aspect ratio of 20-500; and a step of molding compressed fiber structural material 1 by cold pressing/shearing biocompatible fiber 14, compressed fiber structural material 1 having an average pore diameter that is in the range of 60 μm-100 μm inclusive and a void fraction that is in the range of 25%-50% inclusive, both obtained by measurement in accordance with the mercury penetration method. Further, it is preferable for the cold pressing/shearing is performed by controlling a compressive pressure in the range of 200 MPa-2000 MPa, a shearing stroke length in the range of 0.2 mm-5 mm and a shearing velocity in the range of 0.5 mm/min-5 mm/min.
摘要翻译:本发明提供一种容易制造层状压缩纤维结构材料的方法,其具有接近体内骨的机械特性,并且即使存在强度差也能够容易地增加成骨细胞。 为了解决这些问题,制造压缩纤维结构材料1的方法包括:制备平均直径为5μm〜50μm,长径比为20-500的生物相容性纤维14的工序; 以及通过冷压/剪切生物相容性纤维14成型压缩纤维结构材料1的步骤,平均孔径在60μm-100μm范围内的压缩纤维结构材料1和在该范围内的空隙率 为25%-50%,均为根据汞渗透法测量得到的。 此外,优选通过将压缩压力控制在200MPa〜2000MPa,剪切行程长度在0.2mm-5mm范围内,剪切速度在0.5的范围内进行冷压/剪切 mm / min-5mm / min。
摘要:
There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): [where R1s are independently a methyl group or an ethyl group; Xs are independently a C1-10 linking group; and Zs are independently a C1-10 alkyl group or a phenyl group optionally having a substituent, where X optionally contains at least one oxygen atom or sulfur atom in the main chain thereof, and when Z is an alkyl group, at least one hydrogen atom of the alkyl group is optionally substituted with a fluorine atom] and an organic solvent.
摘要:
A resist underlayer film forming composition used in a lithography process includes: a polymer (A) containing a unit structure having a hydroxy group, a unit structure having a carboxy group, or combination thereof; a crosslinkable compound (B) having at least two vinyl ether groups; a photoacid generator (C); a C4-20 fluoroalkylcarboxylic acid or a salt of the fluoroalkylcarboxylic acid (D); and a solvent (E). The polymer (A) includes a unit structure selected from unit structures of Formula (1), Formula (2), and Formula (3);
摘要:
Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or C1-5 alkoxymethyl groups; and a solvent (C), wherein an organic hard mask layer obtained from the composition for forming an organic hard mask layer is used at the lowest layer in a lithography process using a multi-layer film, wherein R1 to R4 have the same definition as ones in the specification.
摘要:
There is provided a novel organic silicon compound that can be used for a silane coupling agent. An organic silicon compound of Formula (1): (where A− is Formula (2) or Formula (3): E is Formula (4) or Formula (5): R1 and R2 are each independently a C1-5 alkyl group, R3 is a hydrogen atom or a methyl group, R4 and R5 are each independently a C1-5 alkyl group, m, n, and p are each independently an integer of 1 to 5, and q is an integer of 1 to 3).