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公开(公告)号：US07267724B2
公开(公告)日：2007-09-11
申请号：US09862458
申请日：2001-05-23
申请人： Masahiko Tanaka , Manabu Ikemoto , Naoaki Yokogawa
发明人： Masahiko Tanaka , Manabu Ikemoto , Naoaki Yokogawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45574 , C23C16/452 , C23C16/45565 , H01J37/32623
摘要： A dividing plate for a thin-film deposition apparatus divides the interior of the vacuum reaction chamber into a plasma discharge space and a film deposition process space, by fixing or connecting a plurality of laminated plates together by securely bonding them over the entire area of their interfacial surfaces, or a large portion thereof.
摘要翻译： 用于薄膜沉积设备的分隔板将真空反应室的内部分成等离子体放电空间和薄膜沉积处理空间，通过将它们固定或连接在一起，将它们固定或连接在一起，将它们牢固地粘合在它们的整个区域上 界面或其大部分。
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公开(公告)号：US20080017500A1
公开(公告)日：2008-01-24
申请号：US11834717
申请日：2007-08-07
申请人： Masahiko Tanaka , Manabu Ikemoto , Naoaki Yokogawa
发明人： Masahiko Tanaka , Manabu Ikemoto , Naoaki Yokogawa
CPC分类号： C23C16/45574 , C23C16/452 , C23C16/45565 , H01J37/32623
摘要： A dividing plate for a thin-film deposition apparatus divides the interior of the vacuum reaction chamber into a plasma discharge space and a film deposition process space, by fixing or connecting a plurality of laminated plates together by securely bonding them over the entire area of their interfacial surfaces, or a large portion thereof.
摘要翻译： 用于薄膜沉积设备的分隔板将真空反应室的内部分成等离子体放电空间和薄膜沉积处理空间，通过将它们固定或连接在一起，将它们固定或连接在一起，将它们牢固地粘合在它们的整个区域上 界面或其大部分。
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公开(公告)号：US07981216B2
公开(公告)日：2011-07-19
申请号：US10907023
申请日：2005-03-16
IPC分类号： C23C16/505
CPC分类号： C23C16/45574 , C23C16/452 , C23C16/45565
摘要： A vacuum processing apparatus, including a reactor and a partitioning plate having a plurality of through-holes through which radicals are allowed to pass and separating the reactor into a plasma generating space and a substrate process space, the process, such as a film deposition process, being carried out on a substrate placed in the substrate process space by delivering a gas into the plasma generating space for generating a plasma, producing radicals with the plasma thus generated, and delivering the radicals through the plurality of through-holes on the partitioning plate into the substrate process space. The partitioning plate includes a partitioning body having a plurality of through-holes and a control plate disposed on the plasma generating space side of the partitioning body and having radical passage holes in the positions corresponding to the plurality of through-holes on the partitioning plate.
摘要翻译： 一种真空处理装置，包括反应器和具有多个通孔的分隔板，通过该通孔使自由基通过所述通孔并将反应器分离成等离子体产生空间和基板处理空间，所述方法如成膜方法 通过将气体输送到等离子体产生空间中以产生等离子体，在由此产生的等离子体产生自由基的同时在放置在基板处理空间中的基板上进行，并且通过分隔板上的多个通孔输送自由基 进入基板工艺空间。 分隔板包括具有多个通孔的分隔体和设置在分隔体的等离子体产生空间侧的控制板，并且在与分隔板上的多个通孔对应的位置具有自由通过孔。
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公开(公告)号：US20050217576A1
公开(公告)日：2005-10-06
申请号：US10907023
申请日：2005-03-16
IPC分类号： C23C16/505 , C23C16/44 , C23C16/452 , C23C16/455 , H01J37/32 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/452 , C23C16/45565
摘要： A vacuum processing apparatus, including a reactor and a partitioning plate having a plurality of through-holes through which radicals are allowed to pass and separating the reactor into a plasma generating space and a substrate process space, the process, such as a film deposition process, being carried out on a substrate placed in the substrate process space by delivering a gas into the plasma generating space for generating a plasma, producing radicals with the plasma thus generated, and delivering the radicals through the plurality of through-holes on the partitioning plate into the substrate process space. The partitioning plate includes a partitioning body having a plurality of through-holes and a control plate disposed on the plasma generating space side of the partitioning body and having radical passage holes in the positions corresponding to the plurality of through-holes on the partitioning plate.
摘要翻译： 一种真空处理装置，包括反应器和具有多个通孔的分隔板，通过该通孔使自由基通过所述通孔并将反应器分离成等离子体产生空间和基板处理空间，所述方法如成膜方法 通过将气体输送到等离子体产生空间中以产生等离子体，在由此产生的等离子体产生自由基的同时在放置在基板处理空间中的基板上进行，并且通过分隔板上的多个通孔输送自由基 进入基板工艺空间。 分隔板包括具有多个通孔的分隔体和设置在分隔体的等离子体产生空间侧的控制板，并且在与分隔板上的多个通孔对应的位置具有自由通过孔。
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公开(公告)号：US20100221895A1
公开(公告)日：2010-09-02
申请号：US12764242
申请日：2010-04-21
申请人： Takuya Seino , Manabu Ikemoto , Kimiko Mashimo
发明人： Takuya Seino , Manabu Ikemoto , Kimiko Mashimo
IPC分类号： H01L21/36 , H01L21/465
CPC分类号： H01L21/02049 , H01J37/32091 , H01J37/3244 , H01L21/02381 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02658 , H01L21/28194 , H01L21/28202 , H01L21/67196 , H01L29/4916 , H01L29/495 , H01L29/4966 , H01L29/4975 , H01L29/517 , H01L29/66651
摘要： HF-originated radicals generated in a plasma-forming chamber are fed to a treatment chamber via feed holes, while HF gas molecules as the treatment gas are supplied to the treatment chamber from near the radical feed holes to suppress the excitation energy, thereby increasing the selectivity to Si to remove a native oxide film. Even with the dry-treatment, the surface treatment provides good surface flatness equivalent to that obtained by the wet-cleaning which requires high-temperature treatment, and further attains growth of Si single crystal film on the substrate after the surface treatment. The surface of formed Si single crystal film has small quantity of impurities of oxygen, carbon, and the like. After sputtering Hf and the like onto the surface of the grown Si single crystal film, oxidation and nitrification are applied thereto to form a dielectric insulation film such as HfO thereon, thus forming a metal electrode film. All through the above steps, the substrate is not exposed to atmospheric air, thereby suppressing the adsorption of impurities onto the interface, and thus obtaining a C-V curve with small hysteresis. As a result, good device characteristics are obtained in MOS-FET.
摘要翻译： 在等离子体形成室中产生的HF产生的自由基通过进料孔供给到处理室，而作为处理气体的HF气体分子从自由基进料孔附近供给到处理室，以抑制激发能，从而增加 Si的选择性去除天然氧化物膜。 即使进行干式处理，表面处理也能够提供与通过高温处理的湿式清洗相同的表面平坦度，进一步在表面处理后的基板上生长Si单晶膜。 形成的Si单晶膜的表面具有少量的氧，碳等的杂质。 在生长的Si单晶膜的表面上溅射Hf等之后，对其进行氧化和硝化以在其上形成诸如HfO的介电绝缘膜，从而形成金属电极膜。 通过上述步骤，基板不暴露于大气中，从而抑制杂质在界面上的吸附，从而获得滞后小的C-V曲线。 结果，在MOS-FET中获得良好的器件特性。
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6.发明授权
公开(公告)号：US5296444A
公开(公告)日：1994-03-22
申请号：US871325
申请日：1992-04-21
申请人： Atsuo Saiki , Hideki Suematsu , Manabu Ikemoto , Hitomi Kawabata
发明人： Atsuo Saiki , Hideki Suematsu , Manabu Ikemoto , Hitomi Kawabata
CPC分类号： B41M5/44 , B41M5/035 , B41M5/423 , Y10S428/913 , Y10S428/914 , Y10T428/31801
摘要： In a sublimation transfer method wherein a heat-meltable ink layer containing a sublimation dye is melt-transferred to give a master having an image of the ink, and the sublimation dye in the ink image is heat-transferred to form a dyed image on a substrate, there is used a heat-melt transfer medium wherein a release layer comprising a wax-like substance as a major component is provided between a foundation and the ink layer, or an adhesive layer comprising a wax-like substance as a major component is provided on the ink layer, or both the release layer and the adhesive layer are provided. The releasability of the ink layer from the foundation and the adhesiveness of the ink layers with each other are good. The method is especially useful to form a full-color dyed image.
摘要翻译： 在升华转印方法中，其中将含有升华染料的可热熔性油墨层熔融转印，得到具有油墨图像的母版，并将油墨图像中的升华染料热转印以形成染色图像 在基材和油墨层之间设置以蜡状物质为主要成分的脱模层，或以蜡状物质为主要成分的粘合剂层为热塑性转印介质， 设置在油墨层上，或者设置在剥离层和粘合剂层两者上。 油墨层从基础上的脱模性以及油墨层的粘附性良好。 该方法对于形成全色染色图像特别有用。
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公开(公告)号：US07807585B2
公开(公告)日：2010-10-05
申请号：US12611088
申请日：2009-11-02
申请人： Takuya Seino , Manabu Ikemoto , Hiroki Date
发明人： Takuya Seino , Manabu Ikemoto , Hiroki Date
CPC分类号： H01L21/28229 , C23C14/02 , C23C14/165 , C23C14/5853 , H01L21/02046 , H01L21/02049 , H01L21/31645 , H01L29/517 , Y10S438/906
摘要： A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiH4 or the like); sputtering Hf or the like; and then performing oxidation/nitridation. These steps are carried out without exposing the substrate to atmosphere, thereby making it possible to obtain a C-V curve with less hysteresis and realize a MOS-FET having favorable device characteristics.
摘要翻译： 通过以下步骤形成包括HfO等的介电绝缘膜：通过将衬底表面暴露于氟基来清洁半导体衬底的表面; 用氟基或氢化物（SiH 4等）进行氢终止处理; 溅射Hf等; 然后进行氧化/氮化。 这些步骤在不将基板暴露于大气的情况下进行，从而可以获得具有较小滞后的C-V曲线，并实现具有良好的器件特性的MOS-FET。
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8.发明授权
公开(公告)号：US5561098A
公开(公告)日：1996-10-01
申请号：US331287
申请日：1994-10-28
申请人： Manabu Ikemoto
发明人： Manabu Ikemoto
CPC分类号： B41M5/38257 , B41M5/345 , D06P5/003 , D06P5/004 , D06P5/008 , Y10S428/913 , Y10S428/914 , Y10T428/24876 , Y10T428/31786 , Y10T428/31801
摘要： A transfer printing method is provided which comprises the steps of: selectively melt-transferring at least one of heat-meltable ink layers Y, M and C containing heat-migrating dyes for respective colors onto a foundation to form an ink image on the foundation, selectively melt-transferring a heat-meltable layer T containing a readily dyeable heat-meltable resin onto the ink image, giving a master sheet, and placing the master sheet on an image receptor and heating the resulting assembly under pressure to form a dyed image on the image receptor. The transfer printing method gives a clear dyed image, especially a clear full-color dyed image, on any image receptor regardless of the kind thereof.
摘要翻译： 提供了一种转印方法，其包括以下步骤：将含有用于各种颜色的热迁移染料的可热熔油墨层Y，M和C中的至少一种选择性地熔融转移到基础上以在基础上形成油墨图像， 选择性地将含有容易染色的可热熔树脂的可热熔层T熔融转移到油墨图像上，得到母版，并将母片放置在图像接收器上，并在压力下加热所得组件以形成染色图像 图像受体。 转印印刷方法可以在任何图像受体上给出清晰的染色图像，特别是清晰的全色染色图像，而不管其类型如何。
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9.发明授权公开(公告)号：US08119018B2
公开(公告)日：2012-02-21
申请号：US12441098
申请日：2007-09-12
申请人： Manabu Ikemoto , Tomoaki Osada , Naoaki Yokokawa
发明人： Manabu Ikemoto , Tomoaki Osada , Naoaki Yokokawa
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461
CPC分类号： H01F41/308 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01L43/12
摘要： A magnetoresistive effect element manufacturing method includes a first step of preparing a magnetoresistive effect element including a magnetic film and a substrate, a second step of etching a predetermined region of the magnetic film by a reactive ion etching method, and a third step of exposing the magnetic film having undergone the second step to a plasma at an ion current density of 4×10−7 A/cm2 or less.
摘要翻译： 磁阻效应元件制造方法包括：制备包括磁性膜和基板的磁阻效应元件的第一步骤，通过反应离子蚀刻方法蚀刻磁性膜的预定区域的第二步骤;以及第三步骤， 已经经过第二步的磁性膜以离子电流密度为4×10-7A / cm 2或更低的等离子体。
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10.发明授权公开(公告)号：US07771701B2
公开(公告)日：2010-08-10
申请号：US11816726
申请日：2005-07-15
CPC分类号： C23C16/4404 , H01J37/32477 , H01J37/32871
摘要： In a hydrogen atom generation source in a vacuum treatment apparatus which can effectively inhibit hydrogen atoms from being recombined due to contact with an internal wall surface of a treatment chamber of the vacuum treatment apparatus and an internal wall surface of a transport passage, and being returned into hydrogen molecules, at least a part of a surface facing a space with the hydrogen atom generation source formed therein of a member surrounding the hydrogen atom generation source is coated with SiO2. In a hydrogen atom transportation method for transporting hydrogen atoms generated by the hydrogen atom generation source in the vacuum treatment apparatus to a desired place, the hydrogen atoms are transported via a transport passage whose internal wall surface is coated with SiO2.
摘要翻译： 在真空处理装置中的氢原子产生源中，能够有效地抑制氢原子与真空处理装置的处理室的内壁面的接触和输送通路的内壁面的复合，并被返回 形成氢分子，其中形成有围绕氢原子产生源的构件的氢原子产生源的面向空间的表面的至少一部分被涂覆有SiO 2。 在将真空处理装置中由氢原子产生源产生的氢原子转移到所需位置的氢原子输送方法中，氢原子通过内壁表面被SiO 2涂覆的输送通道输送。
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